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公开(公告)号：KR1019920004776B1
公开(公告)日：1992-06-15
申请号：KR1019880017979
申请日：1988-12-30
Abstract: The accelarator is used for accelerating ion beam extracted from ion source to proper energy level in manufacturing semiconductor elements. The accelerator promotes to change clearance between electrodes in order to improves focusing effect of ion beam. The clearance is changed by inserting various thickness of rings or changing position of key groove for fixing electrode. Diameter of electrode is changed by providing inserting electrode at accerating electrode or attaching additional electrode to the electrode. Collimation focusing mode or cross focusing mode in ion optical system is optionally decided by changing diameter of accellerating electrode.
Abstract translation: 在制造半导体元件时，加速器用于将从离子源提取的离子束加速至适当的能级。 加速器促进改变电极之间的间隙，以改善离子束的聚焦效果。 通过插入各种厚度的环或改变固定电极的键槽的位置来改变间隙。 电极的直径通过在电极处设置插入电极或者将附加电极附接到电极来改变。 离子光学系统中的准直聚焦模式或交叉聚焦模式可选择通过改变加热电极的直径来决定。
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公开(公告)号：KR1019900000757B1
公开(公告)日：1990-02-15
申请号：KR1019870014273
申请日：1987-12-14
Applicant: 한국전자통신연구원
IPC: C23C14/24
Abstract: A gas supply system for chemical vapour deposition under low pressure is used for depositing W and WSi2 on Si and GaAs base in process of semiconductor material manufacturing and gives a precise and safe way for the growth of film. The system has advantages of precise gas flow control by locating hydraulic valve for gas supply time control before mass-flow controller; safety; and easy maintenance of mass- flow controller by installing N2 inlet line, by-pass line, exhaust line, valves and heating tape.
Abstract translation: 在低压下进行化学气相沉积的气体供给系统用于在半导体材料制造过程中在Si和GaAs基底上沉积W和WSi2，为薄膜的生长提供了一种精确而安全的方法。 该系统具有精确的气体流量控制，通过在质量流量控制器之前定位液压阀供气时间控制; 安全; 并通过安装N2入口管路，旁路管线，排气管路，阀门和加热带，方便维护质量流量控制器。
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