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公开(公告)号:KR1020130133140A
公开(公告)日:2013-12-06
申请号:KR1020130059760
申请日:2013-05-27
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/312 , H01L21/31
CPC classification number: B05D1/60 , H01L21/02118 , H01L21/02225
Abstract: The present invention is to form a polyimide layer used for an controllable insulating layer in a process for forming the polyimide layer on a substrate. A wafer (W) is heated to generate the polyimide layer (1). For example, a first process gas including a first monomer of PMDA and a nonaromatic monomer, for example, a second process gas including a second monomer of HMDA are periodically supplied. When the process gas is changed, an exchange gas is supplied to a reaction pipe (32) and the monomers are not mixed with each other in the reaction pipe (32). [Reference numerals] (AA) 1 cycle;(BB) Time
Abstract translation: 本发明是在基板上形成聚酰亚胺层的工序中形成用于可控绝缘层的聚酰亚胺层。 加热晶片(W)以产生聚酰亚胺层(1)。 例如,周期性地提供包含PMDA的第一单体和非芳族单体的第一工艺气体,例如包括HMDA的第二单体的第二工艺气体。 当处理气体改变时,向反应管(32)供给交换气体,并且单体在反应管(32)中不混合。 (标号)(AA)1个循环;(BB)时间