公开(公告)号：KR1020130019275A

公开(公告)日：2013-02-26

申请号：KR1020110081342

申请日：2011-08-16

Applicant: 엘지이노텍 주식회사 ,  대구가톨릭대학교산학협력단

Inventor： 한대섭 ,  문용태 ,  박승환

IPC: H01L33/04 ,  H01L33/06

CPC classification number: H01L33/06 ,  H01L33/36

Abstract: PURPOSE: A light emitting device is provided to improve the performance of a light emitting device by using an energy band gap and calculating a polarization charge. CONSTITUTION: An active layer(114) includes a quantum well and a quantum wall. The active layer is formed on a first conductive type semiconductor layer(112). A second conductive semiconductor layer(116) is formed on the active layer. The plurality of quantum walls and quantum well are laminated on the active layer. The light emitting structure includes the active layer and the nitride semiconductor layer.

Abstract translation: 目的：提供发光器件，以通过使用能带隙和计算极化电荷来改善发光器件的性能。 构成：活性层（114）包括量子阱和量子壁。 有源层形成在第一导电类型半导体层（112）上。 在有源层上形成第二导电半导体层（116）。 多个量子阱和量子阱层叠在有源层上。 发光结构包括有源层和氮化物半导体层。