公开(公告)号：KR1020020085526A

公开(公告)日：2002-11-16

申请号：KR1020010025076

申请日：2001-05-09

Applicant: 삼성전자주식회사

Inventor： 최철환 ,  김용갑 ,  조찬형

IPC: H01L21/00

Abstract: PURPOSE: Semiconductor device manufacturing equipment is provided to install a plurality of semiconductor fabrication apparatuses within a limited area by reducing an occupied area of various fabrication apparatuses within a production line. CONSTITUTION: A plurality of chambers are formed with a plurality of process chambers(32a), a plurality of load lock chambers(34a), and a plurality of auxiliary chambers. A transfer chamber(30a) has a robot device(Ra) for transferring a wafer(W). The process chamber(32a), the load lock chamber(34a), and the auxiliary chamber are selectively connected with the transfer chamber(30a). The process chamber(32a), the load lock chamber(34a), and the auxiliary chamber are vertically arrayed on the basis of the transfer chamber(30a). Various units(38a) such as vacuum lines and gas supply lines connected with each chamber are arrayed to the vertical direction.

Abstract translation: 目的：提供半导体器件制造设备，通过减少生产线内的各种制造装置的占用面积，在有限的区域内安装多个半导体制造装置。 构成：多个室形成有多个处理室（32a），多个负载锁定室（34a）和多个辅助室。 传送室（30a）具有用于传送晶片（W）的机器人装置（Ra）。 处理室（32a），负载锁定室（34a）和辅助室选择性地与传送室（30a）连接。 处理室（32a），负载锁定室（34a）和辅助室在传送室（30a）的基础上垂直排列。 与各室连接的各种单元（38a）如真空管线和气体供应管线被排列成垂直方向。

公开(公告)号：KR1020020022863A

公开(公告)日：2002-03-28

申请号：KR1020000055394

申请日：2000-09-21

Applicant: 삼성전자주식회사

Inventor： 김형열 ,  조찬형 ,  최철환 ,  이민우 ,  장성환

IPC: H01L21/205

Abstract: PURPOSE: A shower head for fabricating a semiconductor is provided to decrease the number of particles dropped to a wafer, by performing an embossing process regarding the surface of a spraying plate for spraying metallic gas so that the surface area where the metallic gas is attached is increased. CONSTITUTION: A shower head body has a buffer space part to which process gas is induced. A spraying plate(23) sprays the process gas in the buffer space part, installed on the bottom surface of the shower head body. The surface of the spraying plate becomes rough to increase the surface area to which the metallic gas is attached. The surface of the spraying plate is embossed.

Abstract translation: 目的：提供一种用于制造半导体的喷头，通过对用于喷射金属气体的喷涂板的表面进行压花加工，使得附着有金属气体的表面积为 增加。 构成：淋浴头本体具有产生工艺气体的缓冲空间部分。 喷洒板（23）喷射缓冲空间部分中的处理气体，安装在淋浴头本体的底面上。 喷涂板的表面变得粗糙以增加金属气体附着的表面积。 喷涂板的表面被压花。

公开(公告)号：KR1020010105941A

公开(公告)日：2001-11-29

申请号：KR1020000027071

申请日：2000-05-19

Applicant: 삼성전자주식회사

Inventor： 조찬형 ,  최철환

IPC: H01L21/205

CPC classification number: Y02T10/40

Abstract: A diagnostic system (10) in an engine management system is provided for generating a diagnostic trouble code (DTC) to indicate the operational status of a component or a sub-system. The diagnostic system includes a diagnostic function module (DF Module) (20, 20', 20'') for each DTC or a group of related DTCs associated with a component or sub-system. The DF module includes means (22) for executing an evaluation routine to evaluate a component/sub- system to which the DTC of the specific DF module relates, and a dynamic scheduler (30) for determining which DF module may be allowed to execute an evaluation routine at a particular time. Each DF module (20, 20', 20'') includes means (22) for producing a ranking value dependent on the operating status of the component or sub-system being evaluated, a ranking value being generated each time an evaluation routine is performed; means (23) for processing and storing statistical results of the ranking values obtained over a number of evaluation routines; means (23) for evaluating the statistical results to produce evaluated data in the form of either an evaluated no-fault signal or an evaluated fault signal, and means (24) for establishing the priority of the associated evaluation routine, and means for transmitting the evaluated signals to the dynamic scheduler (30).

Abstract translation: 提供了一种用于产生用于指示组件或子系统的操作状态的诊断故障代码（DTC）的发动机管理系统中的诊断系统（10）。 诊断系统包括用于每个DTC的诊断功能模块（DF模块）（20,20'，20“）或与组件或子系统相关联的一组相关DTC。 DF模块包括用于执行评估例程以评估特定DF模块的DTC所关联的组件/子系统的装置（22）和用于确定哪个DF模块可以被执行的动态调度器（30） 特定时间的评估程序。 每个DF模块（20,20'，20“）包括用于产生取决于被评估的组件或子系统的操作状态的排序值的装置（22），每次执行评估程序时生成的排名值 ; 用于处理和存储通过多个评估例程获得的排序值的统计结果的装置（23）; 用于评估统计结果以以评估的无故障信号或评估的故障信号的形式产生评估数据的装置（23），以及用于建立相关联的评估程序的优先级的装置（24），以及用于发送 评估信号给动态调度器（30）。

公开(公告)号：KR1020010055783A

公开(公告)日：2001-07-04

申请号：KR1019990057093

申请日：1999-12-13

Applicant: 삼성전자주식회사

Inventor： 최철환 ,  조찬형 ,  전진호 ,  서태욱

IPC: H01L21/00

Abstract: PURPOSE: A color standardization method of a graphic user interface(GUI) for semiconductor fabrication facilities is provided to permit an immediate grasp of a process proceeding state in the facilities and thereby to allow an improvement in productivity. CONSTITUTION: In the color standardization method, colors displayed on the graphic user interface(GUI) are classified by the facilities, wafers, and causes of alarm. In classification of colors by the facilities, the color of a cassette depends on whether the cassette is in a load lock chamber or not, and the color of the load lock chamber depends on whether a process chamber can be used or not. The color of the load lock chamber further depends on whether a door thereof can be promptly opened or not. In classification of colors by the wafers, the color of the wafer depends on whether a deposition process has already been performed, is being performed, will be performed, or is stopped. In addition, the color of the wafer is classified by depending on caused of alarm, such as pressure, temperature, or mass flow controller.

Abstract translation: 目的：提供用于半导体制造设备的图形用户界面（GUI）的颜色标准化方法，以便立即掌握设施中的处理进行状态，从而允许提高生产率。 规定：在颜色标准化方法中，图形用户界面（GUI）上显示的颜色由设备，晶片和报警原因分类。 在设备对颜色进行分类时，盒子的颜色取决于盒子是否在装载锁定室中，并且装载锁定室的颜色取决于是否可以使用处理室。 负载锁定室的颜色还取决于其门是否可以及时地打开。 在通过晶片分类颜色时，晶片的颜色取决于是否已经执行了沉积处理，正在执行沉积处理，还是被执行，或者停止。 此外，晶片的颜色依赖于诸如压力，温度或质量流量控制器之类的报警引起的分类。

公开(公告)号：KR1020040077284A

公开(公告)日：2004-09-04

申请号：KR1020030012788

申请日：2003-02-28

Applicant: 삼성전자주식회사

Inventor： 조찬형 ,  박승규

IPC: H01L29/78

CPC classification number: H01L29/6656 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/28052 ,  H01L21/28114 ,  H01L29/42376 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

Abstract: PURPOSE: A gate having an expanded upper area and a method for fabricating a semiconductor device having the same are provided to increase an upper area of a gate electrode by forming a wing portion on a lateral portion of an upper part of a gate poly. CONSTITUTION: The first insulating layer(12) is formed on a semiconductor substrate(10). A gate pattern(14) is formed on the semiconductor substrate. The second insulating layer is formed on the gate pattern and the semiconductor substrate. An upper surface of the second insulating layer is formed under the upper surface of the gate pattern by removing the second insulating layer. A conductive layer is formed on the second insulating layer and the upper surface of the gate pattern. A spacer(19) is formed on a lateral portion of an upper part of the gate pattern. The second insulating layer is removed therefrom.

Abstract translation: 目的：提供具有扩大的上部区域的栅极和用于制造具有其的半导体器件的方法，以通过在栅极聚合物的上部的侧面部分上形成翼部来增加栅电极的上部区域。 构成：第一绝缘层（12）形成在半导体衬底（10）上。 在半导体衬底上形成栅极图案（14）。 第二绝缘层形成在栅极图案和半导体衬底上。 通过去除第二绝缘层，在栅极图案的上表面之下形成第二绝缘层的上表面。 在第二绝缘层和栅极图案的上表面上形成导电层。 间隔物（19）形成在栅极图案的上部的侧面部分上。 从其中去除第二绝缘层。

公开(公告)号：KR1020020061803A

公开(公告)日：2002-07-25

申请号：KR1020010002814

申请日：2001-01-18

Applicant: 삼성전자주식회사

Inventor： 최철환 ,  전진호 ,  김용갑 ,  이종승 ,  이민우 ,  김경태 ,  조찬형

IPC: H01L21/02

CPC classification number: C23C16/4408 ,  C23C16/42 ,  C23C16/45561 ,  F17D1/04

Abstract: PURPOSE: An apparatus for eliminating residual gas of a gas supplying apparatus is provided to prevent WF6 gas remaining in a gas line from being injected to the inside of a chamber together with carrier gas like argon, by supplying the WF6 gas to the chamber in a main deposition step and by eliminating the WF6 gas remaining in the gas line connected to a low stress valve. CONSTITUTION: The low stress valve(100) supplies or intercepts the gas supplied from a plurality of mass flow controllers(MFC's)(60) through the gas line(81). A WF6 gas eliminating unit eliminates the remaining WF6 gas in the gas line connected to a gas introducing line of the low stress valve.

Abstract translation: 目的：提供一种用于消除气体供应装置的残留气体的装置，用于防止气体管线中留下的WF6气体与诸如氩气的载气一起注入到室内，通过将WF 6气体以 主沉积步骤，并且通过消除残留在连接到低应力阀的气体管线中的WF6气体。 构成：低应力阀（100）通过气体管线（81）供给或截取从多个质量流量控制器（MFC）（60）供给的气体。 WF6气体消除单元消除了连接到低应力阀的气体导入管线的气体管线中的剩余WF6气体。

公开(公告)号：KR100267106B1

公开(公告)日：2000-10-02

申请号：KR1019980036319

申请日：1998-09-03

Applicant: 삼성전자주식회사

Inventor： 박주성 ,  조찬형

IPC: H01L21/768

CPC classification number: H01L23/5226 ,  H01L21/76802 ,  H01L21/76805 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: 공정 불량 발생을 억제하여 반도체 소자의 신뢰성 향상을 꾀할 수 있도록 한 반도체 소자의 다층 배선 형성방법이 개시된다. 제 1 층간 절연막이 구비된 반도체 기판 상에 제 1 도전성막과 제 2 도전성막을 순차적으로 형성하고, 콜리메이터가 구비된 스퍼터 장치를 이용하여 제 2 도전성막 상에 Ti/TiN 적층막 구조의 반사방지막을 형성한 다음, 제 1 층간 절연막의 표면이 소정 부분 노출되도록 반사방지막과 제 2 및 제 1 도전성막을 소정 부분 선택식각하여, 제 2 도전성막을 사이에 두고 그 상·하측부에 반사방지막과 제 1 도전성막이 놓여진 구조의 금속 배선을 형성한다. 상기 결과물 전면에 제 2 층간 절연막을 형성하고, 금속 배선의 표면이 소정 부분 노출되도록 제 2 층간 절연막과 반사방지막을 소정 부분 건식식각하여 비어 홀을 형성하되, 그 바텀면의 가장자리부를 따라서는 테이퍼진 형상의 반사방지막이 잔존되도록 한다. 폴리머 제거용 습식식각을 실시한 뒤, RF 스퍼터 식각을 실시하여 금속 배선의 표면 노출부에 형성된 자연 산화막과 반사방지막의 테이퍼진 부분을 제거한 다음, 비어 홀 내부에 도전성 플러그를 형성한다. 그 결과, 비어 홀 형성시 야기되는 공정 불량(예컨대, 비어 홀 하단의 반사방지막 안쪽으로 오목한 형상의 골이 형성되는 불량이나 비어 홀 내에 셔도우 포인트가 생성되는 불량)을 제거할 수 있게 되므로, 반도체 소자의 신뢰성을 향상시킬 수 있게 된다.