Abstract:
An improved transistor design and methods of construction and testing for same. The novel transistor design method includes the steps of providing a transistor (10') with multiple common gate areas; connecting each gate area to a pad; and adjusting the ratio of the area of the pad to the total of the gate areas to provide a predetermined ratio. The ratio may be adjusted by adjusting the size of the gate, in a single gate implementation, or adjusting the number of gates in a multiple gate configuration. The novel transistor includes a substrate (12'), at least one source (26') disposed on the substrate; at least one drain (28') disposed on the substrate; and at least one gate (30') disposed on the substrate between the source and the drain. The gate has a first layer of at least partially conductive material of area Ag connected to a pad (34') of area Ap. In accordance with the present teachings, the antenna ratio R of the area of the pad Ap to the area of the gate Ag is a predetermined number. In practice, the ratio R would be chosen to be a minimum so that deleterious plasma currents attracted to the gate area would be reduced. In a particular implementation, the transistor includes plural gates each having a layer of at least partially conductive material of area Agn where n is any integer between 1 and N and where N is the total number of gates. In this case, the plural gates are interconnected and the ratio R is a predetermined number equal to Ap/Agtotal, where Agtotal is the sum of the areas Agn and n is any integer between 1 and N. The novel method for testing multiple gate transistors includes the steps of connecting a first terminal of each of said transistors to a ground; interconnecting a second terminal of each transistor and applying a first source of supply potential; and selectively applying a second source of supply potential to a third terminal of a selected transistor.
Abstract:
There is provided an improved method for eliminating of cycling-induced electron trapping in the tunneling oxide of flash EEPROM devices. A relatively low positive pulse voltage is applied to a source region of the EEPROM devices during an entire erase cycle. Simultaneously, a negative ramp voltage is applied to a control gate of the EEPROM devices during the entire erase cycle so as to accomplish an averaging tunneling field from the beginning of the erase cycle to the end of the erase cycle.
Abstract:
A subscriber power controller (7), which regulates a voltage supply for an Integrated Services Digital Network (ISDN). The power controller and the ISDN must be protected from low input voltage and low input power. The invention provides low voltage and low power detection circuits as part of the power controller. A low voltage detection circuit (12) which generates a first detection signal is formed of a comparator with hysteresis (24, Fig. 3) and an ECL output stage (26, Fig. 3). A low power detection circuit (22) which provides a second detection signal is formed of a comparator with hysteresis (43, Fig. 4) and an output stage (44, Fig. 4). The first detection signal is used to disable the power controller and the second detection signal is used to disable high power functions of the ISDN.
Abstract:
A reset and synchronization interface circuit (10) for use in a subscriber power controller (7) includes a reset circuit portion (12) and a synchronization circuit portion (14). The reset circuit portion is formed of a first comparator (16), a second comparator (18), and an output network (20) for generating a reset signal. The first comparator compares an input signal with the reference voltage to produce a first output signal and a second output signal. The second comparator compares the first output signal from the first comparator with the reference voltage to produce a third output signal. The output network inverts and shifts the level of the third output signal to produce the reset signal. The synchronization circuit portion is formed of a third comparator (22) and an AND logic gate (24) for generating a modified synchronizing signal. The third comparator inverts a synchronizing clock signal to generate a complementary synchronizing clock signal. The AND logic gate combines logically the second output signal from the first comparator with the complementary synchronizing clock signal to produce the modified synchronizing signal.
Abstract:
Three-level ECL or four-level CML are feasible when a low drop current source (34) is incorporated in the series-gated arrangement. The low drop current source (34) consumes less than one-tenth of the voltage span between VCC and ground. A greater portion of the voltage span between Vcc and ground, up to 4 volts, is therefore reserved for the three ECL levels or four CML levels of logic. Conventional power supplies are utilized yet the number of logic functions is increased.
Abstract:
A five volt only E2 PROM cell including metal bit read (12) and bit ground column (16) lines and polysilicon word select (50) and program row (54) lines. An interconnected word select and stacked gate transistor (52) serially connect the bit read and bit ground lines. The cell also includes a tunneling structure (24), disposed below the program row line (54), for charging or uncharging a floating polysilicon gate in the stacked gate transistor. The bit ground line (16) is disconnected from ground during the charging and uncharging operations.
Abstract:
An apparatus and a method for character and graphics pattern generation in a bit mapped graphics display system that includes a pixel data manager (14) for supplying character bit maps and graphics patterns to a visible display memory (22). A character information memory (24) is utilized for the storage of character descriptive information which includes an address table (26), macro-instructions (28), (30), and (32) and character bit maps (34), (36) and (38). Each character in a set of characters has an associated macro-instruction and character bit map. The address table contains memory addresses that point to the macro-instructions. Each macro-instruction contains executable instructions that establish the size and location of a corresponding character bit map. To supply a character to the visible display memory, the pixel data manager fetches and executes a corresponding macro-instruction. Overhead burden on the central processing unit is minimized.
Abstract:
A bandgap reference voltage generator includes compensation circuitry (33-37, 43-44 and 46) that renders the performance of the bandgap reference voltage generator independent of the static value of the supply voltage (Vcc) by providing a constant current through the self-regulating loop in the generator. The compensation circuitry (33-37, 43-44 and 46) effectively provides compensating terms for each Vcc-dependent term in the network equation that describes the operation of the bandgap reference voltage generator. In a preferred embodiment, the compensating terms also serve to make the operation of the bandgap voltage generator independent of temperature.
Abstract:
An improved logic level translator circuit for translating non-TTL circuits (82) to logic signals of TTL circuits (128). The translator circuit as presented includes circuitry (52 and 72) for providing elimination of noise spiking and the resultant erroneous switching caused by simultaneous conduction of TTL circuit outputs (60) as they change states.
Abstract:
A method and device for decoding two-dimensionally encoded digital facsimile signals. The method includes (a) accumulating the run lengths of color change picture elements in the reference line, (b) decoding a codeword to generate a displacement value, (c) combining the accumulated run length of a reference line color change picture element and a displacement value to obtain accumulated run lengths of coding line color change picture elements, and (d) determining the difference between accumulated run lengths of a coding line color change picture element. The difference is the decoded data. The device has a control logic (70), a reference line processing unit (80) for generating the accumulated run lengths of color change picture elements in the reference line, a coding line processing unit (81) for generating displacement values from the encoded codewords, and a first combining unit part (82) and second combining unit part (83) for combining the reference line accumulated run lengths and the displacement values to obtain the accumulated run lengths of color change picture elements in the coding line and for determining the differences between coding lines accumulated run lengths, which are the decoded run lengths of the color units in the coding line, respectively.