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公开(公告)号：KR1020130085763A
公开(公告)日：2013-07-30
申请号：KR1020120006808
申请日：2012-01-20
Applicant: 삼성전자주식회사
CPC classification number: H01S5/18358 , H01S5/021 , H01S5/0215 , H01S5/02248 , H01S5/026 , H01S5/1032 , H01S5/105 , H01S5/18325 , H01S5/18341 , H01S5/18361 , H01S5/1838 , H01S5/2018 , H01S5/2031
Abstract: PURPOSE: Hybrid light sources for a photonic integrated circuit are provided to increase a coupling efficiencies of resonance modes of resonators and/or waveguide modes of optical waveguides. CONSTITUTION: A light source (10) for a photonic integrated circuit comprises a reflection coupling layer (20), an optical mode alignment layer (50), and an upper structure (70). The reflection coupling layer is formed on a substrate in which an optical waveguide is provided, and at least one side of the reflection coupling layer is optically connected to the optical waveguide. The optical mode alignment layer is provided on the reflection coupling layer. The upper structure is provided on the optical mode alignment layer and includes an active layer for generating light and a refection layer on the active layer. The optical mode alignment layer comprises a higher refractive index area arranged at a center portion and a lower refractive index area arranged around the higher refractive index area.
Abstract translation: 目的：提供用于光子集成电路的混合光源，以增加光波导的谐振器和/或波导模式的谐振模式的耦合效率。 构成：用于光子集成电路的光源（10）包括反射耦合层（20），光学模式对准层（50）和上部结构（70）。 反射耦合层形成在其中设置有光波导的基板上，反射耦合层的至少一侧与光波导光学连接。 光学对准层设置在反射耦合层上。 上部结构设置在光学模式对准层上，并且包括在活性层上产生光的有源层和反射层。 光学模式对准层包括布置在中心部分处的较高折射率区域和布置在较高折射率区域周围的较低折射率区域。
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公开(公告)号：KR1020130003871A
公开(公告)日：2013-01-09
申请号：KR1020110065485
申请日：2011-07-01
Applicant: 삼성전자주식회사
IPC: G02B6/12
CPC classification number: G02B6/12016 , G02B6/122 , G02B6/4214 , G02B6/428
Abstract: PURPOSE: A light source of an optical integrated circuit is provided to increase coupling efficiency. CONSTITUTION: A light source of an optical integrated circuit includes a light emitting unit(130) and a waveguide(140). The light emitting unit emits light. The waveguide equipped in one side of the light emitting unit guides the light.
Abstract translation: 目的：提供光集成电路的光源，以提高耦合效率。 构成：光集成电路的光源包括发光单元（130）和波导（140）。 发光单元发光。 配置在发光单元的一侧的波导引导光。
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公开(公告)号：KR1020110061910A
公开(公告)日：2011-06-10
申请号：KR1020090118452
申请日：2009-12-02
Applicant: 삼성전자주식회사
CPC classification number: H01L33/60 , H01L33/007 , H01L33/10 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/46 , H01L2933/0016
Abstract: PURPOSE: A light emitting device and manufacturing method thereof are provided to have a reflecting layer embedded pattern, thereby increasing light emitting efficiency. CONSTITUTION: An uneven pattern includes a plurality of grooves and a mesa located between the grooves. A first reflective film(23) is included on a side of a groove. An n-type clad layer is placed on the uneven pattern. An active layer(35) is placed on the n-type clad layer. A p-type cladding layer is placed on the active layer. A first electrode is placed on one side of a substrate. A second electrode is placed on one side of the p-type cladding layer. A buffer layer(25) is placed on the mesa and the first reflective film.
Abstract translation: 目的：提供发光器件及其制造方法以具有反射层嵌入图案，从而提高发光效率。 构成：凹凸图案包括多个凹槽和位于凹槽之间的台面。 第一反射膜（23）包括在凹槽的一侧。 在不均匀图案上放置n型覆盖层。 有源层（35）被放置在n型覆层上。 p型包覆层放置在有源层上。 第一电极放置在基板的一侧。 第二电极放置在p型覆层的一侧。 缓冲层（25）放置在台面和第一反射膜上。
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公开(公告)号：KR1020110021406A
公开(公告)日：2011-03-04
申请号：KR1020090079189
申请日：2009-08-26
Applicant: 삼성전자주식회사
CPC classification number: H01L33/007 , B82Y20/00 , H01L33/0075 , H01L33/12 , H01L33/32 , H01L33/46 , H01L2933/0025 , Y10S977/893 , Y10S977/95
Abstract: PURPOSE: A light emitting apparatus and a manufacturing method thereof are provided to improve the light extraction efficiency by reducing the light absorption of a silicon substrate by comprising a reflective buffer layer including a distributed brag reflection layer. CONSTITUTION: A metallic buffer layer(132) is formed on a silicon substrate(110). A patterned distributed Brag reflector layer(134) is formed on the metallic buffer layer. The metallic buffer layer is patterned in the same pattern as the distributed Bragg reflector layer. An XY material layer(136) is formed on the patterned distributed Bragg reflector layer.
Abstract translation: 目的：提供一种发光装置及其制造方法，通过包括具有分散式吹塑反射层的反射缓冲层，通过降低硅衬底的光吸收来提高光提取效率。 构成：在硅衬底（110）上形成金属缓冲层（132）。 在金属缓冲层上形成图形分布的布拉格反射层（134）。 金属缓冲层以与分布式布拉格反射层相同的图案形成图案。 在图案化分布式布拉格反射层上形成XY材料层（136）。
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公开(公告)号：KR1020090107254A
公开(公告)日：2009-10-13
申请号：KR1020080032660
申请日：2008-04-08
Applicant: 삼성전자주식회사
IPC: H04N5/369
CPC classification number: H01L27/14679 , H01L27/14609 , H04N5/335 , H04N5/3355
Abstract: PURPOSE: An image sensor using a binary photo signal and a method of operating the same are provided to output a binary signal about strength of light in one cell region. CONSTITUTION: An image sensor using a binary photo signal includes a micro lens and a floating body transistor(10). The micro lens includes unit pixels arranged in an array type. The unit pixel corresponds to a color filter. The floating body transistor is formed in a lower part of each color filter corresponding to each color filter. The floating body transistor includes a source area, a drain area, a floating body area and a gate electrode. The floating body area is positioned between the source area and the drain area. The gate electrode is formed on the floating body area.
Abstract translation: 目的：提供使用二进制光信号的图像传感器及其操作方法，以输出关于一个单元区域中的光强度的二进制信号。 构成：使用二进制光信号的图像传感器包括微透镜和浮体晶体管（10）。 微透镜包括排列成阵列型的单位像素。 单位像素对应于滤色器。 浮体晶体管形成在与每个滤色器对应的每个滤色器的下部中。 浮体晶体管包括源区，漏区，浮体区和栅电极。 浮体区域位于源区域和排水区域之间。 栅电极形成在浮体区域上。
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Patent Agency Ranking
公开(公告)号：KR1020130048629A
公开(公告)日：2013-05-10
申请号：KR1020110113584
申请日：2011-11-02
Applicant: 삼성전자주식회사
CPC classification number: H01L31/09 , G02B6/4202 , H01L31/028 , H01L31/036 , Y02E10/547
Abstract: PURPOSE: A waveguide-integrated graphene photo-detector is provided to improve a light absorption rate and the sensitivity of a photo-detector by forming graphene in the center of the photo-detection part. CONSTITUTION: An oxide layer(112) is formed on a substrate(110). A waveguide(120) is formed on the oxide layer. A light detection part(130) touches the waveguide. The light detection part includes a first ridge part, graphene(133), a second ridge part(135), a first electrode(141), and a second electrode(142). The second ridge part faces the first ridge part on the graphene.
Abstract translation: 目的：提供一种波导集成石墨烯光电检测器，通过在光检测部分的中心形成石墨烯来提高光检测器的光吸收率和灵敏度。 构成：在衬底（110）上形成氧化物层（112）。 在氧化物层上形成波导（120）。 光检测部（130）接触波导。 光检测部分包括第一脊部，石墨烯（133），第二脊部（135），第一电极（141）和第二电极（142）。 第二脊部面向石墨烯上的第一脊部。
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公开(公告)号：KR1020120010437A
公开(公告)日：2012-02-03
申请号：KR1020100071976
申请日：2010-07-26
Applicant: 삼성전자주식회사
CPC classification number: H01L33/0066 , H01L33/0075 , H01L33/0079 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/382 , H01L33/405 , H01L2933/0016
Abstract: PURPOSE: A light emitting device and a method of manufacturing the same are provided to increase light extraction efficiency by reducing the total reflection in the interface with outside. CONSTITUTION: In a light emitting device and a method of manufacturing the same, a metal layer(120) is formed on a substrate(110). A second type semiconductor layer(140) is formed on the metal layer. An active layer(150) is formed on the second type semiconductor layer. A first type semiconductor layer(160) is formed on the active layer. An output pattern layer(180) is formed on the first type semiconductor layer. An output pattern layer comprises an AlGaN layer(181) and an AlN layer(189).
Abstract translation: 目的：提供一种发光器件及其制造方法，以通过减少与外界面的全反射来提高光提取效率。 构成：在发光器件及其制造方法中，在衬底（110）上形成金属层（120）。 在金属层上形成第二类型的半导体层（140）。 在第二类型半导体层上形成有源层（150）。 在有源层上形成第一类型的半导体层（160）。 输出图案层（180）形成在第一类型半导体层上。 输出图案层包括AlGaN层（181）和AlN层（189）。
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公开(公告)号：KR1020100011291A
公开(公告)日：2010-02-03
申请号：KR1020080072438
申请日：2008-07-24
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L27/14643 , B82Y20/00 , B82Y30/00 , H01L27/14625
Abstract: PURPOSE: An image sensor having a light focusing structure is provided to focus in on a wide photoelectric conversion area by including a metal nano dot on a submicron sized floating body. CONSTITUTION: A plurality of pixel units are arranged in an array shape. A pixel unit comprises a first area(112) and a second area(114) in which materials having different polarities are doped. A photoelectric conversion region(116) is formed between the first area and the second area. At least one metal nano-dot(120) focuses incoming light on the photoelectric conversion region. The metal nano-dot is arranged on the semiconductor layer(110).
Abstract translation: 目的：提供具有光聚焦结构的图像传感器，通过在亚微米尺寸的浮体上包括金属纳米点来聚焦在宽的光电转换区域上。 构成：多个像素单元被布置成阵列形状。 像素单元包括其中掺杂有不同极性的材料的第一区域（112）和第二区域（114）。 在第一区域和第二区域之间形成光电转换区域（116）。 至少一个金属纳米点（120）将入射光聚焦在光电转换区域上。 金属纳米点布置在半导体层（110）上。
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公开(公告)号：KR101650840B1
公开(公告)日：2016-08-24
申请号：KR1020090079189
申请日：2009-08-26
Applicant: 삼성전자주식회사
CPC classification number: H01L33/007 , B82Y20/00 , H01L33/0075 , H01L33/12 , H01L33/32 , H01L33/46 , H01L2933/0025 , Y10S977/893 , Y10S977/95
Abstract: 발광소자및 이의제조방법이개시된다. 개시된발광소자는실리콘기판; 상기실리콘기판상에형성된것으로, 금속성버퍼층과패턴된분산브래그반사층을포함하는반사버퍼층; 상기반사버퍼층위에형성된 GaN 기반의발광구조층;을포함한다.
Abstract translation: 公开了一种发光器件及其制造方法。 所公开的发光器件包括硅衬底; 形成在所述硅衬底上的反射缓冲层，所述反射缓冲层包括金属缓冲层和图案化的分散布拉格反射层; 并且在反射缓冲层上形成GaN基发光结构层。
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公开(公告)号：KR101240558B1
公开(公告)日：2013-03-06
申请号：KR1020070112313
申请日：2007-11-05
Applicant: 삼성전자주식회사
IPC: G02B6/43
CPC classification number: G02B6/43 , H01L2224/05554 , H01L2224/48137 , H01L2224/49175 , H01L2924/00
Abstract: 본 발명은 광 연결 수단을 구비한 멀티칩에 관하여 개시한다. 개시된 광 연결 수단을 구비한 멀티칩은, 평행하게 적층된 복수의 실리콘 칩, 상기 각 실리콘 칩의 측면에 서로 대응되게 각각 접착되며, 각각 발광소자 및/또는 수광소자를 구비하는 복수의 광소자 어레이, 상기 실리콘 칩과 상기 실리콘 칩의 측면에 설치된 상기 광소자 어레이를 연결하는 배선을 구비한다. 상기 광소자 어레이들은 복층으로 형성되어서 서로 다른 층의 대응되는 광소자 사이의 광신호를 송수신한다.
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