公开(公告)号：KR1019960015218B1

公开(公告)日：1996-11-04

申请号：KR1019940002664

申请日：1994-02-15

Applicant: 한국과학기술연구원

Inventor： 박종구 ,  김영도 ,  홍경태 ,  유명기 ,  박승태

IPC: C22C27/04

Abstract: This W-Cu alloy is produced by the processes of (1) infiltration of copper in tungsten frame, repeatedly, (2) rapid heating of infiltrated W-Cu alloy at higher 1150deg.C than melting temperature 1083deg.C of copper for the holding time of over 5min, and (3) rapid cooling up to 800deg.C, for decreasing direct contact between tungsten particles, removing the residual porosity and homogenizing micro structure by contraction and expansion. This alloy comprises 65 to 85wt.% Cu and the balance of tungsten frame. The copper as the starting material is the powder of electrolytic copper of higher oxygen content or the ingot of oxygen-free copper of lower oxygen content.

Abstract translation: 这种W-Cu合金是通过以下工序制造的：（1）在钨框架中铜的渗透反复，（2）浸渍的W-Cu合金在1150℃以上的快速加热比熔化温度为1083℃的铜为夹持 时间超过5min，（3）快速冷却至800℃，减少钨颗粒间的直接接触，消除残留孔隙度，并通过收缩和膨胀均匀化微观结构。 该合金包含65至85重量％的Cu和余量的钨骨架。 作为原料的铜是氧含量较高的电解铜粉末或含氧量较低的无氧铜锭。