公开(公告)号：WO2006044722A3

公开(公告)日：2006-06-29

申请号：PCT/US2005037125

申请日：2005-10-12

Applicant: LAM RES CORP ,  HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III

Inventor： HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III

IPC: G06F19/00 ,  H01J7/24 ,  H01J37/32 ,  H03H7/40

CPC classification number: H01J37/32082 ,  H01J37/32183 ,  H01J37/3299 ,  H03H7/40 ,  H05H1/46

Abstract: Methods for improving the stability of RF power delivery to a plasma load are disclosed (806). The method includes adding an RF impedance resistor and or a RF power attenuator at one of specific locations in the RF power system to lower the impedance derivatives while keeping the impedance marching circuit in tune with the RF transmission line impedance (804).

Abstract translation: 公开了用于提高RF功率输送到等离子体负载的稳定性的方法（806）。 该方法包括在RF功率系统的特定位置之一处添加RF阻抗电阻器和RF功率衰减器，以降低阻抗导数，同时保持阻抗行进电路与RF传输线路阻抗匹配（804）。

公开(公告)号：WO2006004744A3

公开(公告)日：2006-06-08

申请号：PCT/US2005022914

申请日：2005-06-28

Applicant: LAM RES CORP ,  HOWALD ARTHUR M

Inventor： HOWALD ARTHUR M

IPC: H02H1/00 ,  H01L21/683

CPC classification number: H01L21/6833 ,  H01J37/32082 ,  H02N13/00 ,  Y10T279/23 ,  Y10T307/858

Abstract: A method for removing a substrate that is attached to a bipolar electrostatic chuck (ESC) by application of a bipolar ESC voltage is provided which includes discontinuing the bipolar ESC voltage after processing a current substrate, and determining a monopolar component error of the processing. The method also includes correcting the monopolar component error for a subsequent substrate.

Abstract translation: 提供了一种通过施加双极性ESC电压来除去附着在双极静电卡盘（ESC）上的基板的方法，该方法包括在处理当前基板之后停止双极性ESC电压，并确定处理的单极分量误差。 该方法还包括校正后续衬底的单极分量误差。

公开(公告)号：WO2006044722A2

公开(公告)日：2006-04-27

申请号：PCT/US2005/037125

申请日：2005-10-12

Applicant: LAM RESEARCH CORPORATION ,  HOWALD, Arthur, M ,  KUTHI, Andras ,  BAILEY, Andrew, D, III

Inventor： HOWALD, Arthur, M ,  KUTHI, Andras ,  BAILEY, Andrew, D, III

IPC: G09G3/16 ,  C23F1/00 ,  B44C1/22 ,  H01J7/24

CPC classification number: H01J37/32082 ,  H01J37/32183 ,  H01J37/3299 ,  H03H7/40 ,  H05H1/46

Abstract: Methods for improving the stability of RF power delivery to a plasma load are disclosed. The method includes adding an RF resistor and/or a power attenuator at one of many specific locations in the RF power system to lower the impedance derivatives while keeping the matching circuit substantially in tune with the RF transmission line.

Abstract translation: 公开了用于提高RF功率输送到等离子体负载的稳定性的方法。 该方法包括在RF功率系统的许多特定位置之一处添加RF电阻器和/或功率衰减器，以降低阻抗导数，同时保持匹配电路与RF传输线基本一致。

公开(公告)号：WO2005094244A3

公开(公告)日：2006-03-30

申请号：PCT/US2004043911

申请日：2004-12-30

Applicant: LAM RES CORP ,  BAILEY ANDREW D III ,  LOHOKARE SHRIKANT P ,  HOWALD ARTHUR M ,  KIM YUNSANG

Inventor： BAILEY ANDREW D III ,  LOHOKARE SHRIKANT P ,  HOWALD ARTHUR M ,  KIM YUNSANG

IPC: B08B6/00 ,  B08B9/00 ,  B44C1/22 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/24 ,  H01L29/40 ,  H01L33/00

CPC classification number: B08B7/00 ,  B08B7/0035 ,  B08B7/0071 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32862 ,  H01J2237/022 ,  H01L21/3065 ,  H01L21/32115 ,  H01L21/32136 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/6708 ,  H01L21/7684 ,  Y10S438/905

Abstract: A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.

Abstract translation: 一种用于清洁处理室的方法，包括将处理室的内表面加热至第一温度。 第一个温度足以使第一个物质变得挥发。 第一种可以是沉积在内表面上的几种物质之一。 将清洁化学品注入到处理室中。 清洁化学品可以与第二种物质反应以将第二种类转化为第一种。 挥发的第一种也可以从处理室输出。 还描述了用于清洁处理室的系统。

公开(公告)号：WO2009045864A3

公开(公告)日：2009-05-22

申请号：PCT/US2008077764

申请日：2008-09-26

Applicant: LAM RES CORP ,  DORDI YEZDI N ,  HOWALD ARTHUR M

Inventor： DORDI YEZDI N ,  HOWALD ARTHUR M

IPC: H01L21/302

CPC classification number: H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76883

Abstract: An integrated process for forming metallization layers for electronic devices that use damascene structures that include low-k dielectric and metal. According to one embodiment of the present invention, the integrated process includes planarizing a gapfill metal in low-k dielectric structures, generating a protective layer on the low-k dielectric followed by cleaning the surface of the gapfill metal. Another embodiment of the present invention includes a method of protecting low-k dielectrics such as carbon doped silicon oxide.

Abstract translation: 一种用于形成使用包括低k电介质和金属的镶嵌结构的电子器件的金属化层的集成方法。 根据本发明的一个实施例，集成工艺包括平面化低k电介质结构中的间隙填充金属，在低k电介质上产生保护层，然后清洁间隙填充金属的表面。 本发明的另一个实施方案包括保护低k电介质如碳掺杂氧化硅的方法。

公开(公告)号：WO2009045864A2

公开(公告)日：2009-04-09

申请号：PCT/US2008/077764

申请日：2008-09-26

Applicant: LAM RESEARCH CORPORATION ,  DORDI, Yezdi N. ,  HOWALD, Arthur M.

Inventor： DORDI, Yezdi N. ,  HOWALD, Arthur M.

IPC: H01L21/302

CPC classification number: H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76883

Abstract: An integrated process for forming metallization layers for electronic devices that use damascene structures that include low-k dielectric and metal. According to one embodiment of the present invention, the integrated process includes planarizing a gapfill metal in low-k dielectric structures, generating a protective layer on the low-k dielectric followed by cleaning the surface of the gapfill metal. Another embodiment of the present invention includes a method of protecting low-k dielectrics such as carbon doped silicon oxide.

Abstract translation: 用于形成使用包括低k电介质和金属的镶嵌结构的电子器件的金属化层的集成工艺。 根据本发明的一个实施例，集成工艺包括平坦化低k电介质结构中的间隙填充金属，在低k电介质上生成保护层，接着清洁间隙填充金属的表面。 本发明的另一个实施例包括保护诸如碳掺杂氧化硅之类的低k电介质的方法。

公开(公告)号：WO2008027386A3

公开(公告)日：2008-08-21

申请号：PCT/US2007018924

申请日：2007-08-28

Applicant: LAM RES CORP ,  BOYD JOHN ,  DORDI YEZDI ,  ARUNAGIRI TIRUCHIRAPALLI ,  MOORING BENJAMIN W ,  PARKS JOHN ,  THIE WILLIAM ,  REDEKER FRITZ C ,  HOWALD ARTHUR M ,  SCHOEPP ALAN ,  HEMKER DAVID

Inventor： BOYD JOHN ,  DORDI YEZDI ,  ARUNAGIRI TIRUCHIRAPALLI ,  MOORING BENJAMIN W ,  PARKS JOHN ,  THIE WILLIAM ,  REDEKER FRITZ C ,  HOWALD ARTHUR M ,  SCHOEPP ALAN ,  HEMKER DAVID

IPC: H01L21/00 ,  H01L21/20

CPC classification number: H01L21/67184 ,  H01L21/67017 ,  H01L21/67207 ,  H01L21/67745

Abstract: A cluster architecture including a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules The lab-ambient controlled transfer module and the one or more wet substrate processing modules manage a first ambient environment having a vacuum transfer module coupled to the lab-ambient controlled transfer module and one or more plasma processing modules The vacuum transfer module and the one or more plasma processing modules manage a second ambient environment A controlled ambient transfer module coupled to the vacuum transfer module and one or more ambient processing modules manage a third ambient environment The cluster architecture therefore enables controlled processing of the substrate in eith the first, second or third ambient environments, as well as dupng associated transitions The embodiments also provide for efficient methods for filling a trench of a substrate

Abstract translation: 一种集群架构，包括耦合到一个或多个湿式衬底处理模块的实验室环境受控传输模块。实验室环境受控传输模块和一个或多个湿衬底处理模块管理第一环境环境，其具有耦合到 实验室环境控制转移模块和一个或多个等离子体处理模块真空转移模块和一个或多个等离子体处理模块管理第二周围环境。耦合到真空转移模块的受控环境转移模块和一个或多个环境处理模块管理 第三环境环境因此，集群体系结构能够在第一，第二或第三环境环境中进行衬底的受控处理，以及重复相关的过渡。实施例还提供用于填充衬底的沟槽的有效方法

公开(公告)号：WO2006098888A2

公开(公告)日：2006-09-21

申请号：PCT/US2006007401

申请日：2006-02-27

Applicant: LAM RES CORP ,  KIM YUNSANG ,  BAILEY ANDREW III ,  YOON HYUNGSUK ALEXANDER ,  HOWALD ARTHUR M

Inventor： KIM YUNSANG ,  BAILEY ANDREW III ,  YOON HYUNGSUK ALEXANDER ,  HOWALD ARTHUR M

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/7684 ,  H01L21/31683 ,  H01L21/321 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/32138 ,  H01L21/32139 ,  H01L21/76865 ,  H01L21/76885

Abstract: A method of etching a conductive layer includes converting at least a portion of the conductive layer and etching the conductive layer to substantially remove the converted portion of the conductive layer and thereby expose a remaining surface. The remaining surface has an average surface roughness of less than about 10 nm. A system for etching a conductive layer is also disclosed.

Abstract translation: 蚀刻导电层的方法包括转换导电层的至少一部分并蚀刻导电层，以基本上去除导电层的转换部分，从而暴露出剩余的表面。 剩余的表面具有小于约10nm的平均表面粗糙度。 还公开了用于蚀刻导电层的系统。

公开(公告)号：WO2005094244A2

公开(公告)日：2005-10-13

申请号：PCT/US2004/043911

申请日：2004-12-30

Applicant: LAM RESEARCH CORPORATION ,  BAILEY, Andrew, D., III ,  LOHOKARE, Shrikant, P. ,  HOWALD, Arthur, M. ,  KIM, Yunsang

Inventor： BAILEY, Andrew, D., III ,  LOHOKARE, Shrikant, P. ,  HOWALD, Arthur, M. ,  KIM, Yunsang

IPC: H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/24 ,  H01L29/40 ,  H01L33/00

CPC classification number: B08B7/00 ,  B08B7/0035 ,  B08B7/0071 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32862 ,  H01J2237/022 ,  H01L21/3065 ,  H01L21/32115 ,  H01L21/32136 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/6708 ,  H01L21/7684 ,  Y10S438/905

Abstract: A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.

Abstract translation: 一种用于清洁处理室的方法，包括将处理室的内表面加热至第一温度。 第一个温度足以使第一个物质变得挥发。 第一种可以是沉积在内表面上的几种物质之一。 将清洁化学品注入到处理室中。 清洁化学品可以与第二种物质反应以将第二种类转化为第一种。 挥发的第一种也可以从处理室输出。 还描述了用于清洁处理室的系统。

公开(公告)号：WO2004010457A1

公开(公告)日：2004-01-29

申请号：PCT/US2003/022206

申请日：2003-07-17

Applicant: LAM RESEARCH CORPORATION ,  HOWALD, Arthur, M. ,  KUTHI, Andreas ,  WILCOXSON, Mark, Henry ,  BAILEY, Andrew, D., III

Inventor： HOWALD, Arthur, M. ,  KUTHI, Andreas ,  WILCOXSON, Mark, Henry ,  BAILEY, Andrew, D., III

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/3299 ,  H01Q7/00 ,  H01Q21/29 ,  H05H1/46

Abstract: An antenna arrangement for generating an rf field distribution at a plasma generating region inside a chamber wall of a process chamber of a plasma processing apparatus is described. The antenna arrangement includes an rf inductive antenna to which an rf power supply can be connected to supply an rf current to generate a first rf field extending into the plasma generating region. A passive antenna is also provided which is inductively coupled to the rf inductive antenna and configured to generate a second rf field modifying the first rf field. The rf field distribution at the plasma generating region increases the processing uniformity of the processing apparatus compared to that in the absence of the passive antenna.

Abstract translation: 描述了一种用于在等离子体处理装置的处理室的室壁内的等离子体产生区域处产生射频场分布的天线装置。 天线装置包括一个rf感应天线，rf电源可以连接到rf电源，以提供rf电流以产生延伸到等离子体产生区域中的第一rf场。 还提供无源天线，其被感应耦合到rf感应天线并且被配置为生成修改第一rf场的第二rf场。 与没有无源天线的情况相比，等离子体产生区域的射频场分布增加了处理装置的处理均匀性。