公开(公告)号：WO2009046100A1

公开(公告)日：2009-04-09

申请号：PCT/US2008/078441

申请日：2008-10-01

Applicant: MARCHON EYEWEAR, INC. ,  AGNOLI, Giancarla ,  DA RE, Alberto ,  CALLEGARI, Alessandro

Inventor： AGNOLI, Giancarla ,  DA RE, Alberto ,  CALLEGARI, Alessandro

IPC: G02C11/00

CPC classification number: G02C5/146 ,  G02C11/10 ,  G02C2200/08

Abstract: An eyewear assembly having a frame and a separable temple piece in which a digital memory device is at least partially held within a temple piece.

Abstract translation: 一种具有框架和可分离的镜腿件的眼镜组件，其中数字存储装置至少部分地保持在镜腿片内。

公开(公告)号：WO2006022856A3

公开(公告)日：2007-01-11

申请号：PCT/US2005009112

申请日：2005-03-17

Applicant: IBM ,  CALLEGARI ALESSANDRO C ,  COHEN STEPHAN A ,  DOANY FUAD E

Inventor： CALLEGARI ALESSANDRO C ,  COHEN STEPHAN A ,  DOANY FUAD E

IPC: H01L21/26 ,  H01L21/324 ,  H01L21/42 ,  H01L21/477

CPC classification number: H01L21/76801 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02354 ,  H01L21/268 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  Y10T428/249978

Abstract: A method of fabricating a dielectric film comprising atoms of Si, C, O and H (hereinafter SiCOH) that has improved insulating properties as compared with prior art dielectric films, including prior art SiCOH dielectric films that are not subjected to the inventive deep ultra-violet (DUV) is disclosed. The improved properties include reduced current leakage which is achieved without adversely affecting (increasing) the dielectric constant of the SiCOH dieletric film. In accordance with the present invention, a SiCOH dielectric film exhibiting reduced current leakage and improved reliability is obtained by subjecting an as deposited SiCOH dielectric film to a DUV laser anneal. The DUV laser anneal step of the present invention likely removes the weakly bonded C from the film, thus improving leakage current.

Abstract translation: 与现有技术的电介质膜相比，包括具有改进的绝缘性能的Si，C，O和H原子（以下称为SiCOH）的电介质膜的制造方法，包括不经受本发明的深层超导体的现有技术的SiCOH介电膜， 紫色（DUV）。 改进的性能包括减少的电流泄漏，其在不影响（增加）SiCOH薄膜的介电常数的情况下实现。 根据本发明，通过使沉积的SiCOH电介质膜进行DUV激光退火，获得了表现出减小的电流泄漏和改进的可靠性的SiCOH电介质膜。 本发明的DUV激光退火工序可能从膜中除去弱结合的C，从而提高漏电流。

公开(公告)号：WO2006022856A2

公开(公告)日：2006-03-02

申请号：PCT/US2005/009112

申请日：2005-03-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  CALLEGARI, Alessandro, C. ,  COHEN, Stephan, A. ,  DOANY, Fuad, E.

Inventor： CALLEGARI, Alessandro, C. ,  COHEN, Stephan, A. ,  DOANY, Fuad, E.

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/26 ,  H01L21/324 ,  H01L21/42 ,  H01L21/477

CPC classification number: H01L21/76801 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02354 ,  H01L21/268 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  Y10T428/249978

Abstract: A method of fabricating a dielectric film comprising atoms of Si, C, O and H (hereinafter SiCOH) that has improved insulating properties as compared with prior art dielectric films, including prior art SiCOH dielectric films that are not subjected to the inventive deep ultra-violet (DUV) is disclosed. The improved properties include reduced current leakage which is achieved without adversely affecting (increasing) the dielectric constant of the SiCOH dieletric film. In accordance with the present invention, a SiCOH dielectric film exhibiting reduced current leakage and improved reliability is obtained by subjecting an as deposited SiCOH dielectric film to a DUV laser anneal. The DUV laser anneal step of the present invention likely removes the weakly bonded C from the film, thus improving leakage current.

Abstract translation: 与现有技术的电介质膜相比，包括具有改进的绝缘性能的Si，C，O和H原子（以下称为SiCOH）的电介质膜的制造方法，包括不经受本发明的深层超导体的现有技术的SiCOH介电膜， 紫色（DUV）。 改进的性能包括减少的电流泄漏，其在不影响（增加）SiCOH薄膜的介电常数的情况下实现。 根据本发明，通过使沉积的SiCOH电介质膜进行DUV激光退火，获得了表现出减小的电流泄漏和改进的可靠性的SiCOH电介质膜。 本发明的DUV激光退火工序可能从膜中除去弱结合的C，从而提高漏电流。

公开(公告)号：WO2005029568A2

公开(公告)日：2005-03-31

申请号：PCT/US2004026811

申请日：2004-08-19

Applicant: TOKYO ELECTRON LTD ,  IBM ,  O'MEARA DAVID L ,  WAJDA CORY ,  TAKAHASHI TSUYOSHI ,  CALLEGARI ALESSANDRO ,  SCHEER KRISTEN ,  ZAFAR SUFI ,  JAMISON PAUL

Inventor： O'MEARA DAVID L ,  WAJDA CORY ,  TAKAHASHI TSUYOSHI ,  CALLEGARI ALESSANDRO ,  SCHEER KRISTEN ,  ZAFAR SUFI ,  JAMISON PAUL

IPC: H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  C23C16/34 ,  H01L21/00 ,  H01L21/66

CPC classification number: H01L21/28185 ,  H01L21/02181 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31658 ,  H01L21/31662 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: A method is provided for forming a microstructure with an interfacial oxide layer by using a diffusion filter layer to control the oxidation properties of a substrate associated with formation of a high-k layer into the microstructure. The diffusion filter layer controls the oxidation of the surface. The interfacial oxide layer can be formed during an oxidation process that is carried out following deposition of a high­k layer onto the diffusion filter layer, or during deposition of a high-k layer onto the diffusion filter layer.

Abstract translation: 提供了一种用于通过使用扩散过滤层来形成具有界面氧化物层的微观结构以控制与形成高k层的微结构相关联的衬底的氧化性能的方法。 扩散过滤层控制表面的氧化。 可以在氧化过程中形成界面氧化物层，该氧化工艺是在将highk层沉积到扩散过滤层上之后，或者在将高k层沉积到扩散过滤层上时进行的。