TEMPERATURE GRADIENT ZONE MELTING PROCESS AND APPARATUS
    151.
    发明申请
    TEMPERATURE GRADIENT ZONE MELTING PROCESS AND APPARATUS 审中-公开
    温度梯度熔融工艺和设备

    公开(公告)号:WO1983003710A1

    公开(公告)日:1983-10-27

    申请号:PCT/US1983000478

    申请日:1983-04-06

    CPC classification number: H01L21/24 C30B13/02

    Abstract: A process for fabricating a semiconductor device by thermal gradient zone melting, whereby metal-rich droplets (24) such as aluminum migrate through a semiconductor wafer (14) such as silicon to create conductive paths (22). One surface of the wafer (14) is placed intimately adjacent a heating surface (42) to establish a high and uniform thermal gradient through the wafer (14). Heat in the wafer (14) is removed from the other wafer surface. The apparatus for practicing the process comprises a base (40), heating means (44) and heat sink (46) means. Heating means (40) comprises a platform (40) having a generally planar heating surface (42) adapted to receive the entire area of the one surface of at least one wafer (14). The heat sink means (46) is spaced away from the other wafer surface to form a space (48) therebetween, the space being adapted to receive a high heat conductive gas. The heat sink means (46) and the gas cooperatively remove the heat in the wafer (14) to enhance the establishment of the thermal gradient. One surface of the wafer may be provided with a buffer layer (70) thereon, which is placed directly on a heating surface (42). The buffer layer (70) terminates the migration of the droplets to prevent allowing of the droplets with the heating surface (42).

    Abstract translation: 一种用于通过热梯度区熔化制造半导体器件的方法,其中诸如铝的富金属液滴(24)穿过诸如硅的半导体晶片(14)迁移以产生导电路径(22)。 将晶片(14)的一个表面紧密地放置在加热表面(42)附近,以建立穿过晶片(14)的高均匀的热梯度。 将晶片(14)中的热量从另一个晶片表面移除。 用于实施该方法的装置包括基座(40),加热装置(44)和散热器(46)装置。 加热装置(40)包括具有适于接收至少一个晶片(14)的一个表面的整个区域的大致平面加热表面(42)的平台(40)。 散热装置(46)与另一个晶片表面间隔开,以在它们之间形成空间(48),该空间适于接收高导热气体。 散热装置(46)和气体协同地移除晶片(14)中的热量以增强热梯度的建立。 晶片的一个表面可以在其上设置有缓冲层(70),其直接放置在加热表面(42)上。 缓冲层(70)终止液滴的迁移,以防止允许具有加热表面(42)的液滴。

    SATELLITE RECEIVER COMPUTER ADAPTER CARD
    152.
    发明申请
    SATELLITE RECEIVER COMPUTER ADAPTER CARD 审中-公开
    卫星接收机计算机适配器卡

    公开(公告)号:WO1997026762A1

    公开(公告)日:1997-07-24

    申请号:PCT/US1996000061

    申请日:1996-01-16

    CPC classification number: H04N21/4143 H04B1/18 H04B7/18597 H04N5/4401 H04N7/20

    Abstract: A printed circuit board intended to be placed within a card slot of a personal computer (102) that allows the personal computer (102) to receive information directly from a satellite communication network. An adapter card (124) operates in slave mode to a CPU (120) of the personal computer (102). The CPU (120) receives demodulated signals from a demodulator (130) of the adapter card (124) via a bus interface (134) on the adapter card (124). The CPU (120) also receives status information for the demodulator (130) and a tuner (132) and controls the operations of the demodulator (130) and tuner (132) via the bus interface (134). A DC-DC converter (136) receives power from a power supply (126) for the adapter card circuitry. Moreover, the DC-DC converter (136) powers a low noise block (LNB 112) of an antenna (110) of the satellite communication network.

    Abstract translation: 旨在放置在允许个人计算机(102)直接从卫星通信网络接收信息的个人计算机(102)的卡槽内的印刷电路板。 适配卡(124)以从属模式操作到个人计算机(102)的CPU(120)。 CPU(120)经由适配器卡(124)上的总线接口(134)从适配器卡(124)的解调器(130)接收解调信号。 CPU(120)还接收解调器(130)和调谐器(132)的状态信息,并且经由总线接口(134)控制解调器(130)和调谐器(132)的操作。 DC-DC转换器(136)从用于适配器卡电路的电源(126)接收电力。 此外,DC-DC转换器(136)为卫星通信网络的天线(110)的低噪声块(LNB112)供电。

    ELASTOMERIC SWITCH FOR ELECTRONIC DEVICES
    153.
    发明申请
    ELASTOMERIC SWITCH FOR ELECTRONIC DEVICES 审中-公开
    电子设备用弹性开关

    公开(公告)号:WO1996005604A1

    公开(公告)日:1996-02-22

    申请号:PCT/US1995010130

    申请日:1995-08-08

    Abstract: There is provided an elastomeric switching device (10) for use with electrical circuits, such as those located on or connected to a printed circuit board (20). The elastomeric switching device comprises an elastomeric pad (40) constructed from a plurality of parallel strips of conductive material (42) sandwiched between layers of non-conductive or insulating material (44) together with a moveable conductive connector (50) which is aligned with the elastomeric pad. The elastomeric pad is predisposed in contact with the circuits or circuit traces (20, 22, 24) located on the printed circuit board. The moveable connector includes a moveable conductive contact (56) and a flexural diaphragm (52). The moveable conductive contact establishes electrical connections between the affected circuits via the conductive strips of the elastomeric pad. A housing maintains the proper alignment and orientation of the elastomeric pad and the moveable conductive contact relative to the circuits or circuit traces.

    Abstract translation: 提供了一种用于电路的弹性体开关装置(10),例如位于或连接到印刷电路板(20)上的电路。 弹性体开关装置包括弹性体垫(40),其由夹在非导电或绝缘材料层(44)之间的导电材料(42)的多个平行条带构成,以及可移动导电连接器(50),其与 弹性垫。 弹性体垫预先与位于印刷电路板上的电路或电路迹线(20,22,24)接触。 可移动连接器包括可移动导电接触件(56)和弯曲膜片(52)。 可移动导电触点通过弹性垫的导电条来建立受影响电路之间的电连接。 壳体保持弹性体垫片和可移动导电接触件相对于电路或电路迹线的正确对准和取向。

    METHOD OF FABRICATING A MICROELECTRONIC DEVICE USING AN ALTERNATE SUBSTRATE
    155.
    发明申请
    METHOD OF FABRICATING A MICROELECTRONIC DEVICE USING AN ALTERNATE SUBSTRATE 审中-公开
    使用替代基板制造微电子器件的方法

    公开(公告)号:WO1994017550A1

    公开(公告)日:1994-08-04

    申请号:PCT/US1994000372

    申请日:1994-01-10

    Abstract: A microelectronic device is fabricated on a first substrate (40), and transferred to a second substrate (58). The first substrate (40) has a silicon etchable layer (42), a silicon dioxide etch-stop layer (44) overlying the etchable layer (42), and a single-crystal wafer (46) overlying the etch-stop layer (44). A microelectronic circuit element (48) is formed in the wafer (46) of the first substrate (40). The wafer (46) of the first substrate (40) is attached to an aluminum oxide temporary substrate (52), and the etchable layer (42) of the first substrate (40) is etched away down to the etch-stop layer (44) to leave a primary device structure. The etch-stop layer (44) may optionally be processed to remove all or a part of the layer. An exposed surface (56) of the primary device structure is fixed to the second substrate (58), and the temporary substrate (52) is removed.

    Abstract translation: 微电子器件制造在第一衬底(40)上,并被转移到第二衬底(58)。 第一衬底(40)具有硅蚀刻层(42),覆盖在可刻蚀层(42)上的二氧化硅蚀刻停止层(44)和覆盖在蚀刻停止层(44)上的单晶晶片 )。 微电子电路元件(48)形成在第一衬底(40)的晶片(46)中。 第一衬底(40)的晶片(46)附着到氧化铝临时衬底(52)上,第一衬底(40)的可蚀刻层(42)被蚀刻掉到蚀刻停止层(44) )留下主设备结构。 可以可选地处理蚀刻停止层(44)以去除层的全部或一部分。 一次装置结构的暴露表面(56)被固定到第二基板(58)上,而临时基板(52)被移除。

    METHOD FOR FORMING DEEP CONDUCTIVE FEEDTHROUGHS AND AN INTERCONNECT LAYER THAT INCLUDES FEEDTHROUGHS FORMED IN ACCORDANCE WITH THE METHOD
    156.
    发明申请
    METHOD FOR FORMING DEEP CONDUCTIVE FEEDTHROUGHS AND AN INTERCONNECT LAYER THAT INCLUDES FEEDTHROUGHS FORMED IN ACCORDANCE WITH THE METHOD 审中-公开
    用于形成深层诱导性食物的方法和包括根据该方法形成的食物的互连层

    公开(公告)号:WO1994017548A1

    公开(公告)日:1994-08-04

    申请号:PCT/US1994000371

    申请日:1994-01-10

    Abstract: An interconnect layer (40) for interposing between two active circuit layers of a multi-chip module (50). The interconnect layer includes a layer of silicon (14) having first surface and second surfaces. A first layer of dielectric material (16) is disposed over the first surface and a second layer of dielectric material (12) disposed over the second surface. The interconnect layer includes at least one electrically conductive feedthrough (42) that is formed within an opening made through the layer of silicon. The opening has sidewalls (22) that are coated with a dielectric material (24) and an electrically conductive material for providing a topside contact (26). A second contact (28) is formed from the backside of the silicon layer after removing the substrate (10). In accordance with the invention, the sidewalls have a slope associated therewith such that an area of the opening is larger at the first surface of the silicon layer than at the second surface of the silicon layer, thereby improving the contact metal step coverage. The silicon layer is comprised of silicon and has a thickness in the range of approximately 10 micrometers to approximately 50 micrometers. The opening is etched through the silicon layer with KOH to provide an inwardly sloping sidewall profile having an angle that is approximately equal to 54.7 degrees.

    Abstract translation: 一种用于插入多芯片模块(50)的两个有源电路层之间的互连层(40)。 互连层包括具有第一表面和第二表面的硅层(14)。 电介质材料(16)的第一层设置在第一表面上方,第二层介电材料(12)设置在第二表面之上。 互连层包括形成在通过硅层制成的开口内的至少一个导电馈通(42)。 开口具有涂覆有电介质材料(24)的侧壁(22)和用于提供顶侧触点(26)的导电材料。 在去除衬底(10)之后,从硅层的背面形成第二接触(28)。 根据本发明,侧壁具有与其相关联的斜面,使得在硅层的第一表面处的开口面积大于在硅层的第二表面处的面积,从而改善接触金属台阶覆盖。 硅层由<100>硅组成,其厚度在约10微米至约50微米的范围内。 用KOH将开口蚀刻通过<100>硅层,以提供具有大致等于54.7度的角度的向内倾斜的侧壁轮廓。

    LIQUID CRYSTAL DISPLAY INCLUDING ELECTRODES AND DRIVER DEVICES INTEGRALLY FORMED IN MONOCHRYSTALLINE SEMICONDUCTOR LAYER AND METHOD OF FABRICATING THE DISPLAY
    157.
    发明申请
    LIQUID CRYSTAL DISPLAY INCLUDING ELECTRODES AND DRIVER DEVICES INTEGRALLY FORMED IN MONOCHRYSTALLINE SEMICONDUCTOR LAYER AND METHOD OF FABRICATING THE DISPLAY 审中-公开
    包括在单晶半导体层中整体形成的电极和驱动器件的液晶显示器和制造显示器的方法

    公开(公告)号:WO1994017439A1

    公开(公告)日:1994-08-04

    申请号:PCT/US1994000365

    申请日:1994-01-10

    Abstract: A silicon dioxide etch stop layer (30) is formed on an inner surface (28b) of a monocrystalline silicon layer (28), and a silicon carrier wafer (52) is bonded to the etch stop layer. The exposed inner surface (28a) of the monocrystalline layer (28) is uniformly thinned to approximately 4 micrometers. Front electrodes (20) in the form of heavily doped areas, and microelectronic transistor driver devices (42) for the electrodes (20) are integrally formed on the outer surface (28a) of the monocrystalline layer (28). A front plate (12) is bonded to the outer surface (28a) of the monocrystalline layer (28), and the carrier (52) is removed. The central portion of the etch stop layer (30) is removed from the inner surface (28b) of the monocrystalline layer (28), and the exposed central portion (28c) of the layer (28) is uniformly thinned to approximately 400 angstroms using plasma assisted chemical etching. A back plate (14) having a back electrode (16) formed thereon is adhered to the unetched peripheral portion (28d) of the inner surface (28b) of the monocrystalline layer (28) to define a sealed space (24) between the front and back electrodes (12, 14) which is filled with liquid crystal material (26).

    Abstract translation: 在单晶硅层(28)的内表面(28b)上形成二氧化硅蚀刻停止层(30),并且将硅载体晶片(52)接合到蚀刻停止层。 单晶层(28)的暴露的内表面(28a)均匀地变薄至约4微米。 重掺杂区域形式的前电极(20)和用于电极(20)的微电子晶体管驱动器件(42)一体形成在单晶层(28)的外表面(28a)上。 前板(12)结合到单晶层(28)的外表面(28a),并移除载体(52)。 从单晶层(28)的内表面(28b)去除蚀刻停止层(30)的中心部分,并且使用(28)的暴露的中心部分(28c)均匀地变薄至约400埃,使用 等离子辅助化学蚀刻。 在其上形成有背面电极(16)的背板(14)粘附到单晶层(28)的内表面(28b)的未蚀刻的周边部分(28d),以在前面 以及填充有液晶材料(26)的背面电极(12,14)。

    WAVEGUIDE HOLOGRAPHIC TELLTALE DISPLAY
    159.
    发明申请
    WAVEGUIDE HOLOGRAPHIC TELLTALE DISPLAY 审中-公开
    波形全息显示

    公开(公告)号:WO1994015239A1

    公开(公告)日:1994-07-07

    申请号:PCT/US1993012451

    申请日:1993-12-21

    Abstract: A waveguide holographic telltale display (50) for displaying images to a vehicle driver via the vehicle windshield. A light source (56) injects light into the base of a clear inner windshield singlet (52). A mirror hologram (62b) between the inner (52) and outer (54) singlets confines a majority of the injected light to the inner singlet (52). An image hologram between the windshield singlets (52, 54) diffracts light out to the vehicle driver. A halfwave plate (66) between the image hologram (62) and the inner singlet (52) reduces ghosting and allows the driver to view the images even through polarized sunglasses. IR light is blocked by a tinted outer singlet (54) or a holographic solar coating (64). The display (50) does not suffer from ambient turn from the sun, and the light source (56) is hidden away from the vehicle dash.

    Abstract translation: 一种用于经由车辆挡风玻璃将图像显示到车辆驾驶员的波导全息指示显示器(50)。 光源(56)将光注入透明的内部挡风玻璃单体(52)的基座中。 内部(52)和外部(54)单体之间的镜子全息图(62b)将大部分注入的光限制在内部单线态(52)上。 挡风玻璃单体(52,54)之间的图像全息图将光射出到车辆驾驶员。 图像全息图(62)和内单声道(52)之间的半波片(66)减少重影,并允许驾驶员甚至通过偏光太阳镜观看图像。 IR光被着色的外单线(54)或全息太阳能涂层(64)阻挡。 显示器(50)不会受到来自太阳的环境转动,并且光源(56)被隐藏以远离车辆划痕。

    MULTIPLE LAYER MICROWAVE INTEGRATED CIRCUIT MODULE CONNECTOR ASSEMBLY
    160.
    发明申请
    MULTIPLE LAYER MICROWAVE INTEGRATED CIRCUIT MODULE CONNECTOR ASSEMBLY 审中-公开
    多层微波集成电路模块连接器总成

    公开(公告)号:WO1994014213A2

    公开(公告)日:1994-06-23

    申请号:PCT/US1993011757

    申请日:1993-12-03

    Abstract: A connector assembly for interconnecting microwave integrated circuit modules where each module has at least one microwave interconnection pins and one DC power pin. A groundplane (28) supports the mounting surfaces (32) of the modules (10) and has a plurality of holes (38, 40) for receiving the interconnection pins (18) and the DC power pins (22) of the modules. A conducting layer (78) opposite the mounting surface of the groundplane receives microwave signals from the interconnection pins extending down through it and communicates these signals between different modules. Resilient bellows and stripline are used to ensure matched impedances and secure microwave connections. The DC power pins extend through the conducting layer and isolating groundplane (87) and a DC power grid board (88) where an electrical connection is made with each DC power pin. The DC power pins are held in place in the power grid board using spring sockets so that the modules are installed on the connector assembly simply by inserting the pins into the respective holes and removed simply by pulling the modules away from the connector assembly.

    Abstract translation: 用于互连微波集成电路模块的连接器组件,其中每个模块具有至少一个微波互连引脚和一个直流电源引脚。 接地平面(28)支撑模块(10)的安装表面(32)并且具有用于接收模块的互连引脚(18)和直流电源引脚(22)的多个孔(38,40)。 与接地平面的安装表面相对的导电层(78)从布线向下延伸的互连引脚的微波信号,并在不同模块之间传送这些信号。 弹性波纹管和带状线用于确保匹配的阻抗和安全的微波连接。 直流电源引脚延伸穿过导电层并隔离接地面(87)和直流电网(88),其中与每个直流电源引脚进行电连接。 直流电源引脚使用弹簧插座固定在电网板中,使得模块通过将引脚插入相应的孔中而简单地通过将模块拉离连接器组件来将其安装在连接器组件上。

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