公开(公告)号：KR1020100075816A

公开(公告)日：2010-07-05

申请号：KR1020100059596

申请日：2010-06-23

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키 ,  오사와테츠

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: C23C16/4408 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4558 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/022 ,  H01L21/3145 ,  H01L21/3185

Abstract: PURPOSE: A plasma processing method is provided to process a high quality plasma to a target by removing impurity from a gas inlet of a process chamber. CONSTITUTION: A substrate(W) is prepared. The substrate comprises a silicon oxide film. The plasma is generated by supplying nitrogen gas to a silicon oxide film. The silicon oxide film is nitrified with the plasma in order to change the top of the silicon oxide film to the silicon nitride film.

Abstract translation: 目的：提供等离子体处理方法，通过从处理室的气体入口去除杂质来处理高质量的等离子体到靶。 构成：制备基材（W）。 衬底包括氧化硅膜。 通过向氧化硅膜供给氮气而产生等离子体。 为了将氧化硅膜的顶部改变为氮化硅膜，氧化硅膜被等离子体硝化。

公开(公告)号：KR1020090055540A

公开(公告)日：2009-06-02

申请号：KR1020090040832

申请日：2009-05-11

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키 ,  오사와테츠

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: C23C16/4408 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4558 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/022 ,  H01L21/3145 ,  H01L21/3185

Abstract: A plasma processing method is provided to perform a high quality plasma process in an object by removing impurity from a gas inlet part of a process chamber. A plasma processing apparatus(100) performs a high quality plasma process in an object by removing impurity from a gas inlet part of a process chamber(102). The gas inlet part is connected to the process chamber. A reaction gas flows to the process chamber. A first vacuum pump(152) is connected to the process chamber in order to exhaust the process chamber. An exhaust device is connected to the gas inlet part in order to exhaust the reaction gas from the gas inlet part. The exhaust device includes a second vacuum pump(154) which connects the gas inlet part to the first vacuum pump.

Abstract translation: 提供了一种等离子体处理方法，通过从处理室的气体入口部分去除杂质来在物体中进行高质量的等离子体处理。 等离子体处理装置（100）通过从处理室（102）的气体入口部分去除杂质来执行物体中的高质量等离子体处理。 气体入口部分连接到处理室。 反应气体流到处理室。 第一真空泵（152）连接到处理室以便排出处理室。 排气装置连接到气体入口部分，以从气体入口部排出反应气体。 排气装置包括将气体入口部分连接到第一真空泵的第二真空泵（154）。

公开(公告)号：KR100738767B1

公开(公告)日：2007-07-12

申请号：KR1020010014799

申请日：2001-03-22

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키 ,  오사와테츠

IPC: H01L21/20

CPC classification number: C23C16/4408 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4558 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/022 ,  H01L21/3145 ,  H01L21/3185

Abstract: A plasma processing apparatus can apply a high-quality process to an object to be processed by removing impurities from a gas-introducing part of a process chamber. The gas-introducing part connected to the process chamber so as to introduce a reactant gas into the process chamber. A first vacuum pump is connected to the process chamber so as to evacuate gas from the process chamber so that the process chamber is maintained at a negative pressure. A gas-evacuating arrangement is connected to the gas-introducing part so as to exclusively evacuate the reactant gas from the gas-introducing part. The gas-evacuating arrangement includes a second vacuum pump directly connected to the gas introducing part or a bypass passage connecting the gas-introducing par to the first vacuum pump by bypassing the process chamber.

公开(公告)号：KR1020070032743A

公开(公告)日：2007-03-22

申请号：KR1020070010118

申请日：2007-01-31

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키 ,  오사와테츠

IPC: H01L21/20 ,  H01L21/205 ,  H01L21/3065

CPC classification number: C23C16/4408 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4558 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/022 ,  H01L21/3145 ,  H01L21/3185

Abstract: A plasma processing apparatus can apply a high-quality process to an object to be processed by removing impurities from a gas-introducing part of a process chamber. The gas-introducing part connected to the process chamber so as to introduce a reactant gas into the process chamber. A first vacuum pump is connected to the process chamber so as to evacuate gas from the process chamber so that the process chamber is maintained at a negative pressure. A gas-evacuating arrangement is connected to the gas-introducing part so as to exclusively evacuate the reactant gas from the gas-introducing part. The gas-evacuating arrangement includes a second vacuum pump directly connected to the gas introducing part or a bypass passage connecting the gas-introducing par to the first vacuum pump by bypassing the process chamber.

Abstract translation: 等离子体处理装置可以通过从处理室的气体引入部分去除杂质来将高质量处理应用于待处理对象。 连接到处理室的气体引入部分将反应气体引入处理室。 第一真空泵连接到处理室以从处理室排出气体，使得处理室保持负压。 抽气装置连接到气体引入部分，以便专门地从气体引入部分抽空反应物气体。 抽气装置包括直接连接到气体引入部件的第二真空泵或旁路通道，旁路通道绕过处理室将气体引入部件连接到第一真空泵。

公开(公告)号：KR1020010093073A

公开(公告)日：2001-10-27

申请号：KR1020010014799

申请日：2001-03-22

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키 ,  오사와테츠

IPC: H01L21/20

CPC classification number: C23C16/4408 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4558 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/022 ,  H01L21/3145 ,  H01L21/3185

Abstract: PURPOSE: To provide a plasma processing apparatus and method which can process an object to be processed with high quality by removing impurities. CONSTITUTION: The plasma processing apparatus includes a processing chamber for performing prescribed plasma processing operations to an object to be processed, a gas supply mechanism for supplying a gas for processing of the object, a first vacuum pump connected to the processing chamber and having a vacuum state kept therein, and a second vacuum pump connected to the gas supply mechanism for evacuating the gas supply mechanism.

Abstract translation: 目的：提供一种能够通过去除杂质以高质量处理待处理物体的等离子体处理装置和方法。 构成：等离子体处理装置包括：处理室，用于对待处理物体进行规定的等离子体处理操作;供气机构，用于供应用于处理物体的气体;第一真空泵，连接到处理室并具有真空 状态保持在其中，第二真空泵连接到气体供给机构，用于抽气气体供给机构。

公开(公告)号：KR1020010093072A

公开(公告)日：2001-10-27

申请号：KR1020010014798

申请日：2001-03-22

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키 ,  오사와테츠

IPC: H01L21/20

CPC classification number: H01J37/32192 ,  C23C16/511

Abstract: PURPOSE: To provide a plasma processing system performing high quality plasma processing by preventing mixing of impurities, while ensuring a prescribed plasma processing rate of an article to be processed, a member for introducing plasma and a dielectric. CONSTITUTION: A dielectric plate, having dielectric constant εt and a thickness H, can be disposed between a chamber for plasma processing an article to be processed and a slot electrode for guiding a microwave required for plasma processing. The thickness H satisfies the relation 0.5 λ

Abstract translation: 目的：提供一种等离子体处理系统，通过防止杂质混合，同时确保待处理物品的规定等离子体处理速度，等离子体引入部件和电介质等，进行高质量的等离子体处理。 构成：具有介电常数εt和厚度H的电介质板可以设置在用于等离子体处理待处理物品的室和用于引导等离子体处理所需的微波的槽电极之间。 厚度H满足0.5λ