中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

608 records (took 0.035 seconds)

    SWITCH ARRAY
    173.
    发明公开
    SWITCH ARRAY 审中-公开
    SCHALTARRAY

    公开(公告)号：EP1863046A1

    公开(公告)日：2007-12-05

    申请号：EP06729485.0

    申请日：2006-03-20

    Applicant: TOKYO ELECTRON LIMITED ,  OCTEC INC.

    Inventor： HAYASHI, Masato ,  YAKABE, Masami ,  HASEBE, Tetsuya ,  HARADA, Muneo ,  OKUMURA, Katsuya

    IPC: H01H1/26 ,  B81B3/00 ,  B81B7/04

    CPC classification number: H01H1/0036 ,  B81B3/0054 ,  B81B2201/014 ,  B81B2203/053 ,  H01H1/24 ,  H01H37/46 ,  H01H67/22 ,  H01H2001/0042 ,  H01H2037/008

    Abstract: A first wiring layer 16 is disposed on an insulating film 14 on the lower surface of an upper substrate 15, while a second wiring layer 13 three-dimensionally crossing the first wiring layer 16 is provided on the insulating film 12 on a lower substrate 11. A cantilever 17 has one end connected to the first wiring layer 16 and the other end opposed to the second wiring layer 13 with a space therebetween. A thermoplastic sheet 19 is arranged on the upper substrate 15 so as to cover the through-hole 18. The thermoplastic sheet 19 is pressed by a heated pin 20 against the cantilever 17 and deformed so as to maintain the connection between the cantilever 17 and the second wiring layer 13, and therefore close the switch 10.

    Abstract translation: 第一布线层16设置在上基板15的下表面上的绝缘膜14上，而在第一布线层16上三维交叉的第二布线层13设置在下基板11上的绝缘膜12上。 悬臂17的一端与第一配线层16连接，另一端与第二配线层13相对置，其间具有间隔。 热塑性片19布置在上基板15上以覆盖通孔18.热塑片19被加热销20压靠在悬臂17上并变形，从而保持悬臂17和 第二布线层13，因此关闭开关10。

    Trilayered beam MEMS device and related methods
    174.
    发明公开
    Trilayered beam MEMS device and related methods 有权
    MEMS-Schalter mit dreischichtigem Biegebalken unddiesbezüglicheVerfahren

    公开(公告)号：EP1717195A1

    公开(公告)日：2006-11-02

    申请号：EP06118802.5

    申请日：2002-11-08

    Applicant: WiSpry, Inc.

    Inventor： Cunningham, Shawn, J. ,  Tatic-Lucic, Svetlana

    IPC: B81B3/00

    CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

    Abstract: Trilayered Beam MEMS Device and Related Methods. According to one embodiment, a method for fabricating a trilayered beam is provided. The method can include depositing a sacrificial layer on a substrate and depositing a first conductive layer on the sacrificial layer. The method can also include forming a first conductive microstructure by removing a portion of the first conductive layer. Furthermore, the method can include depositing a structural layer on the first conductive microstructure, the sacrificial layer, and the substrate and forming a via through the structural layer to the first conductive microstructure. Still furthermore, the method can include the following: depositing a second conductive layer on the structural layer and in the via; forming a second conductive microstructure by removing a portion of the second conductive layer, wherein the second conductive microstructure electrically communicates with the first conductive microstructure through the via; and removing a sufficient amount of the sacrificial layer so as to separate the first conductive microstructure from the substrate, wherein the structural layer is supported by the substrate at a first end and is freely suspended above the substrate at an opposing second end.

    Abstract translation: 三层梁MEMS器件及相关方法。 根据一个实施例，提供一种制造三层梁的方法。 该方法可以包括在衬底上沉积牺牲层并在牺牲层上沉积第一导电层。 该方法还可以包括通过去除第一导电层的一部分来形成第一导电微结构。 此外，该方法可以包括在第一导电微结构，牺牲层和衬底上沉积结构层，并且通过结构层将通孔形成到第一导电微结构。 此外，该方法可以包括以下：在结构层和通孔中沉积第二导电层; 通过去除所述第二导电层的一部分来形成第二导电微结构，其中所述第二导电微结构通过所述通孔与所述第一导电微结构电连通; 并且去除足够量的牺牲层以便将第一导电微结构与衬底分开，其中结构层在第一端由衬底支撑并且在相对的第二端处自由地悬挂在衬底上方。

    Trilayered Beam MEMS device and related methods
    175.
    发明公开
    Trilayered Beam MEMS device and related methods 有权
    三层梁MEMS器件及相关方法

    公开(公告)号：EP1717194A1

    公开(公告)日：2006-11-02

    申请号：EP06118800.9

    申请日：2002-11-08

    Applicant: WiSpry, Inc.

    Inventor： Cunningham, Shawn, J. ,  Tatic-Lucic, Svetlana

    IPC: B81B3/00

    CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

    Abstract: Trilayered Beam MEMS Device and Related Methods. According to one embodiment, a method for fabricating a trilayered beam is provided. The method can include depositing a sacrificial layer on a substrate and depositing a first conductive layer on the sacrificial layer. The method can also include forming a first conductive microstructure by removing a portion of the first conductive layer. Furthermore, the method can include depositing a structural layer on the first conductive microstructure, the sacrificial layer, and the substrate and forming a via through the structural layer to the first conductive microstructure. Still furthermore, the method can include the following: depositing a second conductive layer on the structural layer and in the via; forming a second conductive microstructure by removing a portion of the second conductive layer, wherein the second conductive microstructure electrically communicates with the first conductive microstructure through the via; and removing a sufficient amount of the sacrificial layer so as to separate the first conductive microstructure from the substrate, wherein the structural layer is supported by the substrate at a first end and is freely suspended above the substrate at an opposing second end.

    Abstract translation: 三层束MEMS器件及相关方法。 根据一个实施例，提供了一种用于制造三层光束的方法。 该方法可以包括在衬底上沉积牺牲层并且在牺牲层上沉积第一导电层。 该方法还可以包括通过去除第一导电层的一部分来形成第一导电微结构。 此外，该方法可以包括在第一导电微结构，牺牲层和衬底上沉积结构层，并且形成穿过结构层到达第一导电微结构的通孔。 此外，该方法可以包括以下步骤：在结构层上和通孔中沉积第二导电层; 通过去除所述第二导电层的一部分来形成第二导电微结构，其中所述第二导电微结构通过所述通孔与所述第一导电微结构电连通; 以及去除足够量的牺牲层以便将第一导电微结构与衬底分离，其中结构层在第一端处由衬底支撑并且在相对的第二端处自由地悬挂在衬底上方。

    NANOELECTROMECHANICAL TRANSISTORS AND SWITCH SYSTEMS
    178.
    发明公开
    NANOELECTROMECHANICAL TRANSISTORS AND SWITCH SYSTEMS 审中-公开
    纳米机电晶体管和开关系统

    公开(公告)号：EP1628907A1

    公开(公告)日：2006-03-01

    申请号：EP03817176.5

    申请日：2003-12-18

    Applicant: Ambient Systems, Inc.

    Inventor： PINKERTON, Joseph, F. ,  HARLAN, John, C. ,  MULLEN, Jeffrey, D.

    IPC: B81B3/00

    CPC classification number: G11C23/00 ,  B81B3/0021 ,  B81B2201/014 ,  B82Y10/00 ,  B82Y30/00 ,  G11C13/025 ,  G11C2213/16 ,  H01H1/0094 ,  H01H1/027 ,  Y10S977/732

    Abstract: Nanoelectromechanical switch systems (NEMSS) that are structured around the mechanical manipulation of nanotubes are provided. Such NEMSS can realize the functionality of, for example, automatic switches, adjustable diodes, amplifiers, inverters, variable resistors, pulse position modulators (PPMs), and transistors. In one embodiment, a nanotube is anchored at one end to a base member. The nanotube is also coupled to a voltage source. This voltage source creates an electric charge at the tip of the free-moving-end of the nanotube that is representative of the polarity and intensity of the voltage source. The free-moving end of this nanotube can be electrically controlled by applying an electric charge to a nearby charge member layer that is either of the same (repelling) or opposite (attracting) polarity of the nanotube. A contact layer is then placed in the proximity of the free-moving end of the nanotube such that when a particular electric charge is placed on the nanotube, the nanotube electrically couples the contact layer.

    MEMS ACTUATORS
    179.
    发明公开
    MEMS ACTUATORS 有权
    MEMS驱动器

    公开(公告)号：EP1620349A2

    公开(公告)日：2006-02-01

    申请号：EP04727485.7

    申请日：2004-04-15

    Applicant: Simpler Networks Inc.

    Inventor： M NARD, Stéphane ,  LASSONDE, Normand ,  VILLENEUVE, Jean-Claude

    IPC: B81B3/00

    CPC classification number: H01H61/04 ,  B81B3/0024 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/051 ,  B81B2203/053 ,  F03G7/06 ,  H01H2001/0047 ,  H01H2001/0078 ,  H01H2061/006 ,  H01H2061/008

    Abstract: The MEMS cantilever actuator (10) is designed to be mounted on a substrate (12). The actuator (10) comprises an elongated hot arm member (20) having two spaced-apart portions (22), each provided at one end with a corresponding anchor pad (24) connected to the substrate (12). The portions (22) are connected together at a common end (26) that is opposite the anchor pads (24). It further comprises an elongated cold arm member (30) adjacent to and substantially parallel of the hot arm member (20), the cold arm member (30) having at one end an anchor pad (32) connected to the substrate (12), and a free end (34) that is opposite the anchor pad (32) thereof. A dielectric tether (40) is attached over the common end (26) of the portions (22) of the hot arm member (20) and the free end (34) of the cold arm member (30). This actuator (10) allows improving the performance, reliability and manufacturability of MEMS switches (100).

Patent Agency Ranking