公开(公告)号：KR1020080005116A

公开(公告)日：2008-01-10

申请号：KR1020070067707

申请日：2007-07-05

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 미야가와마사아키 ,  사토데츠지

IPC: H01L21/3065

CPC classification number: H01L21/6833 ,  H01J37/32642 ,  H01J37/32724

Abstract: A heat transfer structure and a substrate processing apparatus are provided to extend a lifetime of a ring-like member by maintaining a temperature of a consumable to be lower than 225 °C during an etching process. A heat transfer structure is arranged in a process chamber, which performs a plasma process on a substrate in a low pressure atmosphere. The heat transfer structure includes a consumable, a cooling member(12), and a heat conductor(39). The consumable includes an exposed surface, which is exposed to plasma. The cooling member cools down the consumable. The heat conductor is arranged between the consumable and the cooling member and made of a gel-type material. A ratio between a strength, expressed in asker C, with respect to a heat conductivity, expressed in W/mK, of the heat conductor is smaller than 20.

Abstract translation: 提供传热结构和基板处理装置，以在蚀刻过程中通过将消耗品的温度维持在低于225℃来延长环状构件的寿命。 传热结构布置在处理室中，其在低压气氛中对基板执行等离子体处理。 传热结构包括消耗品，冷却部件（12）和热导体（39）。 消耗品包括暴露于等离子体的暴露表面。 冷却部件冷却消耗品。 热导体设置在消耗品和冷却部件之间，并由凝胶型材料制成。 以热交换器C表示的强度相对于热导率（以W / mK表示）的热导体之间的比率小于20。