Abstract:
The invention relates to a semiconductor actuator comprising a substrate base (1), a bending structure (2) which is connected to the substrate base and can be bent at least partially in relation to the substrate base and is provided with semiconductor compounds based on nitrides of main group III elements, and at least two electrical supply contacts (3a, 3b) for impressing an electrical current into the bending structure or for applying an electrical voltage to the bending structure. At least two of the supply contacts are interspaced respectively on the bending structure and/or integrated into the same.
Abstract:
A mechanical structure comprises an element which is moveable by nonmechanical means, such as heat or radiation, between a first state having a first shape and a second state having a second shape different. To this end, the element includes a layer of oriented polymerized liquid crystal which exhibits an anisotropic expansion when subjected to such means. In order to facilitate manufacture the element is positioned on a substrate which has a region of high adhesiveness and a region of low adhesiveness for polymerized liquid crystal. To manufacture such structures a layer of oriented polymerizable liquid crystal is formed on a substrate (201) which is provided with a patterned surface that provides adhesive regions (204) with high adhesiveness to polymerized liquid crystal and nonadhesive regions (203) with low adhesiveness to polymerized liquid crystal. After polymerization, for example a thermal shock is applied which causes the layer of polymerized liquid crystal to delaminate at the non-adhering region while remaining fixed to the adhesive regions. Thus, the method does not require time-consuming under-etching steps.
Abstract:
A mirror device comprises a mirror (2), and a support mechanism for elastically supporting the mirror (2) with respect to a base board (1) in a floating state above the base board (1) and tiltably in an optional direction. The support mechanism comprises three support sections (3A, 3B, 3C) that mechanically connect the base board (1) and the mirror (2). Each of the support sections (3A, 3B, 3C) has one or more plate springs (5) composed of one or more layers of thin film. The plate springs (5) are connected at one of their respective ends to the base board (1) through legs (9) having a portion rising from the base board (1), and mechanically connected at the other ends to the mirror (2) through connectors having a portion rising from the other ends. The mirror (2) is supported with respect to the base board (1) only through the plate springs (5) of the support sections (3A, 3B, 3C). Thereby, size reduction and mass productivity can be further improved while retaining superior optical characteristics.
Abstract:
This invention relates to the construction of microfabricated devices and, in particular, to types of microfabricated devices requiring thermal isolation from the substrates upon which they are built. This invention discloses vertical thermal isolators and methods of fabricating the vertical thermal isolators. Vertical thermal isolators offer an advantage over thermal isolators of the prior art, which were substantially horizontal in nature, in that less wafer real estate is required for the use of the vertical thermal isolators, thereby allowing a greater density per unit area of the microfabricated devices.
Abstract:
An optical scanning device is provided. The optical scanning device includes a mirror having an optical reflection surface, a movable frame supporting the mirror, a pair of drive beams supporting the movable frame from both sides, a drive source, disposed on the drive beams, that causes the movable frame to be swung around a predetermined axis, a fixed frame supporting the drive beams. Each of the drive source includes a lower electrode formed on the drive beams, a piezoelectric thin film formed on the lower electrode, an upper electrode formed on the piezoelectric thin film, and a stress counter film, formed on the upper electrode or formed between the piezoelectric thin film and the upper electrode, that generates a compressive stress on the drive beams.
Abstract:
A haptic actuator device includes a surface with a mechanical property responsive to localized temperature changes. The surface can include a layer or sheet comprising a shape-memory material. The haptic actuator device can further include an actuator configured to selectively deform a plurality of regions in the sheet; and a temperature controller adapted to control the temperatures of the plurality of regions. A method of localized actuation includes selectively controlling the temperatures of the plurality of regions to be above a shape-memory transition temperature of the shape-memory material; selectively deforming at least one of the regions; while maintaining the deformation of the at least one region, lowering the temperature of the at least one region to below the shape-memory transition temperature; subsequently withdrawing the applied stress; and thereafter heating the at least one region to above the shape-memory transition temperature, causing the region to return to its pre-deformation shape.
Abstract:
A MEMS device (e.g. a piezoelectric actuator), and method of fabrication thereof, having a moveable portion comprising a layer of material (6) (e.g. a substrate layer formed from a substrate wafer) having relatively low rigidity in a direction in the plane of a surface of the layer of material (6), and relatively high rigidity in a direction through the plane; wherein the relatively low rigidity is provided by ridges and grooves (60) in a further surface of the layer of material (6), the further surface of the material (6) being substantially perpendicular to the direction in the plane. The MEMS device may comprise a layer of piezoelectric material (2) bonded to the surface of the layer of material (6). Actuation of the MEMS device (e.g. actuation in the plane of the surface of the layer of material (6)) may be performed by applying an electrical field across the piezoelectric material.