LIQUID TEST SAMPLE STORAGE VESSEL
    12.
    发明专利

    公开(公告)号:JP2003215000A

    公开(公告)日:2003-07-30

    申请号:JP2002012873

    申请日:2002-01-22

    Inventor: SAWADA TSUTOMU

    Abstract: PROBLEM TO BE SOLVED: To provide a liquid test sample storage vessel capable of easily and effectively storing any liquid sample regardless of the kind of liquid test samples and supplying the sample of every storage means with the storage means to a proper observation means or measuring means, and never causing a problem such as liquid leakage. SOLUTION: This liquid sample storage vessel 2 comprises injector tip insert ports 1 at both ends and a flat capillary space continuously provided to the insert ports to store a liquid sample in a thin film form. The insert opening of the injector tip insert port is constituted so as to be tapered from an inlet side having a wide opening capable of inserting an injector tip part 4 to a deep side having a narrow opening on which the inserted injector tip closely abuts. The vessel is formed of a transparent material so as to be observable from the outside. COPYRIGHT: (C)2003,JPO

    METHOD OF REDUCING STRESS OF OXIDE FILM, AND OXIDE FILM STRUCTURE USING THE SAME

    公开(公告)号:JP2003209107A

    公开(公告)日:2003-07-25

    申请号:JP2002005858

    申请日:2002-01-15

    Abstract: PROBLEM TO BE SOLVED: To provide a method of reducing the stress of an oxide film without causing any damage to a silicon substrate and the oxide film. SOLUTION: In the method of reducing the stress of the oxide film formed on the silicon substrate, radical atoms are irradiated on the oxide film to be mixed in atoms deviated from the radical atoms evenly into the entire oxide film, selectively eliminating defects existent inside the oxide film or in an interface between the oxide film and the silicon substrate and consequently reducing the stress of the oxide film. COPYRIGHT: (C)2003,JPO

    Ge3N4 NANO BELT AND METHOD OF MANUFACTURING IT

    公开(公告)号:JP2003191200A

    公开(公告)日:2003-07-08

    申请号:JP2001402986

    申请日:2001-12-21

    Abstract: PROBLEM TO BE SOLVED: To provide a new Ge 3 N 4 nano belt, which will become very useful in the future of semiconductor nano technology and method of manufacturing the Ge 3 N 4 nano belt. SOLUTION: This Ge 3 N 4 nano belt has not a circular but a square cross section and long length and includes Ge 3 N 4 . This method comprises a step of mixing the powder of Ge and SiO 2 , and a step of covering this mixed powder with activated carbon particles, a step of heating the mixed powder with activated carbon particles in NH 3 atmosphere to make it grow into a form of Ge 3 N 4 nano belt and a step of cooling Ge 3 N 4 having a form of belt. COPYRIGHT: (C)2003,JPO

    METHOD FOR SYNTHESIZING CARBON ONION
    18.
    发明专利

    公开(公告)号:JP2003137518A

    公开(公告)日:2003-05-14

    申请号:JP2001333580

    申请日:2001-10-31

    Abstract: PROBLEM TO BE SOLVED: To provide a method for synthesizing carbon onion by a collision on a shock board. SOLUTION: This method comprises mixing silicon carbide (α-SiC or β-SiC) powders with copper powders and pressurizing the resultant mixture by a shock wave to synthesize carbon onion, and is characterized by applying an ultra-high pressure and temperature shock compression having a pressure of 350,000 atm or more and a temperature of 2,700 deg.C or higher to the pressurized formed body of SiC and copper powders. It is preferable that the density of the pressurized formed body is 6.0 g/cm or higher and the pressure of shock compression is 350,000 atm or higher.

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