公开(公告)号：KR100985953B1

公开(公告)日：2010-10-06

申请号：KR1020070048124

申请日：2007-05-17

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키 ,  오사와테츠

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: C23C16/4408 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4558 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/022 ,  H01L21/3145 ,  H01L21/3185

Abstract: A plasma processing apparatus can apply a high-quality process to an object to be processed by removing impurities from a gas-introducing part of a process chamber. The gas-introducing part connected to the process chamber so as to introduce a reactant gas into the process chamber. A first vacuum pump is connected to the process chamber so as to evacuate gas from the process chamber so that the process chamber is maintained at a negative pressure. A gas-evacuating arrangement is connected to the gas-introducing part so as to exclusively evacuate the reactant gas from the gas-introducing part. The gas-evacuating arrangement includes a second vacuum pump directly connected to the gas introducing part or a bypass passage connecting the gas-introducing par to the first vacuum pump by bypassing the process chamber.

公开(公告)号：KR101116056B1

公开(公告)日：2012-02-14

申请号：KR1020110003105

申请日：2011-01-12

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키 ,  오사와테츠

IPC: H05H1/46 ,  H01L21/205 ,  H01L21/3065

CPC classification number: C23C16/4408 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4558 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/022 ,  H01L21/3145 ,  H01L21/3185

Abstract: 본 발명의 플라즈마 처리 장치는 처리실의 가스 도입부로부터 불순물을 제거함으로써 피처리체를 고품질 플라즈마 처리한다. 가스 도입부가 처리실에 접속되어 반응 가스가 처리실로 도입되게 한다. 제 1 진공 펌프는 상기 처리실이 감압 환경으로 유지되도록 처리실을 배기하기 위해서 처리실에 접속된다. 배기 장치는 가스 도입부로부터 반응 가스만을 배기하도록 가스 도입부에 접속된다. 배기 장치는 처리실을 우회함으로써 가스 도입부를 제 1 진공 펌프에 직접 접속하는 제 2 진공 펌프를 구비한다.

Abstract translation: 等离子体处理装置可以通过从处理室的气体引入部分去除杂质来将高质量处理应用于待处理对象。 连接到处理室的气体引入部分将反应气体引入处理室。 第一真空泵连接到处理室以从处理室排出气体，使得处理室保持负压。 抽气装置连接到气体引入部分，以便专门地从气体引入部分抽空反应物气体。 抽气装置包括直接连接到气体引入部件的第二真空泵或旁路通道，旁路通道绕过处理室将气体引入部件连接到第一真空泵。

公开(公告)号：KR100693695B1

公开(公告)日：2007-03-09

申请号：KR1020010014798

申请日：2001-03-22

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키 ,  오사와테츠

IPC: H01L21/20

CPC classification number: H01J37/32192 ,  C23C16/511

Abstract: 본 발명은 유전판을 투과하는 마이크로파로 인해 불순물이 발생하는 것을 방지함으로써 피처리체에 고품질의 플라즈마 처리를 실시하는 것을 목적으로 한다. 유전판은 플라즈마 처리 장치의 처리실과, 플라즈마 처리에 필요한 마이크로파를 안내하는 슬롯 전극 사이에 배치 가능한다. 상기 유전판의 상기 두께(H)는 상기 유전판내의 상기 마이크로파의 파장(λ)과 마이크로판의 투과로 인한 유전판의 유리가 최소화되도록 하는 사전설정된 관계를 가진다. 상기 파장(λ)은 λ=λ
O n의 관계를 가지며, 여기서 λ
O 는 진공중의 상기 마이크로파의 파장이며, n은 상기 유전판의 파장 단축율 n=1/(ε
t )
l/2 을 이용하여 얻으며, ε
t 는 진공에서 유전판의 비유전율이다.

公开(公告)号：KR1020110010660A

公开(公告)日：2011-02-01

申请号：KR1020110003105

申请日：2011-01-12

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키 ,  오사와테츠

IPC: H05H1/46 ,  H01L21/205 ,  H01L21/3065

CPC classification number: C23C16/4408 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4558 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/022 ,  H01L21/3145 ,  H01L21/3185

Abstract: PURPOSE: A plasma processing apparatus is provided to process a target with high quality plasma by removing foreign material from a gas inlet. CONSTITUTION: A plasma processing apparatus generates microwave plasma through an antenna member(120) having a plurality of slits in a process chamber. A dielectric substrate is installed in the plasma processing apparatus and has thickness which is 0.3-0.4 times of microwave wavelength or 0.5-0.75 times of microwave wavelength The dielectric substrate is made of AlN or quartz. A temperature control plate(122) is arranged in the peripheral part of the dielectric substrate. A shower plate is arranged in the bottom of the dielectric substrate. A gas flow path for supplying a process gas is formed in boundary of the dielectric substrate and the shower plate.

Abstract translation: 目的：提供一种等离子体处理装置，通过从气体入口去除异物来处理具有高质量等离子体的靶。 构成：等离子体处理装置通过处理室中具有多个狭缝的天线构件（120）产生微波等离子体。 电介质基板安装在等离子体处理装置中，其厚度为微波波长的0.3-0.4倍或微波波长的0.5-0.75倍。电介质基板由AlN或石英制成。 温度控制板（122）布置在电介质基板的周边部分中。 电介质基板的底部布置有喷淋板。 在电介质基板和喷淋板的边界形成用于供给处理气体的气体流路。

公开(公告)号：KR100960410B1

公开(公告)日：2010-05-28

申请号：KR1020090120493

申请日：2009-12-07

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키 ,  오사와테츠

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: C23C16/4408 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4558 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/022 ,  H01L21/3145 ,  H01L21/3185

Abstract: A plasma processing apparatus can apply a high-quality process to an object to be processed by removing impurities from a gas-introducing part of a process chamber. The gas-introducing part connected to the process chamber so as to introduce a reactant gas into the process chamber. A first vacuum pump is connected to the process chamber so as to evacuate gas from the process chamber so that the process chamber is maintained at a negative pressure. A gas-evacuating arrangement is connected to the gas-introducing part so as to exclusively evacuate the reactant gas from the gas-introducing part. The gas-evacuating arrangement includes a second vacuum pump directly connected to the gas introducing part or a bypass passage connecting the gas-introducing par to the first vacuum pump by bypassing the process chamber.

Abstract translation: 等离子体处理装置可以通过从处理室的气体引入部分去除杂质来将高质量处理应用于待处理对象。 连接到处理室的气体引入部分将反应气体引入处理室。 第一真空泵连接到处理室以从处理室排出气体，使得处理室保持负压。 抽气装置连接到气体引入部分，以便专门地从气体引入部分抽空反应物气体。 抽气装置包括直接连接到气体引入部件的第二真空泵或旁路通道，旁路通道绕过处理室将气体引入部件连接到第一真空泵。

公开(公告)号：KR1020100007827A

公开(公告)日：2010-01-22

申请号：KR1020090120493

申请日：2009-12-07

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키 ,  오사와테츠

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: C23C16/4408 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4558 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/022 ,  H01L21/3145 ,  H01L21/3185

Abstract: PURPOSE: A plasma processing method is provided to perform the plasma processing of the high quality about the processed body. CONSTITUTION: The silicon substrate is prepared within the process chamber(102). The silicon oxidation film is formed in the silicon substrate. The nitrogen gas is introduced within the process chamber on the silicon oxide film. Using the antenna member(120), the plasma is generated. Using the plasma, the plasma processing of the silicon substrate is operated. The antenna member includes the slot electrode(200). The slot electrode has a plurality of slits. The gate insulating layer is formed.

Abstract translation: 目的：提供等离子体处理方法，以对处理体进行高质量的等离子体处理。 构成：硅衬底在处理室（102）内制备。 在硅衬底中形成硅氧化膜。 氮气被引入氧化硅膜上的处理室内。 使用天线构件（120），产生等离子体。 使用等离子体，操作硅衬底的等离子体处理。 天线构件包括槽电极（200）。 槽电极具有多个狭缝。 形成栅极绝缘层。

公开(公告)号：KR101061608B1

公开(公告)日：2011-09-01

申请号：KR1020100059596

申请日：2010-06-23

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키 ,  오사와테츠

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: C23C16/4408 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4558 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/022 ,  H01L21/3145 ,  H01L21/3185

Abstract: A plasma processing apparatus can apply a high-quality process to an object to be processed by removing impurities from a gas-introducing part of a process chamber. The gas-introducing part connected to the process chamber so as to introduce a reactant gas into the process chamber. A first vacuum pump is connected to the process chamber so as to evacuate gas from the process chamber so that the process chamber is maintained at a negative pressure. A gas-evacuating arrangement is connected to the gas-introducing part so as to exclusively evacuate the reactant gas from the gas-introducing part. The gas-evacuating arrangement includes a second vacuum pump directly connected to the gas introducing part or a bypass passage connecting the gas-introducing par to the first vacuum pump by bypassing the process chamber.

公开(公告)号：KR100953037B1

公开(公告)日：2010-04-14

申请号：KR1020090040832

申请日：2009-05-11

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키 ,  오사와테츠

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: C23C16/4408 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4558 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/022 ,  H01L21/3145 ,  H01L21/3185

Abstract: A plasma processing apparatus can apply a high-quality process to an object to be processed by removing impurities from a gas-introducing part of a process chamber. The gas-introducing part connected to the process chamber so as to introduce a reactant gas into the process chamber. A first vacuum pump is connected to the process chamber so as to evacuate gas from the process chamber so that the process chamber is maintained at a negative pressure. A gas-evacuating arrangement is connected to the gas-introducing part so as to exclusively evacuate the reactant gas from the gas-introducing part. The gas-evacuating arrangement includes a second vacuum pump directly connected to the gas introducing part or a bypass passage connecting the gas-introducing par to the first vacuum pump by bypassing the process chamber.

公开(公告)号：KR100873549B1

公开(公告)日：2008-12-11

申请号：KR1020070010118

申请日：2007-01-31

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키 ,  오사와테츠

IPC: H01L21/20 ,  H01L21/205 ,  H01L21/3065

CPC classification number: C23C16/4408 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4558 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/022 ,  H01L21/3145 ,  H01L21/3185

Abstract: A plasma processing apparatus can apply a high-quality process to an object to be processed by removing impurities from a gas-introducing part of a process chamber. The gas-introducing part connected to the process chamber so as to introduce a reactant gas into the process chamber. A first vacuum pump is connected to the process chamber so as to evacuate gas from the process chamber so that the process chamber is maintained at a negative pressure. A gas-evacuating arrangement is connected to the gas-introducing part so as to exclusively evacuate the reactant gas from the gas-introducing part. The gas-evacuating arrangement includes a second vacuum pump directly connected to the gas introducing part or a bypass passage connecting the gas-introducing par to the first vacuum pump by bypassing the process chamber.

公开(公告)号：KR1020070059036A

公开(公告)日：2007-06-11

申请号：KR1020070048124

申请日：2007-05-17

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키 ,  오사와테츠

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: C23C16/4408 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4558 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/022 ,  H01L21/3145 ,  H01L21/3185

Abstract: A plasma processing method is provided to perform a high-quality plasma treatment on a processed article by removing impurities from a gas introducing part in a process chamber. A substrate is prepared which has a silicon oxide layer. Nitrogen gas is supplied to the surface of the silicon oxide layer to generate plasma. A nitrification process is performed on the silicon oxide layer by using the plasma so as to transform the upper part of the silicon oxide layer into a silicon nitride layer. The density of nitrogen on a boundary between the silicon oxide layer and the silicon nitride layer is lower than that of the silicon oxide layer under the silicon nitride layer.

Abstract translation: 提供了一种等离子体处理方法，通过从处理室中的气体导入部分去除杂质，对加工品进行高质量等离子体处理。 制备具有氧化硅层的衬底。 将氮气供给到氧化硅层的表面以产生等离子体。 通过使用等离子体对氧化硅层进行硝化处理，以将氧化硅层的上部变换为氮化硅层。 氧化硅层和氮化硅层之间的边界上的氮密度低于氮化硅层下面的氧化硅层的密度。