公开(公告)号：KR1020110047117A

公开(公告)日：2011-05-06

申请号：KR1020100082019

申请日：2010-08-24

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 니와다카후미 ,  교우다히데하루 ,  혼타케고우이치

IPC: H01L21/027

CPC classification number: H01L21/0274 ,  G03F1/60 ,  H01L21/0273

Abstract: PURPOSE: A method for processing a substrate and a computer-readable storage medium are provided to reduce an amount of supplied resist solutions for forming a second resist film by modifying the surface of a first resist pattern. CONSTITUTION: A first resist film is formed by spreading resist solutions on a wafer of a film(F). A first resist pattern is formed by selectively exposing and developing the first resist film. The surface(P1a) of the first resist pattern is modified by spreading an ether based surface modifier on a wafer. A second resist film(R2) is formed by spreading the resist solutions on the wafer with the first resist pattern. A second resist pattern is formed on the same layer as the first resist pattern by selectively exposing and developing the second resist layer.

Abstract translation: 目的：提供一种用于处理基板和计算机可读存储介质的方法，以通过修改第一抗蚀剂图案的表面来减少用于形成第二抗蚀剂膜的所提供的抗蚀剂溶液的量。 构成：通过将抗蚀剂溶液涂布在膜（F）的晶片上来形成第一抗蚀剂膜。 通过选择性地曝光和显影第一抗蚀剂膜形成第一抗蚀剂图案。 第一抗蚀剂图案的表面（P1a）通过在晶片上铺展醚基表面改性剂而被改性。 通过用第一抗蚀剂图案将抗蚀剂溶液铺展在晶片上来形成第二抗蚀剂膜（R2）。 通过选择性地曝光和显影第二抗蚀剂层，在与第一抗蚀剂图案相同的层上形成第二抗蚀剂图案。