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公开(公告)号：KR101454610B1
公开(公告)日：2014-10-28
申请号：KR1020120141851
申请日：2012-12-07
Applicant: 한국세라믹기술원
IPC: H01L31/042 , H01L31/0749 , H01L31/18
CPC classification number: Y02E10/50 , Y02P70/521
Abstract: 본 발명은 기계화학적 방법에 의해 Cu(In,Ga)Se
2 조성 분말을 제조하는 것으로, Ga의 최대몰비가 최대 0.2를 초과하지 않도록 하여 Cu(In,Ga)Se
2 분말을 밀링 및 합성한 후, 이 분말에 CuGaSe
2 조성의 소스분말을 추가하여 함께 더 밀링하고 이를 1회 이상 수행함으로써 Cu(In,Ga)Se
2 조성에서의 Ga 고용 몰비를 효과적으로 증가시킬 수가 있어 최대 광변환 효율을 갖는 Cu(In,Ga)Se
2 조성 분말의 제조가 가능하다.-
公开(公告)号：KR1020140112156A
公开(公告)日：2014-09-23
申请号：KR1020130026458
申请日：2013-03-13
Applicant: 한국세라믹기술원
Abstract: The present invention relates to a method for manufacturing powder composed of Cu(In,Ga)Se-_2 by a mechanical and chemical method. The composition ratio of source powder of Cu, In and Ga satisfies 0.7
Abstract translation: 本发明涉及通过机械和化学方法制造由Cu（In，Ga）Se-2组成的粉末的方法。 Cu，In和Ga的源粉末的组成比满足0.7 <= Cu /（In + Ga）<= 1.0且0
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公开(公告)号：KR101160487B1
公开(公告)日：2012-07-03
申请号：KR1020100115342
申请日：2010-11-19
Applicant: 한국세라믹기술원
IPC: H01L31/0445 , H01L31/0224
CPC classification number: Y02E10/50
Abstract: 본 발명에서는 기판과 이의 상부에 차례로 적층된 하부전극 및 Cu(In
1
-x Ga
x )Se
2 (이하, "CIGS") 조성의 광전변환층을 포함하는 CIGS 태양전지에 있어서, 상기 하부전극은 Ni, Au, Pt 및 Pd 중에서 선택된 하나 이상의 조성을 갖는 단일층으로 되거나, 또는 상기 하부전극은 복수층으로 되고 상기 복수층 각층은 상호 상이하게 되도록 Ni, Mo, Au, Pt 및 Pd 중에서 하나 이상 선택된 조성을 갖는 CIGS 태양전지가 개시된다.-
公开(公告)号：KR1020120054137A
公开(公告)日：2012-05-30
申请号：KR1020100115361
申请日：2010-11-19
Applicant: 한국세라믹기술원
IPC: C01G23/00 , C04B35/468 , B82B3/00
Abstract: PURPOSE: A manufacturing method of barium titanate nano-powder is provided to manufacture nano-sized BaTiO2 by using a molten-salt process. CONSTITUTION: A manufacturing method of barium titanate nano-powder comprises next steps: mixing TiO2 material powder with more than one of material powder between BaCO3 and BaO in order to manufacture a first mixed compound(s401); mixing the first compound powder with more than one of salts which are selected from KCl, NaCl, LiCl, KF, LiCl-KCl, NaCl-KCl and KF-KCl in order to manufacture a second compound powder(s402); and synthesizing barium titanate nano-powder by heat treating the second compound powder(s403). The heat treating temperature is less than a melting temperature.
Abstract translation: 目的：提供钛酸钡纳米粉末的制造方法，通过使用熔盐法制造纳米尺寸的BaTiO 2。 构成：钛酸钡纳米粉末的制造方法包括以下步骤：将TiO 2材料粉末与BaCO 3和BaO之间的多种材料粉末混合以制备第一混合化合物（s401）; 将第一化合物粉末与选自KCl，NaCl，LiCl，KF，LiCl-KCl，NaCl-KCl和KF-KCl的多种盐混合以制备第二种化合物粉末（s402）; 并通过热处理第二化合物粉末合成钛酸钡纳米粉末（s403）。 热处理温度小于熔化温度。
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公开(公告)号：KR1020120054127A
公开(公告)日：2012-05-30
申请号：KR1020100115342
申请日：2010-11-19
Applicant: 한국세라믹기술원
IPC: H01L31/0445 , H01L31/0224
CPC classification number: Y02E10/50 , H01L31/0445 , H01L31/0224
Abstract: PURPOSE: A thick film CIGS solar battery and a manufacturing method thereof are provided to improve the property of a bottom electrode by having the bottom electrode of a single layer structure or a multi-layer structure. CONSTITUTION: A CIGS solar battery comprises a substrate(12), a bottom electrode(14) which is laminated on the upper side of the substrate, and a photoelectric transformation layer(16) of CIGS composition. The bottom electrode is composed of a single layer having one or more compositions selected among Ni, Au, Pt, and Pd. The bottom electrode is composed of a first bottom electrode layer and a second bottom electrode layer. The first bottom electrode layer is close to the bottom surface of the second bottom electrode layer. The second bottom electrode layer is close to the bottom surface of the photoelectric transformation layer.
Abstract translation: 目的：提供厚膜CIGS太阳能电池及其制造方法，以通过具有单层结构的底电极或多层结构来改善底电极的性能。 构成：CIGS太阳能电池包括层叠在基板的上侧的基板（12），底部电极（14）和CIGS组合物的光电转换层（16）。 底电极由具有选自Ni，Au，Pt和Pd中的一种或多种组成的单层组成。 底部电极由第一底部电极层和第二底部电极层构成。 第一底部电极层靠近第二底部电极层的底表面。 第二底电极层靠近光电转换层的底表面。
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Patent Agency Ranking
公开(公告)号：KR1020150066106A
公开(公告)日：2015-06-16
申请号：KR1020130151232
申请日：2013-12-06
Applicant: 한국세라믹기술원
CPC classification number: H01L51/102 , H01B1/08 , H01B1/16 , H01B1/22
Abstract: 본발명은주 조성을 Bi-Zn-B-Si-O로하고이에첨가제로서 NaO, AlO및 PbO 중의하나이상을포함하되, CaO는함유하지않는글라스프릿조성물을개시한다. 또한, 본발명은이에부가하여 BaO, ZrO, KO및 LiCl 중의하나이상이첨가된글라스프릿조성물을개시한다. 이들글라스프릿조성물은낮은계면저항값을갖고특히태양전지에있어서반사방지막이코팅된 Si 기판상에전면전극으로서형성될때 상기반사방지막에대한우수한식각특성을보이고 Si 기판과의우수한오믹컨택을형성함으로써우수한계면저항특성을나타낸다.
Abstract translation: 公开了作为主要成分的Bi-Zn-B-Si-O和作为添加剂的Na 2 O，Al 2 O 3和PbO中的至少一种，不包括CaO的玻璃料组合物。 此外，公开了一种玻璃料组合物，其中加入至少一种来自Ba2O3，ZrO，K2O2和LiCl的组合物。 玻璃料组合物：具有低界面电阻值; 特别是当在太阳能电池中涂覆有防反射膜的Si衬底上形成正电极时，特别是防反射膜的蚀刻性能优异; 与Si衬底进行极好的接触; 因此具有优异的界面电阻。
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公开(公告)号：KR101519829B1
公开(公告)日：2015-05-13
申请号：KR1020130026458
申请日：2013-03-13
Applicant: 한국세라믹기술원
Abstract: 본 발명은 기계화학적 방법에 의해 Cu(In,Ga)Se
2 조성 분말을 제조하는 것으로, Cu, In, Ga 및 Se의 각 소스 분말을 조성식 Cu(In,Ga)Se
2 (이때, Cu, In 및 Ga의 몰비는 0.7≤Cu/(In＋Ga)≤1.0 및 0＜Ga/(In＋Ga)≤0.3을 만족한다)를 각각 만족하는 양으로 함께 기계화학적 방법으로 밀링함으로써 Cu(In,Ga)Se
2 분말을 합성한다.-
公开(公告)号：KR101269848B1
公开(公告)日：2013-06-07
申请号：KR1020100082526
申请日：2010-08-25
Applicant: 한국세라믹기술원
Abstract: 본 발명에 따른 CIGS 분말의 제조방법에 의하면, CIGS
합성공정에 있어서 소위 결정핵의 기능을 하는 시드(seed)를 먼저 형성하고 이를 이용하여 그 주위에 단일상이 결집되도록 하는 메카니즘으로써 단일상의 CIGS 결정구조를 제조한다. 이로써, 비진공방식으로서 균일하고 대면적의 CIGS 광흡수층을 제조가능한 단일상의 CIGS 나노분말의 제조가 가능하다.-
公开(公告)号：KR1020130036446A
公开(公告)日：2013-04-12
申请号：KR1020110100528
申请日：2011-10-04
Applicant: 한국세라믹기술원
CPC classification number: H05K3/46 , H05K3/1283 , H05K3/26
Abstract: PURPOSE: A manufacturing method of a low temperature co-fired ceramics(LTCC) substrate is provided to provide substrates with excellent flatness and flexibility by attaching a support layer with high sintering temperature to the LTCC substrate. CONSTITUTION: A manufacturing method of an LTCC substrate comprises a step of manufacturing a plurality of LTCC substrate with a sintering temperature of 900>= or less; a step of manufacturing one or more support layer sheets with a sintering temperature of 1150>= or more; a step of forming an electrocircuit pattern on each side of the LTCC sheets; a step of forming a sub-assembly by laminating the LTCC sheets; a step of forming an assembly by attaching one or more support layer sheets on the upper side of lower side of the sub assembly; a step of sintering the assembly at 900>= or less; and a step of removing the support layer sheet from the sintered assembly. [Reference numerals] (s201) Manufacturing each LTCC sheet; (s202) Printing a circuit pattern on each LTCC sheet side; (s203) Forming vias and electrodes on each LTCC sheet side; (s204) Laminating each LTCC sheet; (s205) Laminating the support layer sheets; (s206) Simultaneously sintering; (s207) Removing supporting layer sheets; (s208) Polishing the surface of an LTCC substrate; (s211) Manufacturing supporting layer sheets;
Abstract translation: 目的：提供低温共烧陶瓷（LTCC）基板的制造方法，通过将具有高烧结温度的支撑层附着在LTCC基板上，为基板提供优异的平坦度和柔性。 构成：LTCC基板的制造方法包括制造烧结温度为900℃以下的多个LTCC基板的工序; 制造烧结温度为1150℃以上的一个以上的支撑层片材的工序; 在LTCC片的每一侧形成电路图案的步骤; 通过层叠LTCC片形成子组件的步骤; 通过在副组件的下侧的上侧上安装一个或多个支撑层片来形成组件的步骤; 在900℃以下烧结组件的步骤= 以及从烧结组件移除支撑层片的步骤。 （附图标记）（s201）制造每个LTCC片; （s202）在每个LTCC板侧印刷电路图案; （s203）在每个LTCC片材侧形成通孔和电极; （s204）层压每个LTCC板; （s205）层压支撑层片材; （s206）同时烧结; （s207）拆卸支撑层片材; （s208）抛光LTCC基板的表面; （s211）制造支撑层片;
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公开(公告)号：KR1020120019235A
公开(公告)日：2012-03-06
申请号：KR1020100082526
申请日：2010-08-25
Applicant: 한국세라믹기술원
Abstract: PURPOSE: A manufacturing method of single-phase Cu(In,Ga)Se2(CIGS) nano-powder is provided to form a single-phase CIGS crystal structure using a seed, thereby enabling to manufacture a uniform and large scaled light absorption layer. CONSTITUTION: A manufacturing method of single-phase Cu(In,Ga)Se2(CIGS) nano-powder comprises the following steps: a step of mixing more than one of Cu, In, Ga and Se source powders with a solvent and heat-treating thereof in order to synthesize seeds which will be sources for more than one of CuGaSe2, CuInSe2, and Cu(In,Ga)Se2; and a step of mixing and heat-treating the seed with the Cu, In, Ga, and Se source powders and the solvent in order to synthesize the CIGS. In a CIGS synthesis step, the seed is either solution or powder. If the seed is solution, the molar ratio of the CIGS source powder to the solvent is from 1:100 to 1:1. If the seed is powder, the molar ratio of the seed powder to the CIGS source powder is from 1:100 to 1:1. In the CIGS synthesis step, heat-treating lasts for 0.5-48 hours at 200-250 deg. Celsius, whereas heat-treating lasts for 0.5-48 hours at 150-200 deg.Celsius in the seed synthesis step.
Abstract translation: 目的：提供单相Cu（In，Ga）Se2（CIGS）纳米粉末的制造方法，以使用种子形成单相CIGS晶体结构，从而能够制造均匀且大型的光吸收层。 构成：单相Cu（In，Ga）Se2（CIGS）纳米粉末的制造方法包括以下步骤：将一种以上Cu，In，Ga和Se源粉末与溶剂和热 - 以合成将成为CuGaSe 2，CuInSe 2和Cu（In，Ga）Se 2中多于一种的晶种的种子; 以及用Cu，In，Ga和Se源粉末和溶剂混合和热处理种子以合成CIGS的步骤。 在CIGS合成步骤中，种子是溶液或粉末。 如果种子是溶液，则CIGS源粉末与溶剂的摩尔比为1:100至1:1。 如果种子是粉末，则种子粉末与CIGS源粉末的摩尔比为1:100至1:1。 在CIGS合成步骤中，热处理在200-250度持续0.5-48小时。 而在种子合成步骤中，热处理在150-200摄氏度下持续0.5-48小时。
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