公开(公告)号：KR100851892B1

公开(公告)日：2008-08-13

申请号：KR1020070056900

申请日：2007-06-11

Applicant: 한국과학기술연구원

Inventor： 문명운 ,  한준현 ,  이광렬 ,  한승희

IPC: H01J37/30 ,  H01J37/317 ,  H01L21/265

Abstract: A method for controlling morphology of a surface of a polymer using an ion beam and a polymer with a ripple pattern on a surface fabricated thereby, and applications thereof are provided to form a nano-size pattern of a particular shape in a desired region by changing an irradiation time and an incident angle. A focused ion beam(4) is irradiated obliquely in an incident angle(2) of a constant angle on an irradiation region(5) of an upper surface of a polymer substrate(3) in order to form a ripple pattern. A hierarchical structure having two or more different periods is formed in the ripple pattern by adjusting a beam irradiation time. The ripple pattern is oriented in a particular direction. The width and height of the ripple pattern are controlled by adjusting at least one of the incident angle and an irradiation time of the ion beam and intensity of an acceleration voltage.

Abstract translation: 使用离子束和由其制造的表面上的波纹图案的聚合物控制聚合物的形态的方法及其应用被提供以通过改变在所需区域中形成特定形状的纳米尺寸图案 照射时间和入射角度。 在聚合物基板（3）的上表面的照射区域（5）上以一定角度的入射角（2）倾斜地照射聚焦离子束（4），以形成波纹图案。 通过调整光束照射时间，在波纹图案中形成具有两个或更多个不同周期的分层结构。 波纹图案朝向特定的方向。 通过调节入射角和离子束的照射时间和加速电压的强度中的至少一个来控​​制波纹图案的宽度和高度。

公开(公告)号：KR1020070073580A

公开(公告)日：2007-07-10

申请号：KR1020060110157

申请日：2006-11-08

Applicant: 한국과학기술연구원

Inventor： 지광구 ,  김윤배 ,  한준현 ,  한승희

IPC: B23D61/02 ,  B23P5/00

CPC classification number: B23D61/026 ,  Y10T83/9319 ,  Y10T83/9374 ,  Y10T83/9403 ,  Y10T83/9454

Abstract: A structure of a low noise saw and a low noise diamond saw are provided to achieve improved durability of the saw by eliminating the necessity of forming holes in a metal plate. A structure of a low noise saw includes a shank(12) made with a metal plate, and a damper(20) having a part which is spot-welded to one or both of the upper and lower surfaces of the shank. The shank has an outer circumferential surface with teeth of saw. One or both of the upper and lower surface of the shank have grooves(50,50') with thicknesses for accommodating the damper.

Abstract translation: 提供低噪声锯和低噪声金刚石锯的结构，以通过消除在金属板中形成孔的必要性来提高锯的耐久性。 低噪声锯的结构包括由金属板制成的柄（12）和具有点焊在柄的上表面和下表面中的一个或两个的部分的阻尼器（20）。 柄具有带锯齿的外圆周表面。 柄的上表面和下表面中的一个或两个具有用于容纳阻尼器的厚度的凹槽（50,50'）。

公开(公告)号：KR100674532B1

公开(公告)日：2007-01-29

申请号：KR1020050016366

申请日：2005-02-28

Applicant: 한국과학기술연구원

Inventor： 이연희 ,  한승희

IPC: H01L21/203

CPC classification number: C23C14/205 ,  C23C14/345 ,  H05K1/0393 ,  H05K3/16

Abstract: 본 발명은 플라즈마 이온 주입에 의한 고분자 표면 위에 금속 박막을 증착하는 방법 및 이를 위한 장치에 관한 것이다. 구체적으로, 본 발명은 플라즈마를 발생시킨 후 금속 타겟에 음의 전압을 인가하여 스퍼터링시키고, 고분자 시료에 고전압 펄스를 인가하여 이온을 주입하는 방식으로 금속을 증착하는 것을 특징으로 하는 방법 및 장치를 제공한다.
본 발명에 따라 고분자 기판에 음의 펄스 전압을 가하여 플라즈마 이온 주입법과 금속 증착 방법을 융합하여 금속 박막을 증착하므로써 완만한 계면층을 형성하여 접착력을 향상시키는데 매우 효과적이다.
고분자, 접착력, 금속 박막, 형성 방법, 플라즈마, 고전압 펄스, 이온 주입

公开(公告)号：KR100599358B1

公开(公告)日：2006-07-12

申请号：KR1020040050017

申请日：2004-06-30

Applicant: 한국과학기술연구원

Inventor： 이연희 ,  한승희 ,  김영수

IPC: C23C16/513

Abstract: 본 발명은 플라즈마 이온 주입 및 열처리에 의하여 금속으로 이루어진 입체구조 재료의 표면을 처리하여 표면의 소수성을 향상시키는 방법 및 장치에 관한 것이다. 본 발명에 따른 방법은 진공조 내에 위치한 전도성 시료대 위에 금속 시료를 위치시키는 단계, 진공조 내에 플라즈마원 기체를 도입하는 단계, 도입된 플라즈마원 기체로부터 플라즈마를 발생시키는 단계, 음의 고전압 펄스를 상기 금속 재료에 가하여, 플라즈마로부터 추출된 이온이 고에너지를 보유한 채 상기 시료의 표면에 주입되도록 하는 단계, 및 이온 주입 후 시료의 온도를 상승시켜 열처리하는 단계를 포함한다.
플라즈마 이온 주입, 열처리, 금속, 소수성, 입체 구조

公开(公告)号：KR1020050027667A

公开(公告)日：2005-03-21

申请号：KR1020030064026

申请日：2003-09-16

Applicant: 한국과학기술연구원

Inventor： 한승희 ,  이연희

IPC: H03K3/543

CPC classification number: H03K3/543 ,  H03K3/57

Abstract: A high-power pulsed RF amplifier is provided to generate an RF output of high power as an RF output of low power by using an electrontube-semiconductor cascode circuit. A semiconductor switch(2) is connected to a cathode of an electrontube to constitute a cascode circuit. A power input member(13) applies a high voltage to an anode of the electrontube. A DC source input member(12) applies a DC power to plural auxiliary electrodes of the electrontube. A pulsed RF input member applies a pulsed RF driving power to the semiconductor switch. A pulsed RF output member(14) generates the pulsed RF output in the electrontube. An impedance matching member(15) controls impedance matching of the pulsed RF output.

Abstract translation: 提供了一种高功率脉冲RF放大器，通过使用电流 - 半导体共源共栅电路来产生高功率的RF输出作为低功率的RF输出。 半导体开关（2）连接到电子管的阴极以构成共源共栅电路。 电力输入构件（13）向电子管的阳极施加高电压。 直流电源输入部件（12）向电子管的多个辅助电极施加直流电力。 脉冲RF输入部件向半导体开关施加脉冲RF驱动功率。 脉冲RF输出构件（14）在电路中产生脉冲RF输出。 阻抗匹配构件（15）控制脉冲RF输出的阻抗匹配。

公开(公告)号：KR100416715B1

公开(公告)日：2004-01-31

申请号：KR1020010009862

申请日：2001-02-27

Applicant: 한국과학기술연구원

Inventor： 한승희 ,  이연희

IPC: H01L21/265

Abstract: PURPOSE: An ion implantation method using pulse plasma is provided to effectively improve abrasion resistance and intensity of the surface of a sample, by applying a radio frequency(RF) pulse and a negative direct current(DC) high voltage to a plasma generating gas and by uniformly implanting ions into the surface of the sample. CONSTITUTION: The sample is positioned on a sample table(14) inside a vacuum bath(10). Gas to be transformed into plasma is supplied to the vacuum bath. An RF pulse is radiated to the gas. The negative DC high voltage is applied to the sample to implant plasma ions of a plasma state into the surface of the sample.

Abstract translation: 目的：通过向等离子体产生气体施加射频（RF）脉冲和负直流（DC）高电压，提供使用脉冲等离子体的离子注入方法以有效地提高样品表面的耐磨性和强度，以及 通过将离子均匀地注入样品表面。 组成：样品放置在真空槽（10）内的样品台（14）上。 被转化成等离子体的气体被提供给真空槽。 射频脉冲辐射到气体。 将负DC直流高电压施加到样本以将等离子体状态的等离子体离子注入到样本的表面中。

公开(公告)号：KR100406459B1

公开(公告)日：2003-11-19

申请号：KR1020010039808

申请日：2001-07-04

Applicant: 한국과학기술연구원 ,  율촌화학 주식회사

Inventor： 한승희 ,  이연희 ,  하규진 ,  정인배 ,  김장섭

IPC: C01B13/10

CPC classification number: C01B13/11 ,  C01B2201/90

Abstract: An ozone production rate control method and a device using dual frequency in an apparatus employing a silent discharge technique are provided. The method includes the steps of: generating a control signal for controlling the ozone production rate; creating, responsive to the control signal, an adjusted signal having an ON/OFF time ratio adjusted depending on the control signal; producing, responsive to the adjusted signal, a low-frequency pulse and a high-frequency signal; and controlling an ON/OFF time ratio of the high-frequency signal. The device includes an ON/OFF time ratio adjusting unit, a low-frequency pulse oscillation circuit, a high-frequency oscillation circuit, and a multiplier.

Abstract translation: 提供了一种在采用无声放电技术的设备中使用双频的臭氧生成速率控制方法和装置。 该方法包括以下步骤：产生用于控制臭氧产生速率的控制信号; 响应于控制信号，产生具有取决于控制信号而调节的开/关时间比的调节信号; 响应于调节后的信号产生低频脉冲和高频信号; 并控制高频信号的开/关时间比。 该装置包括开/关时间比调节单元，低频脉冲振荡电路，高频振荡电路和乘法器。

公开(公告)号：KR1020030003951A

公开(公告)日：2003-01-14

申请号：KR1020010039821

申请日：2001-07-04

Applicant: 한국과학기술연구원 ,  율촌화학 주식회사

Inventor： 한승희 ,  이연희 ,  하규진 ,  정인배 ,  김장섭

IPC: C01B13/11

CPC classification number: C01B13/115 ,  C01B3/382 ,  C01B2201/12 ,  C01B2201/90

Abstract: PURPOSE: An apparatus for generating high concentration ozone is provided to generate high concentration ozone at a high efficiency and linearly control concentration of ozone generated. CONSTITUTION: In an ozone generating apparatus capable of linearly controlling concentration of ozone generated, the apparatus for generating high concentration ozone comprises a means for providing with oxygen(218); a means for generating ozone by impressing electric discharge to the gas flown in from the gas providing means; a means that is used in the electric discharge and provides with first pulse signal in which an on-off time ratio is controlled; and a conversion means which is electrically connected to an ozone generating means(104) and the pulse providing means and provides the ozone generating means with the signal level converted from the first pulse by converting the first pulse from the pulse signal providing means into a preset signal level, wherein the apparatus further comprises a control signal generating means(114) which is electrically connected to the pulse signal providing means and generates control signals for controlling the on-off time ratio of the first pulse signal, and the ozone generating means(104) comprises one or more upper and lower electrodes(204,210) which are oppositely directed to each other and generate voltage discharge; insulating materials(202,208) which are flatly formed on one side surface of each of the upper and lower electrodes; and cooling means(206,212) which are formed adjacently to one side surface of each of the upper and lower electrodes(204,210), wherein the upper electrodes are electrically connected to the conversion means so that the first pulse signal is impressed to the upper electrodes, and the lower electrodes are grounded.

Abstract translation: 目的：提供一种产生高浓度臭氧的设备，以高效率产生高浓度臭氧，并线性控制产生的臭氧浓度。 构成：在能够线性控制产生的臭氧浓度的臭氧发生装置中，用于产生高浓度臭氧的装置包括提供氧气的装置（218）; 用于通过向从气体提供装置流入的气体施加放电来产生臭氧的装置; 在放电中使用的装置，并提供控制开关时间比率的第一脉冲信号; 以及电连接到臭氧发生装置（104）和脉冲提供装置的转换装置，并且通过将来自脉冲信号提供装置的第一脉冲转换成预设的第一脉冲，为臭氧发生装置提供从第一脉冲转换的信号电平 信号电平，其中，所述装置还包括电连接到所述脉冲信号提供装置的控制信号发生装置（114），并且产生用于控制所述第一脉冲信号的开关时间比的控制信号，以及所述臭氧发生装置 104）包括彼此相对地指向并产生电压放电的一个或多个上电极和下电极（204,210）; 绝缘材料（202,208），其平坦地形成在上部和下部电极中的每一个的一个侧表面上; 以及与所述上下电极（204,210）中的每一个的一个侧表面相邻形成的冷却装置（206,212），其中所述上电极与所述转换装置电连接，使得所述第一脉冲信号施加到所述上电极， 并且下电极接地。

公开(公告)号：KR1020030003938A

公开(公告)日：2003-01-14

申请号：KR1020010039808

申请日：2001-07-04

Applicant: 한국과학기술연구원 ,  율촌화학 주식회사

Inventor： 한승희 ,  이연희 ,  하규진 ,  정인배 ,  김장섭

IPC: C01B13/10

CPC classification number: C01B13/11 ,  C01B2201/90

Abstract: PURPOSE: A method and apparatus for controlling the amount of ozone production using dual frequencies especially in ozone generator adopting silent discharge are provided, which control ON/OFF time ratio of high frequency and high voltage pulse according to ON/OFF time ratio of other frequency which is relatively lower than frequency of high frequency and high voltage pulse, thus can obtain ozone generation rate changeable lineally according to control input signal. CONSTITUTION: The method for controlling the amount of ozone production using dual frequencies includes the steps of generating a first signal of direct voltage of 5V to 10 V for controlling ozone generation rate; generating a second signal having ON/OFF time ratio in response to the first signal; generating a third signal of pulse signal having frequency of 1 Hz to 5 kHz having ON/OFF time ratio in response to the second signal; generating a fourth signal of pulse signal having 1 kHz to 50 kHz; and controlling the ON/OFF time ratio of the fourth signal to change according to the ON/OFF signal of the third signal.

Abstract translation: 目的：提供一种使用双频进行臭氧发生量控制的方法和装置，特别是采用静音放电的臭氧发生器，根据其他频率的ON / OFF时间比，控制高频和高压脉冲的ON / OFF时间比 其频率相对低于高频和高压脉冲的频率，从而可以根据控制输入信号线性地改变臭氧发生率。 构成：使用双频控制臭氧产生量的方法包括以下步骤：产生5V至10V的直流电压的第一信号以控制臭氧产生速率; 响应于第一信号产生具有ON / OFF时间比的第二信号; 产生响应于第二信号的具有ON / OFF时间比的频率为1Hz至5kHz的脉冲信号的第三信号; 产生1kHz至50kHz的脉冲信号的第四信号; 以及根据第三信号的ON / OFF信号控制第四信号的ON / OFF时间比改变。

公开(公告)号：KR1019970073239A

公开(公告)日：1997-11-07

申请号：KR1019960010740

申请日：1996-04-10

Applicant: 한국과학기술연구원

Inventor： 한승희 ,  이연희

IPC: H05H1/00

Abstract: 본 발명은 진공조 내에 위치한 시료대 위에 판상의 고분자 시료를 위치시키고, 진공조 내에 가스를 도입하여 가스로부터 이온 플라즈마를 발생시키고, 부(-)의 고전압 펄스를 시료에 가하여, 플라즈마로부터 추출된 이온이 고에너지를 보유한 채 고분자 시료의 표면에 주입되도록 하는 것이 특징인 소분자 소재의 표면 개질 방법 및 그를 위한 장치에 관한 것이다. 본 발명의 방법을 따르면, 입사되는 이온의 에너지가 종래의 플라즈마를 이용한 고분자 표면 개질 방법에서의 이온 에너지보다 매우 높으므로 표면 개질 효율이 탁월하고 표면 이하 깊은 층까지 개질시킬 수 있어 처리 후 시간에 따른 표면 특성 저하를 효과적으로 방지할 수 있게 된다. 또한, 본 발명의 고분자 표면 개질 방법은 대면적이 시료를 단시간내에 용이하게 균일 처리할 수 있으며, 고전압 펄스를 조절하여 이온 에너지를 쉽게 변화시킬 수 있을 뿐 아니라 장치의 구조 또한 매우 단순화시키므로 대량 생산 장치에 유리하다.