公开(公告)号：KR1020040037816A

公开(公告)日：2004-05-07

申请号：KR1020020066470

申请日：2002-10-30

Applicant: 삼성전자주식회사

Inventor： 조경환 ,  최우경

IPC: H01L21/22

Abstract: PURPOSE: A wafer transfer apparatus for semiconductor diffusion equipment is provided to load and unload a wafer to/from any slot of a predetermined portion of a boat using tweezers. CONSTITUTION: A wafer transfer apparatus(200) for semiconductor diffusion equipment is provided with a boat(220) having a plurality of slots(225) spaced apart from each other, and a wafer transfer part(240) installed at one side of the boat for carrying out a wafer loading and unloading process. At this time, the wafer transfer part includes a plurality of tweezers(245) corresponding to the slots. Preferably, the tweezers are capable of being simultaneously or individually operated. Preferably, five tweezers are installed at the wafer transfer part.

Abstract translation: 目的：提供一种用于半导体扩散设备的晶片传送装置，用于使用镊子将晶片装载到船的预定部分的任何槽的任何槽上。 构成：用于半导体扩散设备的晶片传送装置（200）设置有具有彼此间隔开的多个槽（225）的船（220）和安装在船的一侧的晶片传送部（240） 用于进行晶片装载和卸载过程。 此时，晶片传送部分包括对应于槽的多个镊子（245）。 优选地，镊子能够同时或单独操作。 优选地，五个镊子安装在晶片传送部件上。

公开(公告)号：KR1020020018823A

公开(公告)日：2002-03-09

申请号：KR1020000052110

申请日：2000-09-04

Applicant: 삼성전자주식회사

Inventor： 최우경 ,  안계홍

IPC: H01L21/205

Abstract: PURPOSE: A chemical vapor deposition apparatus used in a process for fabricating a semiconductor is provided to prevent temperature ununiformity of a process tube caused by a low-temperature cap flange, by preventing the temperature of the cap flange from being decreased by hot wire. CONSTITUTION: The process tube(110) is installed in a fixing flange(112). A plurality of wafers are loaded into a wafer boat(120). The wafer boat is placed on the cap flange(130) coupled to the fixing flange. A loading/unloading unit loads/unloads the cap flange into/from the process tube. A heating unit(114) maintains the temperature of the cap flange uniform.

Abstract translation: 目的：提供一种在半导体制造工艺中使用的化学气相沉积装置，通过防止帽法兰的温度由于热丝而降低，从而防止由低温帽法兰引起的加工管的温度不均匀。 构成：工艺管（110）安装在固定法兰（112）中。 多个晶片装载到晶片舟皿（120）中。 晶片舟放置在联接到固定凸缘的帽凸缘（130）上。 加载/卸载单元将帽法兰装载/卸载到加工管中。 加热单元（114）保持帽法兰的温度均匀。

公开(公告)号：KR1020060013878A

公开(公告)日：2006-02-14

申请号：KR1020040062489

申请日：2004-08-09

Applicant: 삼성전자주식회사

Inventor： 최우경

IPC: H01L21/02

CPC classification number: H01L21/67098 ,  H01L21/67201 ,  H01L21/67739 ,  H01L21/67772

Abstract: 반도체 소자 제조 장치가 제공된다. 반도체 소자 제조 장치는, 웨이퍼가 반입, 반출되도록 개구부가 형성된 공정 챔버와 개구부를 통하여 공정 챔버 내부의 열이 외부로 유출되는 것을 방지하는 셔터 및 셔터에 냉각 기체를 공급하는 냉각 기체 공급부로 이루어진다.
셔터, 냉각 기체, 공정 챔버

公开(公告)号：KR1020050045343A

公开(公告)日：2005-05-17

申请号：KR1020030079386

申请日：2003-11-11

Applicant: 삼성전자주식회사

Inventor： 최우경 ,  박찬식 ,  박종대 ,  안응용

IPC: H01L21/205

Abstract: 병렬로 연결된 히터 코일의 이상유무를 파악할 수 있는 본 발명에 의한 반도체 제조장치는 내부에 웨이퍼가 안착된 보트가 진입하도록 공간부를 가진 튜브와, 코일을 통하여 열을 발생시켜 웨이퍼를 가열하는 히터와, 튜브의 부위별 온도를 측정하는 다수의 써모커플을 포함한다. 여기서, 히터는 다수의 코일이 병렬로 연결된 병렬 히터구역을 포함하며, 병렬 히터구역은 적어도 2개 이상의 써모커플이 설치되어 온도를 측정한다.
본 발명에 따르면 각 코일마다 써모커플을 설치하여 코일마다 온도 변화를 측정하여 각 코일의 이상유무를 쉽게 파악할 수 있다.

公开(公告)号：KR1020020082048A

公开(公告)日：2002-10-30

申请号：KR1020010021806

申请日：2001-04-23

Applicant: 삼성전자주식회사

Inventor： 최우경

IPC: H01L21/00

Abstract: PURPOSE: An apparatus for preventing a gas accident in a semiconductor diffusion process is provided to prevent previously an accident generated from a diffusion process by detecting a lowering phenomenon of internal temperature of a reaction chamber and stopping a reaction gas supplied to the reaction chamber. CONSTITUTION: A process control portion(101) controls totally a diffusion process. A gas supply portion(200) is connected with a reaction chamber(300) by a gas line. The gas supply portion(200) is formed with a gas supply source(201), the first valve(202), the second valve(204), and a gas flow rate controller(203). The first and the second valves(202,204) and the gas flow rate controller(203) are controlled by a gas control portion(205). A thermal sensor portion(130) is installed in the inside of the reaction chamber(300). A heater portion(120) is installed at the outside of the reaction chamber(300). The gas control portion(205) and a thermal control portion(110) control the gas supply portion(200), the heater portion(120) and the thermal sensor portion(130). The thermal control portion(110) has an alarm signal generation module(111). An interlock setup module(102) of the process control portion(101) operates the corresponding gas valves(202,204) in order to stop an exhaust operation of gases which are not decomposed.

Abstract translation: 目的：提供一种用于防止半导体扩散处理中的气体事故的装置，以通过检测反应室的内部温度的降低现象并停止供应到反应室的反应气体，防止事先由扩散过程产生的事故。 构成：过程控制部分（101）完全控制扩散过程。 气体供给部（200）通过气体管线与反应室（300）连接。 气体供给部（200）形成有气体供给源（201），第一阀（202），第二阀（204）和气体流量控制器（203）。 第一和第二阀（202,204）和气体流量控制器（203）由气体控制部分（205）控制。 热传感器部分（130）安装在反应室（300）的内部。 加热器部分（120）安装在反应室（300）的外部。 气体控制部分（205）和热控制部分（110）控制气体供应部分（200），加热器部分（120）和热传感器部分（130）。 热控制部（110）具有报警信号生成模块（111）。 过程控制部分（101）的互锁设置模块（102）操作相应的气阀（202,204），以便停止不分解气体的排气操作。

公开(公告)号：KR1020020027974A

公开(公告)日：2002-04-15

申请号：KR1020000058812

申请日：2000-10-06

Applicant: 삼성전자주식회사

Inventor： 최우경

IPC: H01L21/205

Abstract: PURPOSE: A boat having a load plate of a chemical vapor deposition(CVD) apparatus is provided to form a thin film of a uniform thickness on a wafer, by uniformly maintaining the temperature of the entire surface of the wafer loaded to the load plate of the boat. CONSTITUTION: A lower plate is of a disc type. An end portion of one side of a plurality of load rods(36) is connected along the edge of the lower plate. An upper plate of a disc type is connected to an end portion of the other side of the load rods. A plurality of load plates(38) are attached to the load rods, separated from each other at regular intervals and in parallel with the lower and upper plates. Respective wafers(40) are loaded to the upper surface of the load plates.

Abstract translation: 目的：提供具有化学气相沉积（CVD）装置的负载板的船，以通过均匀地保持加载到负载板的晶片的整个表面的温度来形成在晶片上均匀厚度的薄膜 小舟。 构成：下板是盘型。 多个负载杆（36）的一侧的端部沿下板的边缘连接。 盘式的上板与负载棒的另一侧的端部连接。 多个负载板（38）连接到负载杆上，以规则的间隔彼此分开，并与下板和上板平行。 相应的晶片（40）被装载到负载板的上表面。

公开(公告)号：KR1020000021230A

公开(公告)日：2000-04-25

申请号：KR1019980040234

申请日：1998-09-28

Applicant: 삼성전자주식회사

Inventor： 최우경 ,  김동욱

IPC: G01K7/02

Abstract: PURPOSE: A complex type thermo conductive device for detecting the temperature of a furnace, and an apparatus for controlling temperature using thereof are provided to simplify the structure of an equipment by being embodied by a thermo conductive device of spark type to which the function of a thermo conductive device of paddle type. CONSTITUTION: Two thermo conductive wires(222,224) are installed in a protecting tube(240) for being insulated each other. Terminals(P1-P4) are installed under a terminal body(280) so that a current flow by a thermoelectric power which occurs in two thermo couple wires(222,224). The ceramic material of the protecting tube(240) to which a heat resistance is excellent. A molding body(260) supports the protecting body(240) and the ceramic material of a modeling body(260) to which a heat resistance is excellent.

Abstract translation: 目的：提供一种用于检测炉温的复合型热传导装置和使用其的温度控制装置，以通过由火花式的热传导装置体现设备的结构来简化其设备，其功能是 桨式导热装置。 构成：两根热导线（222,224）安装在保护管（240）中，以彼此绝缘。 端子（P1-P4）安装在端子主体（280）下方，以便通过发生在两个热电偶线（222,224）中的热电功率的电流流动。 保护管（240）的耐热性优异的陶瓷材料。 成型体（260）支撑保护体（240）和耐热性优异的造型体（260）的陶瓷材料。

公开(公告)号：KR1020000018373A

公开(公告)日：2000-04-06

申请号：KR1019980035933

申请日：1998-09-01

Applicant: 삼성전자주식회사

Inventor： 김동욱 ,  최우경

IPC: H01L21/205

Abstract: PURPOSE: A CVD(chemical vapor deposition) system is provided to improve a uniformity of thin film formed on a wafer by using a ring-type spray tube. CONSTITUTION: A CVD system comprises an inner tube(23), an outer tube(24), a gas spray unit and a gas exhaust pipe(28). The inner tube(23) includes a wafer boat(22) for loading a plurality of wafers(21). The gas spray unit further comprises a ring-type spray tube(25) having a plurality of spray inlet(27) surrounded to the wafer boat(22) and for supplying gases, and a gas supply source(26) connected to the ring-type spray tube(25). The gas exhaust pipe(28) is formed at the outer tube(24).

Abstract translation: 目的：提供CVD（化学气相沉积）系统，以通过使用环型喷射管来改善在晶片上形成的薄膜的均匀性。 构成：CVD系统包括内管（23），外管（24），气体喷射单元和排气管（28）。 内管（23）包括用于装载多个晶片（21）的晶片舟（22）。 所述气体喷射单元还包括环形喷射管（25），其具有围绕所述晶片舟（22）并用于供应气体的多个喷射入口（27），以及连接到所述环形喷嘴的气体供应源（26） 型喷雾管（25）。 排气管（28）形成在外管（24）处。

公开(公告)号：KR1019970063535A

公开(公告)日：1997-09-12

申请号：KR1019960004422

申请日：1996-02-24

Applicant: 삼성전자주식회사

Inventor： 최우경

IPC: H01L21/304

Abstract: 본 발명은 반도체 제조 장치용 버티칼 보트에 관한 것으로, 본 발명에 따른 버티칼 보트는 상부 원판 및 하부 원판과, 상기 상부 원판 및 하부 원판에 각각 양 단부가 고정된 3개의 바를 포함한다. 본 발명에 의하면, 바의 갯수가 종래에 배해 줄어서 웨이퍼의 긁힘에 의한 손상 또는 파티클 발생을 초래하는 개소가 줄어들게되므로, 품질 불량을 억제할 수 있고, 파티클 발생 여부를 체크해야 하는 개소가 줄어들게 되어, 보다 효율적인 공정을 할 수 있다.