公开(公告)号：KR1020200090684A

公开(公告)日：2020-07-29

申请号：KR1020200089467

申请日：2020-07-20

Applicant: 삼성전자주식회사

Inventor： 김동철 ,  박경완 ,  박진형

IPC: G06F3/048 ,  G09F9/30 ,  H04M1/725 ,  H04M1/02

公开(公告)号：KR1020160030832A

公开(公告)日：2016-03-21

申请号：KR1020150068284

申请日：2015-05-15

Applicant: 삼성전자주식회사

Inventor： 김명식 ,  임종훈 ,  김창용 ,  이준희 ,  김동철 ,  서호성 ,  김양욱 ,  박재현

IPC: G06F3/0488 ,  G04G21/08 ,  G04B19/04 ,  G04G9/00

CPC classification number: G04G21/08 ,  G04C17/0091 ,  G04G5/00 ,  G04G9/00 ,  G04G9/02 ,  G04G17/04 ,  G04G21/025 ,  G04G21/04 ,  G06F1/163

Abstract: 다양한실시예에따르면, 웨어러블장치는, 시각을지시하는시각지시부와, 상기시각지시부를구동하는구동부를포함하는아날로그시계부; 상기구동부를조절하기위한입력을감지하는터치스크린; 및상기감지된입력에대응하여상기구동부를제어하는제어부를포함할수 있다.

Abstract translation: 本发明提供一种能够满足喜欢模拟手表的用户的请求的电子装置，例如为戴上模拟手表的用户提供的熟悉度，或者对其品牌的偏好，并且当用户佩戴时提供方便 一个智能手表在同一时间。 根据本发明的实施例，一种可佩戴装置包括：模拟监视单元，包括指示时间的时间指示单元和驱动时间指示单元的驱动单元; 触摸屏，其检测用于调节驱动单元的输入; 以及控制单元，其响应于所检测的输入来控制所述驱动单元。

公开(公告)号：KR1020110043267A

公开(公告)日：2011-04-27

申请号：KR1020090100307

申请日：2009-10-21

Applicant: 삼성전자주식회사

Inventor： 우윤성 ,  서순애 ,  김동철 ,  정현종

IPC: C01B31/00 ,  C01B31/04 ,  C30B29/36

CPC classification number: H01L29/1606 ,  B82Y10/00 ,  H01L27/1266 ,  H01L29/0665 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/7781 ,  H01L29/78603 ,  H01L29/78684

Abstract: PURPOSE: An electric device using a two-dimensional sheet material, and a manufacturing method thereof are provided to produce a gate electrode, an insulation layer, and an active channel with the two-dimensional sheet material. CONSTITUTION: An electric device using a two-dimensional sheet material comprises successively laminated first, second, and third elements formed with the two-dimensional sheet material. The second element has the insulating property, and includes either a graphene oxide or a hexagonal boron nitride. The first and third elements include the metallic property and the semiconductor property, respectively.

Abstract translation: 目的：提供使用二维片状材料的电子装置及其制造方法，以制造具有二维片材的栅电极，绝缘层和有源沟道。 构成：使用二维片材的电子装置包括由二维片材形成的依次层叠的第一，第二和第三元件。 第二元素具有绝缘性，并且包括石墨烯氧化物或六方氮化硼。 第一和第三元素分别包括金属性质和半导体性质。

公开(公告)号：KR1020090124330A

公开(公告)日：2009-12-03

申请号：KR1020080050467

申请日：2008-05-29

Applicant: 삼성전자주식회사

Inventor： 우윤성 ,  서순애 ,  김동철 ,  정현종 ,  전대영

IPC: H01L21/20 ,  H01L21/336 ,  H01L29/78

CPC classification number: H01L21/02491 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02516 ,  H01L21/02527 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/7781 ,  H01L29/78684 ,  Y10T428/12674

Abstract: PURPOSE: A stack structure comprising epitaxial graphene, method of forming the stack structure and electronic device comprising the stack structure are provided to obtain the dual gate structure having the top gate and bottom gate. CONSTITUTION: The underlying layer is formed on the Si substrate(SUB1). At least one epitaxial graphene(GP1) is included on the underlying layer. The underlying layer is an h- BN(hexagonal boron nitride)(0001) layer. The Ni(111) layer is formed between the Si substrate and underlying layer. The Cu(111) layer is formed between the Si substrate and Ni(111) layer. The Si substrate is the Si(111) substrate or the Si(110) substrate.

Abstract translation: 目的：提供包括外延石墨烯的堆叠结构，形成堆叠结构的方法和包括堆叠结构的电子器件，以获得具有顶部栅极和底部栅极的双栅极结构。 构成：底层形成在Si衬底（SUB1）上。 至少一个外延石墨烯（GP1）包含在下层。 底层是h-BN（六方氮化硼）（0001）层。 Ni（111）层形成在Si衬底和下层之间。 在Si衬底和Ni（111）层之间形成Cu（111）层。 Si衬底是Si（111）衬底或Si（110）衬底。

公开(公告)号：KR1020090014007A

公开(公告)日：2009-02-06

申请号：KR1020070078209

申请日：2007-08-03

Applicant: 삼성전자주식회사

Inventor： 김동철 ,  정란주 ,  서순애 ,  박배호 ,  이장원 ,  정현종 ,  김진수

IPC: H01L29/872

CPC classification number: H01L29/872 ,  H01L27/10 ,  H01L27/1021 ,  H01L27/24 ,  H01L29/24 ,  H01L29/47

Abstract: A schottky diode and memory device comprising the same is provided to realize a schottky diode with a PN diode or MOSFET by using contact of Nb oxide layer and metal layer. A schottky diode includes a first metal layer(10) and a Nb oxide layer(20). A Nb oxide layer is formed on the first metal layer, and the second metal layer(30) is formed on the Nb oxide layer. A memory device comprises a storage node and the switching element connected to the storage node. The storage node includes a data storage layer which is composed of resistance change layer, phase change layer, ferroelectric layer or magnetic layer.

Abstract translation: 提供肖特基二极管和包含该肖特基二极管的存储器件以通过使用Nb氧化物层和金属层的接触来实现具有PN二极管或MOSFET的肖特基二极管。 肖特基二极管包括第一金属层（10）和Nb氧化物层（20）。 在第一金属层上形成Nb氧化物层，在Nb氧化物层上形成第二金属层（30）。 存储设备包括存储节点和连接到存储节点的交换元件。 存储节点包括由电阻变化层，相变层，铁电层或磁性层构成的数据存储层。

公开(公告)号：KR1020090003526A

公开(公告)日：2009-01-12

申请号：KR1020070058575

申请日：2007-06-14

Applicant: 삼성전자주식회사

Inventor： 정란주 ,  서순애 ,  김동철 ,  이장원 ,  정현종

IPC: H01L33/02

Abstract: The infrared emitting diode of the nano size using graphene of two-dimensional layer material are provided to improve the luminous efficiency by making same the transition speed of hole and electrons. The infrared emitting diode comprises the light-emitting layer, and the gate electrode and the isolation layer. The light-emitting layer(120) comprises the light emission region(123), the source region(121) and drain region(122). The gate electrode(114) is formed in the light emission region. The insulating layer(112) isolates the gate electrode from the light-emitting layer. The light-emitting layer is formed with at least one among the group consisting of the graphene, boron nitride, cadmiumtellurium, molybdenum disulfide, niobium die selenide into selected a one.

Abstract translation: 提供使用二维层材料的石墨烯的纳米尺寸的红外发射二极管，以通过使空穴和电子的转变速度相同来提高发光效率。 红外发射二极管包括发光层，以及栅电极和隔离层。 发光层（120）包括发光区域（123），源极区域（121）和漏极区域（122）。 栅电极（114）形成在发光区域中。 绝缘层（112）将栅电极与发光层隔离。 发光层由选自石墨烯，氮化硼，碲化镉，二硫化钼，铌硒化物组成的组中的至少一种形成。

公开(公告)号：KR1020080110169A

公开(公告)日：2008-12-18

申请号：KR1020070058576

申请日：2007-06-14

Applicant: 삼성전자주식회사

Inventor： 정란주 ,  서순애 ,  김동철 ,  이장원 ,  정현종

IPC: H01L27/14

CPC classification number: H01L27/14603 ,  H01L22/14 ,  H01L27/1461

Abstract: A charge detector using graphene is provided to operate in the room temperature by using material stabilized in the room temperature including grapheme. A charge detector(100) using graphene comprises a tip(122), and a charge detecting device(110). The tip detects electric charge. The charge detecting device is formed on the tip. The charge detecting device comprises barriers(112, 113), an area-source(114) and drain region(115). The barrier is formed in both side of the electric charge detection area. Area-source and drain region are formed in the side of the barrier. The charge detecting device is integrately formed.

Abstract translation: 提供使用石墨烯的电荷检测器，通过使用在室温下稳定的材料（包括图形）在室温下操作。 使用石墨烯的电荷检测器（100）包括尖端（122）和电荷检测装置（110）。 尖端检测电荷。 电荷检测装置形成在尖端上。 电荷检测装置包括屏障（112,113），区域 - 源极（114）和漏极区域（115）。 势垒形成在电荷检测区域的两侧。 区域 - 源极和漏极区域形成在屏障的侧面。 电荷检测装置整合形成。

公开(公告)号：KR1020080101280A

公开(公告)日：2008-11-21

申请号：KR1020070047833

申请日：2007-05-16

Applicant: 삼성전자주식회사

Inventor： 정현종 ,  서순애 ,  이장원 ,  전대영 ,  정란주 ,  김동철 ,  배지영

IPC: G11C11/00

CPC classification number: H03K3/40 ,  G11C13/00 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/77 ,  G11C13/0002 ,  G11C5/02 ,  G11C2213/31

Abstract: A cross-point latch and method of operating the same is provided to shorten latch time and be manufacture easily while having excellent reliability of the latch. A cross-point latch includes a signal line(1), a control line(2, 3) crossing the signal line and unipolar switch(4, 5) at the crossing of the signal line and the control line. A bipolar unipolar switch comprises the resistance changing material. The resistance changing material is one of the niO, feO, coO, nbO2, zrO2, hfO2, znO, tbO, YO and WO3. The bipolar unipolar switch is at the crossing of the first and the second control line. Different voltages are supplied to the first and the second control line with supplying the input voltage to the signal line. One of the unipolar switches is closed and the other is opened.

Abstract translation: 提供了一种交叉点闩锁及其操作方法，以缩短闩锁时间并且容易地制造，同时具有优异的闩锁可靠性。 交叉点锁存器包括信号线（1），在信号线和控制线交叉处与信号线和单极开关（4,5）相交的控制线（2,3）。 双极单极开关包括电阻变化材料。 电阻变化材料是niO，feO，coO，nbO2，zrO2，hfO2，znO，tbO，YO和WO3之一。 双极单极开关处于第一和第二控制线的交叉处。 通过向信号线提供输入电压，向第一和第二控制线提供不同的电压。 单极开关之一是闭合的，另一个是打开的。

公开(公告)号：KR100855002B1

公开(公告)日：2008-08-28

申请号：KR1020070050132

申请日：2007-05-23

Applicant: 삼성전자주식회사

Inventor： 이영동 ,  유리톨마체프 ,  블라디미르볼리네츠 ,  바실리파쉬코프스키 ,  안드레이우샤코프 ,  금경수 ,  한재현 ,  김동철 ,  조형철

IPC: H01L21/265

CPC classification number: H01J37/32449 ,  H01J37/32357 ,  H01J37/32412 ,  H01J37/3244 ,  H01J37/3255 ,  H01J37/32862 ,  H01L21/2236

Abstract: A system for implanting plasma ions is provided to generate only the ions and polymer radicals necessary for an ion implantation process and easily control implanted plasma ions by generating plasma having an characteristic advantageous for an ion implantation process as compared with an ICP(inductively coupled plasma) process. A process target(501) is positioned in a vacuum chamber(500) having a reaction space in which plasma is generated. A first gas supply apparatus supplies reaction gas to the vacuum chamber. A second gas supply apparatus supplies cleaning gas to the vacuum chamber. Upper and lower electrodes(502,553) are installed in the vacuum chamber, confronting each other. A conductive ring(551) is installed in the periphery of the process target. An RF supply apparatus supplies RF power to the upper electrode to generate plasma. A high voltage supply apparatus supplies a high voltage to the process target, the lower electrode and the conductive ring. The first and second gas supply apparatuses can be installed in the sidewall(504) of the vacuum chamber, confronting each other.

Abstract translation: 提供了用于植入等离子体离子的系统，以仅产生离子注入工艺所需的离子和聚合物自由基，并且通过产生具有有利于离子注入工艺的特性的等离子体容易地控制注入的等离子体离子，与ICP（电感耦合等离子体）相比， 处理。 处理目标（501）位于具有产生等离子体的反应空间的真空室（500）中。 第一气体供给装置向真空室供给反应气体。 第二气体供给装置向真空室供给清洁气体。 上下电极（502,553）安装在真空室中，彼此面对。 导电环（551）安装在处理靶的周围。 RF供给装置向上部电极提供RF功率以产生等离子体。 高压电源装置向工艺靶，下电极和导电环提供高电压。 第一和第二气体供给装置可以安装在真空室的侧壁（504）中，彼此面对。

公开(公告)号：KR100849349B1

公开(公告)日：2008-07-29

申请号：KR1020070008328

申请日：2007-01-26

Applicant: 삼성전자주식회사

Inventor： 한승우 ,  김홍권 ,  곽규섭 ,  박경완 ,  김동철

IPC: H01L23/12

CPC classification number: H01L25/0657 ,  H01L2224/48227 ,  H01L2924/15153 ,  H01L2924/15311 ,  H01L2924/3025 ,  H01L2924/00

Abstract: A semiconductor package is provided to minimize the degradation of reliability due to integrated circuits during forming a printed circuit board by integrating the integrated circuits in the state that the printed circuit board is manufactured. A groove is formed on an upper surface of a printed circuit board(110). The printed circuit board includes a dielectric(112) and a conductive pattern layer(111), which are stacked in turn. A first integrated circuit(120) is located in the groove. A first molding unit(122) is applied to cover the first integrated circuit. A second integrated circuit(130) is received on an upper portion of the printed circuit board. A second molding unit(132) is formed on the printed circuit board so that it covers the second integrated circuit to shield electromagnetic wave. A first line(121) connects the first integrated circuit to the conductive pattern layer. The second line(131) connects the second integrated circuit to the conductive pattern layer.

Abstract translation: 提供一种半导体封装件，以便在印刷电路板制造的状态下集成集成电路来最小化在形成印刷电路板期间由集成电路导致的可靠性的劣化。 凹槽形成在印刷电路板（110）的上表面上。 印刷电路板包括依次层叠的电介质（112）和导电图案层（111）。 第一集成电路（120）位于凹槽中。 第一模制单元（122）被施加以覆盖第一集成电路。 第二集成电路（130）被容纳在印刷电路板的上部。 第二成型单元（132）形成在印刷电路板上，以覆盖第二集成电路以屏蔽电磁波。 第一线（121）将第一集成电路连接到导电图案层。 第二线（131）将第二集成电路连接到导电图案层。