公开(公告)号：US4907051A

公开(公告)日：1990-03-06

申请号：US193502

申请日：1988-05-12

Applicant: Shaw Ehara

Inventor： Shaw Ehara

IPC: H01J1/34 ,  H01J40/06 ,  H01J43/08 ,  H01L31/0248

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A photocathode with high photoelectric conversion ratio over an extended wavelength range of incident light has a hetero junction formed between thin films of a p-type amorphous silicon alloy having energy gap matching the energy of the incident light and an n-type semiconductor with small work function or large coefficient of secondary electron emission.

Abstract translation: 在入射光的扩展波长范围内具有高光电转换比的光电阴极具有在具有与入射光的能量匹配的能隙的p型非晶硅合金的薄膜和小工作的n型半导体之间形成的异质结 二次电子发射功能或大系数。

公开(公告)号：US4751423A

公开(公告)日：1988-06-14

申请号：US933923

申请日：1986-11-24

Applicant: Bernard Munter ,  Paul de Groot ,  Claude Weisbuch ,  Yves Henry

Inventor： Bernard Munter ,  Paul de Groot ,  Claude Weisbuch ,  Yves Henry

IPC: H01J1/34 ,  H01J31/26 ,  H01J40/06

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A photocathode having a low dark current comprises a first layer consisting of P.sup.+ type semiconductor material which is transparent to all wavelengths of the light to be detected, a second layer consisting of P.sup.+ type semiconductor in which the forbidden band is of sufficiently small width to convert the photons of the light to be detected into electron-hole pairs, at least one intercalary layer located within the second layer and consisting of P-type or N-type semiconductor material for creating a potential barrier with respect to the second layer, the thickness of said intercalary layer being of sufficiently low value to permit the passage of electrons by tunnel effect with high probability but of sufficiently high value to stop the greater part of a hole current, a metallic electrode for biasing the photocathode in order to accelerate the electrons of the electron-hole pairs created within the second layer by the light, a last layer for reducing the energy-gap potential with respect to the second layer in order to emit into the vacuum the electrons which have thus been accelerated.

Abstract translation: 具有低暗电流的光电阴极包括由对待检测光的所有波长透明的P +型半导体材料构成的第一层，由禁带宽度足够小的P +型半导体构成的第二层，以转换 要被检测的光的光子到电子 - 空穴对中，位于第二层内的至少一个层间层，由用于产生相对于第二层的势垒的P型或N型半导体材料构成，厚度 的所述闰层具有足够低的值，以允许以很高的概率通过隧道效应的电子，但是具有足够高的值以阻止大部分空穴电流，用于偏置光电阴极的金属电极以加速电子的 通过光产生在第二层内的电子 - 空穴对，用于降低相对于t的能隙电势的最后一层 o第二层，以便将真空中的电子发射到真空中。

公开(公告)号：US4713353A

公开(公告)日：1987-12-15

申请号：US881967

申请日：1986-07-03

Applicant: Rudolf Forster ,  Suso Weber ,  Hans-Jurgen Pyka

Inventor： Rudolf Forster ,  Suso Weber ,  Hans-Jurgen Pyka

IPC: H01J9/12 ,  H01J29/38 ,  H01L31/00

CPC classification number: H01J9/12 ,  H01J29/38 ,  H01J2201/3423

Abstract: A method of producing a transparent photocathode comprises applying a multi-layer wafer to a carrier service so that the wafer projects beyond the carrier on all sides, effecting a chemical denudation on the substrate and after the chemical denudation on the substrate removing at least the overhanging parts of the multi-layer wafer mechanically. Chemical denudations are advantageously made by etching. The substrate comprises a gallium arsenide. The subsequent layers in the active photocathode semiconductor layer are applied by an epitaxial process.

Abstract translation: 制造透明光电阴极的方法包括将多层晶片应用于载体服务，使得晶片在所有侧面上突出超过载体，在基板上进行化学剥蚀，并且在基板上的化学剥蚀之后至少去除突出部分 多层晶片的部分机械地。 通过蚀刻有利地进行化学剥蚀。 衬底包括砷化镓。 通过外延工艺施加有源光电阴极半导体层中的后续层。

公开(公告)号：US4709185A

公开(公告)日：1987-11-24

申请号：US743221

申请日：1985-06-10

Applicant: Arthur M. E. Hoeberechts ,  Henricus A. M. Van Hal ,  Harm Tolner ,  Gerardus G. P. Van Gorkom

Inventor： Arthur M. E. Hoeberechts ,  Henricus A. M. Van Hal ,  Harm Tolner ,  Gerardus G. P. Van Gorkom

IPC: H01J1/30 ,  H01J1/13 ,  H01J1/308 ,  H01J1/32 ,  H01J1/34 ,  H01J9/02 ,  H01J9/04 ,  H01J9/12 ,  C23C14/00

CPC classification number: H01J1/32 ,  H01J1/13 ,  H01J1/308 ,  H01J1/34 ,  H01J2201/3423

Abstract: An electron-emitting surface is provided with a material reducing the electron work function, which is obtained from a suitable reaction. The reaction mixture or the product to be decomposed, for example CsN.sub.3, is present in a surface depression of a semiconductor body, while one or more pn junctions act as a heating diode. Upon heating, cesium is released and deposited on the electron-emitting surface.

Abstract translation: 电子发射表面设置有从合适的反应获得的降低电子功函数的材料。 反应混合物或待分解的产物（例如CsN 3）存在于半导体本体的表面凹陷中，而一个或多个pn结用作加热二极管。 加热时，铯释放并沉积在电子发射表面上。

公开(公告)号：US4687922A

公开(公告)日：1987-08-18

申请号：US797060

申请日：1985-11-12

Applicant: Michel G. Lemonier ,  Maurice L. J. Petit

Inventor： Michel G. Lemonier ,  Maurice L. J. Petit

IPC: H04N5/225 ,  H01J1/34 ,  H01J9/12 ,  H01J29/44 ,  H01J29/45 ,  H01J31/26 ,  H01L27/148 ,  H04N5/232 ,  H04N5/235 ,  H01J31/08 ,  H01J40/06 ,  H01J40/16 ,  H01L25/00

CPC classification number: H01J9/12 ,  H01J1/34 ,  H01J31/26 ,  H01L27/148 ,  H01J2201/3423 ,  H01L2224/48091

Abstract: The invention relates to an image detector for a camera operating in a "day" mode and a "night" mode. The detector comprises an evacuated envelope containing a semitransparent photocathode for the transmission of incident photons or for converting photons into photoelectrons, depending on whether the mode is "day" or "night", respectively. The detector also comprises a detector capable of converting the incident photons or the photoelectrons into an electrical image signal. The image detector further includes electronic means for focussing the photoelectrons onto the detector, and optical means for focussing the photons onto the photocathode or onto the detector. The photocathode comprises a thin layer having at least one active layer of a III-V n-type material. The detector consists of a two-dimensional charge transfer device. The electronic means for focussing the photoelectrons on the charge transfer device comprises proximity focussing means.

Abstract translation: 本发明涉及一种以“日”模式和“夜”模式操作的摄像机的图像检测器。 检测器包括分别根据模式是“日”还是“夜”，包含用于透射入射光子或用于将光子转换成光电子的半透明光电阴极的真空外壳。 检测器还包括能够将入射的光子或光电子转换为电图像信号的检测器。 图像检测器还包括用于将光电子聚焦到检测器上的电子装置和用于将光子聚焦到光电阴极或检测器上的光学装置。 光电阴极包括具有III-V n型材料的至少一个活性层的薄层。 检测器由二维电荷转移装置组成。 用于将光电子聚焦在电荷转移装置上的电子装置包括接近聚焦装置。

公开(公告)号：US4075654A

公开(公告)日：1978-02-21

申请号：US735333

申请日：1976-10-26

Applicant: Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

Inventor： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

IPC: H01J1/34 ,  H01J9/12 ,  H01J29/45 ,  H01L27/14 ,  H01L29/161

CPC classification number: H01J9/12 ,  H01J1/34 ,  H01J29/451 ,  H01J2201/3423

Abstract: Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.

公开(公告)号：US3986065A

公开(公告)日：1976-10-12

申请号：US517762

申请日：1974-10-24

Applicant: Jacques Isaac Pankove

Inventor： Jacques Isaac Pankove

IPC: H01J1/32 ,  H01J1/34 ,  H01J39/06 ,  H01J1/30 ,  H01J19/24

CPC classification number: H01J1/34 ,  H01J1/32 ,  H01J2201/3423

Abstract: A high emission of electrons, as a result of negative electron affinity, has been achieved from an insulating nitride coated with a film of an electropositive work function reducing material.

Abstract translation: 由负电子亲和力导致的高电子发射已经由涂覆有正电功能降低功能材料的膜的绝缘氮化物实现。

公开(公告)号：US3959038A

公开(公告)日：1976-05-25

申请号：US573288

申请日：1975-04-30

Applicant: William A. Gutierrez ,  Herbert L. Wilson

Inventor： William A. Gutierrez ,  Herbert L. Wilson

IPC: H01J1/34 ,  H01L7/36 ,  H01L7/38 ,  H01L7/54

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: Transmission mode negative electron affinity gallium arsenide (GaAs) photthodes and dynodes and techniques for the fabrication thereof, utilizing multilayers of GaAs and gallium alluminum arsenide (GaAlAs) wherein the GaAs layer serves as the emitting layer and the GaAlAs serves as an intermediate construction layer and/or as an integral part of the component.

Abstract translation: 透射模式负电子亲和势砷化镓（GaAs）光电阴极及其制造方法，利用GaAs和镓铝砷化镓（GaAlAs）的多层，其中GaAs层用作发光层，GaAlAs用作中间构造层， /或作为组件的组成部分。

公开(公告)号：US3953880A

公开(公告)日：1976-04-27

申请号：US455231

申请日：1974-03-27

Applicant: Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

Inventor： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

IPC: H01J1/34 ,  H01J9/12 ,  H01J29/38 ,  H01L27/14 ,  H01L29/161 ,  H01L31/00

CPC classification number: H01J1/34 ,  H01J29/38 ,  H01J9/12 ,  H01J2201/3423

Abstract: Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.

Abstract translation: 半导体光电子发射器件包括两个或多个不同半导体的混合晶体，形成具有直接跃迁类型的异质结，该直接跃迁类型限定可被光电子激发的第一区域，以及限定禁带宽度大于第二区域的第二区域的间接跃迁类型 第一区域，其表面是光电子发射表面。

公开(公告)号：US3932883A

公开(公告)日：1976-01-13

申请号：US482700

申请日：1974-06-24

Applicant: Michael Charles Rowland ,  David Robert Wight

Inventor： Michael Charles Rowland ,  David Robert Wight

IPC: H01J1/34 ,  H01L29/161 ,  H01L27/14 ,  H01L29/20 ,  H01L33/00

CPC classification number: H01J1/34 ,  H01J2201/3423 ,  Y10S148/005 ,  Y10S148/066 ,  Y10S148/067 ,  Y10S148/072

Abstract: A transmission photocathode comprising a crystal substrate transparent to the radiation to be detected, at least one epitaxial crystalline intermediate layer having a lattice constant close to that of the detector layer and transparent to the radiation to be detected, and a p-type group III-V compound detector layer. Preferably the intermediate layer is p-type.

Abstract translation: 一种透射光电阴极，包括对待检测的辐射透明的晶体衬底，至少一个晶格常数接近检测器层的晶格常数并对被检测的辐射透明的外延晶体中间层，以及p型III- V复合检测器层。 优选地，中间层是p型。