-
公开(公告)号：KR1020100128892A
公开(公告)日：2010-12-08
申请号：KR1020090047557
申请日：2009-05-29
Applicant: 전자부품연구원
IPC: H01L29/786
CPC classification number: H01L29/78696 , H01L29/41733 , H01L29/7869 , H01L51/0558 , H01L51/105
Abstract: PURPOSE: A manufacturing method of thin film transistor and a thin film transistor manufactured by the same are provided to be applied to an OLED(Organic Light Emitting Diode) requiring great amount of current by offering a short channel thin film transistor having a channel width of less than 1μm while using general exposing device. CONSTITUTION: A gate electrode(120), a gate insulating layer(130), and a source electrode(140) are successively formed on a substrate(110). A photoresist layer for forming the channel region on the source electrode is formed. The source electrode is etched on the gate insulating layer in order to form the drain electrode.
Abstract translation: 目的：提供一种薄膜晶体管及其制造的薄膜晶体管的制造方法，其应用于需要大量电流的OLED（有机发光二极管），其通过提供具有沟道宽度的短沟道薄膜晶体管 使用一般曝光装置时小于1μm。 构成：在基板（110）上依次形成栅电极（120），栅极绝缘层（130）和源电极（140）。 形成用于在源电极上形成沟道区的光致抗蚀剂层。 在栅极绝缘层上蚀刻源电极以形成漏电极。
-
公开(公告)号：KR1020080047923A
公开(公告)日：2008-05-30
申请号：KR1020060117953
申请日：2006-11-27
Applicant: 전자부품연구원
IPC: H01L27/146 , H01L31/10
CPC classification number: H01L27/14612 , H01L27/1229 , H01L27/1251 , H01L27/1255 , H01L27/1259 , H01L27/1274
Abstract: An optical detection sensor and a manufacturing method thereof are provided to downsize a switching transistor by forming the switching transistor using polycrystalline silicon. A storage capacitor stores charges generated from an amorphous silicon thin film transistor, and a polycrystalline silicon thin film transistor is switched to shift the charges stored in the storage capacitor. The polycrystalline silicon thin film transistor includes a polycrystalline silicon island(231) with a doped region for an ohmic contact, a first interlayer dielectric(240) enclosing the polycrystalline silicon island, a switching gate electrode(251) formed on the first interlayer dielectric, and a second interlayer dielectric(260) formed on the first interlayer dielectric. The first and second interlayer dielectrics are etched to form a pair of trenches exposing the doped region. A source electrode(331) and a drain electrode(332) are formed in the trenches.
Abstract translation: 提供光学检测传感器及其制造方法，通过使用多晶硅形成开关晶体管来缩小开关晶体管的尺寸。 存储电容器存储从非晶硅薄膜晶体管产生的电荷，并且切换多晶硅薄膜晶体管以移位存储在存储电容器中的电荷。 多晶硅薄膜晶体管包括具有用于欧姆接触的掺杂区域的多晶硅岛（231），封装多晶硅岛的第一层间电介质（240），形成在第一层间电介质上的开关栅电极（251） 和形成在第一层间电介质上的第二层间电介质（260）。 蚀刻第一和第二层间电介质以形成暴露掺杂区域的一对沟槽。 源极电极（331）和漏电极（332）形成在沟槽中。
-
公开(公告)号：KR100822270B1
公开(公告)日：2008-04-16
申请号：KR1020060130796
申请日：2006-12-20
Applicant: 전자부품연구원
IPC: H01L29/786
CPC classification number: H01L29/41733 , H01L29/458 , H01L29/78678
Abstract: A thin film transistor and a manufacturing method thereof are provided to improve an electrical characteristic by reducing contact resistance between a semiconductor layer and a second source electrode. A gate electrode(110) is formed on a substrate(100), and a gate insulating layer(120) is formed on the substrate to enclose the gate electrode. A first source electrode(131) and a first drain electrode(141) are formed on the gate insulating layer. A second source electrode(135) is formed on the first source electrode, and has a first extension(137) floated from the gate insulating layer. A second drain electrode(145) is formed on the first drain electrode, and has a second extension(147) floated from the gate insulating layer. A semiconductor layer(150) is formed on the gate insulating layer in the region where the first and second source electrodes are spaced apart from the first and second drain electrodes.
Abstract translation: 提供一种薄膜晶体管及其制造方法，以通过降低半导体层和第二源电极之间的接触电阻来改善电特性。 在基板（100）上形成栅电极（110），在基板上形成栅极绝缘层（120）以包围栅电极。 第一源电极（131）和第一漏电极（141）形成在栅极绝缘层上。 第二源电极（135）形成在第一源极上，并且具有从栅极绝缘层浮起的第一延伸部（137）。 在第一漏电极上形成第二漏电极（145），并且具有从栅极绝缘层浮起的第二延伸部（147）。 在第一和第二源极与第一和第二漏极间隔开的区域中，在栅极绝缘层上形成半导体层（150）。
-
公开(公告)号：KR1020060075644A
公开(公告)日：2006-07-04
申请号：KR1020040114464
申请日：2004-12-28
Applicant: 전자부품연구원
IPC: H01L29/786
CPC classification number: H01L29/78603 , H01L21/02675 , H01L21/2007 , H01L21/2026 , H01L21/2033 , H01L27/1266
Abstract: 본 발명은 다결정 실리콘 박막 트랜지스터의 제조 방법에 관한 것으로, 스퍼터링으로 비정질 실리콘 박막을 형성하기 때문에, 그 비정질 실리콘 박막에는 수소의 함량이 거의 없어, 탈수소화 공정을 생략하여 고분자 기판의 변형 및 비정질 실리콘 박막에서 크랙의 발생을 방지할 수 있어 소자의 특성이 우수해지는 효과가 있다.
다결정, 실리콘, 수소, 스퍼터링, 변형-
公开(公告)号：KR1020040044755A
公开(公告)日：2004-05-31
申请号：KR1020020072926
申请日：2002-11-22
Applicant: 전자부품연구원
IPC: G02F1/1333
CPC classification number: G02F1/133345 , G02F1/1333 , G02F2202/02 , G02F2202/09
Abstract: PURPOSE: A double structure insulation film mixed organic and inorganic is provided to reduce a surface distortion of a substrate by stacking an organic insulation layer on the substrate. CONSTITUTION: A gas barrier layer(2) is formed on a polymer substrate(1). A gate electrode(3) is formed on the gas barrier layer(2). An organic insulation layer(4) is formed on the gate electrode(3). An inorganic insulation layer(5) is formed on the organic insulation layer(4). A source-drain electrode(6) and a semiconductor layer(7) used as a thin film transistor are formed on the inorganic insulation layer(5). The organic insulation layer(4) is made of anyone material of polycarbonate, polyimide and acryl which have below 2.5GPa of Young's module and superior mechanical and electrical characteristics. The inorganic insulation layer(5) is made of SiO2 having 80-100GPa of Young's module and its thickness is within 200nm.
Abstract translation: 目的：提供混合有机和无机的双重结构绝缘膜，以通过在基板上层叠有机绝缘层来减小基板的表面变形。 构成：在聚合物基材（1）上形成阻气层（2）。 在阻气层（2）上形成栅电极（3）。 在栅电极（3）上形成有机绝缘层（4）。 在有机绝缘层（4）上形成无机绝缘层（5）。 在无机绝缘层（5）上形成用作薄膜晶体管的源 - 漏电极（6）和半导体层（7）。 有机绝缘层（4）由聚碳酸酯，聚酰亚胺和丙烯酸树脂的任何材料制成，其杨氏模量小于2.5GPa，具有优异的机械和电气特性。 无机绝缘层（5）由具有80-100GPa的杨氏模块的SiO 2制成，其厚度在200nm以内。
-
Patent Agency Ranking
公开(公告)号：KR100385401B1
公开(公告)日：2003-05-23
申请号：KR1020010008476
申请日：2001-02-20
Applicant: 전자부품연구원 , 주식회사 이노터치테크놀로지
Abstract: PURPOSE: A touch panel of a 5-wired electrode analogue resistor film method is provided to maintain a valid operation area having a sufficient straight property by separating a resistor chain of a touch panel of a 5-wired electrode system from new-formed voltage security pattern, extending a valid operation area of a sensor, and securing/changing a unit size and a voltage security pattern of the resistor chain. CONSTITUTION: A uniform resistor film(10) of a touch panel is formed on a base plate(12). A connection sheet is formed at the lower surface of a film using a transparent conductive film and combined on the resistor film(10) through the medium of an insulation frame at a predetermined interval. A resistor element(50) is arrayed for being overlapped with an adjacent unit according to units by making a predetermined formed unit(52) be formed as a discontinuously chain for exceeding an increasing rate of a surface area of a sensor, thereby supplying a linear output response by reducing a curve of equipotential lines according to the edge of the sensor. A voltage securing pattern(60) is arrayed for compensating a voltage deviation at an irregular interval by a detailed pattern through an etching of a surface of the resistor film(10) according to the inner edge of the resistor element(50) at a form completely separated from the resistor element(50).
Abstract translation: 目的：通过将5线电极系统的触摸面板的电阻器链与新形成的电压安全性分开来提供5线电极模拟电阻膜方法的触摸面板，以保持具有足够直线性的有效操作区域 模式，扩展传感器的有效操作区域，以及确保/改变电阻器链的单元尺寸和电压安全模式。 构成：触板的均匀电阻膜（10）形成在基板（12）上。 使用透明导电膜在膜的下表面形成连接片，并通过绝缘框架的介质以预定的间隔将该连接片组合在电阻膜（10）上。 通过使预定的成形单元（52）形成为不连续链以超过传感器的表面积的增加率，将电阻元件（50）排列成与相邻单元按照单元重叠，由此提供线性 通过根据传感器的边缘减少等势线的曲线来实现输出响应。 通过根据电阻器元件（50）的内边缘蚀刻电阻器膜（10）的表面，形成电压保护图案（60）以通过详细图案补偿不规则间隔处的电压偏差 与电阻元件（50）完全分离。
-
公开(公告)号：KR1020020089082A
公开(公告)日：2002-11-29
申请号：KR1020010028414
申请日：2001-05-23
Applicant: 전자부품연구원
Abstract: PURPOSE: A method for manufacturing barrier ribs for a plasma sign display is provided to reduce barrier rib manufacturing procedures by easily forming an insulation film and barrier ribs at the substrate through the use of a squeeze device and open mask. CONSTITUTION: A method comprises the steps of forming a metal electrode(6) onto a glass substrate(10); and disposing an open mask at the glass substrate where the metal electrode is formed, and forming an insulation layer(7b) and barrier ribs(7a) at the same time by using a squeeze device(20) with a mold(22) of a predetermined shape. The insulation layer and barrier ribs are made of a powder paste obtained by synthesizing an insulating material and a binder. The insulating material is BaTiO3, Y2O3 or Al2O3. Since the insulation film and barrier ribs are simultaneously formed through the use of the squeeze device having a predetermined shape, the necessity of repeating screen printing is eliminated, to thereby simplify manufacturing procedures.
Abstract translation: 目的：提供一种用于制造等离子体标志显示器的隔壁的方法，以通过使用挤压装置和开口掩模在基板上容易地形成绝缘膜和阻挡肋来减少隔壁制造程序。 构成：一种方法包括在玻璃基板（10）上形成金属电极（6）的步骤; 并且在形成金属电极的玻璃基板上设置开口掩模，并且通过使用具有模具（22）的挤压装置（20）同时形成绝缘层（7b）和阻挡肋（7a） 预定形状。 绝缘层和隔壁由通过合成绝缘材料和粘合剂获得的粉末糊料制成。 绝缘材料为BaTiO3，Y2O3或Al2O3。 由于通过使用具有预定形状的挤压装置同时形成绝缘膜和隔肋，因此消除了重复丝网印刷的必要性，从而简化了制造步骤。
-
公开(公告)号：KR1020020078317A
公开(公告)日：2002-10-18
申请号：KR1020010018655
申请日：2001-04-09
Applicant: 전자부품연구원
IPC: H01J17/00
Abstract: PURPOSE: A method for manufacturing plasma sign display is provided to manufacture display products having a high resolution at a low cost. CONSTITUTION: A method comprises a first step of producing a lower substrate by forming a metal electrode onto a glass substrate and an insulator onto the glass substrate; a second step of producing an upper substrate by forming a transparent electrode and a sub-metal electrode onto the glass substrate, coating the transparent electrode and the sub-metal electrode with a transparent insulator, coating the transparent insulator with a phosphor, forming a black matrix to the square part of the phosphor and aligning a ball space(S11) to the specific part of the black matrix; and a third step of producing a panel by vacuum sealing the lower substrate and upper substrate through a glass frit, and injecting a gas to the panel.
Abstract translation: 目的：提供一种用于制造等离子体显示器的方法，以低成本制造具有高分辨率的显示产品。 构成：一种方法包括：通过在玻璃基板上形成金属电极和将绝缘体形成在玻璃基板上来制造下基板的第一步骤; 通过在玻璃基板上形成透明电极和亚金属电极来制造上基板的第二步骤，用透明绝缘体涂覆透明电极和亚金属电极，用荧光体涂覆透明绝缘体，形成黑色 矩阵到磷光体的正方形部分，并将球空间（S11）与黑矩阵的特定部分对准; 以及通过玻璃料将所述下基板和上基板真空密封并将气体注入所述面板来制造面板的第三步骤。
-
公开(公告)号：KR100288082B1
公开(公告)日：2001-06-01
申请号：KR1019970068058
申请日：1997-12-12
Applicant: 전자부품연구원
IPC: H01J31/15
Abstract: PURPOSE: A field emission display device is provided to reduce power consumption of a field emission display device by simplifying a structure of an electrode of the field emission display device. CONSTITUTION: A black matrix(90) for defining a main pixel(P) of a matrix shape and three sub-pixels within the main pixel(P) is formed on an upper portion of a transparent insulating substrate(60). A multitude of anode(71,72,73) are formed within the sub-pixels. The anodes(71,72,73) are used for inducing electrons emitted in sub-pixel units. R, G, and B fluorescent materials(81,82,83) having the same patterns as the anodes(71,72,73) are formed on upper portion of the anodes(71,72,73). R, G, and B connection portions(10,20,30) are formed on the same layer as the anode in order to connect one of the anodes(71,72,73).
-
公开(公告)号：KR1020000041834A
公开(公告)日：2000-07-15
申请号：KR1019980057841
申请日：1998-12-23
Applicant: 전자부품연구원
IPC: H01J1/30
Abstract: PURPOSE: A field emission display device comprising a focusing electrode is provided to improve the image quality without forming a black matrix. CONSTITUTION: A field emission display device includes: a cathode substrate(1) and an anode substrate(6) facing each other; a cathode electrode(2) and a gate electrode(4) formed on the cathode substrate; an emitter(5) formed on the cathode electrode; an anode electrode(7) formed on a bottom surface of the anode substrate; an insulation film(3) formed on a bottom surface of the anode electrode; a fluorescent film formed on a bottom surface of the anode electrode revealed between the insulation films; and a focusing electrode(21) which is formed on a bottom surface of the insulation film and focuses emitted electrons into a desired pixel direction. According to the field emission display device, the image quality of high definition can be obtained by improving the focusing function of the focusing electrode.
Abstract translation: 目的：提供包括聚焦电极的场发射显示装置，以改善图像质量而不形成黑矩阵。 构成：场发射显示装置包括：阴极基板（1）和阳极基板（6），其彼此面对; 阴极电极（2）和形成在阴极基板上的栅电极（4）; 形成在所述阴极电极上的发射极（5） 形成在阳极基板的底面上的阳极电极（7） 形成在所述阳极电极的底面上的绝缘膜（3） 形成在阳极电极的底面上的荧光膜，在绝缘膜之间露出; 以及聚焦电极（21），其形成在所述绝缘膜的底表面上并将发射的电子聚焦到期望的像素方向。 根据场发射显示装置，通过提高聚焦电极的聚焦功能可以获得高分辨率的图像质量。
-
-
-
-
-
-
-
-
-
Search Results
124
records
(took 0.024 seconds)
