公开(公告)号：WO2008027216A9

公开(公告)日：2008-05-22

申请号：PCT/US2007018270

申请日：2007-08-17

Applicant: LAM RES CORP ,  DORDI YEZDI ,  REDEKER FRITZ C ,  BOYD JOHN ,  THIE WILLIAM ,  ARUNAGIRI TIRUCHIRAPALLI ,  HOWALD ARTHUR M ,  YOON HYUNGSUK ALEXANDER ,  VERTOMMEN JOHAN

Inventor： DORDI YEZDI ,  REDEKER FRITZ C ,  BOYD JOHN ,  THIE WILLIAM ,  ARUNAGIRI TIRUCHIRAPALLI ,  HOWALD ARTHUR M ,  YOON HYUNGSUK ALEXANDER ,  VERTOMMEN JOHAN

IPC: C23C16/00

CPC classification number: H01L21/0206 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883

Abstract: The embodiments provide processes and integrated systems that produce a metal-to-metal or a silicon-to-metal interface to enhance electro-migration performance, to provide lower metal resistivity, and to improve metal-to-metal or silicon-to-metal interfacial adhesion for copper interconnects. An exemplary method of preparing a substrate surface to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of in an integrated system to improve electromigration performance of a copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. System to practice the exemplary method described above are also provided.

Abstract translation: 这些实施例提供了产生金属对金属或硅 - 金属界面以提高电迁移性能，提供较低金属电阻率以及改善金属对金属或硅 - 金属的过程和集成系统 铜互连的界面粘合。 提供了一种制备衬底表面以在集成系统的铜表面上选择性地沉积钴合金材料薄层以提高铜互连的电迁移性能的示例性方法。 该方法包括从集成系统中的衬底表面去除污染物和金属氧化物，并且在去除集成系统中的污染物和金属氧化物之后，使用还原环境来修复衬底表面。 该方法还包括在修复基板表面之后，在集成系统中的铜互连的铜表面上选择性地沉积钴合金材料的薄层。 还提供了用于实践上述示例性方法的系统。

公开(公告)号：WO03096765A2

公开(公告)日：2003-11-20

申请号：PCT/US0313597

申请日：2003-05-01

Applicant: LAM RES CORP ,  HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III ,  BERNEY BUTCH

Inventor： HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III ,  BERNEY BUTCH

IPC: H05H1/46 ,  C23C16/00 ,  C23C16/50 ,  H01J37/32 ,  H01L21/205 ,  H01L21/306 ,  H01L21/3065 ,  H05H1/00

CPC classification number: H01J37/32477 ,  H01J37/32623

Abstract: A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.

Abstract translation: 公开了一种用于处理基板以在其上形成电子部件的等离子体处理室。 等离子体处理室包括在处理基板期间在等离子体处理室中具有朝向等离子体的等离子体面向表面的等离子体面向部件，等离子体面向部件与接地端子电隔离。 等离子体处理室还包括耦合到等离子体面向部件的接地装置，接地装置包括设置在等离子体面向部件和接地端子之间的第一电流路径中的第一电阻电路。 接地装置还包括设置在等离子体面向部件和接地端子之间的至少一个其它电流通路中的RF滤波器装置，其中选择第一电阻电路的电阻值以基本上消除等离子体和等离子体 - 在处理基板期间面对部件。

公开(公告)号：WO2006071816A3

公开(公告)日：2007-02-22

申请号：PCT/US2005046930

申请日：2005-12-22

Applicant: LAM RES CORP ,  HOWALD ARTHUR M ,  NI TUQIANG

Inventor： HOWALD ARTHUR M ,  NI TUQIANG

IPC: C23F1/00 ,  C23C16/505 ,  H01L21/3065

CPC classification number: H01J37/321 ,  C23F4/00 ,  H01J37/32477

Abstract: An inductively coupled plasma processing apparatus includes a chamber (100) having a top opening. A window (16) seals the top opening of the chamber, and the window has an inner surface that is exposed to an internal region of the chamber. A window protector (20) for protecting the inner surface of the window is disposed within the chamber. The window protector (20) is configured to prevent conductive etch byproducts from being deposited on the inner surface of the window in the form of a continuous loop. In one alternative embodiment, a plurality of window protectors (20') is affixed to the inner surface of the window. In another embodiment, the window has a plurality of T-shaped or dovetail slots formed therein. In yet another embodiment, a plurality of rectangular slots is formed in the window and a window protector having corresponding slots is mounted against the inner surface of the window.

Abstract translation: 电感耦合等离子体处理装置包括具有顶部开口的室（100）。 窗口（16）密封室的顶部开口，并且窗口具有暴露于室的内部区域的内表面。 用于保护窗的内表面的窗保护器（20）设置在室内。 窗保护器（20）被配置为防止导电蚀刻副产物以连续环形式沉积在窗的内表面上。 在一个替代实施例中，多个窗保护器（20'）固定到窗的内表面。 在另一个实施例中，窗口具有形成在其中的多个T形或燕尾槽。 在另一个实施例中，在窗口中形成多个矩形槽，并且具有相应槽的窗保护器安装在窗的内表面上。

公开(公告)号：WO2008027216A2

公开(公告)日：2008-03-06

申请号：PCT/US2007018270

申请日：2007-08-17

Applicant: LAM RES CORP ,  DORDI YEZDI ,  REDEKER FRITZ C ,  BOYD JOHN ,  THIE WILLIAM ,  ARUNAGIRI TIRUCHIRAPALLI ,  HOWALD ARTHUR M ,  YOON HYUNGSUK ALEXANDER ,  VERTOMMEN JOHAN

Inventor： DORDI YEZDI ,  REDEKER FRITZ C ,  BOYD JOHN ,  THIE WILLIAM ,  ARUNAGIRI TIRUCHIRAPALLI ,  HOWALD ARTHUR M ,  YOON HYUNGSUK ALEXANDER ,  VERTOMMEN JOHAN

IPC: B05D3/00 ,  B05D1/18 ,  B29C71/04 ,  C23C16/00

CPC classification number: H01L21/0206 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883

Abstract: The embodiments provide processes and integrated systems that produce a metal-to-metal or a silicon-to-metal interface to enhance electro-migration performance, to provide lower metal resistivity, and to improve metal-to-metal or silicon-to-metal interfacial adhesion for copper interconnects. An exemplary method of preparing a substrate surface to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of in an integrated system to improve electromigration performance of a copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. System to practice the exemplary method described above are also provided.

公开(公告)号：WO2006044722A3

公开(公告)日：2006-06-29

申请号：PCT/US2005037125

申请日：2005-10-12

Applicant: LAM RES CORP ,  HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III

Inventor： HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III

IPC: G06F19/00 ,  H01J7/24 ,  H01J37/32 ,  H03H7/40

CPC classification number: H01J37/32082 ,  H01J37/32183 ,  H01J37/3299 ,  H03H7/40 ,  H05H1/46

Abstract: Methods for improving the stability of RF power delivery to a plasma load are disclosed (806). The method includes adding an RF impedance resistor and or a RF power attenuator at one of specific locations in the RF power system to lower the impedance derivatives while keeping the impedance marching circuit in tune with the RF transmission line impedance (804).

Abstract translation: 公开了用于提高RF功率输送到等离子体负载的稳定性的方法（806）。 该方法包括在RF功率系统的特定位置之一处添加RF阻抗电阻器和RF功率衰减器，以降低阻抗导数，同时保持阻抗行进电路与RF传输线路阻抗匹配（804）。

公开(公告)号：WO2006004744A3

公开(公告)日：2006-06-08

申请号：PCT/US2005022914

申请日：2005-06-28

Applicant: LAM RES CORP ,  HOWALD ARTHUR M

Inventor： HOWALD ARTHUR M

IPC: H02H1/00 ,  H01L21/683

CPC classification number: H01L21/6833 ,  H01J37/32082 ,  H02N13/00 ,  Y10T279/23 ,  Y10T307/858

Abstract: A method for removing a substrate that is attached to a bipolar electrostatic chuck (ESC) by application of a bipolar ESC voltage is provided which includes discontinuing the bipolar ESC voltage after processing a current substrate, and determining a monopolar component error of the processing. The method also includes correcting the monopolar component error for a subsequent substrate.

Abstract translation: 提供了一种通过施加双极性ESC电压来除去附着在双极静电卡盘（ESC）上的基板的方法，该方法包括在处理当前基板之后停止双极性ESC电压，并确定处理的单极分量误差。 该方法还包括校正后续衬底的单极分量误差。

公开(公告)号：WO2005094244A3

公开(公告)日：2006-03-30

申请号：PCT/US2004043911

申请日：2004-12-30

Applicant: LAM RES CORP ,  BAILEY ANDREW D III ,  LOHOKARE SHRIKANT P ,  HOWALD ARTHUR M ,  KIM YUNSANG

Inventor： BAILEY ANDREW D III ,  LOHOKARE SHRIKANT P ,  HOWALD ARTHUR M ,  KIM YUNSANG

IPC: B08B6/00 ,  B08B9/00 ,  B44C1/22 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/24 ,  H01L29/40 ,  H01L33/00

CPC classification number: B08B7/00 ,  B08B7/0035 ,  B08B7/0071 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32862 ,  H01J2237/022 ,  H01L21/3065 ,  H01L21/32115 ,  H01L21/32136 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/6708 ,  H01L21/7684 ,  Y10S438/905

Abstract: A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.

Abstract translation: 一种用于清洁处理室的方法，包括将处理室的内表面加热至第一温度。 第一个温度足以使第一个物质变得挥发。 第一种可以是沉积在内表面上的几种物质之一。 将清洁化学品注入到处理室中。 清洁化学品可以与第二种物质反应以将第二种类转化为第一种。 挥发的第一种也可以从处理室输出。 还描述了用于清洁处理室的系统。

公开(公告)号：WO2009045864A3

公开(公告)日：2009-05-22

申请号：PCT/US2008077764

申请日：2008-09-26

Applicant: LAM RES CORP ,  DORDI YEZDI N ,  HOWALD ARTHUR M

Inventor： DORDI YEZDI N ,  HOWALD ARTHUR M

IPC: H01L21/302

CPC classification number: H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76883

Abstract: An integrated process for forming metallization layers for electronic devices that use damascene structures that include low-k dielectric and metal. According to one embodiment of the present invention, the integrated process includes planarizing a gapfill metal in low-k dielectric structures, generating a protective layer on the low-k dielectric followed by cleaning the surface of the gapfill metal. Another embodiment of the present invention includes a method of protecting low-k dielectrics such as carbon doped silicon oxide.

Abstract translation: 一种用于形成使用包括低k电介质和金属的镶嵌结构的电子器件的金属化层的集成方法。 根据本发明的一个实施例，集成工艺包括平面化低k电介质结构中的间隙填充金属，在低k电介质上产生保护层，然后清洁间隙填充金属的表面。 本发明的另一个实施方案包括保护低k电介质如碳掺杂氧化硅的方法。

公开(公告)号：WO2008027386A3

公开(公告)日：2008-08-21

申请号：PCT/US2007018924

申请日：2007-08-28

Applicant: LAM RES CORP ,  BOYD JOHN ,  DORDI YEZDI ,  ARUNAGIRI TIRUCHIRAPALLI ,  MOORING BENJAMIN W ,  PARKS JOHN ,  THIE WILLIAM ,  REDEKER FRITZ C ,  HOWALD ARTHUR M ,  SCHOEPP ALAN ,  HEMKER DAVID

Inventor： BOYD JOHN ,  DORDI YEZDI ,  ARUNAGIRI TIRUCHIRAPALLI ,  MOORING BENJAMIN W ,  PARKS JOHN ,  THIE WILLIAM ,  REDEKER FRITZ C ,  HOWALD ARTHUR M ,  SCHOEPP ALAN ,  HEMKER DAVID

IPC: H01L21/00 ,  H01L21/20

CPC classification number: H01L21/67184 ,  H01L21/67017 ,  H01L21/67207 ,  H01L21/67745

Abstract: A cluster architecture including a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules The lab-ambient controlled transfer module and the one or more wet substrate processing modules manage a first ambient environment having a vacuum transfer module coupled to the lab-ambient controlled transfer module and one or more plasma processing modules The vacuum transfer module and the one or more plasma processing modules manage a second ambient environment A controlled ambient transfer module coupled to the vacuum transfer module and one or more ambient processing modules manage a third ambient environment The cluster architecture therefore enables controlled processing of the substrate in eith the first, second or third ambient environments, as well as dupng associated transitions The embodiments also provide for efficient methods for filling a trench of a substrate

Abstract translation: 一种集群架构，包括耦合到一个或多个湿式衬底处理模块的实验室环境受控传输模块。实验室环境受控传输模块和一个或多个湿衬底处理模块管理第一环境环境，其具有耦合到 实验室环境控制转移模块和一个或多个等离子体处理模块真空转移模块和一个或多个等离子体处理模块管理第二周围环境。耦合到真空转移模块的受控环境转移模块和一个或多个环境处理模块管理 第三环境环境因此，集群体系结构能够在第一，第二或第三环境环境中进行衬底的受控处理，以及重复相关的过渡。实施例还提供用于填充衬底的沟槽的有效方法

公开(公告)号：WO2006098888A2

公开(公告)日：2006-09-21

申请号：PCT/US2006007401

申请日：2006-02-27

Applicant: LAM RES CORP ,  KIM YUNSANG ,  BAILEY ANDREW III ,  YOON HYUNGSUK ALEXANDER ,  HOWALD ARTHUR M

Inventor： KIM YUNSANG ,  BAILEY ANDREW III ,  YOON HYUNGSUK ALEXANDER ,  HOWALD ARTHUR M

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/7684 ,  H01L21/31683 ,  H01L21/321 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/32138 ,  H01L21/32139 ,  H01L21/76865 ,  H01L21/76885

Abstract: A method of etching a conductive layer includes converting at least a portion of the conductive layer and etching the conductive layer to substantially remove the converted portion of the conductive layer and thereby expose a remaining surface. The remaining surface has an average surface roughness of less than about 10 nm. A system for etching a conductive layer is also disclosed.

Abstract translation: 蚀刻导电层的方法包括转换导电层的至少一部分并蚀刻导电层，以基本上去除导电层的转换部分，从而暴露出剩余的表面。 剩余的表面具有小于约10nm的平均表面粗糙度。 还公开了用于蚀刻导电层的系统。