公开(公告)号：EP0518612A1

公开(公告)日：1992-12-16

申请号：EP92305272.4

申请日：1992-06-09

Applicant: MOTOROLA, INC.

Inventor： Jaskie, James E.

IPC: H01J31/12

CPC classification number: H01J31/127 ,  H01J2201/319

Abstract: A portable computer (50) having a projection display (10) using a plurality of cold cathode field emission devices (30) formed on a single substrate (12) in rows and columns to produce images which are projected through a lens system (52) onto a remote flat surface (54). Memory and switching devices (39, 40) are formed on the same substrate (12) so the display (10) can be simply connected to any portable electronic device (50) and the size of the device (50) is independent of the display (10).

Abstract translation: 一种具有投影显示器（10）的便携式计算机（50），所述投影显示器（10）使用在行和列中形成在单个基板（12）上的多个冷阴极场发射装置（30），以产生通过透镜系统（52）投影的图像， 到远程平面（54）上。 存储器和开关器件（39,40）形成在相同的衬底（12）上，使得显示器（10）可以简单地连接到任何便携式电子设备（50），并且设备（50）的尺寸独立于显示器 （10）。

公开(公告)号：EP0288616B1

公开(公告)日：1992-10-14

申请号：EP87303550.5

申请日：1987-04-22

Applicant: Christensen, Alton Owen

Inventor： Christensen, Alton Owen

IPC: H01J1/30

CPC classification number: H01J3/021 ,  H01J1/3042 ,  H01J2201/30403 ,  H01J2201/319

公开(公告)号：EP0503638A2

公开(公告)日：1992-09-16

申请号：EP92104303.0

申请日：1992-03-12

Applicant: SONY CORPORATION

Inventor： Watanabe, Hidetoshi ,  Ohoshi, Toshio

IPC: H01J1/30 ,  H01J9/02

CPC classification number: H01J3/022 ,  H01J2201/319

Abstract: The array of field emission cathodes of the type in which each element is made up of a substrate serving as a first electrode (1) comprises an insulating layer (2) in which a cavity (6) is formed, a cathode (9) formed in said cavity (6) and on the first electrode (1), and a second electrode (3) formed on the insulating layer (2). The second electrode (3) is coated with a protective metal layer (13) having good conductivity and corrosion resistance. The second electrode (3), i.e. the gate electrode is thus protected from oxidation and permits stable electron emission.
Also disclosed is an array of field emission cathodes in which each element is made up of a first electrode (11) to apply voltage to a plurality of cathodes (9), a resistance layer (12), an insulating layer (2), and a second electrode (3) which are formed on top of the other. A cavity (6) is formed in the second electrode (3), i.e. the gate electrode and the insulating layer (2), and a cathode (9) is placed in each cavity (6) and on the resistance layer (12), with the first electrode (11) having a void under the respective cathode (9). This structure prevents short circuits between the cathode (9) and the gate electrode (3), which contributes to high yields and long life.

Abstract translation: 其中每个元件由用作第一电极（1）的衬底构成的类型的场致发射阴极阵列包括其中形成空腔（6）的绝缘层（2），形成的阴极（9） 在所述空腔（6）和第一电极（1）上，以及形成在绝缘层（2）上的第二电极（3）。 第二电极（3）涂覆有具有良好导电性和耐腐蚀性的保护金属层（13）。 因此，第二电极（3）即栅电极被保护免受氧化并允许稳定的电子发射。 还公开了一种场发射阴极的阵列，其中每个元件由第一电极（11）构成，以向多个阴极（9），电阻层（12），绝缘层（2）施加电压，并且 第二电极（3），其形成在另一个的顶部。 在第二电极（3）中，即栅电极和绝缘层（2）上形成空腔（6），并且阴极（9）放置在每个空腔（6）和电阻层（12）上， 第一电极（11）在相应的阴极（9）下具有空隙。 这种结构防止阴极（9）和栅电极（3）之间的短路，这有助于高产量和长寿命。

公开(公告)号：EP0288616A1

公开(公告)日：1988-11-02

申请号：EP87303550.5

申请日：1987-04-22

Applicant: Christensen, Alton Owen

Inventor： Christensen, Alton Owen

IPC: H01J1/30

CPC classification number: H01J3/021 ,  H01J1/3042 ,  H01J2201/30403 ,  H01J2201/319

Abstract: A device is disclosed which produces high current, low noise, low lateral energy, stochastic electron emission from a multiplicity of insulative particles subjected to a field. The insulative particles are in and of a surface thickness comprised of a random mixture of insulative and conductive particles in ohmic contact. Emission is achieved at applied potentials of about 5 volts which produce a field sufficient to emit electron currents of nanoamperes to milliamperes. Single devices or arrays of devices may be batch fabricated. each device has an integral, implicitly self-aligned electron optic system comprising means for modulating, focusing and deflecting the formed current beam, and means shielding the device from ambient magnetic fields.

Abstract translation: 公开了一种产生高电流，低噪声，低横向能量的装置，其来自经受场的多个绝缘粒子的随机电子发射。 绝缘颗粒处于和由欧姆接触的绝缘和导电颗粒的无规混合物组成的表面厚度中。 在约5伏特的施加电位下实现发射，其产生足以发射纳米电流至毫安的电场。 单个器件或器件阵列可以批量制造。 每个器件具有整体的，隐式自对准的电子光学系统，其包括用于调制，聚焦和偏转形成的电流束的装置，以及屏蔽器件免受环境磁场的影响。

公开(公告)号：WO2007003826A3

公开(公告)日：2007-04-12

申请号：PCT/FR2006050489

申请日：2006-05-29

Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  GOISLARD DE MONSABERT THOMAS ,  DIJON JEAN

Inventor： GOISLARD DE MONSABERT THOMAS ,  DIJON JEAN

IPC: B82B3/00 ,  B21B1/00 ,  H01J1/304 ,  H01J9/02

CPC classification number: H01J9/025 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  D01F9/127 ,  H01J1/3048 ,  H01J31/127 ,  H01J2201/30469 ,  H01J2201/319 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/055

Abstract: The invention concerns a method for making nanostructures (104) on a support, characterized in that it includes the following steps: providing a support comprising, on one of its surfaces, a surface layer (101); covering the surface layer with a catalyst layer (102) structured in a pattern which causes areas of the surface layer covered by the catalyst and areas of the surface layer not covered by the catalyst layer to be visible; etching the thickness of the surface layer (101) in the zones not covered by the catalyst layer; selectively growing nanostructures (104) on the areas of the surface layer covered by the catalyst. The invention enables cathode structures having electrically independent nanostructures to be produced as well.

Abstract translation: 本发明涉及在载体上制备纳米结构（104）的方法，其特征在于它包括以下步骤：提供在其一个表面上包括表面层（101）的载体; 用催化剂层（102）覆盖所述表面层，所述催化剂层（102）以使所述催化剂覆盖的表面层的区域和未被所述催化剂层覆盖的表面层的区域可见的图案构造; 在未被催化剂层覆盖的区域中蚀刻表面层（101）的厚度; 在被催化剂覆盖的表面区域上选择性地生长纳米结构（104）。 本发明还能够制造具有电独立纳米结构的阴极结构。

公开(公告)号：WO2003017310A1

公开(公告)日：2003-02-27

申请号：PCT/US2002/025171

申请日：2002-08-08

Applicant: EXTREME DEVICES INCORPORATED

Inventor： WINDISCHMANN, Henry ,  SCHUELLER, Randolph, D. ,  ZOLLERS, Brian, G. ,  JAMISON, Keith, D. ,  PATTERSON, Donald, E.

IPC: H01J1/304

CPC classification number: H01J1/3042 ,  H01J2201/319

Abstract: An array of carbon-based emitters is provided having more uniform electron emission over the area of the array. This is made possible by a resistive layer that is present below each of the emission tips. Both organic and inorganic resistive layers may be grown under the emitting carbon-based material. A conductive backing layer is in contact with the resistive layer. Methods for making the improved array are provided. The methods include growth of carbon-based tips in a mold, removal of various films or portions of films by etching, and other techniques.

Abstract translation: 提供了在阵列的区域上具有更均匀的电子发射的碳基发射体的阵列。 这通过存在于每个发射尖端下面的电阻层成为可能。 有机和无机电阻层都可以在发射碳基材料下生长。 导电背衬层与电阻层接触。 提供了改进阵列的方法。 这些方法包括在模具中生长碳基尖端，通过蚀刻去除各种膜或部分膜以及其它技术。

公开(公告)号：WO2003005398A1

公开(公告)日：2003-01-16

申请号：PCT/EP2002/007247

申请日：2002-07-01

Applicant: ICT, INTEGRATED CIRCUIT TESTING GMBH ,  ADAMEC, Pavel ,  WINKLER, Dieter

Inventor： ADAMEC, Pavel ,  WINKLER, Dieter

IPC: H01J1/308

CPC classification number: H01J1/3044 ,  H01J2201/319

Abstract: The invention provides an electron beam device 1 comprising at least one field emission cathode 3 and at least one extracting electrode 5, whereby the field emission cathode 5 comprises a p-type semiconductor region 7 connected to an emitter tip 9 made of a semiconductor material, an n-type semiconductor region 11 forming a pn-diode junction 13 with the p-type semiconductor region 7, a first electric contact 15 on the p-type semiconductor region 7 and a second electric contact 17 on the n-type semiconductor region 11. The p-type semiconductor region 7 prevents the flux of free electrons to the emitter unless electrons are injected into the p-type semiconductor region 7 by the pn-diode junction 13. This way, the field emission cathode 3 can generate an electron beam where the electron beam current is controlled by the forward biasing second voltage V2 across the pn-diode junction. Such electron beam current has an improved current value stability. In addition the electron beam current does not have to be stabilized anymore by adjusting the voltage between emitter tip 9 and extracting electrode 5 which would interfere with the electric field of electron beam optics. The present invention further provides the field emission cathode as described above and an array of field emission cathodes. The invention further provides a method to generate at least one electron beam.

Abstract translation: 本发明提供了一种包括至少一个场发射阴极3和至少一个提取电极5的电子束装置1，由此场致发射阴极5包括连接到由半导体材料制成的发射极尖端9的p型半导体区域7， 与p型半导体区域7形成pn二极管结13的n型半导体区域11，p型半导体区域7上的第一电接触15和n型半导体区域11上的第二电接触17 p型半导体区域7防止自由电子束流到发射极，除非电子通过pn二极管结13注入到p型半导体区域7中。这样，场发射阴极3可以产生电子束 其中电子束电流通过pn二极管结的正向偏置第二电压V2来控制。 这种电子束电流具有改善的电流值稳定性。 此外，电子束电流不必通过调节发射极尖端9和提取电极5之间的电压来进一步稳定，这将影响电子束光学器件的电场。 本发明还提供如上所述的场致发射阴极和场发射阴极阵列。 本发明还提供了一种产生至少一个电子束的方法。

公开(公告)号：WO2002097776A2

公开(公告)日：2002-12-05

申请号：PCT/US2002/016821

申请日：2002-05-24

Applicant: ITW INC. ,  RODRIGUEZ, Ingemar, V. ,  BISCHOFF, William, P.

Inventor： RODRIGUEZ, Ingemar, V. ,  BISCHOFF, William, P.

IPC: G09G

CPC classification number: H01J29/86 ,  H01J9/241 ,  H01J29/90 ,  H01J29/92 ,  H01J2201/319 ,  H01J2329/0494 ,  H01J2329/8605 ,  H01J2329/90 ,  H01J2329/92

Abstract: An emission layer 3 of an FED device has emitters which are caused to emit electrons or not according to whether or not a voltage on a gate 12, that is to say on a gate line 20 and thus at a gate aperture 121 surrounding the point 13 of the emitter generates an electric field at the point which is sufficiently high for electrons to be emitted from the point. For the voltages of the emitters and the gates of the pixel are controlled. Emitter lines 18 are arranged at the front face 19 of the substrate 4 parallel to one edge of the display and gate lines 20 are arranged at the front face 21 of the emission layer 3, orthogonal to the emitter lines. The front face is covered by an interface lamina 1011 forming part of the emission layer 130. The lamina 101 is a single thickness of fired photo imageable glass.

Abstract translation: FED装置的发射层3具有根据栅极12上的电压（即，在栅极线20上，并且因此在围绕点13的栅极孔121）处是否发射电子的发射体 在从该点发射电子的足够高的点处产生电场。 对于像素的发射极和栅极的电压进行控制。 发射极线18布置在平行于显示器的一个边缘的基板4的正面19处，并且栅极线20被布置在与发射极线正交的发射层3的正面21处。 前表面由形成发射层130的一部分的界面层1011覆盖。薄片101是烧制的可光成像玻璃的单一厚度。

公开(公告)号：WO0225688A2

公开(公告)日：2002-03-28

申请号：PCT/US0129315

申请日：2001-09-19

Applicant: DISPLAY RES LAB INC

Inventor： HAVEN DUANE A ,  NAUGLER W EDWARD JR ,  KASANO KAZUHIKO

IPC: H01J9/02 ,  H01J29/02 ,  H01J31/00

CPC classification number: H01J29/02 ,  H01J9/025 ,  H01J2201/319 ,  H01J2329/00

Abstract: A field emission display which includes thin film resistors disposed between the electron-emitting elements of a cathode and a conductive support which provides electrical connection to said electron-emitting element through said thin film.

Abstract translation: 场致发射显示器，其包括设置在阴极的电子发射元件和通过所述薄膜提供与所述电子发射元件的电连接的导电支撑件之间的薄膜电阻器。

公开(公告)号：WO0215214A2

公开(公告)日：2002-02-21

申请号：PCT/GB0103591

申请日：2001-08-10

Applicant: ISIS INNOVATION ,  WILSHAW PETER RICHARD ,  HOLLAND EDWARD ROBERT ,  LI YAGANG

Inventor： WILSHAW PETER RICHARD ,  HOLLAND EDWARD ROBERT ,  LI YAGANG

IPC: H01C17/16 ,  H01J1/304 ,  H01J9/02

CPC classification number: H01C17/16 ,  H01J1/3044 ,  H01J2201/319

Abstract: A field emitter device is disclosed which comprises a layer of a non-conducting support material having thereon successive layers of an address electrode, a dielectric anodic metal oxide layer and, optionally, lastly, a grid electrode, the dielectric anodic metal oxide layer possessing an array of pores extending from the surface in contact with the grid electrode to the address electrode, said pores containing wires which extend from the address electrode to the surface of the anodic metal oxide layer in contact with the grid electrode, at least one section along the wires not in contact with the address electrode being formed of a resistive material.

Abstract translation: 公开了一种场致发射器件，其包括一层非导电支撑材料，其上具有寻址电极，电介质阳极金属氧化物层和任选地最后一个栅格电极的连续层，该电介质阳极金属氧化物层具有 从与栅格电极接触的表面延伸到寻址电极的孔的阵列，所述孔包含从寻址电极延伸到阳极金属氧化物层与栅电极接触的表面的电线，沿着 与地址电极不接触的电线由电阻材料形成。