公开(公告)号：WO2012104465A3

公开(公告)日：2012-12-27

申请号：PCT/ES2012070066

申请日：2012-02-01

Applicant: BAOLAB MICROSYSTEMS SL ,  MONTANYA SILVESTRE JOSEP

Inventor： MONTANYA SILVESTRE JOSEP

IPC: B81C1/00

CPC classification number: B81C1/00246 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81C2203/0714 ,  H01L28/40

Abstract: Systems and methods for manufacturing a chip comprising a plurality of MEMS devices arranged in an integrated circuit are provided. In one aspect, the systems and methods provide for a chip including electronic elements formed on a semiconductor material substrate. The chip further includes a stack of interconnection layers including layers of conductor material separated by layers of dielectric material. MEMS devices are formed within the stack of interconnection layers by applying gaseous HF to a first layer of dielectric material positioned highest in the stack of interconnection layers. The stack of interconnection layers includes at least one unetched layer of dielectric material, and at least one layer of conductor material for routing connections to and from the electronic elements.

Abstract translation: 提供了用于制造包括布置在集成电路中的多个MEMS器件的芯片的系统和方法。 在一个方面，所述系统和方法提供了包括形成在半导体材料基板上的电子元件的芯片。 该芯片还包括一叠互连层，包括由电介质材料层隔开的导体材料层。 通过将气态HF施加到位于互连层堆叠中最高位置的第一介电材料层，在互连层的堆叠内形成MEMS器件。 互连层的堆叠包括至少一个介电材料的未蚀刻层，以及至少一层用于将电缆连接到电子元件的导体材料层。

公开(公告)号：WO2011117716A9

公开(公告)日：2011-12-01

申请号：PCT/IB2011000617

申请日：2011-03-22

Applicant: SCANNANOTEK OY ,  PAVLOV ANDREI JURIEVICH ,  PAVLOVA YELENA VASILJEVNA

Inventor： PAVLOV ANDREI JURIEVICH ,  PAVLOVA YELENA VASILJEVNA

IPC: H01L31/04

CPC classification number: H01J45/00 ,  B81B7/02 ,  B81B2201/0271

Abstract: A microelectromechanical system (MEMS) solar cell device. The MEMS solar cell device includes a substrate, a sensing membrane exposed to light radiation being spaced from the substrate, a collector electrode disposed between the substrate and the sensing membrane, and a cavity defined between the sensing membrane and the collector electrode. The collector electrode collects charge carriers generated by light radiation on the sensing membrane within the cavity. A solar module or panel may be provided including a plurality of the cells arranged in an array on a substrate.

Abstract translation: 一种微机电系统（MEMS）太阳能电池装置。 MEMS太阳能电池器件包括衬底，暴露于与衬底间隔开的光辐射的感测膜，设置在衬底和感测膜之间的集电极，以及限定在感测膜和集电极之间的空腔。 集电极收集由腔内的感应膜上的光辐射产生的电荷载体。 可以提供太阳能模块或面板，其包括在基板上排列成阵列的多个单元。

公开(公告)号：WO2010039307A3

公开(公告)日：2010-06-17

申请号：PCT/US2009048835

申请日：2009-06-26

Applicant: UNIV CORNELL ,  US NAVY ,  PARPIA JEEVAK M ,  CRAIGHEAD HAROLD G ,  CROSS JOSHUA D ,  ILIC BOJAN ROBERT ,  ZALALUTDINOV MAXIM K ,  BALDWIN JEFFREY W ,  HOUSTON BRIAN H

Inventor： PARPIA JEEVAK M ,  CRAIGHEAD HAROLD G ,  CROSS JOSHUA D ,  ILIC BOJAN ROBERT ,  ZALALUTDINOV MAXIM K ,  BALDWIN JEFFREY W ,  HOUSTON BRIAN H

IPC: H03H3/007 ,  H03H3/00 ,  H03H9/02

CPC classification number: B81C1/00246 ,  B81B2201/0271 ,  Y10T29/49007

Abstract: The present invention is directed to a CMOS integrated micromechanical device fabricated in accordance with a standard CMOS foundry fabrication process. The standard CMOS foundry fabrication process is characterized by a predetermined layer map and a predetermined set of fabrication rules. The device includes a semiconductor substrate formed or provided in accordance with the predetermined layer map and the predetermined set of fabrication rules. A MEMS resonator device is fabricated in accordance with the predetermined layer map and the predetermined set of fabrication rules. The MEMS resonator device includes a micromechanical resonator structure having a surface area greater than or equal to approximately 20 square microns. At least one CMOS circuit is coupled to the MEMS resonator member. The at least one CMOS circuit is also fabricated in accordance with the predetermined layer map and the predetermined set of fabrication rules.

Abstract translation: 本发明涉及一种根据标准CMOS代工制造工艺制造的CMOS集成微机械器件。 标准CMOS代工厂制造过程的特征在于预定的层映射和预定的一组制造规则。 该器件包括根据预定层图和预定的一组制造规则形成或提供的半导体衬底。 根据预定的层图和预定的一组制造规则来制造MEMS谐振器装置。 MEMS谐振器装置包括具有大于或等于大约20平方微米的表面积的微机械谐振器结构。 至少一个CMOS电路被耦合到MEMS谐振器构件。 至少一个CMOS电路也是根据预定的层图和预定的制造规则制造的。

公开(公告)号：WO2009079188A1

公开(公告)日：2009-06-25

申请号：PCT/US2008084946

申请日：2008-11-26

Applicant: BOSCH GMBH ROBERT ,  LUTZ MARKUS ,  PAN ZHIYU ,  PARTRIDGE AARON

Inventor： LUTZ MARKUS ,  PAN ZHIYU ,  PARTRIDGE AARON

IPC: H03H3/007 ,  B81B3/00 ,  H03H9/02

CPC classification number: H03H9/02244 ,  B81B3/007 ,  B81B3/0072 ,  B81B2201/0271 ,  B81B2203/0109 ,  B81B2203/0163 ,  H03H3/0076 ,  H03H9/02338 ,  H03H2009/0233 ,  H03H2009/02496 ,  H03H2009/02503

Abstract: A microelectromechanical resonator may include one or more resonator masses that oscillates in a bulk mode and that includes a first plurality of regions each having a density, and a second plurality of regions each having a density, the density of each of the second plurality of regions differing from the density of each of the first plurality of regions. The second plurality of regions may be disposed in a non-uniform arrangement. The oscillation may include a first state in which the resonator mass is contracted, at least in part, in a first and/or a second direction, and expanded, at least in part, in a third and/or a fourth direction, the second direction being opposite the first direction, the fourth direction being opposite the third direction.

Abstract translation: 微机电谐振器可以包括以体模式振荡的一个或多个谐振器质量块，并且其包括每个具有密度的第一多个区域和每个具有密度的第二多个区域，第二多个区域中的每个第二多个区域的密度 不同于第一多个区域中的每一个的密度。 第二多个区域可以以非均匀布置的方式设置。 振荡可以包括其中谐振器质量至少部分地以第一和/或第二方向收缩并且至少部分地在第三和/或第四方向上膨胀的第一状态，第二状态 方向与第一方向相反，第四方向与第三方向相反。

公开(公告)号：WO2008061319A1

公开(公告)日：2008-05-29

申请号：PCT/AU2007/001807

申请日：2007-11-26

Applicant: MEMS-ID PTY LTD ,  ZMOOD, Ronald, Barry

Inventor： ZMOOD, Ronald, Barry

IPC: B81B7/04 ,  G01H11/06 ,  H03H3/007 ,  B81C1/00 ,  G01H13/00 ,  H03H9/24

CPC classification number: B81B3/0078 ,  B81B2201/0271 ,  H03H3/0076 ,  H03H9/2447

Abstract: A method of fabricating an array (110) of micromechanical resonant members (112), including the steps of: using MEMS techniques to form a set of resonant members at a common first resonant frequency; and using MEMS techniques to provide said resonant members with frequency trimming masses (220, 220', 320, 320'), said frequency trimming masses reducing said first resonant frequency of each resonant member by a different amount, such that said resonant members resonate at frequencies different to one another.

Abstract translation: 一种制造微机械谐振元件阵列（110）的方法，包括以下步骤：利用MEMS技术在共同的第一共振频率下形成一组谐振元件; 并且使用MEMS技术来为所述谐振元件提供频率修整质量（220,220'，320,320'），所述频率修整质量将每个谐振元件的所述第一谐振频率减小不同的量，使得所述谐振元件在 频率彼此不同。

公开(公告)号：WO2006101762A1

公开(公告)日：2006-09-28

申请号：PCT/US2006/008508

申请日：2006-03-09

Applicant: HONEYWELL INTERNATIONAL INC. ,  JAFRI, Ijaz, H. ,  MAGENDANZ, Galen, P. ,  KLEIN, Jonathan, L.

Inventor： JAFRI, Ijaz, H. ,  MAGENDANZ, Galen, P. ,  KLEIN, Jonathan, L.

IPC: H03H9/24 ,  H03H3/007 ,  B81B3/00 ,  B81C1/00

CPC classification number: B81C1/00142 ,  B81B2201/0271 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/051 ,  H03H3/0072 ,  H03H9/2447 ,  H03H9/462 ,  Y10T29/49005 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49826 ,  Y10T29/49861

Abstract: A method for fabrication of single crystal silicon micromechanical resonators using a two-wafer process, including either a Silicon-on-insulator (SOI) (104) or insulating base and resonator wafers (108) , wherein resonator anchors (122, 124) , a capacitive air gap (116) , isolation trenches (128, 130) , and alignment marks are micromachined in an active layer (114) of the base wafer; the active layer of the resonator wafer (124) is bonded directly to the active layer of the base wafer; the handle (144) and dielectric layers (140) of the resonator wafer are removed; viewing windows are opened in the active layer of the resonator wafer; masking the single crystal silicon semiconductor material active layer of the resonator wafer with photoresist material; a single crystal silicon resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist material is subsequently dry stripped.

Abstract translation: 一种使用双晶片工艺制造单晶硅微机械谐振器的方法，包括绝缘体上硅（SOI）（104）或绝缘基底和谐振晶片（108），其中谐振器锚（122,124）， 电容式气隙（116），隔离沟槽（128,130）和对准标记被微加工在基底晶片的有源层（114）中; 谐振器晶片（124）的有源层直接接合到基底晶片的有源层; 去除谐振器晶片的手柄（144）和电介质层（140）; 观察窗在谐振器晶片的有源层中打开; 用光致抗蚀剂材料掩蔽谐振晶片的单晶硅半导体材料有源层; 使用硅干蚀刻微加工技术在谐振器晶片的有源层中加工单晶硅谐振器; 随后将光致抗蚀剂材料干燥剥离。

公开(公告)号：WO2006001125A1

公开(公告)日：2006-01-05

申请号：PCT/JP2005/008426

申请日：2005-05-09

Applicant: 株式会社 村田製作所 ,  藤井 英俊 ,  竹内 雅樹

Inventor： 藤井 英俊 ,  竹内 雅樹

IPC: H03H9/02

CPC classification number: H03H9/105 ,  B81B2201/0271 ,  H03H3/02 ,  H03H9/02086 ,  H03H9/173

Abstract: 　シールド性を向上するとともに放熱性を高めることが可能な圧電フィルタを提供する。 　蓋２０と圧電デバイスチップ１２，１６，１７，１８とを重ね合わせて封止した圧電デバイス１０において、蓋２０の上面にのみ露出する第１の外部電極２２と、上面及び側面に露出する接地された第２の外部電極２３と、蓋２０と圧電デバイスチップ１２，１６，１７，１８との間に外縁に沿って全周に渡って配置され、蓋２０と圧電デバイスチップ１２，１６，１７，１８とを接合して封止し、かつ、接地された第２の外部電極２３に接合された、導電性接合材１５，３０とを備える。

Abstract translation: 提供一种能够提高散热性同时提高屏蔽性的压电装置。 一种压电装置（10），其中盖（20）和压电装置芯片（12,16,17,18）重叠和密封，包括仅暴露于盖的上表面的第一外部电极（22） 20），接触并暴露于上表面和侧表面的第二外部电极（23）和沿着盖（20）和压电装置之间的外边缘设置在整个周边的导电接合材料（15,30） 芯片（12,16,17,18），并连接和密封盖子（20）和压电元件芯片（12,16,17,18），并连接到接地的第二外部电极（23）。

公开(公告)号：WO2004095696A3

公开(公告)日：2005-07-07

申请号：PCT/US2004009881

申请日：2004-03-30

Applicant: BOSCH GMBH ROBERT ,  LUTZ MARKUS ,  PARTRIDGE AARON

Inventor： LUTZ MARKUS ,  PARTRIDGE AARON

IPC: H01P7/10 ,  H03H20060101 ,  H03H9/00 ,  H03H9/02 ,  H03H9/24 ,  H03H9/50 ,  H03H9/54

CPC classification number: H03H9/02448 ,  B81B3/0072 ,  B81B2201/0271 ,  B81B2203/0118 ,  H03H9/02259 ,  H03H9/02338 ,  H03H9/02417 ,  H03H9/2457 ,  H03H9/2463 ,  H03H2009/02496 ,  H03H2009/02511

Abstract: Thermally induced frequency variations in a micromechanical resonator are actively or passively mitigated by application of a compensating stiffness, or a compressive/tensile strain. Various composition materials may be selected according to their thermal expansion coefficient and used to form resonator components on a substrate. When exposed to temperature variations, the relative expansion of these composition materials creates a compensating stiffness, or a compressive/tensile strain.

Abstract translation: 通过施加补偿刚度或压缩/拉伸应变，微机械谐振器中的热诱导频率变化被主动地或被动地减轻。 可以根据其热膨胀系数选择各种组合物材料，并用于在基底上形成共振器部件。 当暴露于温度变化时，这些组合物材料的相对膨胀产生补偿刚度或压缩/拉伸应变。

公开(公告)号：WO2004095696A2

公开(公告)日：2004-11-04

申请号：PCT/US2004/009881

申请日：2004-03-30

Applicant: ROBERT BOSCH GMBH ,  LUTZ, Markus ,  PARTRIDGE, Aaron

Inventor： LUTZ, Markus ,  PARTRIDGE, Aaron

IPC: H03H

CPC classification number: H03H9/02448 ,  B81B3/0072 ,  B81B2201/0271 ,  B81B2203/0118 ,  H03H9/02259 ,  H03H9/02338 ,  H03H9/02417 ,  H03H9/2457 ,  H03H9/2463 ,  H03H2009/02496 ,  H03H2009/02511

Abstract: Thermally induced frequency variations in a micromechanical resonator are actively or passively mitigated by application of a compensating stiffness, or a compressive/tensile strain. Various composition materials may be selected according to their thermal expansion coefficient and used to form resonator components on a substrate. When exposed to temperature variations, the relative expansion of these composition materials creates a compensating stiffness, or a compressive/tensile strain.

公开(公告)号：WO2004095540A2

公开(公告)日：2004-11-04

申请号：PCT/US2004008808

申请日：2004-03-22

Applicant: BOSCH GMBH ROBERT ,  UNIV LELAND STANFORD JUNIOR

Inventor： PARTRIDGE AARON ,  LUTZ MARKUS ,  KENNY THOMAS

IPC: H01G5/16 ,  H01L20060101 ,  H01L21/00 ,  H01L21/20 ,  H01L27/14 ,  H01L29/82 ,  H01L29/84 ,  H01L

CPC classification number: B81C1/00063 ,  B81B2201/0271 ,  H01G5/16

Abstract: A method for fabricating a variable capacitive device including providing a base silicon-bearing compound electrode (107a-107c) which is vertically-inclined with respect to a substrate, depositing a sacrificial layer on the base electrode, depositing a silicon-bearing compound electrode (116a-117d) on the sacrificial layer which is also vertically-inclined with respect to the substrate, and removing the sacrificial layer from between the base silicon-bearing compound electrode (107a-107c) and the grown silicon-bearing compound electrode.(116a-116d) A variable capacitive device having a fixed vertically-inclined silicon-bearing compound electrode and a movable vertically-inclined silicon-bearing compound electrode produced by arranging a sacrificial layer on a base silicon-bearing compound electrode, depositing a grown silicon-bearing compound electrode on the sacrificial layer, and etching the sacrificial layer. Between the fixed silicon-bearing compound and the movable silicon-bearing compound electrode is a nanogap (120a-120d), the nanogap having a uniform width.