公开(公告)号：KR1020090124330A

公开(公告)日：2009-12-03

申请号：KR1020080050467

申请日：2008-05-29

Applicant: 삼성전자주식회사

Inventor： 우윤성 ,  서순애 ,  김동철 ,  정현종 ,  전대영

IPC: H01L21/20 ,  H01L21/336 ,  H01L29/78

CPC classification number: H01L21/02491 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02516 ,  H01L21/02527 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/7781 ,  H01L29/78684 ,  Y10T428/12674

Abstract: PURPOSE: A stack structure comprising epitaxial graphene, method of forming the stack structure and electronic device comprising the stack structure are provided to obtain the dual gate structure having the top gate and bottom gate. CONSTITUTION: The underlying layer is formed on the Si substrate(SUB1). At least one epitaxial graphene(GP1) is included on the underlying layer. The underlying layer is an h- BN(hexagonal boron nitride)(0001) layer. The Ni(111) layer is formed between the Si substrate and underlying layer. The Cu(111) layer is formed between the Si substrate and Ni(111) layer. The Si substrate is the Si(111) substrate or the Si(110) substrate.

Abstract translation: 目的：提供包括外延石墨烯的堆叠结构，形成堆叠结构的方法和包括堆叠结构的电子器件，以获得具有顶部栅极和底部栅极的双栅极结构。 构成：底层形成在Si衬底（SUB1）上。 至少一个外延石墨烯（GP1）包含在下层。 底层是h-BN（六方氮化硼）（0001）层。 Ni（111）层形成在Si衬底和下层之间。 在Si衬底和Ni（111）层之间形成Cu（111）层。 Si衬底是Si（111）衬底或Si（110）衬底。

公开(公告)号：KR1020080101280A

公开(公告)日：2008-11-21

申请号：KR1020070047833

申请日：2007-05-16

Applicant: 삼성전자주식회사

Inventor： 정현종 ,  서순애 ,  이장원 ,  전대영 ,  정란주 ,  김동철 ,  배지영

IPC: G11C11/00

CPC classification number: H03K3/40 ,  G11C13/00 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/77 ,  G11C13/0002 ,  G11C5/02 ,  G11C2213/31

Abstract: A cross-point latch and method of operating the same is provided to shorten latch time and be manufacture easily while having excellent reliability of the latch. A cross-point latch includes a signal line(1), a control line(2, 3) crossing the signal line and unipolar switch(4, 5) at the crossing of the signal line and the control line. A bipolar unipolar switch comprises the resistance changing material. The resistance changing material is one of the niO, feO, coO, nbO2, zrO2, hfO2, znO, tbO, YO and WO3. The bipolar unipolar switch is at the crossing of the first and the second control line. Different voltages are supplied to the first and the second control line with supplying the input voltage to the signal line. One of the unipolar switches is closed and the other is opened.

Abstract translation: 提供了一种交叉点闩锁及其操作方法，以缩短闩锁时间并且容易地制造，同时具有优异的闩锁可靠性。 交叉点锁存器包括信号线（1），在信号线和控制线交叉处与信号线和单极开关（4,5）相交的控制线（2,3）。 双极单极开关包括电阻变化材料。 电阻变化材料是niO，feO，coO，nbO2，zrO2，hfO2，znO，tbO，YO和WO3之一。 双极单极开关处于第一和第二控制线的交叉处。 通过向信号线提供输入电压，向第一和第二控制线提供不同的电压。 单极开关之一是闭合的，另一个是打开的。