Abstract:
A quartz glass that as a jig material for plasma reaction employed in the production of semiconductors, excels in plasma corrosion resistance, especially corrosion resistance to F based plasma gas, and that can be used without causing any abnormality of silicon wafer; a relevant quartz glass jig; and a process for producing them. There is provided a quartz glass comprising two or more types of metal elements in a total amount of 0.1 to 20 wt.%, wherein the metal elements are composed of a first metal element consisting of at least one member selected from among those of Group 3B of the periodic table and a second metal element consisting of at least one member selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids and actinoids, with the proviso that the maximum concentration of each of second metal elements is
Abstract:
본 발명의 희토류원소가 도우프된 석영계 유리는 희토류 원소와 Al에 더하여 불소가 도우프된 유리 조성으로 이루어지므로 실용적인 발광특성, 고증폭이득, 광대역화, 소자의 소형화, 석영계 유리 상호의 융착성 내지 융착접속성 등의 특성을 구비하고 있다. 특히, 본 발명의 희토류 원소가 도우프된 석영계 유리는 제조 프로세스 상에 있어서 이 종류의 도우프된 석영계 유리 특유의 결정화를 동반하지 않으므로 투명한 것은 물론 잔류 기포가 없다. 본 발명에 따른 희토류 원소가 도우프된 석영계 유리의 제조방법은 다공질 유리체의 형성 수단과 용액 함침법이 조합된 것이므로 능동적 광소자용으로서, 고순도이고 투명성이 구수하며 희토류원소와 Al이 함께 도우프된 희토류 원소가 도우프된 석영계 유리를 용이하게 제작할 수 있다.
Abstract:
Provided is a doped quartz glass member for plasma etching, which is used in a plasma etching process and is free from any problematic fluoride accumulation during use. The quartz glass member for plasma etching is used as a jig for semiconductor production in a plasma etching process, and includes at least two or more kinds of metal elements in a total amount of 0.01 wt% or more to less than 0.1 wt%, in which the metal elements are formed of at least one kind of a first metal element selected from metal elements belonging to Group 3B of the periodic table and at least one kind of a second metal element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids.
Abstract:
It is an object of the invention to provide a synthetic silica glass for a cladding of a core from a fiber laser. The refractive index should be low and there should be no foaming foreign substances. This object is achieved by a synthetic silica glass for an optical element, which contains paramagnetic E' defect centers in an amount that is sufficient to set the absorption coefficient at 215 nm is in the range between 0.001 cm -1 and 2 cm -1 ; it contains paramagnetic oxygen defect centers in an amount that is sufficient to set the absorption coefficient at 250 nm is in the range between 0.001 cm -1 and 2 cm -1 ; the OH group concentration is 5 wtppm or less; the viscosity at 1100°C is in the range between 1×10 13.5 poise and 1×10 15.5 ; the total content of metallic elements of Group 3 and Group 13 of the periodic table is 50.000 wtppm or less; and the relative refractive index difference of said synthetic silica glass is in the range between +0.03% to +3%, in relation to a synthetic fused silica glass with the absorption coefficient at 215 nm being less than 0.001 cm -1 , the absorption coefficient at 250 nm being less than 0.001 cm -1 , and the total concentration of the metallic elements contained being 1 wtppm or less, in the wavelength range of 600 nm or more and 1700 nm or less.(Selected Drawing: Fig. 1 )
Abstract:
Provided is a doped quartz glass member for plasma etching, which is used in a plasma etching process and is free from any problematic fluoride accumulation during use. The quartz glass member for plasma etching is used as a jig for semiconductor production in a plasma etching process, and includes at least two or more kinds of metal elements in a total amount of 0.01 wt% or more to less than 0.1 wt%, in which the metal elements are formed of at least one kind of a first metal element selected from metal elements belonging to Group 3B of the periodic table and at least one kind of a second metal element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids.
Abstract:
An amplifier optical fiber comprising a central core of a dielectric matrix doped with at least one element ensuring the amplification of an optical signal transmitted in the fiber and a cladding surrounding the central core and suitable for confining the optical signal transmitted in the core. The fiber also comprises metallic nanostructures suitable for generating an electronic surface resonance in the dielectric matrix of central core, the wavelength of said electronic surface resonance corresponding to an excitation level of the element ensuring the amplification. Such a fiber can constitute an amplifier fiber, a laser or an optical sensor.
Abstract:
An optical waveguide including a core having silica, Al, a non-fluorescent rare-earth ion, Ge, Er, and Tm. The non-fluorescent rare-earth ion may be La. Exemplary compositions concentrations are Er is from 15 ppm to 3000 ppm, Al is from 0.5 mol% to 12 mol%, La is less than or equal to 2 mol%, Tm is from 15 ppm to 10,000 ppm; and the Ge is less than or equal to 15 mol%. The core may further include F. An exemplary concentration of F is less than or equal to 6 anion mol%.
Abstract:
The electric incandescent lamp has a quartz glass lamp vessel (1) or envelope (4') around the lamp vessel, which has a red coloured dope in the area at the side of the incandescent body (3). The quartz glass with red dope contains samariumII oxide, aluminium oxide, titanium dioxide, and silicon dioxide, the analysis of the glass in its oxidized form being Sm¿2?O3 1 to 3 % by weight, Al2O3 up to 3 % by weight, TiO2, rest SiO2, the molar ratio Al/Sn being at least about 2 and the molar ratio Sm/Ti being from 2 to 8.