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    그래핀을 이용한 광 변조기
    5.
    发明公开
    그래핀을 이용한 광 변조기 审中-实审
    使用石墨的光学调制器

    公开(公告)号：KR1020130042906A

    公开(公告)日：2013-04-29

    申请号：KR1020110107056

    申请日：2011-10-19

    Applicant: 삼성전자주식회사

    Inventor： 조성호 ,  정현종

    IPC: G02B6/12 ,  G02B6/293 ,  G02B26/06

    CPC classification number: G02F1/025 ,  G02F2001/0156 ,  G02F2202/02

    Abstract: PURPOSE: An optical modulator using graphene is provided to increase a modulation depth and reduce the size of the optical modulator by increasing the optical absorption of the graphene through arranging the two graphene connected to an electrode at the center of an optical wave guide. CONSTITUTION: An optical modulator(100) using graphene comprises first and second graphene(141,142) positioned on the upper side of a semiconductor layer(120), a first electrode(161) positioned on the first graphene, and a second electrode(162) positioned on the second graphene. One side of the first graphene and one side of the second graphene are separately positioned. A first ridge part(124) on the semiconductor layer and a second ridge part(150) on the second graphene form an optical wave guide. The first and second graphene are formed at the center of the vertical surface of the optical wave guide.

    Abstract translation: 目的：提供一种使用石墨烯的光调制器，以通过将连接到光波导中心的电极的两个石墨烯布​​置在一起来增加石墨烯的光吸收，从而增加调制深度并减小光调制器的尺寸。 构成：使用石墨烯的光学调制器（100）包括位于半导体层（120）的上侧的第一和第二石墨烯（141,142），位于第一石墨烯上的第一电极（161）和第二电极（162） 位于第二石墨烯上。 第一石墨烯的一侧和第二石墨烯的一侧分开定位。 半导体层上的第一脊部（124）和第二石墨烯上的第二脊部（150）形成光波导。 第一和第二石墨烯形成在光波导的垂直表面的中心。

    그래핀을 포함하는 전극 구조체 및 전계효과 트랜지스터
    6.
    发明公开
    그래핀을 포함하는 전극 구조체 및 전계효과 트랜지스터 审中-实审
    包含石墨和电极效应晶体管的电极结构

    公开(公告)号：KR1020130032105A

    公开(公告)日：2013-04-01

    申请号：KR1020110095813

    申请日：2011-09-22

    Applicant: 삼성전자주식회사

    Inventor： 양희준 ,  박성준 ,  정현종 ,  허진성

    IPC: H01L29/78 ,  H01L21/336

    CPC classification number: H01L29/456 ,  H01L29/1606 ,  H01L29/41725 ,  H01L29/45 ,  H01L29/452 ,  H01L29/78 ,  H01L29/66712

    Abstract: PURPOSE: An electrode structure including graphene and a field effect transistor are provided to reduce the energy barrier by putting graphene between a semiconductor layer and metal. CONSTITUTION: Graphene(120) is formed on a semiconductor layer(110). A graphene layer includes an electrode metal(130). The graphene has a single layer or a double layer. The electrode metal has a size of 30nm or less. The graphene is in direct contact with the semiconductor layer.

    Abstract translation: 目的：提供包括石墨烯和场效应晶体管的电极结构，以通过将石墨烯放在半导体层和金属之间来减少能量势垒。 构成：在半导体层（110）上形成石墨烯（120）。 石墨烯层包括电极金属（130）。 石墨烯具有单层或双层。 电极金属的尺寸为30nm以下。 石墨烯与半导体层直接接触。

    그래핀 전자 소자 및 제조방법
    7.
    发明公开
    그래핀 전자 소자 및 제조방법 有权
    石墨电子器件及其制造方法

    公开(公告)号：KR1020120034419A

    公开(公告)日：2012-04-12

    申请号：KR1020100095971

    申请日：2010-10-01

    Applicant: 삼성전자주식회사

    Inventor： 양희준 ,  서순애 ,  이성훈 ,  정현종 ,  허진성

    IPC: H01L29/78 ,  H01L21/336

    CPC classification number: H01L29/66477 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/1079 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/78 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78684 ,  Y10S977/734 ,  Y10S977/838 ,  Y10S977/842 ,  H01L21/324

    Abstract: PURPOSE: A graphene electronic device and a fabricating method thereof are provided to prevent the inherent characteristic of a graphene channel layer from being damaged by forming a passivation layer or a gate oxide on the graphene channel layer after a thermal process. CONSTITUTION: A gate oxide(112) is formed on a silicon substrate(110). A hydrophobic polymer layer(120) is formed on the gate oxide. A graphene channel layer(130) is formed on the hydrophobic polymer layer. A source electrode(142) and a drain electrode(144) are respectively formed on both ends of the graphene channel layer. A passivation layer(150) covering the graphene channel layer is formed between the source electrode and the drain electrode.

    Abstract translation: 目的：提供石墨烯电子器件及其制造方法，以防止在热处理之后在石墨烯通道层上形成钝化层或栅极氧化物来损害石墨烯通道层的固有特性。 构成：在硅衬底（110）上形成栅氧化层（112）。 在栅极氧化物上形成疏水性聚合物层（120）。 在疏水聚合物层上形成石墨烯通道层（130）。 源极电极（142）和漏电极（144）分别形成在石墨烯通道层的两端。 在源电极和漏电极之间形成覆盖石墨烯沟道层的钝化层（150）。

    촉매합금을 이용한 그라핀의 제조방법
    8.
    发明公开
    촉매합금을 이용한 그라핀의 제조방법 有权
    使用合金催化剂制备石墨的方法

    公开(公告)号：KR1020110051584A

    公开(公告)日：2011-05-18

    申请号：KR1020090108231

    申请日：2009-11-10

    Applicant: 삼성전자주식회사

    Inventor： 우윤성 ,  서형석 ,  서순애 ,  정현종 ,  강새라 ,  허진성

    IPC: C01B31/02 ,  C23C14/16 ,  C22C19/00 ,  C23C14/34

    CPC classification number: C01B31/0453 ,  B01J23/755 ,  B01J37/347 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C01B2204/04 ,  C23C16/0281 ,  C23C16/26

    Abstract: PURPOSE: A method for manufacturing graphene using catalytic alloy is provided to control the amount of carbon dissolved in a catalytic alloy layer using catalytic metal reducing the dissolving property of nickel with respect to the carbon as a catalytic layer. CONSTITUTION: A method for manufacturing grapheme using catalytic alloy includes the following: An alloy catalytic layer is formed on a substrate(100). A graphene layer(120) is formed on the alloy catalytic layer by supplying hydrocarbon gas. The alloy catalytic layer is composed of at least two metal selected from transition metal or selected from a group including nickel, copper, platinum, iron, and gold.

    Abstract translation: 目的：提供使用催化合金制造石墨烯的方法，以使用催化金属来控制溶解在催化合金层中的碳的量，从而降低镍相对于作为催化剂层的碳的溶解性。 构成：使用催化合金制造字形的方法包括以下：在基板（100）上形成合金催化层。 通过供给碳氢化合物气体，在合金催化剂层上形成石墨烯层（120）。 合金催化剂层由选自过渡金属中的至少两种金属或选自镍，铜，铂，铁和金的组成。

    레이저 광을 이용한 그라핀의 힐링방법 및 전자소자 제조방법
    9.
    发明公开
    레이저 광을 이용한 그라핀의 힐링방법 및 전자소자 제조방법 无效
    使用激光束治疗石墨的缺陷的方法和使用其制造电子器件

    公开(公告)号：KR1020110042952A

    公开(公告)日：2011-04-27

    申请号：KR1020090099833

    申请日：2009-10-20

    Applicant: 삼성전자주식회사

    Inventor： 서순애 ,  김동철 ,  우윤성 ,  정현종 ,  허진성

    IPC: H01L29/786 ,  H01L21/268

    CPC classification number: H01L29/1606 ,  H01L21/268 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/78684 ,  H01L29/7781 ,  H01L29/78696

    Abstract: PURPOSE: A graphene healing method using the laser beam and an electronic device manufacturing method thereof are provided to detect the defect of the graphene nano ribbon with the in-situ from the Raman spectroscope and remove the defect using the laser. CONSTITUTION: Whether the graphene nano ribbon is defective or not is determined(501). The laser light is irradiated on the graphene nano ribbon to heal the defect of the graphene nano ribbon(502). A laser light having the wavelength of 514 nm is used during the healing stage. A laser light having the power of 2 mW to 10 mW is used during the healing stage. A laser light is irradiated for 10 to 15 minutes during the healing stage.

    Abstract translation: 目的：提供使用激光束的石墨烯愈合方法及其电子器件制造方法，以从拉曼光谱仪原位检测石墨烯纳米带的缺陷，并使用激光去除缺陷。 规定：是否确定石墨烯纳米带是否有缺陷（501）。 激光照射在石墨烯纳米带上以愈合石墨烯纳米带的缺陷（502）。 在愈合阶段使用波长为514nm的激光。 在愈合阶段使用功率为2mW至10mW的激光。 激光在愈合阶段照射10〜15分钟。

    그라핀 소자 및 그 제조 방법
    10.
    发明公开
    그라핀 소자 및 그 제조 방법 有权
    石墨装置及其制造方法

    公开(公告)号：KR1020110041791A

    公开(公告)日：2011-04-22

    申请号：KR1020090098778

    申请日：2009-10-16

    Applicant: 삼성전자주식회사

    Inventor： 허진성 ,  서순애 ,  김동철 ,  우윤성 ,  정현종

    IPC: H01L21/336 ,  H01L29/78 ,  B82B3/00

    CPC classification number: H01L29/1606 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/7781 ,  H01L29/78645 ,  H01L29/78684 ,  H01L21/2255

    Abstract: PURPOSE: A graphene device and a manufacturing method thereof are provided to simplify the process by firstly forming a gate electrode in embedded shape before forming the graphene. CONSTITUTION: An embedded gate is formed in the top of the substrate. The top oxide-nitride-oxide(28) is formed on the embedded gate. The graphene channel(30) and electrodes are included on the top oxide-nitride-oxide. A plurality of embedded gates is included in the top of the substrate with the interval. It is successively laminated or the graphene channel and electrodes are on the contrary laminated. The insulating layer is included on the graphene channel between electrode.

    Abstract translation: 目的：提供石墨烯器件及其制造方法，以在形成石墨烯之前首先形成嵌入形状的栅电极来简化工艺。 构成：在基板的顶部形成嵌入式栅极。 顶部氧化物 - 氮化物（28）形成在嵌入式栅极上。 石墨烯通道（30）和电极包括在顶部氧化物 - 氮化物氧化物上。 多个嵌入式门以间隔包含在衬底的顶部。 相继层压或石墨烯通道和电极相反层压。 绝缘层包含在电极之间的石墨烯通道上。

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