公开(公告)号：WO2017040547A3

公开(公告)日：2017-04-27

申请号：PCT/US2016049529

申请日：2016-08-30

Applicant: STC UNM

Inventor： KRISHNA SANJAY ,  KLEIN BRIANNA ,  CAVALLO FRANCESCA ,  ZAMIRI SEYEDEH MARZIYEH

IPC: H01L21/20

CPC classification number: H01L21/02631 ,  H01L21/02398 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02664 ,  H01L21/6835 ,  H01L2221/6835 ,  H01L2221/68368

Abstract: A method for forming a semiconductor structure, includes: providing a host substrate; forming at least one sacrificial layer having two or more group-V species over the host substrate; forming at least one semiconductor layer over the at least one sacrificial layer; and transferring at least a portion of the at least one semiconductor layer from the host substrate onto an alternate substrate.

Abstract translation: 一种形成半导体结构的方法，包括：提供主基板; 在主衬底上形成具有两种或更多种V族物质的至少一个牺牲层; 在至少一个牺牲层上形成至少一个半导体层; 以及将所述至少一个半导体层的至少一部分从所述主衬底转移到替代衬底上。