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公开(公告)号：KR1020140098390A
公开(公告)日：2014-08-08
申请号：KR1020130010936
申请日：2013-01-31
Applicant: 삼성전자주식회사
CPC classification number: H04L63/1416
Abstract: Disclosed are an attack detecting apparatus and method for detecting an attack in a network system by changing the size of a window. The attack detecting apparatus may comprise a window size changing section for changing the size of the window to be applied to traffic; and an abnormal situation detector for applying the window with the changed size to the traffic and detecting the abnormal situation of the traffic.
Abstract translation: 公开了一种通过改变窗口尺寸来检测网络系统中的攻击的攻击检测装置和方法。 攻击检测装置可以包括用于改变应用于业务的窗口的大小的窗口大小改变部分; 以及用于将具有改变的大小的窗口应用于业务并检测业务的异常情况的异常情况检测器。
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13.发明授权
公开(公告)号：KR101223498B1
公开(公告)日：2013-01-18
申请号：KR1020060128663
申请日：2006-12-15
Applicant: 삼성전자주식회사
CPC classification number: H04L9/3073
Abstract: 본 발명은 타원 곡선 암호 방식(ECC: Elliptic Curve Cryptography)에서 공개키를 생성하는 방법 및 상기 방법을 수행하는 시스템에 관한 것이다. 본 발명에 따른 타원 곡선 암호 방식(ECC: Elliptic Curve Cryptography)에서 공개키를 생성하는 방법은, 비밀키(k)를 부호가 있는 삼진수에 대한 타우-애딕(τ-adic) 형태로 변환하는 단계, 타원 곡선, 프로베니우스 맵핑(Frobenius mapping) 및 특성 방정식을 이용하여 상기 타우-애딕 형태로 변환된 비밀키의 시퀀스 길이를 감소시키는 단계 및 상기 시퀀스 길이가 감소된 비밀키에 상기 타원 곡선의 한 점(P)을 결합하여 공개키(kP)를 계산하는 단계를 포함한다.
타원 곡선 암호 방식(ECC: Elliptic Curve Cryptography), 프로베니우스 맵핑(Frobenius mapping), 코블리츠 방법(Koblitz method), 타우-애딕(τ-adic), 스플리팅 알고리즘(splitting algorithm), 공개키 암호 시스템-
公开(公告)号：KR1020110084775A
公开(公告)日：2011-07-26
申请号：KR1020100004506
申请日：2010-01-18
Applicant: 삼성전자주식회사
CPC classification number: G06F21/554 , G06F9/44521
Abstract: PURPOSE: A computer system and method are provided to monitor operation that one process dynamically connects an executable code library to the other process and to block the operation. CONSTITUTION: A computer system(100) a monitoring unit(120) and a blocking unit(130). The monitoring unit monitors operation that one process dynamically connects an executable code library to the other process. In case the operation occurs, the blocking unit blocks the connection of the executable code library. The monitoring unit comprises a call monitoring unit and a connection confirmation unit.
Abstract translation: 目的：提供一种计算机系统和方法来监视一个进程动态地将可执行代码库连接到其他进程并阻止该操作的操作。 构成：计算机系统（100），监视单元（120）和阻挡单元（130）。 监视单元监视一个进程动态地将可执行代码库连接到其他进程的操作。 在发生操作的情况下，阻塞单元阻止可执行代码库的连接。 监视单元包括呼叫监视单元和连接确认单元。
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公开(公告)号：KR1020090039549A
公开(公告)日：2009-04-22
申请号：KR1020070105262
申请日：2007-10-18
Applicant: 삼성전자주식회사
CPC classification number: H04L9/3271 , H04L2209/08 , H04L2209/805
Abstract: A tag authentication method using the rotation and a tag and a reader for executing the method are provided to completely synchronize the leader and the tag by using the rotation factor and the rotation function. A tag authentication method using the rotation is as follows. A reader produces the first random number as the challenge(S301). A tag produces the second random number as the blinding factor(S302). The first random number is transmitted to the tag by the reader(S303). The tag produces the rotation factor by using the first random number and the first secrete value(S304). The tag calculates the first verification value based on the second random number, the second secrete value, and the rotation factor(S305). The tag transmits the first verification value and the second random number generated as the blinding factor to the reader(S306). The reader produces the rotation factor by using the second random number and the first secrete value(S307). The reader calculates the second verification value based on the first random number, the second secrete value, and the rotation factor(S308). The first verification value and the second verification value are compared by the reader(S309).
Abstract translation: 提供使用旋转的标签认证方法和用于执行该方法的标签和读取器，以通过使用旋转因子和旋转功能来完全同步领导者和标签。 使用旋转的标签认证方法如下。 读取器产生第一个随机数作为挑战（S301）。 标签产生第二随机数作为盲目因子（S302）。 第一随机数由读取器发送到标签（S303）。 标签通过使用第一随机数和第一分离值产生旋转因子（S304）。 标签基于第二随机数，第二分泌值和旋转因子计算第一验证值（S305）。 标签将作为盲目因素生成的第一验证值和第二随机数发送到读取器（S306）。 读取器通过使用第二随机数和第一分离值产生旋转因子（S307）。 读取器基于第一随机数，第二分泌值和旋转因子计算第二验证值（S308）。 第一验证值和第二验证值由读取器进行比较（S309）。
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Patent Agency Ranking16.发明公开
公开(公告)号：KR1020080055378A
公开(公告)日：2008-06-19
申请号：KR1020060128663
申请日：2006-12-15
Applicant: 삼성전자주식회사
CPC classification number: H04L9/3073
Abstract: A method for generating a public key in an elliptic curve cryptography and a system for executing the same are provided to generate an optimized public key by applying a splitting algorithm to a public key calculated through a private key where sequence length is reduced. A method for generating a public key in an elliptic curve cryptography includes the steps of: transforming a private key in a tau-adic pattern for a triple number having a sign(S401); reducing the sequence length of the private key transformed in the tau-adic pattern by using an elliptic curve, Frobenius mapping, and a characteristic equation(S402); and calculating a public key by joining one point to the private key having the reduced sequence length(S403).
Abstract translation: 提供了一种用于在椭圆曲线密码术中生成公开密钥的方法和用于执行该公钥的系统，以通过将分割算法应用于通过减少序列长度的私钥计算的公钥来生成优化的公钥。 一种用于在椭圆曲线密码术中生成公开密钥的方法包括以下步骤：以具有符号的三重号码的tau-adic模式转换私钥（S401）; 通过使用椭圆曲线Frobenius映射和特征方程来减少在tau-adic模式中转换的私钥的序列长度（S402）; 以及通过将一个点连接到具有减小的序列长度的私钥来计算公开密钥（S403）。
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公开(公告)号：KR1020010095837A
公开(公告)日：2001-11-07
申请号：KR1020000019255
申请日：2000-04-12
Applicant: 삼성전자주식회사
IPC: H01L21/027
Abstract: PURPOSE: A phase shift mask for controlling transmissivity of a wavelength using an energy trap and a method for manufacturing the same are provided to form a phase shifter material of high transmissivity with a wavelength longer than an exposure light with a short wavelength. CONSTITUTION: An energy trap is formed around the energy level of a test light having a wavelength longer than the wavelength of an exposure light by using a semitransparent phase shift material for an exposure light with a predetermined wavelength as a main material on a transparent substrate. A phase shift layer is formed by adding a material for reducing transmissivity of the test light. A shielding layer is formed on the phase shift layer in order to shield the exposure light. The main of the phase shift material includes Cr, Al, and O. Er is used as the material for forming the energy trap around wavelength of the test light.
Abstract translation: 目的：提供一种用于控制使用能量阱的波长透射率的相移掩模及其制造方法，以形成具有比具有短波长的曝光光的波长更长的高透射率的移相器材料。 构成：通过在透明基板上使用具有预定波长的曝光光作为主要材料的半透射相移材料，围绕具有比曝光光的波长更长的波长的测试光的能量水平形成能量阱。 通过添加用于降低测试光的透射率的材料来形成相移层。 为了屏蔽曝光光，在相移层上形成屏蔽层。 相移材料的主要材料包括Cr，Al和O.Er被用作围绕测试光的波长形成能量阱的材料。
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公开(公告)号：KR100253087B1
公开(公告)日：2000-04-15
申请号：KR1019970039308
申请日：1997-08-19
Applicant: 삼성전자주식회사
IPC: H01L21/304
CPC classification number: H01L21/02071 , H01L21/02063
Abstract: PURPOSE: A method for manufacturing semiconductor devices is provided to reduce the fabrication time and increase the cleaning efficiency to increase productivity and reliability. CONSTITUTION: The method for manufacturing semiconductor devices comprises removing a predetermined region of the photoresist remaining on a semiconductor substrate(10) using a dry etching process. The dry etching process applies a mixture of nitrogen and oxygen gases. Preferably, the dry etching process is carried out between 50 to 3,600 seconds. After the well is formed and the photoresist is removed from the substrate(10), the substrate is cleaned using a cleaning composition. The cleaning composition comprises 25 to 35 weight percent isopropyl alcohol(IPA), 2.0 to 4.0 weight percent hydrogen peroxide(H2O2), 0.05 to 0.25 weight percent hydrofluoric acid(HF), and a remaining weight percent deionized water. Preferably, the cleaning composition includes deionized water, 100 percent of IPA, 30 percent of H2O2, and 50 percent of HF mixed in order. Additionally, the cleaning composition is preferably applied at a temperature between 20 to 30 deg.C.
Abstract translation: 目的：提供一种制造半导体器件的方法，以减少制造时间并提高清洁效率，从而提高生产率和可靠性。 构成：半导体器件的制造方法包括使用干蚀刻工艺去除保留在半导体衬底（10）上的光致抗蚀剂的预定区域。 干蚀刻工艺应用氮气和氧气的混合物。 优选地，干蚀刻处理在50至3600秒之间进行。 在形成阱并从衬底（10）去除光致抗蚀剂之后，使用清洁组合物清洁衬底。 清洁组合物包含25至35重量％的异丙醇（IPA），2.0至4.0重量％的过氧化氢（H 2 O 2），0.05至0.25重量％的氢氟酸（HF）和剩余重量百分比的去离子水。 优选地，清洁组合物包括去离子水，100％的IPA，30％的H 2 O 2和50％的HF按顺序混合。 此外，清洁组合物优选在20〜30℃的温度下进行。
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公开(公告)号：KR100252212B1
公开(公告)日：2000-04-15
申请号：KR1019970011899
申请日：1997-03-31
Applicant: 삼성전자주식회사
IPC: H01L21/306
CPC classification number: H01L21/31111
Abstract: PURPOSE: An etch composition and a method for etching a silicon nitride film are provided to be capable of rapidly and easily etching a silicon nitride film. CONSTITUTION: An etch composition comprises fluorine acid of 10 - 90 weight% and phosphoric acid salt solution of 10 - 90 weight%. A method for etching a silicon nitride film injects a wafer for manufacturing semiconductor devices in which a silicon nitride film is formed into an etch chamber containing the etch composition comprising fluorine acid and phosphoric acid salt solution and heats/vaporizes the etch composition to expose the wafer to the etch composition so that the silicon nitride film can be etched.
Abstract translation: 目的：提供蚀刻组合物和蚀刻氮化硅膜的方法，以能够快速且容易地蚀刻氮化硅膜。 构成：蚀刻组合物包含10-90重量％的氟酸和10-90重量％的磷酸盐溶液。 用于蚀刻氮化硅膜的方法将用于制造其中形成氮化硅膜的半导体器件的晶片注入包含含有氟酸和磷酸盐溶液的蚀刻组合物的蚀刻室中，并加热/蒸发蚀刻组合物以暴露晶片 蚀刻组合物，使得可以蚀刻氮化硅膜。
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公开(公告)号：KR1019990033658A
公开(公告)日：1999-05-15
申请号：KR1019970055074
申请日：1997-10-25
Applicant: 삼성전자주식회사
IPC: H01L21/304
Abstract: 본 발명은 반도체장치 제조용 케미컬배스에 관한 것이다.
본 발명은, 반도체장치의 제조공정에 이용되는 케미컬을 수용하는 배스부; 상기 배스부가 밀폐되도록 상기 배스부의 상부에 구비되는 실링부; 상기 배스부에 케미컬을 공급하도록 상기 실링부를 관통하여 상기 배스부의 저면까지로 연장시켜 구비되는 케미컬공급라인; 상기 배스부에 수용되는 케미컬 등에서 발생하는 가스가 외부로 배기되도록 상기 실링부에 구비되는 배기부; 및 상기 배기부가 저온상태를 유지할 수 있도록 상기 배기부의 주변에 구비되어 냉각수를 공급하는 냉각수공급라인을 구비하여 이루어짐을 특징으로 한다.
따라서, 배스부를 밀폐시킴으로써 안정성을 확보할 수 있고, 케미컬이 자연적으로 감소되는 것을 방지할 수 있으며, 또한 케미컬의 농도변화로 인한 불량 등을 방지할 수 있어 생산성이 향상되는 효과가 있다.
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