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    Electron beam source and its manufacturing method and electron beam source apparatus and electron beam apparatus using the same
    161.
    发明授权
    Electron beam source and its manufacturing method and electron beam source apparatus and electron beam apparatus using the same 失效
    电子束源及其制造方法和电子束源装置及使用其的电子束装置

    公开(公告)号：US5811819A

    公开(公告)日：1998-09-22

    申请号：US568865

    申请日：1995-12-05

    Applicant: Takashi Ohshima ,  Hiroyuki Shinada ,  Katsuhiro Kuroda

    Inventor： Takashi Ohshima ,  Hiroyuki Shinada ,  Katsuhiro Kuroda

    IPC: H01J1/304 ,  H01J1/308 ,  H01J9/02 ,  H01J37/073 ,  H01J37/06

    CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J1/308 ,  H01J37/073 ,  H01J2201/30426

    Abstract: An electron beam source is provided with an electron forming means such as a doped layer of Si for forming conduction band electrons near the surface of the pointed tip of a needle-shaped structure while suppressing emission of electrons from a valence band. The surface of the pointed tip of the needle-shaped structure is formed with a single-crystal semiconductor or insulator. Preferably a surface passivation layer and/or a highly doped layer is formed on the surface of the needle-shaped structure. Also, means for exciting electrons in a valence band may be provided. An electron beam source apparatus and electron beam apparatus incorporating the electron beam source as defined above are also disclosed.

    Abstract translation: 电子束源设置有诸如Si的掺杂层的电子形成装置，用于在抑制从价带发射电子的同时在针状结构的尖端的表面附近形成导带电子。 针状结构的尖端的表面由单晶半导体或绝缘体形成。 优选地，在针状结构的表面上形成表面钝化层和/或高掺杂层。 此外，也可以提供用于激发在价带中的电子的装置。 还公开了包含如上所述的电子束源的电子束源装置和电子束装置。

    Cathode, electron beam emission apparatus using the same, and method of manufacturing the cathode
    162.
    发明授权
    Cathode, electron beam emission apparatus using the same, and method of manufacturing the cathode 失效
    阴极，使用其的电子束发射装置，以及制造阴极的方法

    公开(公告)号：US5763880A

    公开(公告)日：1998-06-09

    申请号：US610489

    申请日：1996-03-04

    Applicant: Hidetoshi Nisiyama ,  Masakuni Okamoto ,  Hiroyuki Shinada ,  Katsuhiro Kuroda

    Inventor： Hidetoshi Nisiyama ,  Masakuni Okamoto ,  Hiroyuki Shinada ,  Katsuhiro Kuroda

    IPC: H01J1/304 ,  H01J37/06 ,  H01J37/073 ,  H01J3/02

    CPC classification number: H01J37/073 ,  H01J1/304 ,  H01J2201/30426 ,  H01J2201/317 ,  H01J2237/06316

    Abstract: A cathode (e.g., a Schottky emission cathode) having an electron emitter of a tungsten single-crystal with a sharp point, and a heater connected to the electron emitter to heat it. The work function of the crystal face of the point of the electron emitter is reduced by providing adsorbed thereon a nitride of Zr, Ti, Y, Nb, Sc, V or La, or an oxide of Y, Sc, V or La. The nitride or oxide can be formed as a reservoir on the heater (from where it thermally diffuses to the point), or chemically adsorbed on the point. For forming the nitride or oxide on the point, the metal forming the nitride or oxide can be provided on the point and reacted with nitrogen or oxygen thereat to form the nitride or oxide; to provide the metal on the point, the metal forming the nitride or oxide can either be evaporated onto the point, or can form a reservoir on the heater and thermally diffuse therefrom to the point. The effect of reducing the work function results in a cathode having a narrow FWHM (full width at half maximum) of emission electrons and a high current density.

    Abstract translation: 具有具有尖锐点的钨单晶的电子发射体的阴极（例如，肖特基发射阴极）和连接到电子发射器以加热它的加热器。 通过在其上吸附Zr，Ti，Y，Nb，Sc，V或La的氮化物或Y，Sc，V或La的氧化物，可以减少电子发射体点的晶面的功函数。 氮化物或氧化物可以形成为加热器上的储存器（从其热扩散到该点）或化学吸附在该点上。 为了在该点上形成氮化物或氧化物，形成氮化物或氧化物的金属可以在该点上提供并在其上与氮气或氧气反应以形成氮化物或氧化物; 为了在该点上提供金属，形成氮化物或氧化物的金属可以蒸发到点上，或者可以在加热器上形成储存器，并从其中散射到该点。 降低功函数的效果导致发射电子具有窄FWHM（半高全宽）和高电流密度的阴极。

    Method of making a field emission electron source with random micro-tip structures
    165.
    发明授权
    Method of making a field emission electron source with random micro-tip structures 失效
    制备具有随机微尖端结构的场发射电子源的方法

    公开(公告)号：US5628659A

    公开(公告)日：1997-05-13

    申请号：US427464

    申请日：1995-04-24

    Applicant: Chenggang Xie ,  Nalin Kumar ,  Howard K. Schmidt

    Inventor： Chenggang Xie ,  Nalin Kumar ,  Howard K. Schmidt

    IPC: H01J9/02 ,  H01J1/30 ,  H01J9/42

    CPC classification number: H01J9/025 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319

    Abstract: A system and method is available for fabricating a field emitter device, where in an emitter material, such as copper, is deposited over a resistive layer which has been deposited upon a substrate. Two ion beam sources are utilized. The first ion beam source is directed at a target material, such as molybdenum, for sputtering molybdenum onto the emitter material. The second ion beam source is utilized to etch the emitter material to produce cones or micro-tips. A low work function material, such as amorphous diamond, is then deposited over the micro-tips.

    Abstract translation: 一种系统和方法可用于制造场致发射器件，其中发射极材料（例如铜）沉积在已沉积在衬底上的电阻层上。 使用两个离子束源。 第一离子束源指向诸如钼的靶材料，用于将钼溅射到发射极材料上。 第二离子束源用于蚀刻发射体材料以产生锥体或微尖端。 然后将诸如无定形金刚石的低功函数材料沉积在微尖端上。

    Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology
    169.
    发明授权
    Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology 失效
    使用化学机械抛光技术在冷阴极发射器尖端周围形成自对准栅极结构的方法

    公开(公告)号：US5372973A

    公开(公告)日：1994-12-13

    申请号：US53794

    申请日：1993-04-27

    Applicant: Trung T. Doan ,  J. Brett Rolfson ,  Tyler A. Lowrey ,  David A. Cathey

    Inventor： Trung T. Doan ,  J. Brett Rolfson ,  Tyler A. Lowrey ,  David A. Cathey

    IPC: H01J1/304 ,  H01J9/02 ,  H01L21/3105 ,  H01L21/465

    CPC classification number: H01J9/025 ,  H01L21/31053 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2209/0226

    Abstract: A chemical mechanical polishing process for the formation of self-aligned gate structures surrounding an electron emission tip for use in field emission displays in which the emission tip is i) optionally sharpened through oxidation, ii) deposited with a conformal insulating material, iii) deposited with a flowable insulating material, which is reflowed below the level of the tip, iv) optionally deposited with another insulating material, v) deposited with a conductive material layer, and vi) optionally, deposited with a buffering material, vii) planarized with a chemical mechanical planarization (CMP) step, to expose the conformal insulating layer, viii) wet etched to remove the insulating material and thereby expose the emission tip, afterwhich ix) the emitter tip may be coated with a material having a lower work function than silicon.

    Abstract translation: 用于形成围绕用于场发射显示器中的电子发射尖端的自对准栅极结构的化学机械抛光工艺，其中发射尖端i）可选地通过氧化锐化，ii）用保形绝缘材料沉积，iii）沉积 具有可流动的绝缘材料，其被回流到尖端的水平面以下，iv）任选地沉积有另外的绝缘材料，v）沉积有导电材料层，以及vi）任选地沉积有缓冲材料，vii） 化学机械平面化（CMP）步骤，暴露保形绝缘层，viii）湿式蚀刻以去除绝缘材料，从而暴露发射尖端，之后ix）发射极尖端可以涂覆具有比硅功函数低的材料 。

    Field electron emission device
    170.
    发明授权
    Field electron emission device 失效
    场电子发射装置

    公开(公告)号：US5229682A

    公开(公告)日：1993-07-20

    申请号：US841194

    申请日：1992-02-21

    Applicant: Hiroshi Komatsu

    Inventor： Hiroshi Komatsu

    IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01L23/544

    CPC classification number: H01J3/022 ,  H01J1/3042 ,  H01J9/025 ,  H01L23/544 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2209/0226 ,  H01L2223/54473 ,  H01L2924/0002

    Abstract: A field emission device and method for manufacturing which comprises using a diffusion mask to preserve an area of a silicon substrate for use as a cathode while all around the cathode the substrate is being diffused with oxygen to form an insulating layer. And further comprising depositing a molybdenum gate electrode layer on the insulating layer and etching the molybdenum gate electrode layer such that the diffusion mask falls off and the insulating layer is dissolved around the cathode through the hole formed in the gate electrode layer by the diffusion mask being removed. The gate electrode openings are therefore automatically and independently self-aligned with their respective cathodes.

    Abstract translation: 一种场致发射器件及其制造方法，其包括使用扩散掩模来保留用于阴极的硅衬底的面积，同时所述衬底周围的所述衬底全部被氧扩散以形成绝缘层。 并且还包括在所述绝缘层上沉积钼栅极层并蚀刻所述钼栅极层，使得所述扩散掩模脱落，并且所述绝缘层通过所述扩散掩模通过形成在所述栅电极层中的所述孔溶解在所述阴极周围 删除。 因此，栅电极开口自动且独立地与它们各自的阴极自对准。

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