Abstract:
실록산막및 이를포함하는산화물박막트랜지스터를개시한다. 개시된유기막은 Aminophenyltrimethoxysilane(APheTMS) 및 Aminopropyltrimethoxysilane (APTMS)로형성된것으로산화물박막트랜지스터를포함하는전자소자에사용될수 있다.
Abstract:
본 발명은 유기실록산 단량체와 용매로서의 역할을 함께 할 수 있는 알킬치환된 방향족 탄화수소를 이용하여 전이금속 촉매 존재하 탈수소화 커플링 반응을 유도함으로써 제조되는 신규한 유기실록산 고분자에 관한 것이다. 또한, 본 발명은 단량체의 수를 최소화 하고 제조방법이 단순하며 저가 생산이 가능한 유기실록산 고분자의 제조방법에 관한 것이다.
Abstract:
본발명은유기실록산단량체와용매로서의역할을함께할 수있는알킬치환된방향족탄화수소를이용하여전이금속촉매존재하탈수소화커플링반응을유도함으로써제조되는신규한유기실록산고분자에관한것이다. 또한, 본발명은단량체의수를최소화하고제조방법이단순하며저가생산이가능한유기실록산고분자의제조방법에관한것이다.
Abstract:
PURPOSE: A method for manufacturing a silicon quantum dot thin film containing silicon molecule cluster is provided to obtain the silicon quantum dot thin film by applying partially oxidized silicon quantum dot on a substrate and thermally processing the silicon quantum dot. CONSTITUTION: Silicon nanoparticles are dissolved in an organic solvent. Alkyl group caps the silicon nanoparticles. The organic solvent is an ether-based solvent or tetrahydrofuran. A silicon nanoparticles solution is applied on a silicon substrate. A thermal process is implemented under a vacuum condition to obtain a silicon quantum dot thin film with silicon molecule cluster. The concentration of the silicon nanoparticles solution is between 1 and 20 weight%.
Abstract:
PURPOSE: A methylene-biphenyl-bridged silsesquioxane white LED encapsulant material is provided to obtain a silicon compound with excellent thermal stability, no yellowing, and high refractive index. CONSTITUTION: A method for preparing a methylene-biphenyl-bridged silsesquioxane white LED encapsulant material comprise the steps of: mixing a methylene-biphenyl-bridged compound of chemical formula 3, an organic solvent and a hydrochloric acid solution; and polymerizing the mixture to prepare the methylene-biphenyl-bridged silsesquioxane of chemical formula 1. In chemical formulas 1 and 3, R is -CH2-(C6H4)2-CH2-, R11 and R31~R36 are independently (C1-C4) alkyl group, and m is the integer of 2~1000.
Abstract:
The present invention relates to an organosiloxane polymer including fullerene of high refractive index capable of controlling refractive index, and to a manufacturing method thereof, and more specifically, to an organosiloxane polymer which secures stability and can be produced at low cost because of a simple manufacturing cost by comprising fullerene and an organosiloxane monomer having excellent stability, and to a manufacturing method thereof. Also, a thin film manufactured from the organosiloxane polymer controls refractive index according to heat treatment temperature conditions, and can be applied for an excellent material for an optoelectronic device demanding high stability.
Abstract:
본발명은초저굴절률을갖는실리카막을제조하는방법에관한것으로, 본발명에따른초저굴절률실리카막의제조방법은 a) 에멀젼중합법(emulsion polymerization)으로스티렌모노머(styrene monomer)와친수성작용기를갖는친수성모노머를중합하여, 스티렌계공중합나노입자를제조하는단계; b) 스핀코팅을이용하여상기스티렌계공중합나노입자의수분산액을친수성표면개질된기판에도포하고, 도포된막에초음파를인가하여, 상기스티렌계공중합나노입자가다층으로쌓인다공성폴리머막을형성하는단계; c) 상기다공성폴리머막에실리카전구체를함유한전구체용액을도포또는증착하여폴리머-실리카전구체의복합막을형성하는단계; 및 d) 상기복합막을열처리하여, 상기다공성폴리머막을제거하고다공성실리카막을제조하는단계;를포함하여제조되는특징이있다.