-
公开(公告)号：KR1020140070904A
公开(公告)日：2014-06-11
申请号：KR1020120137249
申请日：2012-11-29
Applicant: 전자부품연구원 , 서울대학교산학협력단
CPC classification number: F03G7/005 , H02N11/002
Abstract: The present invention relates to a rotary energy converting apparatus and, more specifically, to an apparatus and a method for converting mechanic energy into electric energy by applying an opposite phenomenon to an electrowetting phenomenon. The rotary energy converting apparatus changes a contact surface with liquid between a pair of electrodes and utilizes the changing of the contact surface with liquid for generating electric power so that the blockage of a channel is prevented or a lubricating layer or an electrode complexly patterned on the channel is not required, thereby being simplified and making an energy converting apparatus which reduces production costs and generates less malfunction.
Abstract translation: 旋转能量转换装置技术领域本发明涉及一种旋转能量转换装置，更具体地说，涉及一种将机械能转化为电能的装置和方法，该装置和方法通过对电润湿现象施加相反的现象。 旋转能量转换装置在一对电极之间改变与液体的接触表面，利用与液体的接触表面的变化来产生电力，从而防止通道堵塞或润滑层或电极复合地图案化 通道是不需要的，从而被简化并且制造能降低生产成本并产生较少故障的能量转换装置。
-
公开(公告)号：KR1020140069537A
公开(公告)日：2014-06-10
申请号：KR1020120136893
申请日：2012-11-29
Applicant: 전자부품연구원 , 서울대학교산학협력단
CPC classification number: H02N11/002 , F03G7/005 , H02N1/08
Abstract: The present invention relates to a flexible energy converting apparatus using liquid and, more specifically, to a method and an apparatus for converting mechanic energy into electric energy by applying an opposite phenomenon to an electrowetting phenomenon. The flexible energy converting apparatus using liquid changes a contact surface with liquid between a pair of electrodes and utilizes the changing of the contact surface with liquid for generating electric power so that the blockage of a channel is prevented or a lubricating layer or an electrode complexly patterned on the channel is not required, thereby being simplified and making an energy converting apparatus which reduces production costs and generates less malfunction.
Abstract translation: 本发明涉及一种使用液体的柔性能量转换装置，更具体地说，涉及一种将机械能转化为电能的方法和装置，其应用与电润湿现象相反的现象。 使用液体的柔性能量转换装置改变与一对电极之间的液体的接触表面，并且利用与液体的接触表面的变化来产生电力，从而防止通道的阻塞或润滑层或电极复杂地图案化 在通道上不需要，从而简化并且制造能够降低生产成本并产生较少故障的能量转换装置。
-
公开(公告)号：KR101358295B1
公开(公告)日：2014-02-05
申请号：KR1020120150552
申请日：2012-12-21
Applicant: 전자부품연구원 , 서울대학교산학협력단
CPC classification number: H02N1/08
Abstract: The present invention relates to an energy converting substrate using liquid and more specifically, to an energy converting substrate suing liquid which converts mechanical energy into electrical energy through the flow of liquid on a substrate with an energy converting layer. Ease of preparation and circulation of the liquid can be achieved by implementing an energy converting device using liquid via one substrate instead of a pair of substrates facing each other, and the energy converting device that does not require a lubrication layer can be developed.
Abstract translation: 本发明涉及一种使用液体的能量转换衬底，更具体地说，涉及一种能量转换衬底，该能量转换衬底通过具有能量转换层的衬底上的液体流将机械能转换成电能。 可以通过实施使用液体的能量转换装置来实现液体的制备和循环，而不是通过一个基板而不是相互面对的一对基板，并且可以开发不需要润滑层的能量转换装置。
-
公开(公告)号：KR1020180101128A
公开(公告)日：2018-09-12
申请号：KR1020170055285
申请日：2017-04-28
Applicant: 전자부품연구원
IPC: F41H3/00 , G02F1/1335
Abstract: 본발명의일실시예는, 투명한재질의상부기판, 상기상부기판의하면에배치되는투명한재질의상부전극층, 상기상부전극층의하면에배치되고, 유체및 서로다른극성으로대전되고, 전하량또는크기가상이한복수의입자를포함하는적어도하나이상의단위셀, 상기단위셀하부에배치되고, 상기상부전극층과전기장을형성하여화소영역을구획하는하부전극층, 상기하부전극층의하면에배치되고, 열적외선을차단하는금속층및 상기금속층의하면에배치되는하부기판을포함하는가시광선및 적외선위장용반사형표시장치및 이를이용하는능동형위장장치를제공한다.
-
公开(公告)号：KR101203477B1
公开(公告)日：2012-11-21
申请号：KR1020100104659
申请日：2010-10-26
Applicant: 전자부품연구원
IPC: G02F1/167 , G02F1/1335
Abstract: 광학특성이 우수하고 이미지 품질이 높은 반사형 컬러디스플레이가 제안된다. 제안된 반사형 컬러디스플레이는 상부기판, 하부기판, 상부전극, 하부전극, 상부기판과 하부기판 사이에 배치되어 대전입자가 충전되어 있는 셀을 구획하는 격벽과 셀 내에 형성되는 380 nm 내지 780 nm에서 투과도가 35% 이상인 적색필터, 녹색필터 및 청색필터 중 적어도 하나를 포함하는 컬러필터를 포함한다.
-
Patent Agency Ranking
公开(公告)号：KR1020100128892A
公开(公告)日：2010-12-08
申请号：KR1020090047557
申请日：2009-05-29
Applicant: 전자부품연구원
IPC: H01L29/786
CPC classification number: H01L29/78696 , H01L29/41733 , H01L29/7869 , H01L51/0558 , H01L51/105
Abstract: PURPOSE: A manufacturing method of thin film transistor and a thin film transistor manufactured by the same are provided to be applied to an OLED(Organic Light Emitting Diode) requiring great amount of current by offering a short channel thin film transistor having a channel width of less than 1μm while using general exposing device. CONSTITUTION: A gate electrode(120), a gate insulating layer(130), and a source electrode(140) are successively formed on a substrate(110). A photoresist layer for forming the channel region on the source electrode is formed. The source electrode is etched on the gate insulating layer in order to form the drain electrode.
Abstract translation: 目的：提供一种薄膜晶体管及其制造的薄膜晶体管的制造方法，其应用于需要大量电流的OLED（有机发光二极管），其通过提供具有沟道宽度的短沟道薄膜晶体管 使用一般曝光装置时小于1μm。 构成：在基板（110）上依次形成栅电极（120），栅极绝缘层（130）和源电极（140）。 形成用于在源电极上形成沟道区的光致抗蚀剂层。 在栅极绝缘层上蚀刻源电极以形成漏电极。
-
公开(公告)号：KR1020080047923A
公开(公告)日：2008-05-30
申请号：KR1020060117953
申请日：2006-11-27
Applicant: 전자부품연구원
IPC: H01L27/146 , H01L31/10
CPC classification number: H01L27/14612 , H01L27/1229 , H01L27/1251 , H01L27/1255 , H01L27/1259 , H01L27/1274
Abstract: An optical detection sensor and a manufacturing method thereof are provided to downsize a switching transistor by forming the switching transistor using polycrystalline silicon. A storage capacitor stores charges generated from an amorphous silicon thin film transistor, and a polycrystalline silicon thin film transistor is switched to shift the charges stored in the storage capacitor. The polycrystalline silicon thin film transistor includes a polycrystalline silicon island(231) with a doped region for an ohmic contact, a first interlayer dielectric(240) enclosing the polycrystalline silicon island, a switching gate electrode(251) formed on the first interlayer dielectric, and a second interlayer dielectric(260) formed on the first interlayer dielectric. The first and second interlayer dielectrics are etched to form a pair of trenches exposing the doped region. A source electrode(331) and a drain electrode(332) are formed in the trenches.
Abstract translation: 提供光学检测传感器及其制造方法，通过使用多晶硅形成开关晶体管来缩小开关晶体管的尺寸。 存储电容器存储从非晶硅薄膜晶体管产生的电荷，并且切换多晶硅薄膜晶体管以移位存储在存储电容器中的电荷。 多晶硅薄膜晶体管包括具有用于欧姆接触的掺杂区域的多晶硅岛（231），封装多晶硅岛的第一层间电介质（240），形成在第一层间电介质上的开关栅电极（251） 和形成在第一层间电介质上的第二层间电介质（260）。 蚀刻第一和第二层间电介质以形成暴露掺杂区域的一对沟槽。 源极电极（331）和漏电极（332）形成在沟槽中。
-
公开(公告)号：KR100822270B1
公开(公告)日：2008-04-16
申请号：KR1020060130796
申请日：2006-12-20
Applicant: 전자부품연구원
IPC: H01L29/786
CPC classification number: H01L29/41733 , H01L29/458 , H01L29/78678
Abstract: A thin film transistor and a manufacturing method thereof are provided to improve an electrical characteristic by reducing contact resistance between a semiconductor layer and a second source electrode. A gate electrode(110) is formed on a substrate(100), and a gate insulating layer(120) is formed on the substrate to enclose the gate electrode. A first source electrode(131) and a first drain electrode(141) are formed on the gate insulating layer. A second source electrode(135) is formed on the first source electrode, and has a first extension(137) floated from the gate insulating layer. A second drain electrode(145) is formed on the first drain electrode, and has a second extension(147) floated from the gate insulating layer. A semiconductor layer(150) is formed on the gate insulating layer in the region where the first and second source electrodes are spaced apart from the first and second drain electrodes.
Abstract translation: 提供一种薄膜晶体管及其制造方法，以通过降低半导体层和第二源电极之间的接触电阻来改善电特性。 在基板（100）上形成栅电极（110），在基板上形成栅极绝缘层（120）以包围栅电极。 第一源电极（131）和第一漏电极（141）形成在栅极绝缘层上。 第二源电极（135）形成在第一源极上，并且具有从栅极绝缘层浮起的第一延伸部（137）。 在第一漏电极上形成第二漏电极（145），并且具有从栅极绝缘层浮起的第二延伸部（147）。 在第一和第二源极与第一和第二漏极间隔开的区域中，在栅极绝缘层上形成半导体层（150）。
-
公开(公告)号：KR1020060075644A
公开(公告)日：2006-07-04
申请号：KR1020040114464
申请日：2004-12-28
Applicant: 전자부품연구원
IPC: H01L29/786
CPC classification number: H01L29/78603 , H01L21/02675 , H01L21/2007 , H01L21/2026 , H01L21/2033 , H01L27/1266
Abstract: 본 발명은 다결정 실리콘 박막 트랜지스터의 제조 방법에 관한 것으로, 스퍼터링으로 비정질 실리콘 박막을 형성하기 때문에, 그 비정질 실리콘 박막에는 수소의 함량이 거의 없어, 탈수소화 공정을 생략하여 고분자 기판의 변형 및 비정질 실리콘 박막에서 크랙의 발생을 방지할 수 있어 소자의 특성이 우수해지는 효과가 있다.
다결정, 실리콘, 수소, 스퍼터링, 변형-
公开(公告)号：KR1020040044755A
公开(公告)日：2004-05-31
申请号：KR1020020072926
申请日：2002-11-22
Applicant: 전자부품연구원
IPC: G02F1/1333
CPC classification number: G02F1/133345 , G02F1/1333 , G02F2202/02 , G02F2202/09
Abstract: PURPOSE: A double structure insulation film mixed organic and inorganic is provided to reduce a surface distortion of a substrate by stacking an organic insulation layer on the substrate. CONSTITUTION: A gas barrier layer(2) is formed on a polymer substrate(1). A gate electrode(3) is formed on the gas barrier layer(2). An organic insulation layer(4) is formed on the gate electrode(3). An inorganic insulation layer(5) is formed on the organic insulation layer(4). A source-drain electrode(6) and a semiconductor layer(7) used as a thin film transistor are formed on the inorganic insulation layer(5). The organic insulation layer(4) is made of anyone material of polycarbonate, polyimide and acryl which have below 2.5GPa of Young's module and superior mechanical and electrical characteristics. The inorganic insulation layer(5) is made of SiO2 having 80-100GPa of Young's module and its thickness is within 200nm.
Abstract translation: 目的：提供混合有机和无机的双重结构绝缘膜，以通过在基板上层叠有机绝缘层来减小基板的表面变形。 构成：在聚合物基材（1）上形成阻气层（2）。 在阻气层（2）上形成栅电极（3）。 在栅电极（3）上形成有机绝缘层（4）。 在有机绝缘层（4）上形成无机绝缘层（5）。 在无机绝缘层（5）上形成用作薄膜晶体管的源 - 漏电极（6）和半导体层（7）。 有机绝缘层（4）由聚碳酸酯，聚酰亚胺和丙烯酸树脂的任何材料制成，其杨氏模量小于2.5GPa，具有优异的机械和电气特性。 无机绝缘层（5）由具有80-100GPa的杨氏模块的SiO 2制成，其厚度在200nm以内。
-
-
-
-
-
-
-
-
-
Search Results
126
records
(took 0.028 seconds)
