公开(公告)号：US07750544B2

公开(公告)日：2010-07-06

申请号：US11728935

申请日：2007-03-27

Applicant: Lap-Tak Andrew Cheng ,  David Herbert Roach

Inventor： Lap-Tak Andrew Cheng ,  David Herbert Roach

IPC: H01J1/304 ,  H01B1/00

CPC classification number: B82Y10/00 ,  H01J1/30 ,  H01J1/304 ,  H01J9/022 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/30469 ,  Y10S977/742 ,  Y10S977/745

Abstract: This invention provides compositions of matter that contain an electron emitting substance and an expansion material. The expansion material may, for example, be an intercalation compound. When a film is formed from the composition, expansion of the expansion material typically causes rupturing or fracturing of the film. No further treatment of the surface of the film is typically required after expansion of the expansion material to obtain good emission properties. A surface formed from such a fractured film acts as an efficient electron field emitter and thus is useful in vacuum microelectronic devices.

Abstract translation: 本发明提供了含有电子发射物质和膨胀材料的物质组合物。 膨胀材料可以是例如插层化合物。 当由组合物形成膜时，膨胀材料的膨胀通常导致膜的破裂或破裂。 在膨胀材料膨胀之后，通常不需要进一步处理膜的表面以获得良好的发射性能。 由这种断裂薄膜形成的表面起着有效的电子场发射体的作用，因此可用于真空微电子器件。

公开(公告)号：US20100052511A1

公开(公告)日：2010-03-04

申请号：US12514765

申请日：2007-11-15

Applicant: Till Keesmann

Inventor： Till Keesmann

IPC: H01J1/62

CPC classification number: H01J1/3044 ,  H01J29/04 ,  H01J2201/30446

Abstract: The invention relates to a field emission device comprising a cathode having an emission region (1) for electrons (2). The field emission device is embodied for generating technically useful electron currents at a voltage which is as low as possible, in such a way that the emission region (1) has an arrangement of a plurality of individually positioned or positionable atoms (4) or molecules.

Abstract translation: 本发明涉及一种场发射器件，其包括具有用于电子的发射区域（1）的阴极（2）。 该场致发射器件被实施用于以尽可能低的电压产生技术上有用的电子电流，使得发射区域（1）具有多个单独定位的或可定位的原子（4）或分子的排列 。

公开(公告)号：US20080169749A1

公开(公告)日：2008-07-17

申请号：US11865249

申请日：2007-10-01

Applicant: Yoon-Jin Kim ,  Dong-Sik Zang ,  Jae-Myung Kim ,  Hee-Sung Moon ,  Gabdullin Pavel Garifovich ,  Davydov Sergey Nikolayevich ,  Korablev Vadim Vasilyevich ,  Kravchik Alexander Efimovich ,  Sokolov Vasily Vasilyevich ,  Kukushkina Yulia Alexandrovna ,  Tereshchenko Gennady Fedorovich

Inventor： Yoon-Jin Kim ,  Dong-Sik Zang ,  Jae-Myung Kim ,  Hee-Sung Moon ,  Gabdullin Pavel Garifovich ,  Davydov Sergey Nikolayevich ,  Korablev Vadim Vasilyevich ,  Kravchik Alexander Efimovich ,  Sokolov Vasily Vasilyevich ,  Kukushkina Yulia Alexandrovna ,  Tereshchenko Gennady Fedorovich

IPC: H01J1/62 ,  C01B31/02

CPC classification number: H01J9/025 ,  C01B32/05 ,  H01J1/304 ,  H01J2201/30446

Abstract: Provided are carbide derived carbon prepared by thermochemically reacting carbide compounds and a halogen element containing gas and extracting all atoms of the carbide compounds except carbon atoms, wherein the intensity ratios of the graphite G band at 1590 cm−1 to the disordered-induced D band at 1350 cm−1 are in the range of 0.3 through 5 when the carbide derived carbon is analyzed using Raman peak analysis, wherein the BET surface area of the carbide derived carbon is 1000 m2/g or more, wherein a weak peak or wide single peak of the graphite (002) surface is seen at 2θ=25° when the carbide derived carbon is analyzed using X-ray diffractometry, and wherein the electron diffraction pattern of the carbide derived carbon is the halo pattern typical of amorphous carbon when the carbide derived carbon is analyzed using electron microscopy. The emitter has good uniformity and a long lifetime. An emitter can be prepared using a more inexpensive method than that used to manufacture conventional carbon nanotubes.

Abstract translation: 提供通过碳化物化合物和含卤素元素的热化学反应制备的碳化物衍生碳，并且提取除碳原子以外的碳化物的所有原子，其中1590cm -1处的石墨G带与无序诱导的D带的强度比 当使用拉曼峰分析分析碳化物衍生碳时，1350cm -1处于0.3〜5的范围，其中碳化物衍生碳的BET表面积为1000m 2 / g以上，其中弱峰或宽单 当使用X射线衍射法分析碳化物衍生碳时，在2θ= 25°处观察到石墨（002）表面的峰值，并且其中碳化物衍生的碳的电子衍射图案是当碳化物 使用电子显微镜分析衍生碳。 发射体均匀性好，使用寿命长。 可以使用比用于制造常规碳纳米管的方法更便宜的方法来制备发射体。

公开(公告)号：US07391144B2

公开(公告)日：2008-06-24

申请号：US10821266

申请日：2004-04-08

Applicant: Tae-Ill Yoon ,  Jong-Woon Moon ,  Sung-Hee Cho ,  Sung-Kee Kang ,  Hun-Young Kim ,  Hyun-Jung Lee

Inventor： Tae-Ill Yoon ,  Jong-Woon Moon ,  Sung-Hee Cho ,  Sung-Kee Kang ,  Hun-Young Kim ,  Hyun-Jung Lee

IPC: H01J1/304 ,  H01J1/14

CPC classification number: B82Y30/00 ,  B22F1/0007 ,  B22F1/025 ,  B22F9/24 ,  B82Y10/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30446

Abstract: A carbon-based composite particle for an electron emission source comprises a particle of a material selected from the group consisting of metals, oxides, and ceramic materials; and a carbon-based material such as a carbon nanotube which is partially embedded inside the particle and which partially protrudes from the surface of the particle.

Abstract translation: 用于电子发射源的碳基复合颗粒包括选自金属，氧化物和陶瓷材料的材料的颗粒; 以及碳粒子等碳基材料，其部分地嵌入在粒子的内部，并从粒子的表面部分地突出。

公开(公告)号：US20080096456A1

公开(公告)日：2008-04-24

申请号：US11955330

申请日：2007-12-12

Applicant: Tae-Ill Yoon ,  Jong-Woon Moon ,  Sung-Hee Cho ,  Sung-Kee Kang ,  Hun-Young Kim ,  Hyun-Jung Lee

Inventor： Tae-Ill Yoon ,  Jong-Woon Moon ,  Sung-Hee Cho ,  Sung-Kee Kang ,  Hun-Young Kim ,  Hyun-Jung Lee

IPC: H01J9/02

CPC classification number: B82Y30/00 ,  B22F1/0007 ,  B22F1/025 ,  B22F9/24 ,  B82Y10/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30446

Abstract: Disclosed is a carbon-based composite particle for an electron emission source comprising: a particle of a material selected from the group consisting of metals, oxides, and ceramic materials; and a carbon-based material such as a carbon nanotube which is partially buried inside of the particle and which partially protrudes from the surface of the particle.

Abstract translation: 公开了一种用于电子发射源的碳基复合颗粒，包括：选自金属，氧化物和陶瓷材料的材料的颗粒; 以及碳粒子等碳系材料，其部分地埋设在粒子的内部，并从粒子的表面部分地突出。

公开(公告)号：US20080030152A1

公开(公告)日：2008-02-07

申请号：US11665250

申请日：2005-12-21

Applicant: Shojiro Komatsu ,  Yusuke Moriyoshi ,  Katsuyuki Okada

Inventor： Shojiro Komatsu ,  Yusuke Moriyoshi ,  Katsuyuki Okada

IPC: H01J11/04 ,  C01B21/064 ,  H05H1/24 ,  C23C8/00

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/30446

Abstract: Based on designs concerning boron nitride thin-films each including boron nitride crystals in acute-ended shapes excellent in field electron emission properties, and designs of emitters adopting such thin-films, it is aimed at appropriately controlling a distribution state of such crystals to thereby provide an emitter having an excellent efficiency and thus requiring only a lower threshold electric field for electron emission. In a design of a boron nitride thin-film emitter comprising crystals that are each represented by a general formula BN, that each include sp3 bonded boron nitride, sp2 bonded boron nitride, or a mixture thereof, and that each exhibit an acute-ended shape excellent in field electron emission property; there is controlled an angle of a substrate relative to a reaction gas flow upon deposition of the emitter from a vapor phase, thereby controlling a distribution state of the crystals over a surface of the thin-film.

Abstract translation: 基于关于氮化硼薄膜的设计，每个氮化硼薄膜包括场致发射性能优异的急端形状的氮化硼晶体，以及采用这种薄膜的发射体的设计，旨在适当地控制这种晶体的分布状态 提供具有优异效率的发射极，因此仅需要较低的电子发射阈值电场。 在包含各自由通式BN表示的晶体的氮化硼薄膜发射体的设计中，每一个都包括结合氮化硼的sp 3+，sp 2+结合的硼 氮化物或其混合物，并且各自表现出场电子发射性优异的锐端形状; 当从气相沉积发射体时，控制衬底相对于反应气体流的角度，从而控制晶体在薄膜表面上的分布状态。

公开(公告)号：US07317277B2

公开(公告)日：2008-01-08

申请号：US10421107

申请日：2003-04-23

Applicant: Lap-Tak Andrew Cheng ,  David Herbert Roach

Inventor： Lap-Tak Andrew Cheng ,  David Herbert Roach

IPC: H01J1/30 ,  H01J1/304 ,  H01J9/00

CPC classification number: B82Y10/00 ,  H01J1/30 ,  H01J1/304 ,  H01J9/022 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/30469 ,  Y10S977/742 ,  Y10S977/745

Abstract: This invention provides compositions of matter that contain an electron emitting substance and an expansion material. The expansion material may, for example, be an intercalation compound. When a film is formed from the composition, expansion of the expansion material typically causes rupturing or fracturing of the film. No further treatment of the surface of the film is typically required after expansion of the expansion material to obtain good emission properties. A surface formed from such a fractured film acts as an efficient electron field emitter and thus is useful in vacuum microelectronic devices.

Abstract translation: 本发明提供了含有电子发射物质和膨胀材料的物质组合物。 膨胀材料可以是例如插层化合物。 当由组合物形成膜时，膨胀材料的膨胀通常导致膜的破裂或破裂。 在膨胀材料膨胀之后，通常不需要进一步处理膜的表面以获得良好的发射性能。 由这种断裂薄膜形成的表面起着有效的电子场发射体的作用，因此可用于真空微电子器件。

公开(公告)号：US20070215841A1

公开(公告)日：2007-09-20

申请号：US11596358

申请日：2005-05-13

Applicant: William Ford ,  Jurina Wessels ,  Akio Yasuda ,  Jack Barger

Inventor： William Ford ,  Jurina Wessels ,  Akio Yasuda ,  Jack Barger

IPC: C01B31/02 ,  B41M5/00

CPC classification number: H01M4/583 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/168 ,  C01B32/174 ,  C01B2202/02 ,  C01B2202/04 ,  C01B2202/06 ,  C01B2202/28 ,  H01G11/36 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/30469 ,  H01M4/624 ,  H01M4/96 ,  Y02E60/13 ,  Y10S977/742 ,  Y10S977/745 ,  Y10S977/746 ,  Y10S977/748 ,  Y10S977/778 ,  Y10S977/904 ,  Y10S977/906 ,  Y10S977/919 ,  Y10S977/931 ,  Y10S977/932 ,  Y10T428/24802 ,  Y10T428/30 ,  Y10T428/31504

Abstract: The invention relates to a carbon nanotube composite material, to methods of its production and to uses of such composite material.

Abstract translation: 本发明涉及碳纳米管复合材料，其生产方法和这种复合材料的使用。

公开(公告)号：US20070170832A1

公开(公告)日：2007-07-26

申请号：US11728935

申请日：2007-03-27

Applicant: Lap-Tak Cheng ,  David Roach

Inventor： Lap-Tak Cheng ,  David Roach

IPC: H01J1/00

CPC classification number: B82Y10/00 ,  H01J1/30 ,  H01J1/304 ,  H01J9/022 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/30469 ,  Y10S977/742 ,  Y10S977/745

Abstract: This invention provides compositions of matter that contain an electron emitting substance and an expansion material. The expansion material may, for example, be an intercalation compound. When a film is formed from the composition, expansion of the expansion material typically causes rupturing or fracturing of the film. No further treatment of the surface of the film is typically required after expansion of the expansion material to obtain good emission properties. A surface formed from such a fractured film acts as an efficient electron field emitter and thus is useful in vacuum microelectronic devices.

Abstract translation: 本发明提供了含有电子发射物质和膨胀材料的物质组合物。 膨胀材料可以是例如插层化合物。 当由组合物形成膜时，膨胀材料的膨胀通常导致膜的破裂或破裂。 在膨胀材料膨胀之后，通常不需要进一步处理膜的表面以获得良好的发射性能。 由这种断裂薄膜形成的表面起着有效的电子场发射体的作用，因此可用于真空微电子器件。

公开(公告)号：US20070151508A1

公开(公告)日：2007-07-05

申请号：US11311092

申请日：2005-12-19

Applicant: Yicheng Lu ,  Sriram Muthukumar ,  Nuri Emanetoglu

Inventor： Yicheng Lu ,  Sriram Muthukumar ,  Nuri Emanetoglu

IPC: C30B25/00 ,  C23C16/00 ,  C30B23/00 ,  C30B28/12

CPC classification number: B82Y30/00 ,  B82Y15/00 ,  C30B25/02 ,  C30B29/16 ,  C30B29/60 ,  H01J1/3044 ,  H01J9/025 ,  H01J2201/30446 ,  Y10S977/811 ,  Y10T428/24802 ,  Y10T428/24917

Abstract: In the present invention, there are provided self-assembled ZnO nanotips grown on relatively low temperatures on various substrates by metalorganic chemical vapor deposition (MOCVD). The ZnO nanotips are made at relatively low temperatures, giving ZnO a unique advantage over other wide bandgap semiconductors such as GaN and SiC. The nanotips have controlled uniform size, distribution and orientation. These ZnO nanotips are of single crystal quality, show n-type conductivity and have good optical properties. Selective growth of ZnO nanotips also has been realized on patterned (100) silicon on r-sapphire (SOS), and amorphous SiO2 on r-sapphire substrates. Self-assembled ZnO nanotips can also be selectively grown on patterned layers or islands made of a semiconductor, an insulator or a metal deposited on R-plane (01 12) Al2O3 substrates as long as the ZnO grows in a columnar structure along the c-axis [0001] of ZnO on these materials. Such self-assembled ZnO nanotips and nanotip arrays are promising for applications in field emission displays and electron emission sources, photonic bandgap devices, near-field microscopy, UV optoelectronics, and bio-chemical sensors.

Abstract translation: 在本发明中，提供了通过金属有机化学气相沉积（MOCVD）在各种基底上在较低温度下生长的自组装的ZnO纳米二极管。 ZnO纳米芯片在相对低的温度下制成，使ZnO比其他宽带隙半导体（如GaN和SiC）具有独特的优势。 纳米片具有均匀的尺寸，分布和取向。 这些ZnO纳米芯片具有单晶质量，显示n型导电性，并具有良好的光学性能。 ZnO纳米片的选择性生长也已经在r-蓝宝石（SOS）上的图案化（100）硅和r-蓝宝石衬底上的无定形SiO 2上实现。 自组装ZnO纳米技术也可以选择性地生长在由半导体，绝缘体或沉积在R平面上的金属（01 12）Al 2 / 只要ZnO沿着这些材料上的ZnO的c轴[0001]以柱状结构生长，就可以进行。 这种自组装的ZnO纳米片和纳米尖端阵列对于场发射显示器和电子发射源，光子带隙器件，近场显微镜，UV光电子学和生物化学传感器的应用是有希望的。