Abstract:
PURPOSE: A graphene electric component equipped with a plurality of graphene channel layers is provided to increase current transition speed between a drain electrode and a source electrode by forming the plurality of graphene channel layers into a double layer structure. CONSTITUTION: A gate electrode(120) is formed on a substrate(110). A first gate insulating layer(131) covering the gate electrode is formed on the substrate. A first graphene channel layer(141) is formed on the first gate insulating layer. A second gate insulating layer(132) is formed on the first graphene channel layer. A second graphene channel layer(142) is formed on the second gate insulating layer. A source electrode(150) and a drain electrode(160) are formed on the first graphene channel layer and the second graphene channel layer.
Abstract:
PURPOSE: A receiver for an interleave division multiplexing cooperative diversity is provided to make a relay terminal selectively participate in a network. CONSTITUTION: A detecting unit detects each signal transmitted from relays. A de-interleaver(320) de-interleaves the detected signals. A decoder decodes the de-interleaved signal, and outputs the signal. An interleaver(350) interleaves the decoded signal, and outputs the signal. A detection unit receives the interleaved signal, compares with the detected signals, and distinguishes the original signal transmitted from the transmitter.
Abstract:
데이터를 송신하는 송신기 및 상기 데이터를 수신하는 수신기를 포함하고, 상기 송신기는 부분 응답 인코딩(partial response coding, PRC)을 수행하는 부분 응답 코딩 유닛을 포함하는 것을 특징으로 하는 알라모우티(Alamouti) 공간 주파수 블록 코딩(SFBC)-직교 주파수 분할 다중화(OFDM) 시스템 및 통신 방법이 개시된다. 본 발명에 따른 알라모우티 SFBC-OFDM 시스템 및 방법을 사용하여, 종래의 SFBC-OFDM 시스템 및 방법에 비하여 부반송파간 간섭(Inter-carrier interference, ICI)이 감소하므로, 심볼 에러율(symbol error rate, SER) 성능이 향상되고, 에러 플로어(error floor)가 낮아지는 효과가 있다. 알라모우티, SFBC, OFDM, ICI, 부분 응답 코딩
Abstract:
A base station according to an embodiment of the present invention includes: an antenna receiving the channel information from respective terminals; a computation unit which computes the disable probability values for the terminals respectively based on the channel information; and a determination unit which obtains respective signal transmission methods for the respective terminals based on the disable probability valve. When a terminal performing a role of a repeater is allocated to each of the terminals, the computation unit calculates the respective disable probability values for the cases that the terminal performing the role of the repeater is not allocated. The antenna transmits the repeater allocation information based on the respective signal transmission methods for the respective terminals to the terminals.
Abstract:
PURPOSE: A multi-source cooperative method and a multi-source cooperative system using opportunistic source selection method are provided to simultaneously obtain space diversity and time diversity gain using queue of each terminal. CONSTITUTION: A control unit divides each time slot into a plurality of sub time slots(S1). A terminal transmits signal which is capable of being received to each terminal(S2). The control unit determines optimal terminal in the corresponding sub time slot(S6). A distributed timer is completed earlier than other timers in the optimal terminal. The optimal terminal transmits a data block to a receiver(S7).
Abstract:
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve applicability of a high speed operation element by forming an inter layer dielectric and a gate insulating layer by using different material. CONSTITUTION: A gate electrode(12) is formed on a substrate(10). The gate electrode comprises a projected gate finger. A gate insulating layer(13) is formed on the gate electrode. An inter-layer insulating film(11) is formed on the side of the gate insulating layer and the gate electrode. The inter-layer insulating film comprises a material having dielectric permittivity lower than the gate insulating layer. A graphene layer(14) is formed on the gate insulating layer and the inter-layer insulating film. A source(15a) and a drain(15b) are formed on the graphene layer. Graphene is formed in the lower side of the graphene layer between the source and drain.