公开(公告)号：KR1019940000209B1

公开(公告)日：1994-01-12

申请号：KR1019910018888

申请日：1991-10-25

Applicant: 삼성전자주식회사

Inventor： 조인수 ,  박성원

IPC: F04B23/00

Abstract: A gas line pumping system of a dry etching process includes a vacuum generator having an inlet thereof connected onto a gas supply line connected between a gas bomb and an etch chamber for supplying gas used for etching, and an outlet thereof connected between a vacuum pump and a gas cleaning unit to form a tubed path by means of a pipe, so that, if the gas accumulates for a long time after completing the etching, the accumulated gas is exhausted to prevent corrosion or clogging phenomena within the line caused by liquefaction of the gas.

Abstract translation: 干式蚀刻工艺的气体管线泵送系统包括：真空发生器，其具有连接在气体供给管线和连接在用于蚀刻的气体的蚀刻室之间的气体供给管线上的入口，以及连接在真空泵和 气体净化单元，其通过管道形成管道，使得如果在完成蚀刻之后气体积聚了很长时间，则累积的气体被排出以防止由于液化所引起的管线内的腐蚀或堵塞现象 加油站。

公开(公告)号：KR1020020051165A

公开(公告)日：2002-06-28

申请号：KR1020000080714

申请日：2000-12-22

Applicant: 삼성전자주식회사

Inventor： 전병구 ,  조인수 ,  유준열

IPC: H01L21/28

Abstract: PURPOSE: A formation method of a contact hole is provided to form a contact hole connecting a gate electrode with a metal interconnection without stopping an etching by forming a nitride layer having different thickness according to positions. CONSTITUTION: A gate electrode made of a gate insulating layer(115), a polysilicon layer(125), and a tungsten silicide layer(135) as a metal silicide layer is formed on a semiconductor substrate(100). Then, a capping layer made of Si3N4 layer as a nitride(147) and an oxide(157) is formed with a concave shape on the gate electrode. Then, an interlayer dielectric(180) is formed on the entire surface of the resultant structure. After etching the interlayer dielectric(180) on the center of the capping layer, the center portion of the tungsten silicide layer(135) is similarly etched.

Abstract translation: 目的：提供接触孔的形成方法，以通过根据位置形成具有不同厚度的氮化物层来形成连接栅极与金属互连的接触孔而不停止蚀刻。 构成：在半导体衬底（100）上形成由栅极绝缘层（115），多晶硅层（125）和作为金属硅化物层的硅化钨层（135）制成的栅电极。 然后，在栅电极上形成具有凹形的由氮化物（147）和氧化物（157）形成的由Si 3 N 4层构成的覆盖层。 然后，在所得结构的整个表面上形成层间电介质（180）。 在对覆盖层的中心蚀刻层间电介质（180）之后，类似地蚀刻硅化钨层（135）的中心部分。

公开(公告)号：KR1020020037661A

公开(公告)日：2002-05-22

申请号：KR1020010000323

申请日：2001-01-04

Applicant: 삼성전자주식회사

Inventor： 이정우 ,  전병구 ,  조인수

IPC: H01L21/66

Abstract: PURPOSE: A system for fabricating a semiconductor device is provided to shorten an interval of time from a process to a measurement test by testing whether the process is normal in unloading a wafer from process equipment, and to reduce defects by previously stopping driving the process equipment. CONSTITUTION: A wafer transfer unit(36b) selectively loads or unloads the wafer between a cassette and a process chamber(32b). A measuring test apparatus(44b) tests whether a process is normally performed regarding the wafer during an unloading process. A control unit controls driving respective constitution elements through a measurement signal applied from the measuring test apparatus.

Abstract translation: 目的：提供一种用于制造半导体器件的系统，以通过测试从处理设备卸载晶片的过程是否正常以及通过先前停止驱动处理设备来减少缺陷来缩短从过程到测量测试的时间间隔 。 构成：晶片传送单元（36b）选择性地在盒和处理室（32b）之间加载或卸载晶片。 测量测试装置（44b）在卸载过程中测试关于晶片的处理是否正常进行。 控制单元通过从测量测试装置施加的测量信号控制驱动各个构成元件。

公开(公告)号：KR1020020036078A

公开(公告)日：2002-05-16

申请号：KR1020000066017

申请日：2000-11-08

Applicant: 삼성전자주식회사

Inventor： 안응용 ,  조인수

IPC: H01L21/24

Abstract: PURPOSE: A method for fabricating a semiconductor device is provided to skip an alloy process and to maintain a maximized state of the alloy process regardless of the number of interconnection layers, by using hydrogen or heavy hydrogen as source gas in the first annealing process out of two annealing processes performed in a salicide process. CONSTITUTION: A gate electrode is formed on a semiconductor substrate. An insulation spacer is formed on both sidewalls of the gate electrode. A source/drain is formed in the substrate at both edges of the spacer. A high melting metal layer is formed on the resultant structure. The first annealing process is performed to selectively form a silicide layer only on the gate electrode and the source/drain by using hydrogen or heavy hydrogen as source gas. The remaining high melting metal layer is eliminated. The second annealing process using nitrogen as source gas is performed for a stable phase shift of the silicide layer.

Abstract translation: 目的：提供一种制造半导体器件的方法，通过在第一退火工艺中使用氢或重氢作为源气体，跳过合金工艺并保持合金工艺的最大化状态，而不管互连层的数量如何。 在自杀剂过程中进行两个退火处理。 构成：在半导体衬底上形成栅电极。 在栅电极的两个侧壁上形成绝缘垫片。 在衬垫的两个边缘处形成源极/漏极。 在所得结构上形成高熔点金属层。 执行第一退火处理以通过使用氢或重氢作为源气体仅选择性地在栅电极和源极/漏极上形成硅化物层。 剩下的高熔点金属层被消除。 执行使用氮气作为源气体的第二退火工艺用于硅化物层的稳定相移。

公开(公告)号：KR1020010086520A

公开(公告)日：2001-09-13

申请号：KR1020000010445

申请日：2000-03-02

Applicant: 삼성전자주식회사

Inventor： 배진호 ,  조인수

IPC: H01L21/76

Abstract: PURPOSE: A method for forming an isolation region of a semiconductor device is provided to prevent the bird's beak and reduce the line width of a field region by forming a trench and a device separation film in forming a spacer. CONSTITUTION: A pad oxide film(102) and a silicon nitride film(104) are formed on a semiconductor substrate(100). By patterning the pad oxide film(102) and the silicon nitride film(104) in succession, isolation patterns having a predetermined pitch are formed. The width of the pitch is from 0.2 micrometer to 0.6 micrometer. A spacer membrane is formed on the whole semiconductor substrate(100) including the isolation patterns. A spacer is formed on both sidewalls of the isolation patterns by etching, and a trench is formed between the isolation patterns. An oxide film is grown to fill up the trench, so that an isolation region is formed.

Abstract translation: 目的：提供一种用于形成半导体器件的隔离区域的方法，用于通过在形成间隔物时形成沟槽和器件分离膜来防止鸟的喙并减小场区的线宽。 构成：在半导体衬底（100）上形成衬垫氧化膜（102）和氮化硅膜（104）。 通过依次构图衬垫氧化膜（102）和氮化硅膜（104），形成具有预定间距的隔离图案。 间距的宽度为0.2微米至0.6微米。 在包括隔离图案的整个半导体衬底（100）上形成间隔膜。 通过蚀刻在隔离图案的两个侧壁上形成间隔物，并且在隔离图案之间形成沟槽。 生长氧化膜以填充沟槽，从而形成隔离区。

公开(公告)号：KR1020010010125A

公开(公告)日：2001-02-05

申请号：KR1019990028840

申请日：1999-07-16

Applicant: 삼성전자주식회사

Inventor： 조인수 ,  구지언

IPC: B25J3/00

Abstract: PURPOSE: A working robot arm for semiconductor producing provides to prevent a wafer from temperature difference by a heater CONSTITUTION: A working robot arm for semiconductor producing consists of a rotating disk(13), an arm supporting shaft(14), an arm(15), a wafer stand(16), and a heater(19). A silicon rubber heater is usually used for the heat(19). The rotating disk(13) is fixed on the rotating shaft(12) and the wafer stand(16) is equipped on the end of the arm(15). The air suction hole(17) is made to hold a wafer at the center of the wafer stand(16). The heater(19) is installed on the bottom side of the arm(15) to increase a temperature of the arm(15) and the temperature of the wafer stand(16) becomes identical with the temperature of a wafer before the wafer is moved. Therefore, Stress transferring and a damage of the wafer from the temperature difference is prevented.

Abstract translation: 目的：用于半导体生产的工作机器人手臂用于防止晶片受加热器的温度差构成：用于半导体生产的工作机器人臂由旋转盘（13），臂支撑轴（14），臂（15） ），晶圆台（16）和加热器（19）。 通常使用硅橡胶加热器（19）。 旋转盘（13）固定在旋转轴（12）上，并且在臂（15）的端部上装有晶片架（16）。 使空气吸入孔17保持在晶片架（16）的中央处的晶片。 加热器（19）安装在臂（15）的底侧以增加臂（15）的温度，并且晶片架（16）的温度变得与晶片移动之前晶片的温度相同 。 因此，防止了晶片从温度差的应力转移和损坏。

公开(公告)号：KR1020000051510A

公开(公告)日：2000-08-16

申请号：KR1019990002008

申请日：1999-01-22

Applicant: 삼성전자주식회사

Inventor： 장호선 ,  박진호 ,  조인수

IPC: H01L21/306

Abstract: PURPOSE: A gas supply system for the equipment of fabricating semiconductor is provided by supplying a purge gas into a process chamber under the condition to maintain the temperature of the purge gas similar to inner temperature level of the process chamber, and as the result, the required time of a process stand-by in order to increase the inner temperature of the process chamber is minimized. CONSTITUTION: A gas supply system for the equipment of fabricating semiconductor consists of: the process gas supply lines to be connected to the process chamber; a purge gas supply line to be connected to the process chamber; a shield valve to be connected to the purge gas supply line; a heater to be connected to the purge gas supply line; and a control system to control the heater.

Abstract translation: 目的：通过在保持吹扫气体的温度与处理室的内部温度水平相似的条件下，向处理室中提供净化气体来提供用于制造半导体设备的气体供应系统，结果， 为了提高处理室的内部温度，处理待机的所需时间被最小化。 构成：用于制造半导体设备的气体供应系统包括：要连接到处理室的工艺气体供应管线; 要连接到处理室的净化气体供应管线; 屏蔽阀，其连接到吹扫气体供应管线; 与吹扫气体供给管线连接的加热器; 以及控制加热器的控制系统。

公开(公告)号：KR1019900010053A

公开(公告)日：1990-07-06

申请号：KR1019880017696

申请日：1988-12-28

Applicant: 삼성전자주식회사

Inventor： 조인수

IPC: C23F1/00

公开(公告)号：KR100689696B1

公开(公告)日：2007-03-08

申请号：KR1020010000323

申请日：2001-01-04

Applicant: 삼성전자주식회사

Inventor： 이정우 ,  전병구 ,  조인수

IPC: H01L21/66

Abstract: 본 발명은 반도체소자를 제조하는데 따른 제조 설비의 구성을 단순화시켜 설비 규모의 축소를 도모하고, 각 공정간의 진행 시간을 줄이도록 하며, 웨이퍼의 오염 가능성과 공정 불량률을 줄이도록 하여 수율 향상을 도모하고, 각종 에너지의 소요비용을 절감하도록 하는 반도체장치 제조시스템 및 그 운영방법에 관한 것으로서, 이를 구현하기 위한 반도체장치 제조시스템의 구성은, 소정 위치의 카세트와 공정챔버 사이로 웨이퍼를 선택적으로 로딩 또는 언로딩 위치시키기 위한 로봇을 포함한 웨이퍼 이송부에 언로딩 과정의 웨이퍼에 대응하여 상기 공정챔버의 공정의 정상 여부를 계측검사하는 계측검사장치가 설치됨을 특징으로 한다.
따라서, 본 발명에 의하면, 공정설비로부터 공정을 수행한 웨이퍼를 언로딩하는 과정에서 공정의 정상 여부를 계측검사하게 됨에 따라 공정 수행에서 계측검사까지의 시간 단축과 그 사이에서의 공정 불량에 의한 공정설비의 구동을 조기에 중지시키게 되어 제품 불량률이 감소되고, 그에 따른 반도체장치 제조 수율의 향상되는 효과가 있다.
반도체장치 제조설비, 로딩, 언로딩, 로드락 챔버, 계측장치

公开(公告)号：KR1020060022958A

公开(公告)日：2006-03-13

申请号：KR1020040071761

申请日：2004-09-08

Applicant: 삼성전자주식회사

Inventor： 오혁상 ,  정주혁 ,  박광면 ,  조인수 ,  김성일

IPC: H01L27/146 ,  H01L31/10

CPC classification number: H01L27/14625 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687

Abstract: 이미지 소자가 제공된다. 이미지 소자는, 수광 소자가 형성된 기판과, 기판상에 형성되며, 수광 소자 상부에서 캐버티를 갖는 층간 절연막 구조물과, 캐버티에 매립되어 형성되며, 층간 절연막 구조물 상부로부터 돌출된 부분은 렌즈 타입으로 형성된 투명 절연막과, 투명 절연막 상부에 형성된 컬러 필터를 포함하여 이루어진다. 여기서, 투명 절연막은 그 상부가 볼록 렌즈 타입으로 형성될 수 있다. 또한, 투명 절연막은 그 상부가 오목 렌즈 타입으로 형성될 수도 있다. 이미지 소자의 제조 방법 또한 제공된다.
포토 다이오드, 스핀온 절연막, 마이크로 렌즈