公开(公告)号：KR1020080109888A

公开(公告)日：2008-12-17

申请号：KR1020087026344

申请日：2007-02-07

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 츠카모토유지 ,  구도야스히스 ,  하멜린토마스

IPC: H01L21/3105 ,  C23F1/00

CPC classification number: H01L21/6875

Abstract: A post-etch treatment system is described for removing photoresist and etch residue formed during an etching process. For example, the etch residue ca include halogen containing material. The post-etch treatment system comprises a vacuum chamber, a radical generation system coupled to the vacuum chamber, a radical gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a high temperature pedestal coupled to the vacuum chamber and configured to support the substrate. The high temperature pedestal comprises a scored upper surface configured to minimize substrate slippage. ® KIPO & WIPO 2009

Abstract translation: 描述了蚀刻后处理系统，用于去除蚀刻过程中形成的光致抗蚀剂和蚀刻残留物。 例如，蚀刻残渣ca包括含卤素材料。 蚀刻后处理系统包括真空室，耦合到真空室的自由基产生系统，耦合到自由基产生系统并被配置为在基板上分布反应性基团的自由基气体分配系统，以及耦合到基板的高温基座 真空室并构造成支撑基板。 高温基座包括被配置为最小化衬底滑动的刻痕上表面。 ®KIPO＆WIPO 2009