公开(公告)号：KR1020130027934A

公开(公告)日：2013-03-18

申请号：KR1020110091468

申请日：2011-09-08

Applicant: 한국과학기술연구원

Inventor： 한승희 ,  전준홍 ,  박원웅 ,  최진영 ,  문선우

IPC: H01L21/265 ,  C23C14/48 ,  H05H1/46

CPC classification number: H01J37/32412 ,  H01J37/3405 ,  H01L21/2236

Abstract: PURPOSE: A plasma ion implantation apparatus and a method thereof are provided to perform an ion implantation process under a low process pressure. CONSTITUTION: A vacuum chamber(1) maintains vacuum condition. A magnetron evaporation source(9) generates pulse plasma in the vacuum chamber. The magnetron evaporation source is placed on a conductivity sample mounting plate(12). An RF-DC combination part(7) couples pulse direct current(6) and RF power(4) together. The RF-DC combination part supplies RF-DC coupling power(8) to the magnetron evaporation source. [Reference numerals] (10) Plasma; (11) Sample; (12) Sample mounting plate; (13) High voltage pulse power source part; (15) Gas control part; (16) Gas supply part; (19) Monitoring part; (2) RF power source part; (21) Vacuum pump; (3) RF matching part; (5) Pulse AC power source part; (7) RF-DC combination part; (9) Magnetron evaporation source

Abstract translation: 目的：提供等离子体离子注入装置及其方法，以在低过程压力下进行离子注入工艺。 构成：真空室（1）保持真空状态。 磁控管蒸发源（9）在真空室中产生脉冲等离子体。 磁控管蒸发源被放置在电导率样品安装板（12）上。 RF-DC组合部分（7）将脉冲直流（6）和RF功率（4）耦合在一起。 RF-DC组合部分向磁控管蒸发源提供RF-DC耦合功率（8）。 （附图标记）（10）等离子体 （11）样品; （12）样品安装板; （13）高压脉冲电源部分; （15）气体控制部分; （16）供气部分; （19）监测部分; （2）射频电源部分; （21）真空泵; （3）射频匹配部分; （5）脉冲交流电源部分; （7）RF-DC组合部分; （9）磁控管蒸发源

公开(公告)号：KR101117261B1

公开(公告)日：2012-02-24

申请号：KR1020100086604

申请日：2010-09-03

Applicant: 한국과학기술연구원

Inventor： 한승희 ,  전준홍 ,  박원웅 ,  최진영

IPC: H01L21/265 ,  H01L31/04 ,  H01L31/18

CPC classification number: Y02E10/50 ,  H01L21/265 ,  H01L31/04 ,  H01L31/18

Abstract: PURPOSE: An apparatus and method for forming a semiconductor material quantum dots in a dielectric thin film are provided to uniformly inject semiconductor materials into the dielectric thin film by using a high voltage pulse and a synchronized pulse magnetron deposition source. CONSTITUTION: Plasma gas is supplied to a vacuum chamber(10). Plasma for depositing a thin film is generated by applying first power to a first deposition source for depositing a dielectric thin film. The dielectric thin film of sputtered materials is deposited from the first deposition source. Plasma ions are generated by applying second power to a second deposition source(26) for generating ions of compound or semiconductor element. The quantum dot of the semiconductor material is made by injecting the plasma ions of the sputtered semiconductor materials from a second deposition source to the dielectric thin film.

Abstract translation: 目的：提供一种用于在电介质薄膜中形成半导体材料量子点的装置和方法，以通过使用高电压脉冲和同步脉冲磁控管沉积源将半导体材料均匀地注入电介质薄膜。 构成：将等离子体气体供应到真空室（10）。 用于沉积薄膜的等离子体通过将第一功率施加到用于沉积介电薄膜的第一沉积源来产生。 溅射材料的电介质薄膜从第一沉积源沉积。 通过向第二沉积源（26）施加第二功率以产生化合物或半导体元件的离子来产生等离子体离子。 半导体材料的量子点通过将溅射的半导体材料的等离子体离子从第二沉积源注入到电介质薄膜中而制成。

公开(公告)号：KR1020110046055A

公开(公告)日：2011-05-04

申请号：KR1020090102872

申请日：2009-10-28

Applicant: 한국과학기술연구원

Inventor： 한승희 ,  변지영 ,  석현광 ,  한준현 ,  김유찬 ,  박원웅 ,  전준홍 ,  최진영

IPC: C23C14/48 ,  C23C14/35

Abstract: PURPOSE: A device and method for silver element plasma ion injection capable of the improvement of anti-microbial property are provided to generate high density silver plasma by applying very high electricity at the moment when the pulse is applied. CONSTITUTION: A device for silver element plasma ion injection comprises a vacuum chamber(110), a magnetron deposition(120), a sample mount(130), a first power source feeding member and a second power source feeding member. The vacuum chamber keeps the inside under vacuum condition. The magnetron deposition performs thin film deposition. The sample mount is installed in the location facing the deposition within the vacuum chamber and mount a simple. The first power source feeding member applies the pulse direct current electricity in the deposition. The second power source feeding member accelerates the plasma ions of the elemental silver towards sample.

Abstract translation: 目的：提供能够提高抗菌性能的银元素等离子体离子注入装置和方法，以在施加脉冲时施加非常高的电力来产生高密度银等离子体。 构成：用于银元素等离子体离子注入的装置包括真空室（110），磁控管沉积（120），样品安装座（130），第一电源馈送构件和第二电源馈送构件。 真空室保持真空状态。 磁控管沉积执行薄膜沉积。 样品架安装在真空室内沉积物的位置，并安装简单。 第一电源馈送部件在沉积中施加脉冲直流电。 第二电源馈送部件将元素银的等离子体离子加速到样品。

公开(公告)号：KR1020120084844A

公开(公告)日：2012-07-31

申请号：KR1020110006123

申请日：2011-01-21

Applicant: 한국과학기술연구원

Inventor： 한승희 ,  박원웅 ,  최진영 ,  전준홍

IPC: A61L27/30 ,  A61L27/04 ,  A61F2/30 ,  C23C14/48

CPC classification number: A61L27/30 ,  A61F2/30 ,  A61F2002/30003 ,  A61F2002/3006 ,  A61L27/04 ,  A61L27/306 ,  C23C14/48

Abstract: PURPOSE: A method for preparing artificial joint materials and an apparatus thereof are provided to reduce the abrasion of artificial joint materials. CONSTITUTION: A method for preparing artificial joint materials is as follows. A ceramic thin film is deposited on a metal material used as a material for the artificial joint. The abrasion quantity of a polymer material for the artificial joint is reduced by injecting the ions of active gas to the surface of a metal material.

Abstract translation: 目的：提供一种制备人造关节材料的方法及其装置，以减少人造关节材料的磨损。 构成：人造关节材料的制备方法如下。 将陶瓷薄膜沉积在用作人造关节材料的金属材料上。 通过将活性气体的离子注入到金属材料的表面，人造接头的聚合物材料的磨损量减少。