公开(公告)号：WO2007053376A3

公开(公告)日：2007-05-10

申请号：PCT/US2006/041514

申请日：2006-10-23

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION ,  LEVINSKI, Vladimir ,  ADEL, Michael, E. ,  FROMMER, Aviv ,  KANDEL, Daniel

Inventor： LEVINSKI, Vladimir ,  ADEL, Michael, E. ,  FROMMER, Aviv ,  KANDEL, Daniel

IPC: G06F17/50

Abstract: Methods and apparatus for fabricating a semiconductor die including several target structures. A first layer is formed that includes one or more line or trench structures that extend in a first direction (310). A second layer is formed that includes one or more line or trench structures that extend in a second direction that is perpendicular to the first structure, such that a projection of the target structure along the first direction is independent of the second direction and a projection of the target structure along the second direction is independent of the first direction (320). A target structure and a method for generating a calibration curve are also described.

公开(公告)号：WO2006094021A3

公开(公告)日：2007-01-11

申请号：PCT/US2006007195

申请日：2006-02-28

Applicant: KLA TENCOR TECH CORP ,  FROMMER AVIV ,  LEVINSKI VLADIMIR ,  SMITH MARK D ,  BYERS JEFFREY ,  MACK CHRIS A ,  ADEL MICHAEL E

Inventor： FROMMER AVIV ,  LEVINSKI VLADIMIR ,  SMITH MARK D ,  BYERS JEFFREY ,  MACK CHRIS A ,  ADEL MICHAEL E

IPC: G01B11/00

CPC classification number: G03F9/7049 ,  G03F7/70633 ,  G03F9/7088

Abstract: A system for imaging an acquisition target or an overlay or alignment semiconductor target (404) is disclosed. The system includes a beam generator for directing at least one incident beam (402) having a wavelength lamda towards a periodic target (404) having structures with a specific pitch p. A plurality of output beams (406) are scattered from the periodic target (404) in response to the at least one incident beam (402). The system further includes an imaging lens system (410) for passing only a first and second output beam (412a, 412b) from the target (404). The imaging system is adapted such that the angular separation between the captured beams, lamda, and the pitch are selected to cause the first and second output beams (412a, 412b) to form a sinusoidal image (414). The system also includes a sensor for imaging the sinusoidal image or images (414), and a controller for causing the beam generator to direct the at least one incident beam (402) towards the periodic target or targets (404), and for analyzing the sinusoidal image or images (414).

Abstract translation: 公开了一种用于对采集目标或覆盖或对准半导体目标进行成像的系统（404）。 该系统包括用于将具有波长兰达的至少一个入射光束（402）朝向具有特定间距p的结构的周期性靶（404）引导的光束发生器。 响应于至少一个入射光束（402），多个输出光束（406）从周期性靶标（404）散射。 该系统还包括用于仅使来自目标物（404）的第一和第二输出光束（412a，412b）通过的成像透镜系统（410）。 成像系统被适配成使得捕获的光束，兰达和间距之间的角度间隔被选择以使得第一和第二输出光束（412a，412b）形成正弦图像（414）。 该系统还包括用于对正弦图像或图像进行成像的传感器（414），以及控制器，用于使光束发生器将至少一个入射光束（402）引向周期性目标（404），并且用于分析 正弦图像或图像（414）。

公开(公告)号：WO1996004534A1

公开(公告)日：1996-02-15

申请号：PCT/US1995008521

申请日：1995-07-12

Applicant: C.I. SYSTEMS LTD. ,  CABIB, Dario ,  BUCKWALD, Robert, A. ,  ADEL, Michael, E.

Inventor： C.I. SYSTEMS LTD.

IPC: G01J05/06

CPC classification number: G01J5/0003

Abstract: An emissivity compensating non-contact system for measuring the temperature of a semiconductor wafer (24). The system includes a semiconductor wafer emissivity compensation station (10) for measuring the reflectivity of the wafer (24) at discrete wavelengths to yield wafer emissivity in specific wavelength bands. The system further includes a measurement probe (13) which is optically coupled to a semiconductor process chamber (12). The probe (13) senses wafer self-emission using one or more optical detectors (40) and a light modulator (42). A background temperature determining mechanism (44) independently senses the temperature of a source (46) of background radiation. Finally, a mechanism (16) calculates the temperature of the semiconductor wafer based on reflectivity and self-emission of the wafer and background temperature.

Abstract translation: 一种用于测量半导体晶片（24）的温度的发射率补偿非接触系统。 该系统包括半导体晶片发射率补偿站（10），用于以离散波长测量晶片（24）的反射率，以产生特定波长带中的晶片辐射率。 该系统还包括光学耦合到半导体处理室（12）的测量探头（13）。 探头（13）使用一个或多个光学检测器（40）和光调制器（42）感测晶片自发射。 背景温度确定机构（44）独立地感测背景辐射源（46）的温度。 最后，机构（16）基于晶片的反射率和自发射以及背景温度来计算半导体晶片的温度。

公开(公告)号：WO2009143200A3

公开(公告)日：2010-03-04

申请号：PCT/US2009044594

申请日：2009-05-20

Applicant: KLA TENCOR CORP ,  IZIKSON PAVEL ,  ADEL MICHAEL E ,  KANDEL DANIEL

Inventor： IZIKSON PAVEL ,  ADEL MICHAEL E ,  KANDEL DANIEL

IPC: H01L21/66

CPC classification number: G03F7/70641 ,  G05B19/41845 ,  G05B2219/32187 ,  G05B2219/36307 ,  H01L22/20 ,  Y02P90/16 ,  Y02P90/22

Abstract: A method of characterizing a process by selecting the process to characterize, selecting a parameter of the process to characterize, determining values of the parameter to use in a test matrix, specifying an eccentricity for the test matrix, selecting test structures to be created in cells on a substrate, processing the substrate through the process using in each cell the value of the parameter as determined by the eccentric test matrix, measuring a property of the test structures in the cells, and developing a correlation between the parameter and the property.

Abstract translation: 一种通过选择表征过程来表征过程的方法，选择过程的参数来表征，确定在测试矩阵中使用的参数的值，指定测试矩阵的偏心度，选择要在单元格中创建的测试结构 在基板上，通过在每个单元中使用由偏心测试矩阵确定的参数值来处理基板，测量单元中的测试结构的性质，以及发展参数与特性之间的相关性。

公开(公告)号：WO2010011560A3

公开(公告)日：2010-01-28

申请号：PCT/US2009/050834

申请日：2009-07-16

Applicant: KLA-TENCOR CORPORATION ,  ADEL, Michael, E. ,  POSLAVSKY, Leonid ,  FIELDEN, John ,  MADSEN, Jonathan, Michael ,  PETERS, Robert

Inventor： ADEL, Michael, E. ,  POSLAVSKY, Leonid ,  FIELDEN, John ,  MADSEN, Jonathan, Michael ,  PETERS, Robert

IPC: H01L21/66

Abstract: Metrology may be implemented during semiconductor device fabrication by a) modeling a first measurement on a first test cell formed in a layer of a partially fabricated device; b) performing a second measurement on a second test cell in the layer; c) feeding information from the second measurement into the modeling of the first measurement; and after a lithography pattern has been formed on the layer including the first and second test cells, d) modeling a third and a fourth measurement on the first and second test cells respectively using information from a) and b) respectively.

公开(公告)号：WO2006094021A2

公开(公告)日：2006-09-08

申请号：PCT/US2006/007195

申请日：2006-02-28

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION ,  FROMMER, Aviv ,  LEVINSKI, Vladimir ,  SMITH, Mark, D. ,  BYERS, Jeffrey ,  MACK, Chris, A. ,  ADEL, Michael, E.

Inventor： FROMMER, Aviv ,  LEVINSKI, Vladimir ,  SMITH, Mark, D. ,  BYERS, Jeffrey ,  MACK, Chris, A. ,  ADEL, Michael, E.

CPC classification number: G03F9/7049 ,  G03F7/70633 ,  G03F9/7088

Abstract: In one embodiment, a system for imaging an acquisition target or an overlay or alignment semiconductor target is disclosed. The system includes a beam generator for directing at least one incident beam having a wavelength l towards a periodic target having structures with a specific pitch p. A plurality of output beams are scattered from the periodic target in response to the at least one incident beam. The system further includes an imaging lens system for passing only a first and a second output beam from the target. The imaging system is adapted such that the angular separation between the captured beams, l, and the pitch are selected to cause the first and second output beams to form a sinusoidal image. The system also includes a sensor for imaging the sinusoidal image or images, and a controller for causing the beam generator to direct the at least one incident beam towards the periodic target or targets, and for analyzing the sinusoidal image or images. In one application the detector detects a sinusoidal image of an acquisition target with the same pitch as the designed target and the controller analyzes the pitch of the sinusoidal image compared to design data to determine whether the target has been successfully acquired. In a second application a first and second periodic target that each have a specific pitch p are imaged so that the detector detects a first sinusoidal image of the first target and a second sinusoidal image of the second target and the controller analyzes the first and second sinusoidal image to determine whether the first and second targets have an overlay or alignment error.

Abstract translation: 在一个实施例中，公开了一种用于对采集目标或覆盖或对准半导体目标进行成像的系统。 该系统包括用于将具有波长l的至少一个入射光束引向具有特定间距p的结构的周期性目标的光束发生器。 响应于至少一个入射光束，多个输出光束从周期性靶标散射。 该系统还包括用于仅从目标通过第一和第二输出光束的成像透镜系统。 成像系统被适配成使得捕获的光束1和间距之间的角度间隔被选择为使得第一和第二输出光束形成正弦图像。 该系统还包括用于对正弦图像或图像进行成像的传感器，以及控制器，用于使光束发生器将至少一个入射光束引向周期性目标或目标，并用于分析正弦图像或图像。 在一个应用中，检测器以与设计目标相同的间距检测采集目标的正弦图像，并且控制器分析与设计数据相比的正弦图像的间距，以确定目标是否已被成功获取。 在第二应用中，每个具有特定间距p的第一和第二周期性目标成像，使得检测器检测第一目标的第一正弦图像和第二目标的第二正弦图像，并且控制器分析第一和第二正弦曲线 图像以确定第一和第二目标是否具有覆盖或对齐错误。

公开(公告)号：WO1996003615A1

公开(公告)日：1996-02-08

申请号：PCT/US1995008708

申请日：1995-07-12

Applicant: C.I. SYSTEMS (ISRAEL) LTD. ,  CABIB, Dario ,  BUCKWALD, Robert, A. ,  ADEL, Michael, E.

Inventor： C.I. SYSTEMS (ISRAEL) LTD.

IPC: G01B09/02

CPC classification number: G01B11/0675 ,  G01J3/26 ,  G01J2003/2866

Abstract: A method of determining the thickness map of a film (14) overlying a substrate (14). This method includes illuminating (10) the film simultaneously from different angles and analyzing spectral intensity of the radiation reflected by each point on the film (14). The analysis is effected by collecting reflected radiation from the film (14), passing the radiation through an interferometer (16) which outputs modulated radiation corresponding to a predetermined set of linear combinations of the spectral intensity of the radiation emitted from each pixel, simultaneously and separately scanning optical path differences generated in the interferometer (16) for each pixel, focusing the radiation outputted from the interferometer (16) on a detector array, and processing the output of the detector array to determine the spectral intensity of each pixel thereof to obtain a spectral intensity distribution. Finally, the method includes further processing the spectral intensity distribution to determine the spatial distribution of the thickness of the film (16).

Abstract translation: 一种确定覆盖衬底（14）的膜（14）的厚度图的方法。 该方法包括从不同角度同时照射（10）胶片并分析由胶片（14）上的每个点反射的辐射的光谱强度。 分析是通过收集来自胶片（14）的反射辐射，使辐射通过干涉仪（16），干涉仪（16）同时输出对应于从每个像素发射的辐射的光谱强度的预定的一组线性组合的调制辐射， 分别扫描针对每个像素的干涉仪（16）中产生的光程差，将从干涉仪（16）输出的辐射聚焦在检测器阵列上，并且处理检测器阵列的输出以确定其每个像素获得的光谱强度 光谱强度分布。 最后，该方法包括进一步处理光谱强度分布以确定薄膜（16）的厚度的空间分布。

公开(公告)号：WO2010080732A2

公开(公告)日：2010-07-15

申请号：PCT/US2010/020046

申请日：2010-01-04

Applicant: KLA-TENCOR CORPORATION ,  ADEL, Michael E. ,  MANASSEN, Amnon ,  KANDEL, Daniel

Inventor： ADEL, Michael E. ,  MANASSEN, Amnon ,  KANDEL, Daniel

IPC: H01L21/66

CPC classification number: G03F7/70683 ,  G03F7/705 ,  G03F7/70633 ,  H01L22/12

Abstract: A metrology target design may be optimized using inputs including metrology target design information, substrate information, process information, and metrology system information. Acquisition of a metrology signal with a metrology system may be modeled using the inputs to generate one or more optical characteristics of the metrology target. A metrology algorithm may be applied to the characteristics to determine a predicted accuracy and precision of measurements of the metrology target made by the metrology system. Part of the information relating to the metrology target design may be modified and the signal modeling and metrology algorithm may be repeated to optimize the accuracy and precision of the one or more measurements. The metrology target design may be displayed or stored after the accuracy and precision are optimized.

Abstract translation: 可以使用包括计量目标设计信息，底物信息，过程信息和计量系统信息的输入来优化计量目标设计。 采用计量系统获取计量信号可以使用输入来建模，以产生计量目标的一个或多个光学特性。 可以将计量学算法应用于特征以确定由计量系统制定的度量目标的预测精度和测量精度。 可以修改与度量目标设计有关的部分信息，并且可以重复信号建模和计量学算法以优化一个或多个测量的精度和精度。 可以在精度和精度优化后显示或存储度量目标设计。

公开(公告)号：WO2005079498A2

公开(公告)日：2005-09-01

申请号：PCT/US2005/005253

申请日：2005-02-17

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION ,  ADEL, Michael, E. ,  SELIGSON, Joel, L. ,  KANDEL, Daniel

Inventor： ADEL, Michael, E. ,  SELIGSON, Joel, L. ,  KANDEL, Daniel

IPC: G01B11/00 ,  G03F7/00 ,  G03F7/20 ,  H01L21/66

CPC classification number: G03F7/70683 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/70633 ,  H01L22/12

Abstract: The present invention relates to overlay marks and methods for determining overlay error. One aspect of the present invention relates to a continuously varying offset mark. The continuously varying offset mark is a single mark that includes over laid periodic structures, which have offsets that vary as a function of position. By way of example, the periodic structures may correspond to gratings with different values of a grating characteristic such as pitch. Another aspect of the present invention relates to methods for determining overlay error from the continuously varying offset mark. The method generally includes determining the center of symmetry of the continuously varying offset mark and comparing it to the geometric center of the mark. If there is zero overlay, the center of symmetry tends to coincide with the geometric center of the mark. If overlay is non zero (e.g., misalignment between two layers), the center of symmetry is displaced from the geometric center of the mark. The displacement in conjunction with the preset gain of the continuously varying offset mark is used to calculate the overlay error.

Abstract translation: 本发明涉及覆盖标记和确定覆盖误差的方法。 本发明的一个方面涉及连续变化的偏移标记。 连续变化的偏移标记是包括过度周期性结构的单个标记，其具有作为位置的函数而变化的偏移。 作为示例，周期性结构可以对应于具有诸如间距的光栅特性的不同值的光栅。 本发明的另一方面涉及用于从连续变化的偏移标记确定覆盖误差的方法。 该方法通常包括确定连续变化的偏移标记的对称中心并将其与标记的几何中心进行比较。 如果有零覆盖，则对称中心倾向于与标记的几何中心重合。 如果覆盖层不为零（例如，两层之间的未对准），则对称中心从标记的几何中心位移。 使用与连续变化的偏移标记的预设增益相结合的位移来计算重叠误差。