公开(公告)号：KR1020080075191A

公开(公告)日：2008-08-14

申请号：KR1020087014896

申请日：2006-11-22

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 야마자키가즈요시 ,  아오야마신타로 ,  아키야마고지

IPC: H01L21/316 ,  H01L21/336

CPC classification number: H01L21/67207 ,  H01L21/268 ,  H01L21/28211 ,  H01L21/31645 ,  H01L21/318

Abstract: This invention provides a method for modifying a highly dielectric thin film provided on the surface of an object using an organometallic compound material. The method comprises a provision step of providing the object with the highly dielectric thin film formed on the surface thereof, and a modification step of applying ultraviolet light to the highly dielectric thin film in an inert gas atmosphere while maintaining the object at a predetermined temperature to modify the highly dielectric thin film. According to the above constitution, the carbon component can be eliminated from the highly dielectric thin film, and the whole material can be thermally shrunk to improve the density, whereby the occurrence of defects can be prevented and the film density can be improved to enhance the specific permittivity and thus to provide a high level of electric properties.

Abstract translation: 本发明提供一种使用有机金属化合物材料修饰在物体表面上设置的高电介质薄膜的方法。 该方法包括向物体提供在其表面上形成的高电介质薄膜的设置步骤，以及将惰性气体气氛中的高电介质薄膜施加紫外光，同时将物体保持在预定温度至 修改高介电性薄膜。 根据上述结构，可以从高电介质薄膜中除去碳成分，并且整个材料可以热收缩以提高密度，从而可以防止缺陷的发生，并且可以提高膜密度以提高 比介电常数，从而提供高水平的电性能。