플라즈마 내식성이 우수한 석영유리 및 그 제조방법
    181.
    发明公开
    플라즈마 내식성이 우수한 석영유리 및 그 제조방법 有权
    具有抗等离子体腐蚀性的QUARTZ玻璃及其制造方法

    公开(公告)号:KR1020060087405A

    公开(公告)日:2006-08-02

    申请号:KR1020057016843

    申请日:2005-06-09

    Abstract: A quartz glass that as a jig material for plasma reaction employed in the production of semiconductors, excels in plasma corrosion resistance, especially corrosion resistance to F based plasma gas, and that can be used without causing any abnormality of silicon wafer; a relevant quartz glass jig; and a process for producing them. There is provided a quartz glass comprising two or more types of metal elements in a total amount of 0.1 to 20 wt.%, wherein the metal elements are composed of a first metal element consisting of at least one member selected from among those of Group 3B of the periodic table and a second metal element consisting of at least one member selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids and actinoids, with the proviso that the maximum concentration of each of second metal elements is

    Abstract translation: 作为半导体制造中用于等离子体反应的夹具材料的石英玻璃,具有优异的等离子体耐腐蚀性,特别是对F系等离子体气体的耐腐蚀性,可以在不引起硅晶片异常的情况下使用; 相关石英玻璃夹具; 以及生产它们的过程。 提供总量为0.1〜20重量%的两种以上金属元素的石英玻璃,其中金属元素由选自第3B族中的至少一种的第一金属元素构成 和由选自Mg,Ca,Sr,Ba,Sc,Y,Ti,Zr,Hf,镧系元素和锕系元素中的至少一种构成的第二金属元素,条件是最大浓度 的每个第二金属元素<2.0重量%。

    A synthetic silica glass, especially for the cladding of an optical fiber and a manufacturing method for the synthetic silica glass
    186.
    发明公开
    A synthetic silica glass, especially for the cladding of an optical fiber and a manufacturing method for the synthetic silica glass 有权
    Synthetisches Silicaglas,insbesondere zurUmhüllungeiner optischen Faser

    公开(公告)号:EP2508491A1

    公开(公告)日:2012-10-10

    申请号:EP11161127.3

    申请日:2011-04-05

    Abstract: It is an object of the invention to provide a synthetic silica glass for a cladding of a core from a fiber laser. The refractive index should be low and there should be no foaming foreign substances. This object is achieved by a synthetic silica glass for an optical element, which contains paramagnetic E' defect centers in an amount that is sufficient to set the absorption coefficient at 215 nm is in the range between 0.001 cm -1 and 2 cm -1 ; it contains paramagnetic oxygen defect centers in an amount that is sufficient to set the absorption coefficient at 250 nm is in the range between 0.001 cm -1 and 2 cm -1 ; the OH group concentration is 5 wtppm or less; the viscosity at 1100°C is in the range between 1×10 13.5 poise and 1×10 15.5 ; the total content of metallic elements of Group 3 and Group 13 of the periodic table is 50.000 wtppm or less; and the relative refractive index difference of said synthetic silica glass is in the range between +0.03% to +3%, in relation to a synthetic fused silica glass with the absorption coefficient at 215 nm being less than 0.001 cm -1 , the absorption coefficient at 250 nm being less than 0.001 cm -1 , and the total concentration of the metallic elements contained being 1 wtppm or less, in the wavelength range of 600 nm or more and 1700 nm or less.(Selected Drawing: Fig. 1 )

    Abstract translation: 本发明的目的是提供一种用于来自光纤激光器的芯的包层的合成石英玻璃。 折射率应低,不会有发泡异物。 该目的通过用于光学元件的合成二氧化硅玻璃来实现,其含有足够使得在215nm处的吸收系数在0.001cm -1和2cm -1之间的范围内的顺磁性E'缺陷中心; 其含有顺磁氧缺陷中心的量足以使吸收系数在250nm处在0.001cm -1和2cm -1之间的范围内; OH基浓度为5重量ppm以下; 在1100℃下的粘度在1×10 13.5泊和1×10 15.5之间的范围内; 周期表第3族和第13族金属元素的总含量为50.000wtppm以下; 并且所述合成石英玻璃的相对折射率差在+ 0.03%至+ 3%之间的范围内,相对于215nm处的吸收系数小于0.001cm -1的合成石英玻璃,吸收系数 在250nm以下且小于0.001cm -1,并且在600nm以上且1700nm以下的波长范围内,所含金属元素的总浓度为1重量ppm以下(选择图:图1)

    QUARTZ GLASS MEMBER FOR PLASMA ETCHING
    187.
    发明公开
    QUARTZ GLASS MEMBER FOR PLASMA ETCHING 有权
    VERWENDUNG EINES QUARZGLASELEMENTSFÜRDASPLASMAÄTZEN

    公开(公告)号:EP2194030A1

    公开(公告)日:2010-06-09

    申请号:EP08791510.4

    申请日:2008-07-24

    Abstract: Provided is a doped quartz glass member for plasma etching, which is used in a plasma etching process and is free from any problematic fluoride accumulation during use. The quartz glass member for plasma etching is used as a jig for semiconductor production in a plasma etching process, and includes at least two or more kinds of metal elements in a total amount of 0.01 wt% or more to less than 0.1 wt%, in which the metal elements are formed of at least one kind of a first metal element selected from metal elements belonging to Group 3B of the periodic table and at least one kind of a second metal element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids.

    Abstract translation: 提供了用于等离子体蚀刻的掺杂石英玻璃构件,其用于等离子体蚀刻工艺中,并且在使用期间没有任何有问题的氟化物积聚。 用于等离子体蚀刻的石英玻璃构件用作等离子体蚀刻工艺中的半导体制造的夹具,并且包括总量为0.01重量%以上至小于0.1重量%的至少两种以上的金属元素, 金属元素由选自属于周期表第3B族的金属元素中的至少一种第一金属元素和选自Mg,Ca,Sr等的至少一种第二金属元素形成, Ba,Sc,Y,Ti,Zr,Hf,镧系元素和锕系元素。

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