公开(公告)号：KR1020120034016A

公开(公告)日：2012-04-09

申请号：KR1020110098798

申请日：2011-09-29

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오사키요시노리 ,  다카하시데츠로 ,  마에카와고지

IPC: H01L21/3105 ,  H01L21/314 ,  H01L21/336

CPC classification number: H01L21/02332 ,  H01L21/0234 ,  H01L21/28202 ,  H01L21/3105

Abstract: PURPOSE: A method of modifying an insulating film is provided to control the small reduction of nitrogen concentration in a silicon oxide nitride film since a reforming process starts while a vacuum atmosphere is maintained after plasma nitriding process. CONSTITUTION: A wafer of a processing object is carried into a plasma processing apparatus(S1). A plasma nitriding process is performed for a silicon oxide film on a wafer surface and a silicon oxide nitride film is formed(S2). A surface of the silicon oxide nitride film is oxidized by plasma by using the plasma processing apparatus(S3). The wafer is carried out from the plasma processing apparatus(S4).

Abstract translation: 目的：提供一种修改绝缘膜的方法，用于控制在等离子体氮化处理之后维持真空气氛下重整过程开始时氧化硅氮化物膜中的氮浓度的小的减少。 构成：将处理对象的晶片搬入等离子体处理装置（S1）。 对晶片表面上的氧化硅膜进行等离子体氮化处理，形成氮氧化硅膜（S2）。 通过使用等离子体处理装置，氧化硅氮化物膜的表面被等离子体氧化（S3）。 晶片从等离子体处理装置（S4）进行。