公开(公告)号：KR1020110060704A

公开(公告)日：2011-06-08

申请号：KR1020090117374

申请日：2009-11-30

Applicant: 한국과학기술연구원

Inventor： 변영태 ,  김선호 ,  이석 ,  김재헌 ,  김신근 ,  김경헌 ,  김수현

IPC: H01L29/84 ,  B82B3/00 ,  H01L21/28

Abstract: PURPOSE: A field effect transistor sensor array and a manufacturing method thereof are provided to simultaneously measure a plurality of materials by increasing the number of gate electrodes of a field effect transistor according to the kind of materials. CONSTITUTION: An n x n sensor array is arranged on a substrate. A plurality of gate electrodes corresponds to materials. A common source electrode commonly connects n sources comprising each row of the n x n sensor array. A common drain electrode commonly connects n drains comprising each row of the n x n sensor array. A nano wire channel is formed between the common source electrode and the common drain electrode.

Abstract translation: 目的：提供场效应晶体管传感器阵列及其制造方法，以通过根据材料的种类增加场效应晶体管的栅电极的数量来同时测量多种材料。 构成：一个n x n传感器阵列布置在基片上。 多个栅电极对应于材料。 公共源电极通常连接包括n×n个传感器阵列的每一行的n个源。 公共漏电极通常连接包括n×n个传感器阵列的每行的n个漏极。 在公共源电极和公共漏电极之间形成纳米线通道。