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公开(公告)号：KR1020170047655A
公开(公告)日：2017-05-08
申请号：KR1020150148025
申请日：2015-10-23
Applicant: 삼성전자주식회사
CPC classification number: G11C16/3459 , G06F11/1068 , G11C16/08 , G11C16/10 , G11C16/26 , G11C29/52
Abstract: 본개시에따른메모리장치는메모리셀들을포함하는메모리셀 어레이, 메모리셀들에대한검증독출결과에따른페이지버퍼신호들을생성하는페이지버퍼그룹, 제1 기준전류를기초로페이지버퍼신호들로부터페일비트개수에대응하는디코더출력신호를생성하는페이지버퍼디코딩부, 제1 기준전류의 M배(M은양의정수)에대응하는제2 기준전류를기초로디코더출력신호로부터페일비트개수에대응하는카운트결과를출력하는슬로우비트카운터, 그리고, 카운트결과를기초로메모리셀들에대한프로그램패스여부를판단하여패스신호또는페일신호를출력하는패스/페일체킹부를포함한다.
Abstract translation: 根据本发明的存储器装置是根据用于存储器单元缓冲器组验证读取结果从所述存储单元阵列中，页面生成页缓冲器信号失败位，基于包括所述存储器单元中的第一参考电流缓冲信号页 计数结果对应于从基于对应于所述解码器输出的第二参考电流的解码器输出信号中的故障位的数字信号的页缓冲器解码器，用于产生第一第一参考电流的M倍（M从eunyang的整数）相对应的数 并且它输出慢位计数器包括在内，并且基于计数结果来确定程序是否通过到存储单元来传递信号或故障信号通过/失败检查的一个输出。
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公开(公告)号：KR1020030018270A
公开(公告)日：2003-03-06
申请号：KR1020010051888
申请日：2001-08-27
Applicant: 삼성전자주식회사
Inventor： 임봉순
IPC: H01L21/3065
Abstract: PURPOSE: A shadow ring for dry etch apparatus and a dry etch apparatus having the same are provided to prevent a covering error from an edge part of a wafer by restraining the movement of the shadow ring due to a physical shock. CONSTITUTION: A loading portion(102) having insertion holes(104a,104b) is formed at a lower end portion of an upper chamber(100). A shadow ring(300) is located at the loading portion(102) in order to prevent etching of an edge portion of a wafer(4). A plurality of fixing keys(302a,302b) are inserted and fixed into the insertion holes(104a,104b). The upper chamber(100) is used as an anode electrode. A lower chamber(200) is installed under the upper chamber(100). A cathode electrode(202) is formed in the inside of the lower chamber(200). An electrical spin chuck(204) is installed at an upper portion of the cathode electrode(202). The cathode electrode(202) is moved by a driving source. A gap between the wafer(4) and the shadow ring(300) is controlled by the movement of the cathode electrode(202). The shadow ring(300) has a through-hole(306), a shadow screen(304) and a projection(308).
Abstract translation: 目的：提供用于干蚀刻设备的阴影环和具有该阴影环的干蚀刻设备，以通过抑制由于物理冲击而引起的阴影环的移动来防止晶片边缘部分的覆盖误差。 构成：在上部室（100）的下端部形成有具有插入孔（104a，104b）的装载部（102）。 阴影环（300）位于加载部分（102）处，以防止蚀刻晶片（4）的边缘部分。 多个固定键（302a，302b）被插入并固定到插入孔（104a，104b）中。 上室（100）用作阳极电极。 下室（200）安装在上室（100）的下方。 阴极电极（202）形成在下室（200）的内部。 电旋转卡盘（204）安装在阴极电极（202）的上部。 阴极（202）由驱动源移动。 通过阴极电极（202）的移动来控制晶片（4）和阴影环（300）之间的间隙。 阴影环（300）具有通孔（306），阴影屏幕（304）和突起（308）。
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公开(公告)号：KR1020170128989A
公开(公告)日：2017-11-24
申请号：KR1020160059775
申请日：2016-05-16
Applicant: 삼성전자주식회사
IPC: H01L27/115 , G11C16/04 , G11C16/08
CPC classification number: G11C16/0466 , G11C5/025 , G11C16/0483 , G11C16/06 , G11C16/08 , G11C16/10 , G11C16/12 , G11C16/24 , G11C16/26 , G11C16/30 , G11C16/349 , H01L23/528 , H01L27/11565 , H01L27/11568 , H01L27/1157 , H01L27/11573 , H01L27/11575 , H01L27/11582
Abstract: 메모리장치는메모리셀 어레이아래에로우디코더, 페이지버퍼및 주변회로가배치되는수직적구조를가질수 있다. 본개시의예시적실시예에따라, 로우디코더및 페이지버퍼는비대칭적으로배치될수 있고, 주변회로는로우디코더및 페이지버퍼가배치되지아니한영역에배치될수 있다. 본개시의예시적실시예에따라, 플레인들의경계를중심으로로우디코더및 페이지버퍼가대칭적으로배치될수 있고, 주변회로는플레인들의경계중 일부를포함하는영역에배치될수 있다.
Abstract translation: 存储器件可以具有垂直结构，其中在存储器单元阵列下方布置有erro解码器，页面缓冲器和外围电路。 根据本公开的示例性实施例，行解码器和页面缓冲器可以被不对称地布置，并且外围电路可以被布置在没有布置行解码器和页面缓冲器的区域中。 根据本公开的示例性实施例，行解码器和页缓冲器可关于平面的边界对称地布置，并且外围电路可布置在包括平面的边界的一部分的区域中。
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公开(公告)号：KR1020170124019A
公开(公告)日：2017-11-09
申请号：KR1020160053533
申请日：2016-04-29
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L23/00 , H01L21/768
CPC classification number: H01L27/11573 , H01L27/0266 , H01L27/11565 , H01L27/1157 , H01L27/11575 , H01L27/11582
Abstract: 비휘발성메모리장치가개시된다. 본개시의실시예에따른비휘발성메모리장치는, 기판, 상기기판상에수직한방향으로적층되는복수의게이트도전층들및 상기복수의게이트도전층들을관통하는복수의채널홀들을포함하고, 상기기판상부에형성되는메모리셀 어레이, 상기메모리셀 어레이의적어도일부의상부에위치하고상기메모리장치를외부장치와전기적으로연결하는복수의본딩패드, 및상기기판과상기메모리셀 어레이사이에배치되며, 상기복수의본딩패드들중 적어도하나와전기적으로연결된패드회로를포함한다.
Abstract translation: 公开了一种非易失性存储器件。 根据本公开的实施例的非易失性存储器件包括：基板，包括通过多个所述栅极导电层与所述多个所述栅极导电层的以垂直于堆叠在所述基板，所述基板上的一个方向上的多个信道的孔 位于存储器单元阵列的至少一部分之上并且将存储器器件电连接到外部器件的多个接合焊盘以及设置在衬底和存储器单元阵列之间的多个接合焊盘， 以及电连接到半导体器件的至少一个键合焊盘的焊盘电路。
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公开(公告)号：KR1020160015506A
公开(公告)日：2016-02-15
申请号：KR1020140097534
申请日：2014-07-30
Applicant: 삼성전자주식회사
CPC classification number: G11C16/08 , G11C8/08 , G11C16/0483 , G11C16/10 , G11C16/28 , G11C16/3459
Abstract: 본발명의불휘발성메모리장치는메모리셀 어레이, 어드레스디코더, 입출력회로, 전압발생회로, 및제어로직을포함한다. 메모리셀 어레이는복수의스트링들을갖는복수의메모리블록들을포함한다. 어드레스디코더는선택된메모리블록의워드라인들의임피던스정보를측정한다. 전압발생회로는워드라인들에인가되는워드라인전압들을발생한다. 워드라인전압들중 적어도하나는옵셋전압과타켓전압을포함한다. 제어로직은측정된워드라인들의임피던스정보를근거로옵셋전압의레벨및 옵셋시간을조절한다.
Abstract translation: 根据本发明，非易失性存储器件包括存储单元阵列，地址解码器，输入/输出电路，电压产生电路和控制逻辑。 存储单元阵列包括具有多个串的多个存储块。 地址解码器测量所选存储块的字线的阻抗信息。 电压产生电路产生要施加到字线的字线电压。 字线电压中的至少一个包括偏移电压和目标电压。 控制逻辑基于所测量的字线的阻抗信息来调整偏移电压和偏移时间的电平。
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Patent Agency Ranking
公开(公告)号：KR100874914B1
公开(公告)日：2008-12-19
申请号：KR1020060133079
申请日：2006-12-22
Applicant: 삼성전자주식회사
CPC classification number: G11C16/10 , G11C16/3454 , G11C2216/14
Abstract: Provided are a non-volatile memory device in which time required for programming may be saved, and a method of driving the same. The non-volatile memory device may include a memory cell array with a plurality of memory cells; an input/output buffer having a storage unit that stores data and indicator bits representing information regarding the data; a data scanning unit that receives the stored data from the input/output buffer in units of scanning, and that scans the received data, the received data being selectively programmed in the memory cells according to a result of scanning the data; and/or a control logic unit that controls the data stored in the input/output buffer in units of scanning to be selectively supplied to the data scanning unit based on the states of the indicator bits.
Abstract translation: 提供了一种可以节省编程所需时间的非易失性存储器件及其驱动方法。 非易失性存储器件可以包括具有多个存储单元的存储单元阵列; 输入/输出缓冲器，具有存储数据的存储单元和表示关于数据的信息的指示符位; 数据扫描单元，其以扫描为单位从输入/输出缓冲器接收所存储的数据，并且扫描所接收的数据，所接收的数据根据扫描数据的结果被选择性地编程在存储器单元中; 和/或控制逻辑单元，其基于指示位的状态将以扫描为单位存储在输入/输出缓冲器中的数据选择性地提供给数据扫描单元。
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公开(公告)号：KR1020010035948A
公开(公告)日：2001-05-07
申请号：KR1019990042753
申请日：1999-10-05
Applicant: 삼성전자주식회사
Inventor： 임봉순
IPC: H01L21/02
Abstract: PURPOSE: A multi-chamber system with an alignment chamber is provided to maintain the airtightness of the load-lock chamber though the alignment chamber is separated from a multi-chamber system. CONSTITUTION: A multi-chamber system with an alignment chamber comprises the following structure. A buffer chamber(21) having doors for maintaining the airtightness of a load-lock chamber(11) is installed between an alignment chamber(13) and the load-lock chamber(11) when the alignment chamber(13) is separated from the load-lock chamber(11). The doors of the buffer chamber(21) are connected with a controller in order to be connected with a door of a slit valve of the alignment chamber(13) by a signal. The buffer chamber(21) has doors formed toward the alignment chamber(13) and the load-lock chamber(11).
Abstract translation: 目的：提供具有对准室的多室系统，以通过对准室与多室系统分离来保持负载锁定室的气密性。 构成：具有对准室的多室系统包括以下结构。 当对准室（13）与对准室（13）分离时，具有用于保持装载锁定室（11）的气密性的门的缓冲室（21）安装在对准室（13）和装载锁定室 加载锁定室（11）。 缓冲室（21）的门与控制器连接，以通过信号与对准室（13）的狭缝阀的门连接。 缓冲室（21）具有朝向对准室（13）和装载锁定室（11）形成的门。
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公开(公告)号：KR1020010029083A
公开(公告)日：2001-04-06
申请号：KR1019990041707
申请日：1999-09-29
Applicant: 삼성전자주식회사
Inventor： 임봉순
IPC: H01L21/00
Abstract: PURPOSE: A switching system of a slit valve is provided to make a door plate precisely operate by an operation of a well-balanced connection part when an actuator operates, and to perform a sealing through a sealing material by making the door plate reach a chamber wall. CONSTITUTION: Actuators(11) is installed on both sides of a switching system of a slit valve. Both ends of a cylinder(25) are connected to the actuator to reciprocate by the operation of the actuator. Connection parts(23) are connected and fixed to the cylinder. A door plate(22) is connected to the cylinder through the connection parts. The connection parts are symmetrically installed in a plurality of locations.
Abstract translation: 目的：提供一种狭缝阀的切换系统，以便在致动器操作时通过平衡良好的连接部件的操作来精确地操作门板，并且通过使门板到达腔室来进行密封 壁。 构成：致动器（11）安装在狭缝阀开关系统的两侧。 气缸（25）的两端连接到致动器，以通过致动器的操作往复运动。 连接部件（23）连接并固定到气缸。 门板（22）通过连接部分连接到气缸。 连接部件对称地安装在多个位置。
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公开(公告)号：KR1020170085779A
公开(公告)日：2017-07-25
申请号：KR1020160005330
申请日：2016-01-15
Applicant: 삼성전자주식회사
CPC classification number: G06F11/076 , G06F11/0727 , G06F11/0787 , G11C11/5628 , G11C11/5635 , G11C11/5642 , G11C16/3459
Abstract: 비휘발성메모리장치및 비휘발성메모리장치의동작방법이개시된다. 본개시의실시예에따른복수의페이지버퍼가매트릭스형태로배열된페이지버퍼어레이를포함하는비휘발성메모리장치의동작방법은, 상기페이지버퍼어레이의복수의컬럼들중 일부컬럼들을선택하는단계; 및상기선택된컬럼들에포함된페이지버퍼들에저장된페일비트를카운팅하는단계를포함할수 있다.
Abstract translation: 公开了一种操作非易失性存储器件和非易失性存储器件的方法。 操作非易失性存储装置，其中在根据本公开内容的实施例的多个页缓冲器包括布置成矩阵形式，包括以下步骤的页缓冲器阵列的方法，包括：选择某些所述多个阵列，页缓冲器中的列的列的; 并计算所选列中包含的页面缓冲区中存储的失败位。
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公开(公告)号：KR1020130125614A
公开(公告)日：2013-11-19
申请号：KR1020120049271
申请日：2012-05-09
Applicant: 삼성전자주식회사
Abstract: Disclosed are a memory device and a power management method thereof. The memory device according to an embodiment of the present invention includes a plurality of memory dies. The power management method according to the present invention controls the memory dies not to simultaneously perform a plurality of preset high power consumption operations in the random number of dies within the memory dies and comprises a first operation step of a first memory die to perform a first operation among the high power consumption operations and a second operation entry standby step of a second memory die using the voltage of a selected word line which corresponds to a page to perform a second operation among the high power consumption operations as a reference voltage. [Reference numerals] (S120) First memory die among a plurality of memory dies performs a first operation among a plurality of high power consumption operations;(S140) Second memory die among the memory dies waits for entering a second operation with the voltage of a selected word line corresponding to a page intending to perform a second operation among the high power consumption operations as a reference voltage
Abstract translation: 公开了一种存储器件及其电源管理方法。 根据本发明的实施例的存储器件包括多个存储器管芯。 根据本发明的电源管理方法控制存储器管芯不同时在存储管芯内的随机数目的模具中执行多个预设的高功耗操作，并且包括第一存储器管芯的第一操作步骤，以执行第一 在大功率消耗操作之间的操作和第二存储器管芯的第二操作进入待机步骤，使用对应于页面的所选择的字线的电压来执行高功耗操作中的第二操作作为参考电压。 （参考标号）（S120）多个存储模具中的第一存储器管芯在多个高功耗操作之间执行第一操作;（S140）存储器模具中的第二存储器管芯等待进入第二操作， 对应于要在高功率消耗操作中执行第二操作的页面的对应字线作为参考电压
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