公开(公告)号：KR101263666B1

公开(公告)日：2013-05-22

申请号：KR1020110074044

申请日：2011-07-26

Applicant: 아주대학교산학협력단

Inventor： 조성운 ,  김창구

IPC: H01L21/28

Abstract: 본발명에따른반도체장치의콘택홀형성방법은절연막이형성된반도체기판상에마스크패턴을형성하는제1단계; 상기마스크의벽면및 상부에불화탄소함유플라즈마를이용하여제1 보호막을증착하는제2단계; 상기제1 보호막을식각마스크로하여불화탄소함유플라즈마를이용하여상기절연막을식각하여콘택홀을형성하는제3단계; 및상기제1보호막과콘택홀벽에불화탄소함유플라즈마를이용하여제2 보호막을증착하는제4단계를포함하고, 상기제1단계의마스크패턴은무정형탄소막(amorphous carbon layer, ACL) 이며, 상기제3단계와상기제4단계는순차적으로 2회이상반복하는것을특징으로한다.

公开(公告)号：KR1020130012717A

公开(公告)日：2013-02-05

申请号：KR1020110074044

申请日：2011-07-26

Applicant: 아주대학교산학협력단

Inventor： 조성운 ,  김창구

IPC: H01L21/28

CPC classification number: H01L21/76802 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76831

Abstract: PURPOSE: A method for forming a contact hole in a semiconductor device is provided to control deposition time and easily control the diameter of a contact hole. CONSTITUTION: An amorphous carbon layer mask pattern is formed on a semiconductor substrate(S1). A first protection film is deposited on the wall and the upper part of the mask by using plasma including carbon fluoride(S2). An insulating layer is etched using the plasma to form a contact hole(S3). A second protection film is deposited on the first protection film and the wall of the contact hole(S4) by using the plasma. [Reference numerals] (S1) Forming an ACL mask; (S2,S4) Depositing a plasma protective film; (S3) Etching plasma

Abstract translation: 目的：提供一种在半导体器件中形成接触孔的方法，以控制沉积时间并容易地控制接触孔的直径。 构成：在半导体衬底上形成无定形碳层掩模图案（S1）。 通过使用包含氟化碳的等离子体（S2）将第一保护膜沉积在掩模的壁和上部上。 使用等离子体蚀刻绝缘层以形成接触孔（S3）。 通过使用等离子体，将第二保护膜沉积在第一保护膜和接触孔的壁（S4）上。 （附图标记）（S1）形成ACL掩模; （S2，S4）沉积等离子体保护膜; （S3）蚀刻等离子体

公开(公告)号：KR101409387B1

公开(公告)日：2014-06-20

申请号：KR1020130005075

申请日：2013-01-16

Applicant: 아주대학교산학협력단

Inventor： 조성운 ,  김창구

IPC: H01L21/3065

CPC classification number: B81C1/00031 ,  B81B2203/0361 ,  G02B1/005 ,  H01J37/32403 ,  H01J37/32422 ,  H01J37/32623 ,  H01J37/32651 ,  H01L21/288 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/32137

Abstract: The present invention relates to a method for fabricating a slanted copper nanorod. The method for fabricating a slanted copper nanorod includes the following steps: fabricating a sample having a structure including an etch stop layer on a wafer; etching the sample by positioning the sample in a slanted form; forming a copper film on the slanted sample by plating; removing an excessively plated part of the copper film; and removing a poly silicon except for copper from a surface of the sample. According to the present invention, the slanted copper nanorod can be fabricated in a larger size as compared with an existing method so that a nanostructure having superior processing yield and a uniform array can be formed. An angle and a diameter of a copper nanorod can be freely controlled so that applicability of the copper nanorod is very high. The present invention is applicable to a process of manufacturing various devices such as semiconductor devices, micro electro mechanical systems (MEMS), optical devices, gas detectors, and display devices.

Abstract translation: 本发明涉及一种制造倾斜铜纳米棒的方法。 制造倾斜铜纳米棒的方法包括以下步骤：在晶片上制造具有包括蚀刻停止层的结构的样品; 通过将样品定位为倾斜形式来蚀刻样品; 通过电镀在倾斜样品上形成铜膜; 去除铜膜过电镀部分; 以及从所述样品的表面除去除了铜之外的多晶硅。 根据本发明，与现有方法相比，可以制造更大尺寸的倾斜铜纳米棒，从而可以形成具有优异加工成品率和均匀阵列的纳米结构。 可以自由地控制铜纳米棒的角度和直径，使得铜纳米棒的适用性非常高。 本发明可应用于制造诸如半导体器件，微机电系统（MEMS），光学器件，气体检测器和显示器件的各种器件的工艺。

公开(公告)号：KR101623654B1

公开(公告)日：2016-05-23

申请号：KR1020140165011

申请日：2014-11-25

Applicant: 아주대학교산학협력단

Inventor： 김창구 ,  조성운 ,  김준현

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01L21/3081 ,  H01L21/30655 ,  H01L21/76825 ,  H01L21/76826

Abstract: 실리콘기판의원하는부분을식각하는실리콘기판식각방법에있어서, 본발명의실리콘기판식각방법은실리콘기판상에식각마스크를형성하는단계; 할로겐기초가스, 불화탄소가스및 산소를포함하는제1 가스를준비하는단계; 및상기제1 가스를상기기판상에플라즈마처리하여상기기판을식각하는단계;를포함할수 있다.

Abstract translation: 在使用等离子体气体蚀刻硅衬底以蚀刻硅衬底的期望部分的方法中，根据本发明的用于蚀刻硅衬底的方法可以包括在硅衬底上形成蚀刻掩模的步骤; 制备包括卤素基础气体，氟化碳气体和氧气的第一气体的步骤; 以及通过对衬底上的第一气体进行等离子体处理来蚀刻衬底的步骤。 因此，可以提供具有优异性能的各向异性蚀刻的硅衬底。

公开(公告)号：KR1020150015130A

公开(公告)日：2015-02-10

申请号：KR1020130090733

申请日：2013-07-31

Applicant: 아주대학교산학협력단

Inventor： 조성운 ,  김창구

IPC: C23C18/22 ,  C23C18/31 ,  C23F4/00 ,  H01L21/3065

CPC classification number: C23F1/12 ,  B22F1/0018 ,  B22F1/0044 ,  B22F9/02 ,  B22F2001/0037 ,  B22F2304/05 ,  B81C1/00492 ,  B81C2201/0187 ,  B81C2201/034 ,  C23C18/1605 ,  C23C18/1657 ,  C23C18/1893 ,  C23C18/405 ,  C23F4/00 ,  H01J2237/0203 ,  H01J2237/3341 ,  H01L21/288 ,  Y10T29/49982

Abstract: The present invention relates to a method of forming a three-dimensional copper nanostructure which includes steps of: manufacturing a test piece in a structure including an SiO2 mask; etching a plasma inclined in multiple directions to form a three-dimensional etching structure layer on the test piece; coating to enable metal to be filled in the portion in which the plasma inclined in multiple directions is etched; removing an overcoated portion and the SiO2 mask from the metal; and removing portions besides the metal which is the three-dimensional etching structure layer from the surface of the test piece. According to the present invention, to overcome a limitation of a focused ion beam etching (FIBE) method for manufacturing a copper nanostructure, a high-density plasma is used for etching the plasma inclined in multiple directions on a large test piece arranged on a faraday box, a copper film is formed on a gap of the etched test piece, and the overcoated copper film and the SiO2 mask are removed, thereby forming uniform arrays of a copper nanostructure, and being able to randomly control a diameter of the copper nanostructure for high applicability.

Abstract translation: 本发明涉及一种形成三维铜纳米结构的方法，包括以下步骤：在包括SiO 2掩模的结构中制造试片; 蚀刻沿多个方向倾斜的等离子体，在试片上形成三维蚀刻结构层; 涂覆以使金属能够被填充在其中等离子体在多个方向上倾斜的部分被蚀刻; 从金属中除去外涂部分和SiO 2掩模; 从该试片的表面除去作为三维蚀刻结构层的金属以外的部分。 根据本发明，为了克服用于制造铜纳米结构的聚焦离子束蚀刻（FIBE）方法的限制，使用高密度等离子体在布置在法拉第的大型试片上蚀刻沿多个方向倾斜的等离子体 在蚀刻试验片的间隙上形成铜膜，除去外涂铜膜和SiO 2掩模，形成均匀的铜纳米结构体阵列，能够随机控制铜纳米结构体的直径 适用性高。