公开(公告)号：WO2011050165A3

公开(公告)日：2011-08-18

申请号：PCT/US2010053553

申请日：2010-10-21

Applicant: STC UNM ,  LEE SEUNG-CHANG ,  KRISHNA SANJAY ,  BRUECK STEVEN

Inventor： LEE SEUNG-CHANG ,  KRISHNA SANJAY ,  BRUECK STEVEN

IPC: G01J5/28

CPC classification number: H01L31/035236 ,  B82Y20/00 ,  G01J5/0853 ,  G02B6/1226 ,  H01L27/1446 ,  H01L31/03046 ,  H01L31/1035 ,  Y02E10/544 ,  Y02P70/521

Abstract: A plasmonic detector is described which can resonantly enhance the performance of infrared detectors. More specifically, the disclosure is directed to enhancing the quantum efficiency of semiconductor infrared detectors by increasing coupling to the incident radiation field as a result of resonant coupling to surface plasma waves supported by the metal/semiconductor interface, without impacting the dark current of the device, resulting in an improved detectivity over the surface plasma wave spectral bandwidth.

Abstract translation: 描述了可以共振地增强红外检测器的性能的等离子体激元检测器。 更具体地，本公开涉及通过增加与入射辐射场的耦合来提高半导体红外检测器的量子效率，这是由于与由金属/半导体界面支撑的表面等离子体波的谐振耦合而不影响器件的暗电流 ，导致比表面等离子体波谱带宽更好的检测性。

公开(公告)号：WO2005038997A3

公开(公告)日：2006-01-12

申请号：PCT/US2004034152

申请日：2004-10-14

Applicant: STC UNM ,  KRISHNA SANJAY ,  DAVID JOHN P R ,  HAYAT MAJEED M

Inventor： KRISHNA SANJAY ,  DAVID JOHN P R ,  HAYAT MAJEED M

IPC: H01L29/06 ,  H01L31/0352 ,  H01L31/107 ,  H01S20060101 ,  H01L31/0304

CPC classification number: H01L31/1075 ,  B82Y10/00 ,  B82Y20/00 ,  H01L31/0352

Abstract: A photodetector (100) for use at wavelengths of 2 µm and longer has an intersubband absorption region (110) to provide absorption at wavelengths beyond 2 µm, integrated with an avalanche multiplier region (104) to provide low-noise gain. In one particular design, the intersubband absorption region (110) is a quantum-confined absorption region (e.g., based on quantum wells and/or quantum dots).

Abstract translation: 用于波长为2μm和更长的光检测器（100）具有跨带吸收区域（110），以在超过2μm的波长处提供吸收，与雪崩倍增器区域（104）集成以提供低噪声增益。 在一个特定设计中，子带间吸收区域（110）是量子限制吸收区域（例如，基于量子阱和/或量子点）。

公开(公告)号：WO2017040547A3

公开(公告)日：2017-04-27

申请号：PCT/US2016049529

申请日：2016-08-30

Applicant: STC UNM

Inventor： KRISHNA SANJAY ,  KLEIN BRIANNA ,  CAVALLO FRANCESCA ,  ZAMIRI SEYEDEH MARZIYEH

IPC: H01L21/20

CPC classification number: H01L21/02631 ,  H01L21/02398 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02664 ,  H01L21/6835 ,  H01L2221/6835 ,  H01L2221/68368

Abstract: A method for forming a semiconductor structure, includes: providing a host substrate; forming at least one sacrificial layer having two or more group-V species over the host substrate; forming at least one semiconductor layer over the at least one sacrificial layer; and transferring at least a portion of the at least one semiconductor layer from the host substrate onto an alternate substrate.

Abstract translation: 一种形成半导体结构的方法，包括：提供主基板; 在主衬底上形成具有两种或更多种V族物质的至少一个牺牲层; 在至少一个牺牲层上形成至少一个半导体层; 以及将所述至少一个半导体层的至少一部分从所述主衬底转移到替代衬底上。

公开(公告)号：WO2017023387A3

公开(公告)日：2017-03-30

申请号：PCT/US2016031301

申请日：2016-05-06

Applicant: STC UNM

Inventor： BRUECK STEVEN R J ,  KRISHNA SANJAY ,  DAPKUS P DANIEL

IPC: H01S5/18

CPC classification number: H01S5/1212 ,  G01N2021/1704 ,  G01N2021/394 ,  G01N2021/399 ,  H01S5/0085 ,  H01S5/021 ,  H01S5/02208 ,  H01S5/02248 ,  H01S5/041 ,  H01S5/042 ,  H01S5/34306 ,  H01S5/4087

Abstract: A tunable laser device includes a laser structure and a plurality of individually addressable, separated contact stripes disposed on the laser structure. The laser structure includes a substrate, an active portion disposed on the substrate, and a chirped distributed feedback (DFB) grating disposed on the active portion. The active portion includes at least top and bottom contact layers and a gain medium.

Abstract translation: 可调激光器件包括激光器结构和设置在激光器结构上的多个单独寻址的分开的接触条。 激光器结构包括衬底，设置在衬底上的有源部分和设置在有源部分上的啁啾分布反馈（DFB）光栅。 活性部分至少包括顶部和底部接触层和增益介质。

公开(公告)号：WO2005031806A3

公开(公告)日：2009-04-09

申请号：PCT/US2004031381

申请日：2004-09-23

Applicant: STC UNM ,  KRISHNA SANJAY ,  TYO SCOTT J ,  HAYAT MAJEED M ,  RAGHAVAN SUNIL ,  SAKOGLU UNAL

Inventor： KRISHNA SANJAY ,  TYO SCOTT J ,  HAYAT MAJEED M ,  RAGHAVAN SUNIL ,  SAKOGLU UNAL

IPC: H01L27/146 ,  G01J1/00 ,  G01J3/28 ,  G01J3/32 ,  G01J3/50 ,  H01J5/16 ,  H01J40/14 ,  H01L20060101 ,  H01L29/205 ,  H01L31/0304 ,  H01L31/09

CPC classification number: H01L27/14649 ,  B82Y10/00 ,  G01J3/2803 ,  G01J3/2823 ,  G01J3/32

Abstract: A semiconductor detector (100) has a tunable spectral response. These detectors (100) may be used with processing techniques that permit the creation of "synthetic" sensors that have spectral responses that are beyond the spectral responses attainable by the underlying detectors (100). For example, the processing techniques may permit continuous and independent tuning of both the center wavelength and the spectral resolution of the synthesized spectral response. Other processing techniques can also generate responses that are matched to specific target signatures.

Abstract translation: 半导体检测器（100）具有可调光谱响应。 这些检测器（100）可以与允许创建具有超出由下面的检测器（100）可获得的光谱响应的光谱响应的“合成”传感器的处理技术一起使用。 例如，处理技术可以允许中心波长和合成光谱响应的光谱分辨率的连续且独立的调谐。 其他处理技术也可以产生与特定目标签名匹配的响应。