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公开(公告)号：KR101634305B1
公开(公告)日：2016-06-29
申请号：KR1020100044062
申请日：2010-05-11
Applicant: 삼성전자주식회사 , 연세대학교 산학협력단
CPC classification number: H03H9/2463 , B82Y30/00 , H03H2009/02322
Abstract: 탄소계나노물질을이용한공진기가개시된다. 제안되는공진기는, 희생층이형성된기판및 희생층상에형성되고적어도하나의탄소계나노물질층및 적어도하나의실리콘카바이드(SiC)층을포함하는공진구조체를포함한다.
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公开(公告)号：KR1020130006121A
公开(公告)日：2013-01-16
申请号：KR1020110067971
申请日：2011-07-08
Applicant: 삼성전자주식회사 , 연세대학교 산학협력단
IPC: H01L21/768 , H01L27/04
CPC classification number: H01L23/66 , H01L23/53276 , H01L27/04 , H01L2223/6627 , H01L2924/0002 , H01L2924/00
Abstract: PURPOSE: A high frequency circuit adopting graphene and a driving method thereof are provided to minimize an electric loss due to an insulation layer in a high frequency domain by forming a via or trench on the lower side of a graphene interconnection part in a high frequency circuit. CONSTITUTION: A graphene interconnection part connects a first electronic device and a second electronic device and transmits a current at a frequency of 1 to 800MHz. A trench or via is formed on the lower side of the graphene interconnection part. The first electronic device transmits an electric signal to the second electronic device through the graphene interconnection part in a high frequency domain. The trench has a depth of 1 to 10000 nm.
Abstract translation: 目的：提供采用石墨烯的高频电路及其驱动方法，以通过在高频电路中的石墨烯互连部分的下侧形成通孔或沟槽来最小化由于高频域中的绝缘层引起的电损耗 。 构成：石墨烯互连部分连接第一电子装置和第二电子装置，并以1至800MHz的频率发送电流。 沟槽或通孔形成在石墨烯互连部分的下侧。 第一电子设备通过高频域中的石墨烯互连部件向第二电子设备发送电信号。 沟槽的深度为1〜10000nm。
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公开(公告)号：KR1020130006120A
公开(公告)日：2013-01-16
申请号：KR1020110067970
申请日：2011-07-08
Applicant: 삼성전자주식회사 , 연세대학교 산학협력단
IPC: H01L21/768 , H01L27/04
CPC classification number: H05K1/0242 , H01L23/53276 , H01L2924/0002 , H05K1/09 , H05K1/18 , H05K2201/0323 , H01L2924/00
Abstract: PURPOSE: A high frequency circuit adopting graphene and a driving method thereof are provided to maintain high conductivity and electron mobility by adopting a graphene interconnection part obtained by a chemical synthesis in a high frequency circuit. CONSTITUTION: A graphene interconnection part connects a first electronic component and a second electronic component. A distance between graphene layers is 0.34 nm or more. The first electron device transmits an electric signal to the second electronic component through a graphene interconnection part in a high frequency domain. The first electronic device and the second electronic device include transistors, respectively. The graphene interconnection part includes graphene composed of a parallel array.
Abstract translation: 目的：采用采用石墨烯的高频电路及其驱动方法，通过采用通过高频电路中的化学合成获得的石墨烯互连部件来保持高导电性和电子迁移率。 构成：石墨烯互连部分连接第一电子部件和第二电子部件。 石墨烯层之间的距离为0.34nm以上。 第一电子装置通过高频域中的石墨烯互连部件向第二电子部件发送电信号。 第一电子装置和第二电子装置分别包括晶体管。 石墨烯互连部分包括由并联阵列组成的石墨烯。
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公开(公告)号：KR1020090014031A
公开(公告)日：2009-02-06
申请号：KR1020070078251
申请日：2007-08-03
Applicant: 삼성전자주식회사
IPC: H01P7/08
CPC classification number: H01P7/08 , H01P1/20345 , H01P1/20363
Abstract: A nano resonator tuning a frequency by using DC power is provided to control a vibration frequency of a resonator according to the variation of the DC voltage. A beam with a sandwich structure is fixed on a silicon wafer(200). The beam with the sandwich structure generates the mechanical vibration according to the alternating current and the applied magnetic field. The AC power source(220) applies the AC voltage in both ends of the beam with the sandwich structure. The DC power source(230) applies the DC voltage in both ends of the beam with the sandwich structure. The beam with the sandwich structure includes a silicon carbide beam(211), a first metallic conductor(212) and a second metallic conductor(214). The first metallic conductor is deposited on the silicon carbide beam. Both ends of the first metallic conductor are connected to the AC power source. The second metallic conductor is deposited on the first metallic conductor. Both ends of the second metallic conductor are connected to the DC power source.
Abstract translation: 提供通过使用DC电力调谐频率的纳米谐振器，以根据DC电压的变化来控制谐振器的振动频率。 具有夹层结构的梁固定在硅晶片（200）上。 具有夹层结构的梁根据交流电和施加的磁场产生机械振动。 交流电源（220）将三角形结构的梁的两端的交流电压施加。 直流电源（230）将两端的直流电压施加到夹层结构上。 具有夹层结构的梁包括碳化硅梁（211），第一金属导体（212）和第二金属导体（214）。 第一金属导体沉积在碳化硅束上。 第一金属导体的两端连接到AC电源。 第二金属导体沉积在第一金属导体上。 第二金属导体的两端连接到直流电源。
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公开(公告)号：KR1020080105731A
公开(公告)日：2008-12-04
申请号：KR1020070053705
申请日：2007-06-01
Applicant: 삼성전자주식회사
IPC: H01P7/00
CPC classification number: H03H9/2463 , B82Y15/00 , H03H9/02244 , Y10S977/712 , Y10S977/72 , Y10S977/724 , Y10S977/932
Abstract: A nano-resonator using beam with composite structure is provided to supply sufficient resonance at quasi-resonant condition without a magnetic line induced from super-conduction. In a nano-resonator using beam with composite structure, a support layer(213), having a sandwich structure while having low density, is deposited on the silicon carbide resonator(211). A sacrificial layer(212) is used for the bond of two layers having capable of enduring the high frequency resonance, and a support layer(213) is composed of mental having low density. A beam of the composite structure includes the silicon carbide beam, the metallic conductor of the low density evaporated on the sacrificial layer and the sacrificial layer evaporated on the silicon carbide beam.
Abstract translation: 使用具有复合结构的光束的纳米谐振器被提供以在准谐振条件下提供足够的谐振，而没有由超导导致的磁线。 在使用具有复合结构的光束的纳米谐振器中，在碳化硅谐振器（211）上沉积具有夹层结构而具有低密度的支撑层（213）。 牺牲层（212）用于能够承受高频共振的两层的结合，并且支撑层（213）由具有低密度的精神构成。 复合结构的梁包括碳化硅束，在牺牲层上蒸发的低密度的金属导体和在碳化硅束上蒸发的牺牲层。
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Patent Agency Ranking
公开(公告)号：KR101890703B1
公开(公告)日：2018-08-22
申请号：KR1020120030096
申请日：2012-03-23
Applicant: 삼성전자주식회사 , 연세대학교 산학협력단
IPC: G01N27/00 , G01N27/447 , G01N33/483 , G01N33/66
CPC classification number: G01N27/44791 , B03C5/005 , B03C5/026 , B03C2201/26 , Y10T156/10
Abstract: 측정센서에관한것으로서, 무선주파수를이용한측정장치는무선주파수가제1 전극및 제2 전극에인가됨에따라발생하는전자의이동으로부터기판을보호하는보호층, 상기제1 전극및 상기제2 전극사이에형성된필드(field)에기초하여분극화된탄소소재의나노물질을이용하여채널을형성하는채널형성층및 상기탄소소재의나노물질의표면에부착된매개물질을이용하여글루코스를센싱하는센싱층을포함한다.
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公开(公告)号：KR1020130125916A
公开(公告)日：2013-11-20
申请号：KR1020120049543
申请日：2012-05-10
Applicant: 삼성전자주식회사 , 연세대학교 산학협력단
CPC classification number: G01N27/08 , A61B5/05 , A61B5/053 , A61B5/14532 , A61B5/14546 , G01N27/02 , G01N27/07 , G01N27/226
Abstract: A device for measuring radio frequency (RF) properties of biomaterials and a method thereof are disclosed. The device for measuring the RF properties of the biomaterials includes a micro-channel providing a flow path of biological samples and a sensing unit formed on the flow path and in which the biological samples touch. A first signal electrode delivers a RF signal to a first area of the sensing unit and a second signal electrode delivers the RF signal to a second area of the sensing unit. [Reference numerals] (AA,BB) AC signal
Abstract translation: 公开了一种用于测量生物材料的射频（RF）特性的装置及其方法。 用于测量生物材料的RF性质的装置包括提供生物样品的流动路径的微通道和形成在流路上并且其中生物样品接触的感测单元。 第一信号电极将RF信号传送到感测单元的第一区域，并且第二信号电极将RF信号传送到感测单元的第二区域。 （附图标记）（AA，BB）AC信号
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公开(公告)号：KR1020130107915A
公开(公告)日：2013-10-02
申请号：KR1020120030096
申请日：2012-03-23
Applicant: 삼성전자주식회사 , 연세대학교 산학협력단
IPC: G01N27/00 , G01N27/447 , G01N33/483 , G01N33/66
CPC classification number: G01N27/44791 , B03C5/005 , B03C5/026 , B03C2201/26 , Y10T156/10
Abstract: PURPOSE: A sensing device using radio frequencies and a manufacturing method thereof are provided to directly sense glucose by using radio frequency signals applied to an electrode, thereby accurately measuring concentration without additional materials. CONSTITUTION: A sensing device using radio frequencies includes a protective layer (120), a channel forming layer (150), and a sensing layer (160). The protective layer protects a substrate from the movement of an electron generated when the radio frequencies are applied to a first electrode (131) and a second electrode (133). The channel forming layer forms channels by using carbon nanomaterials polarized based on a field formed between the first and second electrodes. The sensing layer senses glucose by using a medium material attached on the surface of the carbon nanomaterials.
Abstract translation: 目的：提供使用无线电频率的感测装置及其制造方法，通过使用施加到电极的射频信号直接感测葡萄糖，从而在没有附加材料的情况下精确地测量浓度。 构成：使用射频的感测装置包括保护层（120），沟道形成层（150）和感测层（160）。 保护层保护基板免受当将射频施加到第一电极（131）和第二电极（133）时产生的电子的移动。 通道形成层通过使用基于形成在第一和第二电极之间的场极化的碳纳米材料形成通道。 感测层通过使用附着在碳纳米材料表面上的介质材料感测葡萄糖。
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公开(公告)号：KR1020090048186A
公开(公告)日：2009-05-13
申请号：KR1020070114456
申请日：2007-11-09
Applicant: 삼성전자주식회사
IPC: H01L21/302
CPC classification number: H03B28/00 , B44C1/227 , H01L23/66 , H01L2223/6627 , H01L2924/0002 , H01L2924/1903 , H01L2924/00
Abstract: 제1 기판의 어느 한 면에 제1 마스크 패턴을 형성하는 단계; 상기 제1 마스트 패턴을 식각 마스크로 하여 상기 제1 기판을 식각하여 홀을 형성하는 단계; 제2 기판의 어느 한 면에 제2 마스크 패턴을 형성하는 단계; 상기 제2 마스크 패턴을 식각 마스크로 하여 상기 제2 기판을 미리 설정된 깊이만큼 식각하여 홀을 형성하는 단계; 상기 제1 기판의 식각된 면이 상기 제2 기판의 식각된 면에 접합되도록 상기 제1 기판 및 상기 제2 기판을 접합하는 단계; 상기 제2 기판에 제3 마스크 패턴을 형성하는 단계; 및 상기 제3 마스크 패턴을 식각 마스크로 하여 상기 제2 기판을 식각하여, 상기 제2 기판을 관통하는 홀을 형성하는 단계를 포함하는 다단계 기판 식각 방법이 개시된다. 본 발명의 일 실시예에 따른 다단계 기판 식각 방법을 사용하면, 식각 후 바닥면에 곡률 반경이 생기거나 단차면에서 오버행(overhang) 구조가 생성되는 것을 방지할 수 있어 식각 품질을 개선할 수 있고, 각 기판에 위치한 얼라인 키를 사용하여 기판을 정교하게 접합할 수 있으며, 다층(multi-layer) 공정이 가능한 이점이 있다.
식각, 발진기, 테라헤르츠, 공융-
公开(公告)号：KR1020090011222A
公开(公告)日：2009-02-02
申请号：KR1020070074593
申请日：2007-07-25
Applicant: 삼성전자주식회사
IPC: H01L21/306
CPC classification number: H01P11/003 , Y10T428/24802
Abstract: A method for etching multi-stage substrate and a terahertz radiation source using the same are provided to improve etching quality by minimizing a radius of curvature of an edge. A oxide film(310) is formed on a first substrate(300). A photoresist coating is formed on one surface of the first substrate. An align key pattern(330) is formed on a photoresist coated surface. A first mask pattern is formed on an opposite surface of the photoresist coated surface. A hole is formed by etching the first substrate with the first mask pattern as an etching mask. A second substrate(350) is contacted with the first substrate. A second mask pattern is formed on the second substrate. A hole is formed by etching the second substrate with the second mask pattern as an etching mask. An oxide film having etching selection ratio between the first substrate and the second substrate is removed.
Abstract translation: 提供了使用其蚀刻多级衬底和太赫兹辐射源的方法，以通过使边缘的曲率半径最小化来提高蚀刻质量。 氧化膜（310）形成在第一基板（300）上。 在第一基板的一个表面上形成光刻胶涂层。 在光致抗蚀剂涂覆的表面上形成对准键图案（330）。 在光致抗蚀剂涂覆表面的相对表面上形成第一掩模图案。 通过用第一掩模图案作为蚀刻掩模蚀刻第一基板来形成孔。 第二基板（350）与第一基板接触。 在第二基板上形成第二掩模图案。 通过用第二掩模图案蚀刻第二衬底作为蚀刻掩模形成孔。 除去具有第一基板和第二基板之间的蚀刻选择比的氧化物膜。
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