公开(公告)号：KR101240558B1

公开(公告)日：2013-03-06

申请号：KR1020070112313

申请日：2007-11-05

Applicant: 삼성전자주식회사

Inventor： 조수행 ,  하경호 ,  유한열 ,  서성동 ,  김성구 ,  민복기

IPC: G02B6/43

CPC classification number: G02B6/43 ,  H01L2224/05554 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/00

Abstract: 본 발명은 광 연결 수단을 구비한 멀티칩에 관하여 개시한다. 개시된 광 연결 수단을 구비한 멀티칩은, 평행하게 적층된 복수의 실리콘 칩, 상기 각 실리콘 칩의 측면에 서로 대응되게 각각 접착되며, 각각 발광소자 및/또는 수광소자를 구비하는 복수의 광소자 어레이, 상기 실리콘 칩과 상기 실리콘 칩의 측면에 설치된 상기 광소자 어레이를 연결하는 배선을 구비한다. 상기 광소자 어레이들은 복층으로 형성되어서 서로 다른 층의 대응되는 광소자 사이의 광신호를 송수신한다.

公开(公告)号：KR1020080037848A

公开(公告)日：2008-05-02

申请号：KR1020060105042

申请日：2006-10-27

Applicant: 삼성전자주식회사

Inventor： 유한열 ,  하경호 ,  성연준

IPC: H01S3/0941 ,  H01S5/00

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01S5/0213 ,  H01S5/0286 ,  H01S5/2027 ,  H01S5/22 ,  H01S2301/18

Abstract: A manufacturing method of a semiconductor laser element having a light-blocking film is provided to simplify a manufacturing process by laminating the light-blocking film and a protective film and removing a part of the light-blocking film and the protective layer without a specific masking. A manufacturing method of a semiconductor laser element having a light-blocking film comprises the following steps of: forming a light emitting structure by sequentially laminating material layers including a first clad layer, an active layer(130), and a second clad layer on a substrate(110); laminating the light-blocking film(200) and a protective film(300) sequentially on a light emitting surface(101) of the light emitting structure; removing the light-blocking film positioned on the first clad layer and on the upper parts of the first clad layer using a first etchant having the selective etching performance for the light-blocking film; and removing the protective film.

Abstract translation: 提供具有遮光膜的半导体激光元件的制造方法，以通过层压遮光膜和保护膜来简化制造工艺，并且在没有特定掩蔽的情况下去除一部分遮光膜和保护层 。 具有遮光膜的半导体激光元件的制造方法包括以下步骤：通过在第一覆层，有源层（130）和第二覆层上依次层叠材料层，形成发光结构 衬底（110）; 在所述发光结构的发光面（101）上依次层叠所述遮光膜（200）和保护膜（300） 使用具有对于遮光膜的选择性蚀刻性能的第一蚀刻剂去除位于第一覆盖层上的遮光膜和第一覆盖层的上部; 并去除保护膜。

公开(公告)号：KR1020070084725A

公开(公告)日：2007-08-27

申请号：KR1020060016865

申请日：2006-02-21

Applicant: 삼성전자주식회사

Inventor： 채정혜 ,  심종인 ,  하경호 ,  김규상 ,  유한열

IPC: H01S5/22

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/34333

Abstract: A semiconductor laser diode having a ridge is provided to prevent local heating by controlling a current crowding effect. A semiconductor laser diode having a ridge includes a substrate(20), a first semiconductor layer(22), an active layer(24), a second semiconductor layer(26), and an electrode(29). The first semiconductor layer(22), the active layer(24), the second semiconductor layer(26), and the electrode(29) are sequentially formed on the substrate(20). The second semiconductor(26) has a ridge structure. The electrode(29) is formed to have less width than the ridge of the second semiconductor(26). A center of the width of the electrode(29) is not identical with that of the width of the ridge.

Abstract translation: 提供具有脊的半导体激光二极管，以通过控制电流拥挤效果来防止局部加热。 具有脊的半导体激光二极管包括衬底（20），第一半导体层（22），有源层（24），第二半导体层（26）和电极（29）。 第一半导体层（22），有源层（24），第二半导体层（26）和电极（29）依次形成在基板（20）上。 第二半导体（26）具有脊结构。 电极（29）形成为具有比第二半导体（26）的脊宽小的宽度。 电极（29）的宽度的中心与脊的宽度的中心不同。

公开(公告)号：KR101274206B1

公开(公告)日：2013-06-14

申请号：KR1020060016865

申请日：2006-02-21

Applicant: 삼성전자주식회사

Inventor： 채정혜 ,  심종인 ,  하경호 ,  김규상 ,  유한열

IPC: H01S5/22

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/34333

Abstract: 기판상에순차적으로형성된제1반도체층, 활성층, 제2반도체층및 전극을포함하는반도체레이저다이오드가개시되어있다. 개시된반도체레이저다이오드에서, 제2반도체층은리지구조를가지며, 전극은제2반도체층의리지구조상에리지의폭보다작은폭을가지도록형성된다.

Abstract translation: 提供一种半导体激光二极管，其包括基板，以及顺序地形成在基板上的第一半导体层，有源层，第二半导体层和电极。 在半导体激光二极管中，第二半导体层具有脊，电极形成在第二半导体层的脊上，宽度小于脊的宽度。

公开(公告)号：KR1020090067548A

公开(公告)日：2009-06-25

申请号：KR1020070135240

申请日：2007-12-21

Applicant: 삼성전자주식회사

Inventor： 서성동 ,  하경호 ,  조수행 ,  유한열

IPC: G02B6/28 ,  G02B6/26

Abstract: A signal distribution network having an optical directional coupler is provided to transmit an optical signal without the loss of the power by selecting one output unit among a plurality of output units. A signal distribution network(100) having an optical directional coupler includes one input unit(110) and a plurality of output units. A plurality of output units include a main output unit(130) and a plurality of sub output units(140). The main optical wave guide is connected between the input unit and the main output unit. The plurality of sub output units are arranged between the input unit and the main output unit. A plurality of optical directional couplers(160) selectively output the optical signal inputted to the input unit to a sub output unit. The optical directional coupler includes a sub optical wave guide, a first electrode, and a second electrode. The sub optical wave guide includes a parallel part adjacent to the main optical wave guide in a predetermined region.

Abstract translation: 提供具有光学定向耦合器的信号分配网络，以通过在多个输出单元中选择一个输出单元来传输光信号而不损失功率。 具有光学定向耦合器的信号分配网络（100）包括一个输入单元（110）和多个输出单元。 多个输出单元包括主输出单元（130）和多个子输出单元（140）。 主光波导连接在输入单元和主输出单元之间。 多个子输出单元布置在输入单元和主输出单元之间。 多个光学定向耦合器（160）选择性地将输入到输入单元的光信号输出到子输出单元。 光学定向耦合器包括副光波导，第一电极和第二电极。 副光波导包括在预定区域中与主光波导相邻的平行部分。

公开(公告)号：KR1020080048318A

公开(公告)日：2008-06-02

申请号：KR1020060118565

申请日：2006-11-28

Applicant: 삼성전자주식회사

Inventor： 유한열 ,  성연준 ,  심종인

IPC: H01S5/00 ,  H01L33/02

CPC classification number: H01S5/22 ,  H01S5/0207 ,  H01S5/2004 ,  H01S5/3211 ,  H01S5/32341 ,  H01S2301/18

Abstract: A semiconductor laser element having a scattering part and a manufacturing method thereof are provided to reduce ripples of a far field pattern of a laser beam by forming a scattering part on a bottom surface of a substrate. A semiconductor laser element includes a substrate(110), a light emitting structure, and a scattering part(200). The light emitting structure is formed by stacking a first clad layer(121), an active layer(130), and a second clad layer(142) sequentially. The scattering part is formed on a bottom surface of the substrate. The semiconductor laser element further includes an n-electrode which is formed on a bottom surface of the substrate. The n-electrode is positioned on a predetermined region except for a region on which the scattering part is formed. A ridge wave guide(170) is protruded from a part of the second clad layer. The width of the scattering part is equal to and more than the width of the ridge waveguide.

Abstract translation: 提供具有散射部分的半导体激光元件及其制造方法，以通过在基板的底面上形成散射部来减少激光束的远场图案的波纹。 半导体激光元件包括衬底（110），发光结构和散射部（200）。 发光结构通过依次堆叠第一覆盖层（121），有源层（130）和第二覆盖层（142）而形成。 散射部分形成在基板的底表面上。 半导体激光元件还包括形成在基板的底表面上的n电极。 n电极位于除了形成有散射部的区域之外的预定区域上。 脊形波导（170）从第二包覆层的一部分突出。 散射部的宽度等于并且大于脊形波导的宽度。

公开(公告)号：KR1020080035865A

公开(公告)日：2008-04-24

申请号：KR1020060102465

申请日：2006-10-20

Applicant: 삼성전자주식회사

Inventor： 유한열

IPC: H01L33/06

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L33/32

Abstract: A semiconductor light emitting device is provided to improve light emitting efficiency due to the decrease of an optical absorption between quantum well layers by using the quantum well layers having an energy band gap being increased/decreased from a p-type contact layer to an n-type contact layer. A semiconductor light emitting device includes an n-type contact layer(200) formed on a substrate(100), an active layer(250) formed on the n-type contact layer and comprised of quantum well layers(QW1,QW2,QW3) and barrier layers(B1,B2,B3,B4), and a p-type contact layer(400) formed on the active layer. An energy band gap of the respective quantum well layers is increased from the p-type contact layer to the n-type contact layer. The quantum well layer is a InxGa1-xN layer(0.05 x 0.5). The content of indium in the quantum well layer is progressively decreased toward the n-type contact layer. A thickness of the respective quantum well layers is decreased from the p-type contact layer to the n-type contact layer.

Abstract translation: 提供了一种半导体发光器件，用于通过使用从p型接触层向n型电极增加/减少的能带隙的量子阱层，由于量子阱层之间的光吸收的减小而提高了发光效率。 型接触层。 一种半导体发光器件，包括形成在衬底（100）上的n型接触层（200），形成在n型接触层上的有源层（250），包括量子阱层（QW1，QW2，QW3） 和阻挡层（B1，B2，B3，B4）以及形成在有源层上的p型接触层（400）。 各量子阱层的能带隙从p型接触层增加到n型接触层。 量子阱层是In x Ga 1-x N层（0.05×0.5）。 量子阱层中铟的含量逐渐减少到n型接触层。 各量子阱层的厚度从p型接触层减小到n型接触层。

公开(公告)号：KR1020060109112A

公开(公告)日：2006-10-19

申请号：KR1020050031407

申请日：2005-04-15

Applicant: 삼성전자주식회사

Inventor： 사공탄 ,  장태훈 ,  손중곤 ,  유한열

IPC: H01S5/22 ,  H01S5/024 ,  H01S5/30

CPC classification number: H01S5/2231 ,  H01S5/0422 ,  H01S5/221 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/32341 ,  H01S2304/04

Abstract: A semiconductor laser diode having a ridge portion and a method of fabricating the same are provided to suppress multi transverse mode vibration by using an AlGaInN buried layer. In a semiconductor laser diode, a first clad layer is a first conductive type. An active layer(28) is placed on the first clad layer. A second clad layer is formed on the active layer(28) and has a stripe-shaped ridge unit at the upper part thereof. A buried layer(36) is made of AlGaInN, and is grown in a region except for the upper part of the second clad layer.

Abstract translation: 提供具有脊部分的半导体激光二极管及其制造方法，以通过使用AlGaInN掩埋层来抑制多横模振动。 在半导体激光二极管中，第一覆盖层是第一导电类型。 有源层（28）被放置在第一覆层上。 第二覆盖层形成在有源层（28）上，并且在其上部具有条状脊单元。 掩埋层（36）由AlGaInN制成，并且在除了第二覆盖层的上部之外的区域中生长。

公开(公告)号：KR1020090076601A

公开(公告)日：2009-07-13

申请号：KR1020080002640

申请日：2008-01-09

Applicant: 삼성전자주식회사

Inventor： 유한열 ,  하경호

IPC: H01L31/10 ,  H01S5/183

CPC classification number: H01L31/125 ,  H01L24/14 ,  H01L31/0203 ,  H01L31/0304 ,  H01L31/105 ,  H01L31/184 ,  H01L2224/16225 ,  H01L2924/12043 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/02284 ,  H01S5/0262 ,  H01S5/18305 ,  H01S2301/176 ,  Y02E10/544 ,  Y02P70/521 ,  H01L2924/00

Abstract: A light transmitting and receiving device and a manufacturing method thereof are provided, which can send and receive the light bidirectionally. A light transmitting and receiving device(100) comprises the laser diode(120) and photo diode(130). The laser diode is formed in the top of the substrate. The photo diode comprises the aperture which is the exit of the light from the laser diode while being formed on the laser diode. A plurality of electrode pads(113,114,115) are connected to the electrode for the laser diode and photo diode on the top of the substrate. The optical output direction is different from the bonding direction of the laser diode and the substrate. The laser diode is the bottom emitting structure. The laser diode is the vertical cavity surface emitting laser.

Abstract translation: 提供了一种可以双向发送和接收光的光发射和接收装置及其制造方法。 光发射和接收装置（100）包括激光二极管（120）和光电二极管（130）。 激光二极管形成在基板的顶部。 光电二极管包括作为在激光二极管上形成时来自激光二极管的光的出口的孔。 多个电极焊盘（113,114,115）连接到基板顶部的激光二极管和光电二极管的电极。 光输出方向与激光二极管和基板的接合方向不同。 激光二极管是底部发射结构。 激光二极管是垂直腔表面发射激光器。

公开(公告)号：KR1020090076600A

公开(公告)日：2009-07-13

申请号：KR1020080002639

申请日：2008-01-09

Applicant: 삼성전자주식회사

Inventor： 유한열 ,  서성동 ,  하경호 ,  김성구

IPC: G02B6/12 ,  G02B6/42

CPC classification number: H04B10/2504

Abstract: An optical interconnection system transmitting and receiving 3-level signal is provided to receive and transmit 3-level electrical signal by using improved mixer. An optical transceiver comprises a first light transmitter and a receiver(110), a second optical transceiver(120), and a mixer(140). The first and the second optical transceiver send and receive 2- step signal, and the mixer combines a signal from the optical transceivers and one 3-lelvel signal. The optical transceiver comprises a lighting-emitting area driving part, a lighting-emitting area, an optical waveguide, a photo diode, and a photo diode driving part.

Abstract translation: 提供发射和接收3电平信号的光互连系统，通过使用改进的混频器来接收和发送3电平电信号。 光收发器包括第一光发射器和接收器（110），第二光收发器（120）和混频器（140）。 第一和第二光收发器发送和接收2-步信号，并且混频器组合来自光收发器的信号和一个3-lelvel信号。 光收发器包括发光区域驱动部分，发光区域，光波导，光电二极管和光电二极管驱动部分。