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    석영제부재의 표면 처리 방법, 플라즈마 처리 장치 및 플라즈마 처리 방법
    2.
    发明公开
    석영제부재의 표면 처리 방법, 플라즈마 처리 장치 및 플라즈마 처리 방법 有权
    等离子体表面处理方法，QUARTZ成员，等离子体处理设备和等离子体处理方法

    公开(公告)号：KR1020080011123A

    公开(公告)日：2008-01-31

    申请号：KR1020070075849

    申请日：2007-07-27

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 다카하시데츠로

    IPC: H01L21/3065

    CPC classification number: C03C23/006 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32238

    Abstract: A plasma surface processing method, a quartz member, a plasma processing apparatus, and a plasma processing method are provided to produce a reliable semiconductor device by using a silicon nitride film formed by processing plasma nitride as a gate insulating film. A plasma processing apparatus includes a chamber(1), a planar antenna(31), and a control unit. The chamber performs evacuation for processing a target substrate with plasma. The planar antenna has a plurality of slots for introducing a microwave into the chamber. The control unit controls the plasma processing apparatus to perform a plasma surface treatment which is performed on a quartz member used under a plasma-exposed environment by using plasma having an ion energy greater than 5.3 eV.

    Abstract translation: 提供等离子体表面处理方法，石英构件，等离子体处理装置和等离子体处理方法，以通过使用通过处理等离子体氮化物形成的氮化硅膜作为栅极绝缘膜来制造可靠的半导体器件。 等离子体处理装置包括室（1），平面天线（31）和控制单元。 该室进行排气以用等离子体处理目标衬底。 平面天线具有用于将微波引入室的多个槽。 控制单元控制等离子体处理装置，通过使用离子能量大于5.3eV的等离子体，对等离子体暴露环境下使用的石英部件进行等离子体表面处理。

    절연막의 개질 방법
    7.
    发明公开
    절연막의 개질 방법 失效
    修改绝缘膜的方法

    公开(公告)号：KR1020120034016A

    公开(公告)日：2012-04-09

    申请号：KR1020110098798

    申请日：2011-09-29

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 오사키요시노리 ,  다카하시데츠로 ,  마에카와고지

    IPC: H01L21/3105 ,  H01L21/314 ,  H01L21/336

    CPC classification number: H01L21/02332 ,  H01L21/0234 ,  H01L21/28202 ,  H01L21/3105

    Abstract: PURPOSE: A method of modifying an insulating film is provided to control the small reduction of nitrogen concentration in a silicon oxide nitride film since a reforming process starts while a vacuum atmosphere is maintained after plasma nitriding process. CONSTITUTION: A wafer of a processing object is carried into a plasma processing apparatus(S1). A plasma nitriding process is performed for a silicon oxide film on a wafer surface and a silicon oxide nitride film is formed(S2). A surface of the silicon oxide nitride film is oxidized by plasma by using the plasma processing apparatus(S3). The wafer is carried out from the plasma processing apparatus(S4).

    Abstract translation: 目的：提供一种修改绝缘膜的方法，用于控制在等离子体氮化处理之后维持真空气氛下重整过程开始时氧化硅氮化物膜中的氮浓度的小的减少。 构成：将处理对象的晶片搬入等离子体处理装置（S1）。 对晶片表面上的氧化硅膜进行等离子体氮化处理，形成氮氧化硅膜（S2）。 通过使用等离子体处理装置，氧化硅氮化物膜的表面被等离子体氧化（S3）。 晶片从等离子体处理装置（S4）进行。

    석영제부재
    8.
    发明公开
    석영제부재 有权
    QUARTZ会员

    公开(公告)号：KR1020090106439A

    公开(公告)日：2009-10-09

    申请号：KR1020090078578

    申请日：2009-08-25

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 다카하시데츠로

    IPC: H01L21/3065 ,  H01L21/02

    CPC classification number: H01J37/32238

    Abstract: PURPOSE: A quartz member is provided to perform a plasma nitriding process while generation of a particle is suppressed. CONSTITUTION: A quartz member generates plasma having high ion energy more than 5.3eV under process pressure 15Pa by using a process gas including an Ar gas and an N2 gas. The quartz member is surface-processed through the plasma, and is used in a plasma processing apparatus(100). In the plasma surface process, electron temperature of the plasma around a surface of the quartz member is more than 2eV. The plasma surface process is repeated as 25~2000 times.

    Abstract translation: 目的：提供石英构件来进行等离子体氮化处理，同时抑制颗粒的产生。 构成：石英构件通过使用包括Ar气体和N 2气体的工艺气体在15Pa的工艺压力下产生具有高于5.3eV的高离子能量的等离子体。 石英部件通过等离子体进行表面处理，并用于等离子体处理装置（100）。 在等离子体表面处理中，石英构件表面周围的等离子体的电子温度大于2eV。 等离子体表面处理重复25〜2000次。

    질소 농도의 측정 방법, 실리콘산질화막의 형성 방법 및 반도체 장치의 제조 방법
    9.
    发明公开
    질소 농도의 측정 방법, 실리콘산질화막의 형성 방법 및 반도체 장치의 제조 방법 失效
    测定氮含量的方法，形成硅氧烷膜的方法和生产半导体器件的方法

    公开(公告)号：KR1020080111140A

    公开(公告)日：2008-12-22

    申请号：KR1020087028017

    申请日：2007-05-17

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 가츠키지로 ,  다카하시데츠로 ,  이시즈카슈우이치

    IPC: H01L21/66 ,  H01L21/318 ,  H01L29/78 ,  H01L21/336

    CPC classification number: H01L22/20 ,  G06F19/00 ,  H01J37/32192 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L22/12 ,  H01L29/66621 ,  H01L29/785 ,  H01L21/02332

    Abstract: The total film thickness (T1N) of silicon oxynitride film and silicon oxide film remaining as its underlying layer is measured. Measurement object substrate is re-oxidized, and, after the re-oxidization, the total film thickness (T2N) of the silicon oxynitride film, silicon oxide film and silicon oxide film resulting from the re-oxidization on the measurement object substrate is measured. Separately, a reference substrate provided with silicon oxide film is re-oxidized, and, after the re-oxidization, the total film thickness (T2) of the silicon oxide film and silicon oxide film resulting from the re-oxidization on the reference substrate is measured. Re-oxidization rate reduction ratio (RORR) of the measurement object substrate is calculated by the following formula (1) from the values of total film thickness T1N, T2N and T2. The nitrogen content of the silicon oxynitride film of the measurement object substrate is determined from the calculated re-oxidization rate reduction ratio (RORR). RORR(%) = {(T2-T2N)/(T2-T1N)}8100 (1). ® KIPO & WIPO 2009

    Abstract translation: 测量作为其下层保留的氧氮化硅膜和氧化硅膜的总膜厚度（T1N）。 测量对象基板被再氧化，并且在再氧化之后，测量由测量对象基板上的再氧化产生的氧氮化硅膜，氧化硅膜和氧化硅膜的总膜厚度（T2N）。 另外，具有氧化硅膜的基准基板被再次氧化，再次氧化后，由于在基准基板上的再氧化而得到的氧化硅膜和氧化硅膜的总膜厚（T2）为 测量。 测量对象基板的再氧化率降低率（RORR）由总膜厚T1N，T2N和T2的值由下式（1）计算。 根据计算出的再氧化速率降低率（RORR）求出测定对象基板的氮氧化硅膜的氮含量。 RORR（％）= {（T2-T2N）/（T2-T1N）} 8100（1）。 ®KIPO＆WIPO 2009

    플라즈마 처리 장치 및 가스 통과 플레이트
    10.
    发明公开
    플라즈마 처리 장치 및 가스 통과 플레이트 无效
    等离子体处理装置和气体渗透板

    公开(公告)号：KR1020080038323A

    公开(公告)日：2008-05-06

    申请号：KR1020087002702

    申请日：2006-08-02

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 다카하시데츠로 ,  마에카와고지

    IPC: H01L21/318 ,  C23C16/455 ,  H01L21/205

    CPC classification number: H01J37/32633 ,  H01L21/318

    Abstract: A plasma processing apparatus generates plasma of a process gas in a processing chamber and performs plasma processing to a substrate. The plasma processing apparatus is provided with a gas permeable plate (60) between a plasma generating section and a susceptor (2) in the processing chamber. In the gas permeable plate (60), a through hole forming region (61) includes a region which corresponds to the substrate (W) on the susceptor (2) and an external region of such region. The through hole forming region (61) is provided with a first region (61a) which corresponds to a center portion of the substrate (W); a second region (61b) arranged on an outer circumference of the first region (61a); and a third region (61c) which is arranged on an outer circumference of the second region (61b) and includes an external region of the substrate (W). The diameter of a through hole (62a) in the first region (61a) is the smallest, and that of a through hole (62c) in the third region (61c) is the largest.

    Abstract translation: 等离子体处理装置在处理室中产生处理气体的等离子体，并对基板进行等离子体处理。 等离子体处理装置在等离子体产生部分和处理室中的基座（2）之间设置有透气板（60）。 在透气板（60）中，通孔形成区域（61）包括对应于基座（2）上的基板（W）的区域和该区域的外部区域。 通孔形成区域（61）设置有与基板（W）的中心部对应的第一区域（61a）。 布置在第一区域（61a）的外圆周上的第二区域（61b）; 以及配置在第二区域（61b）的外周并且包括基板（W）的外部区域的第三区域（61c）。 第一区域（61a）中的通孔（62a）的直径最小，第三区域（61c）中的通孔（62c）的直径最大。

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