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公开(公告)号：KR101916032B1
公开(公告)日：2018-11-09
申请号：KR1020110081342
申请日：2011-08-16
Applicant: 엘지이노텍 주식회사 , 대구가톨릭대학교산학협력단
Abstract: 실시예는발광소자, 발광소자의제조방법, 발광소자패키지및 조명시스템에관한것이다. 실시예에따른발광소자는제1 도전형반도체층; 양자우물과양자벽을포함하여상기제1 도전형반도체층상에형성된활성층; 및상기활성층상에제2 도전형반도체층;을포함하며, 상기활성층은 InGaN 양자벽(0
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公开(公告)号：KR1020130019276A
公开(公告)日：2013-02-26
申请号：KR1020110081343
申请日：2011-08-16
Applicant: 엘지이노텍 주식회사 , 대구가톨릭대학교산학협력단
IPC: H01L33/04
CPC classification number: H01L33/06 , H01L2224/48091 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
Abstract: PURPOSE: A light emitting device is provided to improve the spontaneous emission efficiency of a quantum well by efficiently reducing a spatial separation phenomenon of electrons and holes in an active layer. CONSTITUTION: An active layer(114) includes a quantum well(114w) and a quantum wall(114b). The quantum well and the quantum wall are formed between a first conductive semiconductor layer and a second conductive semiconductor layer. An energy band gap becomes parabolic from the edge to the center of the quantum well. The energy band gap gradually increases from the edge to the center of the quantum well.
Abstract translation: 目的：提供一种发光器件，通过有效降低活性层中电子和空穴的空间分离现象来提高量子阱的自发发射效率。 构成：活性层（114）包括量子阱（114w）和量子壁（114b）。 量子阱和量子阱形成在第一导电半导体层和第二导电半导体层之间。 能量带隙从量子阱的边缘到中心变成抛物线。 能带隙从量子阱的边缘逐渐增加到中心。
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公开(公告)号：KR1020130019275A
公开(公告)日：2013-02-26
申请号：KR1020110081342
申请日：2011-08-16
Applicant: 엘지이노텍 주식회사 , 대구가톨릭대학교산학협력단
Abstract: PURPOSE: A light emitting device is provided to improve the performance of a light emitting device by using an energy band gap and calculating a polarization charge. CONSTITUTION: An active layer(114) includes a quantum well and a quantum wall. The active layer is formed on a first conductive type semiconductor layer(112). A second conductive semiconductor layer(116) is formed on the active layer. The plurality of quantum walls and quantum well are laminated on the active layer. The light emitting structure includes the active layer and the nitride semiconductor layer.
Abstract translation: 目的：提供发光器件，以通过使用能带隙和计算极化电荷来改善发光器件的性能。 构成：活性层（114）包括量子阱和量子壁。 有源层形成在第一导电类型半导体层（112）上。 在有源层上形成第二导电半导体层（116）。 多个量子阱和量子阱层叠在有源层上。 发光结构包括有源层和氮化物半导体层。
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5.发明授权AlN 위에 성장된 스트레인이 감소한 고효율 자외선 Bx1Aly1Ga1-x1-y1N/Bx2Aly2Ga1-x2-y2N 양자우물 발광다이오드 有权高效紫外Bx1Aly1Ga1-x1-y1N / Bx2Aly2Ga1-x2-y2N量子阱发光二极管
公开(公告)号：KR101773709B1
公开(公告)日：2017-08-31
申请号：KR1020160056386
申请日：2016-05-09
Applicant: 대구가톨릭대학교산학협력단
Inventor： 박승환
Abstract: 본발명은 BAlGaN/BAlGaN 양자우물구조를구비하는발광다이오드에있어서, 상기양자우물구조는적어도하나의서로교대로적층된 BAlGaN 우물층과 BAlGaN 장벽층의적층구조를포함하며, 양자우물구조의스트레인이 0.2% 내지 0.8%인발광다이오드를제공한다.
Abstract translation: 本发明是BAlGaN / BAlGaN在具有量子阱结构的发光二极管，量子阱结构是至少一个包括彼此层压交替BAlGaN阱层和BAlGaN势垒层的叠层结构，所述量子阱结构的应变， 提供0.2％至0.8％的发光二极管。
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Patent Agency Ranking
公开(公告)号：KR101462238B1
公开(公告)日：2014-12-04
申请号：KR1020120110608
申请日：2012-10-05
Applicant: 대구가톨릭대학교산학협력단
Inventor： 박승환
IPC: H01L33/04
Abstract: 본발명은톱형층을갖는고효율블루(blue) InGaN/GaN 양자우물 LED에관한것으로, 톱형 InGaN/GaN 양자우물(QW) LED 의발광특성은다중대역유효질량이론을사용하여조사하고, 톱형양자우물(QW) 구조의자발적인방출피크는매트릭스요소가톱형층의포함이향상되기때문에기존양자우물(QW) 구조에비해개선되며, 또한, 톱형양자우물(QW) 구조의경우, 우물내에서압전및 자발분극으로인해내부필드효과가감소되기때문에전이에너지는캐리어밀도의약한함수로되어내장된전기장효과를줄일수 있고, 비 (0001) 방향성을갖는기판을사용하는방법이나, 극박의 In 이풍부한 InGaN 우물을사용하는방법, 두꺼운 InGaN 우물내로 AlGaNδ-층을주입하는방법및 4기(基)로된 AlInGaN 장벽을사용하는방법을채용하여내부전계효과를줄이며, 3층엇갈린양자우물(QW) 구조의제조와유사한방법에의해비정방(非正方) 양자우물(QW) 구조의고효율을달성하는각별한장점이있는유용한발명이다.
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公开(公告)号：KR1020140044529A
公开(公告)日：2014-04-15
申请号：KR1020120110608
申请日：2012-10-05
Applicant: 대구가톨릭대학교산학협력단
Inventor： 박승환
IPC: H01L33/04
CPC classification number: H01L33/06 , H01L33/20 , H01L33/26 , H01L2924/12041
Abstract: The present invention relates to a high-efficiency blue InGaN/GaN quantum well LED with a saw-like layer. A light emitting property of the saw-like InGaN/GaN quantum well (QW) is inspected by using a multi-band effective mass theory. A spontaneous emission peak of a saw-like QW structure is improved compared to a conventional QW structure by adding a saw-like layer into a matrix element. In the saw-like QW structure, an inner field effect is reduced by a piezoelectric effect and a spontaneous polarization in the well, and an embedded electric field effect is decreased by a transition energy which is represented by a weak function of a carrier density. The inner electric field effect is decreased by adopting a method using a substrate with a non-(0001) orientation, a method using an InGaN/GaN well with In-rich films, and a method using an AlInGaN barrier having four groups. The high-efficiency non-square quantum well structure is realized by using a method similar to a manufacturing method of a 3-layered nonsquare quantum well (QW) structure.
Abstract translation: 本发明涉及具有锯状层的高效率蓝色InGaN / GaN量子阱LED。 通过使用多频带有效质量理论来检查锯状InGaN / GaN量子阱（QW）的发光特性。 与传统的QW结构相比，通过将锯状层添加到矩阵元素中，锯状QW结构的自发发射峰值得到改善。 在锯状QW结构中，通过压电效应和阱中的自发极化来减小内场效应，并且由载流子密度的弱函数表示的过渡能量降低嵌入的电场效应。 通过采用使用具有非（0001）取向的衬底的方法，使用具有富In膜的InGaN / GaN阱的方法以及使用具有四个组的AlInGaN势垒的方法来降低内部电场效应。 通过使用与3层非方形量子阱（QW）结构的制造方法相似的方法来实现高效率的非方形量子阱结构。
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公开(公告)号：KR1020170094027A
公开(公告)日：2017-08-17
申请号：KR1020160014731
申请日：2016-02-05
Applicant: 대구가톨릭대학교산학협력단
IPC: H01L31/0352 , H01L31/08 , H01L31/0224 , H01L31/18
Abstract: 본발명의광검출기는기판상에형성되며 InGaN/InAlN 적층된양자우물구조를포함하는광검출기에있어서, 상기양자우물구조는적어도하나의서로교대로적층된우물층과장벽층의적층구조를포함하며, 상기장벽층과우물층에각각 In을첨가하되, 스트레스ε는0.3% 내지 0.8%인범위에서, 상기우물층의두께가 10Å내지 14Å의범위를가지는광검출기를제공한다.
Abstract translation: 本发明的光检测器包括形成在衬底上并包括InGaN / InAlN堆叠量子阱结构的量子阱结构，其中量子阱结构包括至少一个交替堆叠的阱层和势垒层的堆叠结构 其中In被添加到阻挡层和阱层中的每一个中，并且应力ε在0.3到0.8％的范围内，阱层的厚度在10到14埃的范围内。
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公开(公告)号：KR1020130110982A
公开(公告)日：2013-10-10
申请号：KR1020120033378
申请日：2012-03-30
Applicant: 대구가톨릭대학교산학협력단
Inventor： 박승환
Abstract: PURPOSE: A method for theoretically analyzing optical properties of an InGaN/CdZnO quantum well structure which is matched up to be biased is provided to remarkably improve optical matrix elements by removing the polarity of inner electric field by the invalidation of spontaneous polarization and piezoelectric polarization between a well and an obstacle. CONSTITUTION: A method for theoretically analyzing optical properties of an InGaN/CdZnO quantum well structure which is matched up to be biased includes the following steps of: acquiring a wave function by using Hamiltonian (Step1); acquiring a valence strip by using one method of a logical self-consistent and a Poisson equation by using an acquired wave function (Step2); acquiring many-body optical spectra by using the acquired valence strip (Step3); and comparing the result of the many-body optical spectrum with properties of a light emitting element. [Reference numerals] (AA) Start; (BB,EE) Step of acquiring a wave function; (CC) Step of acquiring a valence strip; (DD) Step of acquiring many-body optical spectra; (FF) End; (S1) Acquire a wave function by using Hamiltonian; (S2) Acquire a valence strip; (S3) Acquire many-body optical spectra; (S4) Compare the result of the many-body optical spectrum with properties of an existing light emitting element
Abstract translation: 目的：通过理论分析与偏置相匹配的InGaN / CdZnO量子阱结构的光学性质的方法，通过自发极化无效和消除极化性能，显着改善光矩阵元素， 一个井和一个障碍。 构成：用于理论分析与偏压匹配的InGaN / CdZnO量子阱结构的光学性质的方法包括以下步骤：通过使用哈密顿量获得波函数（Step1）; 通过使用一种采用逻辑自相一致方法和泊松方程的获取波函数获取价带（Step2）; 通过使用获得的价带获取多体光谱（步骤3）; 并将多体光谱的结果与发光元件的性质进行比较。 （附图标记）（AA）开始; （BB，EE）获取波函数的步骤; （CC）获取价带的步骤; （DD）获取多体光谱的步骤; （FF）结束; （S1）采用哈密尔顿算子获取波函数; （S2）获取价带; （S3）获取多体光谱; （S4）将多体光谱的结果与现有的发光元件的性质进行比较
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