Abstract:
A process for fabricating a semiconductor device by thermal gradient zone melting, whereby metal-rich droplets (24) such as aluminum migrate through a semiconductor wafer (14) such as silicon to create conductive paths (22). One surface of the wafer (14) is placed intimately adjacent a heating surface (42) to establish a high and uniform thermal gradient through the wafer (14). Heat in the wafer (14) is removed from the other wafer surface. The apparatus for practicing the process comprises a base (40), heating means (44) and heat sink (46) means. Heating means (40) comprises a platform (40) having a generally planar heating surface (42) adapted to receive the entire area of the one surface of at least one wafer (14). The heat sink means (46) is spaced away from the other wafer surface to form a space (48) therebetween, the space being adapted to receive a high heat conductive gas. The heat sink means (46) and the gas cooperatively remove the heat in the wafer (14) to enhance the establishment of the thermal gradient. One surface of the wafer may be provided with a buffer layer (70) thereon, which is placed directly on a heating surface (42). The buffer layer (70) terminates the migration of the droplets to prevent allowing of the droplets with the heating surface (42).
Abstract:
A printed circuit board intended to be placed within a card slot of a personal computer (102) that allows the personal computer (102) to receive information directly from a satellite communication network. An adapter card (124) operates in slave mode to a CPU (120) of the personal computer (102). The CPU (120) receives demodulated signals from a demodulator (130) of the adapter card (124) via a bus interface (134) on the adapter card (124). The CPU (120) also receives status information for the demodulator (130) and a tuner (132) and controls the operations of the demodulator (130) and tuner (132) via the bus interface (134). A DC-DC converter (136) receives power from a power supply (126) for the adapter card circuitry. Moreover, the DC-DC converter (136) powers a low noise block (LNB 112) of an antenna (110) of the satellite communication network.
Abstract:
There is provided an elastomeric switching device (10) for use with electrical circuits, such as those located on or connected to a printed circuit board (20). The elastomeric switching device comprises an elastomeric pad (40) constructed from a plurality of parallel strips of conductive material (42) sandwiched between layers of non-conductive or insulating material (44) together with a moveable conductive connector (50) which is aligned with the elastomeric pad. The elastomeric pad is predisposed in contact with the circuits or circuit traces (20, 22, 24) located on the printed circuit board. The moveable connector includes a moveable conductive contact (56) and a flexural diaphragm (52). The moveable conductive contact establishes electrical connections between the affected circuits via the conductive strips of the elastomeric pad. A housing maintains the proper alignment and orientation of the elastomeric pad and the moveable conductive contact relative to the circuits or circuit traces.
Abstract:
Two pieces (42, 46) are joined together by providing a gold bonding layer (44) overlying a nickel layer (40) on a first piece (42) to be bonded and providing a gold bonding layer (50) on a second piece (46) to be bonded. The gold layer (50) on the second piece (46) may optionally overlie a nickel layer (48) on the second piece (46). The gold layers (44, 50) are pressed together in a facing relation at a temperature of from about 125 DEG C to about 250 DEG C for a time sufficient to permit the layers (40, 44, 50, 46) to interdiffuse.
Abstract:
A microelectronic device is fabricated on a first substrate (40), and transferred to a second substrate (58). The first substrate (40) has a silicon etchable layer (42), a silicon dioxide etch-stop layer (44) overlying the etchable layer (42), and a single-crystal wafer (46) overlying the etch-stop layer (44). A microelectronic circuit element (48) is formed in the wafer (46) of the first substrate (40). The wafer (46) of the first substrate (40) is attached to an aluminum oxide temporary substrate (52), and the etchable layer (42) of the first substrate (40) is etched away down to the etch-stop layer (44) to leave a primary device structure. The etch-stop layer (44) may optionally be processed to remove all or a part of the layer. An exposed surface (56) of the primary device structure is fixed to the second substrate (58), and the temporary substrate (52) is removed.
Abstract:
An interconnect layer (40) for interposing between two active circuit layers of a multi-chip module (50). The interconnect layer includes a layer of silicon (14) having first surface and second surfaces. A first layer of dielectric material (16) is disposed over the first surface and a second layer of dielectric material (12) disposed over the second surface. The interconnect layer includes at least one electrically conductive feedthrough (42) that is formed within an opening made through the layer of silicon. The opening has sidewalls (22) that are coated with a dielectric material (24) and an electrically conductive material for providing a topside contact (26). A second contact (28) is formed from the backside of the silicon layer after removing the substrate (10). In accordance with the invention, the sidewalls have a slope associated therewith such that an area of the opening is larger at the first surface of the silicon layer than at the second surface of the silicon layer, thereby improving the contact metal step coverage. The silicon layer is comprised of silicon and has a thickness in the range of approximately 10 micrometers to approximately 50 micrometers. The opening is etched through the silicon layer with KOH to provide an inwardly sloping sidewall profile having an angle that is approximately equal to 54.7 degrees.
Abstract:
A silicon dioxide etch stop layer (30) is formed on an inner surface (28b) of a monocrystalline silicon layer (28), and a silicon carrier wafer (52) is bonded to the etch stop layer. The exposed inner surface (28a) of the monocrystalline layer (28) is uniformly thinned to approximately 4 micrometers. Front electrodes (20) in the form of heavily doped areas, and microelectronic transistor driver devices (42) for the electrodes (20) are integrally formed on the outer surface (28a) of the monocrystalline layer (28). A front plate (12) is bonded to the outer surface (28a) of the monocrystalline layer (28), and the carrier (52) is removed. The central portion of the etch stop layer (30) is removed from the inner surface (28b) of the monocrystalline layer (28), and the exposed central portion (28c) of the layer (28) is uniformly thinned to approximately 400 angstroms using plasma assisted chemical etching. A back plate (14) having a back electrode (16) formed thereon is adhered to the unetched peripheral portion (28d) of the inner surface (28b) of the monocrystalline layer (28) to define a sealed space (24) between the front and back electrodes (12, 14) which is filled with liquid crystal material (26).
Abstract:
Semiconductor with field effect transistors therein has a substantial metallic source bridge joining the adjacent FET sources. The source bridge is mounted against a heat extracting support to both support the FET and cool it.
Abstract:
A waveguide holographic telltale display (50) for displaying images to a vehicle driver via the vehicle windshield. A light source (56) injects light into the base of a clear inner windshield singlet (52). A mirror hologram (62b) between the inner (52) and outer (54) singlets confines a majority of the injected light to the inner singlet (52). An image hologram between the windshield singlets (52, 54) diffracts light out to the vehicle driver. A halfwave plate (66) between the image hologram (62) and the inner singlet (52) reduces ghosting and allows the driver to view the images even through polarized sunglasses. IR light is blocked by a tinted outer singlet (54) or a holographic solar coating (64). The display (50) does not suffer from ambient turn from the sun, and the light source (56) is hidden away from the vehicle dash.
Abstract:
A connector assembly for interconnecting microwave integrated circuit modules where each module has at least one microwave interconnection pins and one DC power pin. A groundplane (28) supports the mounting surfaces (32) of the modules (10) and has a plurality of holes (38, 40) for receiving the interconnection pins (18) and the DC power pins (22) of the modules. A conducting layer (78) opposite the mounting surface of the groundplane receives microwave signals from the interconnection pins extending down through it and communicates these signals between different modules. Resilient bellows and stripline are used to ensure matched impedances and secure microwave connections. The DC power pins extend through the conducting layer and isolating groundplane (87) and a DC power grid board (88) where an electrical connection is made with each DC power pin. The DC power pins are held in place in the power grid board using spring sockets so that the modules are installed on the connector assembly simply by inserting the pins into the respective holes and removed simply by pulling the modules away from the connector assembly.